EE-125
Abstract: photo transistor high current photo transistor KDT5001A PHOTO TRANSISTOR current to voltage photo-transistor PK640 "photo transistor"
Text: Silicon photo transistor KDT5001A The KDT5001A is high sensitivity silicon photo [Unit : mm] Dimensions transistor which converts light to electrical signal. This photo transistor is both COB package and easy to mount. Features Higly sensitive photo transistor
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KDT5001A
KDT5001A
EE-125
photo transistor high current
photo transistor
PHOTO TRANSISTOR current to voltage
photo-transistor
PK640
"photo transistor"
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DTC114TE
Abstract: SMD310 motorola DTC114TE
Text: MOTOROLA Order this document by DTC114TE/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a
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DTC114TE/D
DTC114TE
416/SC
DTC114TE/D*
DTC114TE
SMD310
motorola DTC114TE
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transistor sc 308
Abstract: DTC114TE SMD310
Text: DTC114TE Product Preview Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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DTC114TE
DTC114TE
416/SC
r14525
DTC114TE/D
transistor sc 308
SMD310
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color sensitive PHOTO TRANSISTOR
Abstract: Rise time of photo transistor KDT3002A npn photo transistor 3mm photo transistor
Text: Silicon photo transistor KDT3002A The KDT3002A is high sensitivity NPN silicon photo [Unit : mm] Dimensions transistor mounted in Φ3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor
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KDT3002A
KDT3002A
color sensitive PHOTO TRANSISTOR
Rise time of photo transistor
npn photo transistor
3mm photo transistor
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DTA114YE
Abstract: SMD310
Text: MOTOROLA Order this document by DTA114YE/D SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic
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DTA114YE/D
DTA114YE
416/SC
DTA114YE/D*
DTA114YE
SMD310
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2SB1453
Abstract: NEC 2SB1453
Text: DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING UNIT: mm the IC output. This transistor is ideal for motor drivers and solenoid
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2SB1453
2SB1453
NEC 2SB1453
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transistor sc 308
Abstract: DTA114YE SMD310
Text: ON Semiconductort DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 1 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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DTA114YE
DTA114YE
416/SC
r14525
DTA114YE/D
transistor sc 308
SMD310
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transistor 1000V 6A
Abstract: diode 6A 1000v E76102 SQD300AA100 transistor VCE 1000V Ultrasonic moter application transistor 1000V high current darlington transistor SQD300AA120 M6 transistor
Text: TRANSISTOR MODULE SQD300AA100 UL;E76102 M SQD300AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for
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SQD300AA100
E76102
SQD300AA100
SQD300AA120
transistor 1000V 6A
diode 6A 1000v
transistor VCE 1000V
Ultrasonic moter application
transistor 1000V
high current darlington transistor
SQD300AA120
M6 transistor
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2SD560
Abstract: nec 2sd560 2sd560 equivalent NEC RELAY
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for low- ORDERING INFORMATION frequency power amplifiers and low-speed switching. This transistor is
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2SD560
2SD560
O-220AB
O-220AB)
nec 2sd560
2sd560 equivalent
NEC RELAY
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2SA1647
Abstract: 2SA1647-Z d1483
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1647, 2SA1647-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1647 is a mold power transistor developed for high- PACKAGE DRAWING Unit: mm 6.5 ±0.2 5.0 ±0.2 This transistor is ideal for use in switching regulators, DC/DC
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2SA1647,
2SA1647-Z
2SA1647
2SA1647-Z
d1483
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2SD2161
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2161 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and
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2SD2161
2SD2161
O-220
O-220)
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IC A 3120
Abstract: Transistor AC 51 bx transistor a 3120 ic VCEX1000V SQD400AA100 derating factor
Text: TRANSISTOR MODULE SQD400AA100 UL;E76102 （M） SQD400AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for
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SQD400AA100
E76102
SQD400AA100
113max.
100msec10sec
1msec100msec
VCC600V
IC A 3120
Transistor AC 51
bx transistor
a 3120 ic
VCEX1000V
derating factor
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QCA300BA60
Abstract: 675g M6 transistor
Text: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is
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QCA300BA60
E76102
QCA300BA60
trr200ns)
113max
IC300A,
VCEX600V
hFE750
Ic300A
675g
M6 transistor
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2SC4811
Abstract: No abstract text available
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4811 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SC4811 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment.
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2SC4811
2SC4811
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D1558
Abstract: 2SA1840
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1840 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SA1840 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment.
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2SA1840
2SA1840
D1558
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2SC4814
Abstract: 2Sc4814 equivalent
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4814 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4814 is a power transistor featuring low-saturation voltage and high hFE. This transistor is ideal for highprecision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for
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2SC4814
2SC4814
2Sc4814 equivalent
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Untitled
Abstract: No abstract text available
Text: UTC IMX17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES *Two 2SD1484K chips in an SMT package. *Mounting possible with SMT3 automatic mounting machine. *Transistor elements are independent, eliminating interference. *High collector current. Ic=500mA
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IMX17
2SD1484K
500mA
OT-26
QW-R215-001
500mA,
100mA
-20mA,
100MHz
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UG9H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS DESCRIPTION The UTC UG9H is a dual digital transistor, the transistor elements are independent and obviating interference, so the mounting cost and
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OT-363
QW-R218-026
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marking R33
Abstract: 2SC4227 2SC4227-T1
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4227 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
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2SC4227
2SC4227
S21e2
2SC4227-T1
marking R33
2SC4227-T1
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2SC4226
Abstract: 2SC4226 APPLICATION NOTES PU10450EJ01V0DS R25 marking 2SC4226 datasheet marking r25 NPN 2SC4226-T1 transistor s2p
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4226 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
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2SC4226
2SC4226
S21e2
2SC4226-T1
2SC4226 APPLICATION NOTES
PU10450EJ01V0DS
R25 marking
2SC4226 datasheet
marking r25 NPN
2SC4226-T1
transistor s2p
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QCA30B60
Abstract: QCA30A60 qca30a QCA30B40 QCB30A40 QCB30A60 c2e1
Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max
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QCA30B/QCB30A40/60
E76102
QCA30B
QCB30A
94max
110TAB
32max
31max
35max
QCA30B60
QCA30A60
qca30a
QCA30B40
QCB30A40
QCB30A60
c2e1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter
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DTA114YE
OT-416/SC-90
b3b7255
b3b72S5
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter
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DTA143EE
OT-416/SC-90
0CH305G
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Untitled
Abstract: No abstract text available
Text: MJE13007 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH CURRENT CAPABILITY APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL DESCRIPTION The MJE13007 is a silicon multiepitaxial mesa NPN power transistor mounted in Jedec T0-220
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MJE13007
MJE13007
T0-220
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