irf150
Abstract: MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150
Text: IRF150 Data Sheet March 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET • 40A, 100V Formerly Developmental Type TA17421. Ordering Information PACKAGE 1824.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRF150
TA17421.
irf150
MOSFET IRF150
TA17421
TB334
circuits of IRF150
40A100V
IRF-150
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4311 mosfet transistor
Abstract: tl 4311 transistor tl 4311 IRFP150 TB334 T2T-2
Text: IRFP150 Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRFP150
TA17431.
O-247
4311 mosfet transistor
tl 4311
transistor tl 4311
IRFP150
TB334
T2T-2
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IRFP150
Abstract: 150N TB334
Text: S N ESIG W D CT E N FOR ODU DED UTE PR N E STIT OMM REC LE SUB 150N T O N FP SIB Data IR Sheet POS 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRFP15
TA17431.
IRFP150
150N
TB334
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0305S
Abstract: SCM040600 EN61000-4-2 EN61000-4-3 WF09 WF141100
Text: celduc r e l a i S/CON/SCM040600/A/16/03/05 s PRELIMINARY DATA Page 1/5 GB MOSFET BASED DC SOLID STATE RELAY SCM040600 X Latest MOSFET technology generation. X Ultra low on-state resistance. X New innovative isolated driver ensuring fast power transistor
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S/CON/SCM040600/A/16/03/05
SCM040600
1K470000
0305S
SCM040600
EN61000-4-2
EN61000-4-3
WF09
WF141100
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G40N60
Abstract: g40n60c3 HGTG40N60C3 LD26 RHRP3060 g40n
Text: HGTG40N60C3 Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction
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HGTG40N60C3
HGTG40N60C3
150oC.
100ns
150oC
G40N60
g40n60c3
LD26
RHRP3060
g40n
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G40N60
Abstract: HGTG40N60C3 LD26 RHRP3060 g40n60c3
Text: HGTG40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction
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HGTG40N60C3
HGTG40N60C3
150oC.
100ns
150oC
G40N60
LD26
RHRP3060
g40n60c3
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G40N60
Abstract: g40n60c3 HGTG40N60C3 ge 047 TRANSISTOR LD26 RHRP3060 TA49273
Text: HGTG40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction
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HGTG40N60C3
HGTG40N60C3
150oC.
100ns
150oC
G40N60
g40n60c3
ge 047 TRANSISTOR
LD26
RHRP3060
TA49273
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S60DC40
Abstract: varistor ve 17 NFEN55011 varistor wiring diagram IEC60947-1
Text: Series S60DC40 Output to 40A, 600 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and off and thus low power transient
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S60DC40
100Hz
700Hz
S60DC40
S60DC40\022009\Q1
varistor ve 17
NFEN55011
varistor wiring diagram
IEC60947-1
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Untitled
Abstract: No abstract text available
Text: Series S60DC40 Output to 40A, 600 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and of and thus low power transient
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S60DC40
100Hz
700Hz
S60DC40
S60DC40\022009\Q1
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40N60A4
Abstract: HGTG40N60A4 HGT1Y40N60A4D LD26 TA49347
Text: HGTG40N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a
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HGTG40N60A4
HGTG40N60A4
150oC.
100kHz
200kHz
40N60A4
HGT1Y40N60A4D
LD26
TA49347
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Untitled
Abstract: No abstract text available
Text: NEW Series S60DC40 Output to 40A, 600 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and off and thus low power transient
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S60DC40
100Hz
700Hz
S60DC40
S60DC40\102006\Q1
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CHM80N75NGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 75 Volts CHM80N75NGP CURRENT 80 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small package. D2PAK
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CHM80N75NGP
250uA
CHM80N75NGP
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CHM72A3PAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM72A3PAGP CURRENT 70 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE
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CHM72A3PAGP
O-252)
CHM72A3PAGP
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CHM61A3PAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM61A3PAGP CURRENT 40 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE
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CHM61A3PAGP
O-252)
CHM61A3PAGP
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ECH8901
Abstract: No abstract text available
Text: ECH8901 Ordering number : ENA1472 SANYO Semiconductors DATA SHEET ECH8901 Appllications • PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET General-Purpose Switching Device Applications Charger. Features • • • • Composite type, facilitating high-density mounting.
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ECH8901
ENA1472
A1472-6/6
ECH8901
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CHM8030LANGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM8030LANGP CURRENT 75 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. D2PAK
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CHM8030LANGP
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Untitled
Abstract: No abstract text available
Text: ECH8901 Ordering number : ENA1472 SANYO Semiconductors DATA SHEET ECH8901 Appllications • PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET General-Purpose Switching Device Applications Charger. Features • • • • Composite type, facilitating high-density mounting.
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ECH8901
ENA1472
A1472-6/6
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM76139NPT CURRENT 75 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. D2PAK
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CHM76139NPT
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHM72A3NPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 75 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. D2PAK
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CHM83A3NGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHM83A3NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. D2PAK
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CHM83A3NGP
CHM83A3NGP
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CHM76139NGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM76139NGP CURRENT 75 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. D2PAK
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CHM76139NGP
CHM76139NGP
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM8030LANPT CURRENT 75 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. D2PAK
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CHM8030LANPT
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHM83A3NPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. D2PAK
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CHM83A3NPT
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Untitled
Abstract: No abstract text available
Text: IRFP150 Semiconductor Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP150
O-247
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