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    TRANSISTOR MOTOROLA 416 IC Search Results

    TRANSISTOR MOTOROLA 416 IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MOTOROLA 416 IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3819

    Abstract: BC237 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-416/SC–90 package which is designed for


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    PDF OT-416/SC 7-inch/3000 2SC4617 SURFAC218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 2N3819 BC237 BCY72

    DTC114TE

    Abstract: SMD310 motorola DTC114TE
    Text: MOTOROLA Order this document by DTC114TE/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a


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    PDF DTC114TE/D DTC114TE 416/SC DTC114TE/D* DTC114TE SMD310 motorola DTC114TE

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon MMBTA70LT1 COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Emitter–Base Voltage VEBO –4.0 Vdc IC –100 mAdc


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    PDF MMBTA70LT1 236AB)

    2SA1774

    Abstract: SMD310
    Text: MOTOROLA Order this document by 2SA1774/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor 2SA1774 This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT–416/SC–90 package which is designed for low power


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    PDF 2SA1774/D 2SA1774 416/SC inch/3000 2SA1774 SMD310

    2SC4617

    Abstract: SMD310
    Text: MOTOROLA Order this document by 2SC4617/D SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications.


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    PDF 2SC4617/D 2SC4617 OT-416/SC 7-inch/3000 2SC4617/D* 2SC4617 SMD310

    DTA114GE

    Abstract: SMD310
    Text: MOTOROLA Order this document by DTA114GE/D SEMICONDUCTOR TECHNICAL DATA DTA114GE Product Preview General Purpose Transistor PNP Bipolar Junction Transistor with a 10 kW Base–Emitter Resistor 50 Volts 100 mAmps 150 mW MAXIMUM RATINGS TJ = 25°C unless otherwise noted


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    PDF DTA114GE/D DTA114GE DTA114GE SMD310

    transistor sc59 marking

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a


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    PDF DTC114TE DTC114TE 416/SC transistor sc59 marking

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BF721T1 PNP Silicon Transistor Motorola Preferred Device COLLECTOR 2,4 PNP SILICON TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS 4 Symbol Value Unit Collector-Emitter Voltage Rating VCEO – 300 Vdc Collector-Base Voltage


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    PDF BF721T1 318E-04, O-261AA)

    SC-70ML

    Abstract: marking CER 5-pin
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Transistor BF720T1 Motorola Preferred Device COLLECTOR 2,4 BASE 1 NPN SILICON TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value Unit Collector-Emitter Voltage VCEO 300 Vdc Collector-Base Voltage


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    PDF BF720T1 318E-04, O-261AA) SC-70ML marking CER 5-pin

    Sc59

    Abstract: marking H2A sot-23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 4 MAXIMUM RATINGS 1 Rating Symbol


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    PDF OT-223 BSP16T1 318E-04, O-261AA Sc59 marking H2A sot-23

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Complementary Pair Transistor PNP/NPN Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 MMPQ6700 Voltage and current are negative for PNP transistors MAXIMUM RATINGS Rating Symbol Value Unit VCEO 40 Vdc Collector – Base Voltage


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    PDF MMPQ6700

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP62T1 PNP Small-Signal Darlington Transistor Motorola Preferred Device This PNP small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is


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    PDF OT-223 BSP62T1 inch/1000 BSP62T3 inch/4000 BSP52T1 BSP62T1

    PNP TRANSISTORS SC-70 SOT363

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA UHF/VHF Transistor MMBTH69LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device • Designed for UHF/VHF Amplifier Applications 1 BASE • High Current Gain Bandwidth Product fT = 2000 MHz Min @ 10 mA 2 EMITTER 3 MAXIMUM RATINGS


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    PDF MMBTH69LT1 236AB) PNP TRANSISTORS SC-70 SOT363

    transistor code AS3

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Small-Signal Darlington Transistor BSP52T1 Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is


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    PDF OT-223 BSP52T1 inch/1000 BSP52T3 inch/4000 BSP62T1 BSP52T1 transistor code AS3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP68T1 NPN Silicon Epitaxial Transistor Motorola Preferred Device This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for


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    PDF OT-223 BCP68T1 inch/1000 BCP68T3 inch/4000

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP69T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for


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    PDF OT-223 BCP69T1 inch/1000 BCP69T3 inch/4000

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Driver Transistor BSS64LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage VCBO 120 Vdc Emitter – Base Voltage


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    PDF BSS64LT1 236AB) 15NOT

    sot-23 Marking 3D

    Abstract: SC59 Marking 3D MMBTH81LT1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA UHF/VHF Transistor MMBTH81LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –20 Vdc Collector–Base Voltage VCBO –20


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    PDF MMBTH81LT1 236AB) sot-23 Marking 3D SC59 Marking 3D MMBTH81LT1

    transistor 45 f 122

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP53T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for


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    PDF OT-223 BCP56 BCP53T1 inch/1000 BCP53T3 inch/4000 BCP53T1 transistor 45 f 122

    BCP56-16T1 equivalent

    Abstract: BL SOT223 SC 0715 BL
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP56T1 SERIES NPN Silicon Epitaxial Transistor Motorola Preferred Device These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for


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    PDF OT-223 BCP56T1 inch/1000 BCP56T3 inch/4000 BCP53T1 BCP56-16T1 equivalent BL SOT223 SC 0715 BL

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor 2SA1774 This PN P transistor is designed for general purpose amplifier applications. This device is housed in the SCIT-416/SC-90 package which is designed for low power


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    PDF SCIT-416/SC-90 7-inch/3000 2SA1774 2SA1774

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Prelim inary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The B RT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter


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    PDF DTA114YE -416/SC DTA114YE

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP D45C Com plem entary Silicon Power Transistor 4.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS . . . for general purpose driver or medium power output stages in CW or switching applications. • Low Collector-Emitter Saturation Voltage — 0.5 V Max


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    PDF 21A-06 220AB

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTC114YE Prelim inary Data Sheet Bias R esistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network T h e B R T B ia s R es is to r T ra n s is to r con ta in s a s ing le tran sis to r w ith a


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    PDF DTC114YE DTC114YE