2N3819
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-416/SC–90 package which is designed for
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OT-416/SC
7-inch/3000
2SC4617
SURFAC218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
2N3819
BC237
BCY72
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DTC114TE
Abstract: SMD310 motorola DTC114TE
Text: MOTOROLA Order this document by DTC114TE/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a
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DTC114TE/D
DTC114TE
416/SC
DTC114TE/D*
DTC114TE
SMD310
motorola DTC114TE
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon MMBTA70LT1 COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Emitter–Base Voltage VEBO –4.0 Vdc IC –100 mAdc
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MMBTA70LT1
236AB)
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2SA1774
Abstract: SMD310
Text: MOTOROLA Order this document by 2SA1774/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor 2SA1774 This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT–416/SC–90 package which is designed for low power
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2SA1774/D
2SA1774
416/SC
inch/3000
2SA1774
SMD310
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2SC4617
Abstract: SMD310
Text: MOTOROLA Order this document by 2SC4617/D SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications.
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2SC4617/D
2SC4617
OT-416/SC
7-inch/3000
2SC4617/D*
2SC4617
SMD310
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DTA114GE
Abstract: SMD310
Text: MOTOROLA Order this document by DTA114GE/D SEMICONDUCTOR TECHNICAL DATA DTA114GE Product Preview General Purpose Transistor PNP Bipolar Junction Transistor with a 10 kW Base–Emitter Resistor 50 Volts 100 mAmps 150 mW MAXIMUM RATINGS TJ = 25°C unless otherwise noted
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DTA114GE/D
DTA114GE
DTA114GE
SMD310
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transistor sc59 marking
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a
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DTC114TE
DTC114TE
416/SC
transistor sc59 marking
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BF721T1 PNP Silicon Transistor Motorola Preferred Device COLLECTOR 2,4 PNP SILICON TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS 4 Symbol Value Unit Collector-Emitter Voltage Rating VCEO – 300 Vdc Collector-Base Voltage
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BF721T1
318E-04,
O-261AA)
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SC-70ML
Abstract: marking CER 5-pin
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Transistor BF720T1 Motorola Preferred Device COLLECTOR 2,4 BASE 1 NPN SILICON TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value Unit Collector-Emitter Voltage VCEO 300 Vdc Collector-Base Voltage
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BF720T1
318E-04,
O-261AA)
SC-70ML
marking CER 5-pin
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Sc59
Abstract: marking H2A sot-23
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 4 MAXIMUM RATINGS 1 Rating Symbol
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OT-223
BSP16T1
318E-04,
O-261AA
Sc59
marking H2A sot-23
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Complementary Pair Transistor PNP/NPN Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 MMPQ6700 Voltage and current are negative for PNP transistors MAXIMUM RATINGS Rating Symbol Value Unit VCEO 40 Vdc Collector – Base Voltage
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MMPQ6700
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP62T1 PNP Small-Signal Darlington Transistor Motorola Preferred Device This PNP small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is
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OT-223
BSP62T1
inch/1000
BSP62T3
inch/4000
BSP52T1
BSP62T1
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PNP TRANSISTORS SC-70 SOT363
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA UHF/VHF Transistor MMBTH69LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device • Designed for UHF/VHF Amplifier Applications 1 BASE • High Current Gain Bandwidth Product fT = 2000 MHz Min @ 10 mA 2 EMITTER 3 MAXIMUM RATINGS
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MMBTH69LT1
236AB)
PNP TRANSISTORS SC-70 SOT363
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transistor code AS3
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Small-Signal Darlington Transistor BSP52T1 Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is
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OT-223
BSP52T1
inch/1000
BSP52T3
inch/4000
BSP62T1
BSP52T1
transistor code AS3
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP68T1 NPN Silicon Epitaxial Transistor Motorola Preferred Device This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for
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OT-223
BCP68T1
inch/1000
BCP68T3
inch/4000
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP69T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for
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OT-223
BCP69T1
inch/1000
BCP69T3
inch/4000
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Driver Transistor BSS64LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage VCBO 120 Vdc Emitter – Base Voltage
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BSS64LT1
236AB)
15NOT
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sot-23 Marking 3D
Abstract: SC59 Marking 3D MMBTH81LT1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA UHF/VHF Transistor MMBTH81LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –20 Vdc Collector–Base Voltage VCBO –20
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MMBTH81LT1
236AB)
sot-23 Marking 3D
SC59 Marking 3D
MMBTH81LT1
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transistor 45 f 122
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP53T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for
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OT-223
BCP56
BCP53T1
inch/1000
BCP53T3
inch/4000
BCP53T1
transistor 45 f 122
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BCP56-16T1 equivalent
Abstract: BL SOT223 SC 0715 BL
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP56T1 SERIES NPN Silicon Epitaxial Transistor Motorola Preferred Device These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for
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OT-223
BCP56T1
inch/1000
BCP56T3
inch/4000
BCP53T1
BCP56-16T1 equivalent
BL SOT223
SC 0715 BL
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor 2SA1774 This PN P transistor is designed for general purpose amplifier applications. This device is housed in the SCIT-416/SC-90 package which is designed for low power
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SCIT-416/SC-90
7-inch/3000
2SA1774
2SA1774
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Prelim inary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The B RT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter
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DTA114YE
-416/SC
DTA114YE
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP D45C Com plem entary Silicon Power Transistor 4.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS . . . for general purpose driver or medium power output stages in CW or switching applications. • Low Collector-Emitter Saturation Voltage — 0.5 V Max
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21A-06
220AB
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTC114YE Prelim inary Data Sheet Bias R esistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network T h e B R T B ia s R es is to r T ra n s is to r con ta in s a s ing le tran sis to r w ith a
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DTC114YE
DTC114YE
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