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    TRANSISTOR MPSA13 Search Results

    TRANSISTOR MPSA13 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MPSA13 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor

    mpsa13l

    Abstract: mpsa13 MPSA13G
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR  DESCRIPTION The UTC MPSA13 is a Darlington transistor.  FEATURES * Collector-Emitter Voltage: VCES = 30V  ORDERING INFORMATION Order Number Package Lead Free


    Original     		PDF MPSA13 MPSA13 MPSA13L-AB3-R MPSA13G-AB3-R OT-89 MPSA13L-T92-B MPSA13G-T92-B MPSA13L-T92-K MPSA13G-T92-K MPSA13L-T92-A-B mpsa13l MPSA13G

    MPSA13L

    Abstract: utc mpsa13
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC MPSA13 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V „ ORDERING INFORMATION Order Number Normal Lead Free


    Original     		PDF MPSA13 MPSA13 OT-89 MPSA13-AB3-R MPSA13L-AB3-R MPSA13G-AB3-R MPSA13-T92-B MPSA13L-T92-B MPSA13G-T92-B MPSA13-T92-K MPSA13L utc mpsa13

    MPSA13L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR  DESCRIPTION The UTC MPSA13 is a Darlington transistor.  FEATURES * Collector-Emitter Voltage: VCES = 30V  ORDERING INFORMATION Order Number Package Lead Free


    Original     		PDF MPSA13 MPSA13 MPSA13L-AB3-R MPSA13G-AB3-R OT-89 MPSA13L-T92-B MPSA13G-T92-B MPSA13L-T92-K MPSA13G-T92-K QW-R208-001 MPSA13L

    MPSA13L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC MPSA13 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V „ ORDERING INFORMATION Order Number Package Lead Free


    Original     		PDF MPSA13 MPSA13 MPSA13L-AB3-R MPSA13G-AB3-R OT-89 MPSA13L-T92-B MPSA13G-T92-B MPSA13L-T92-K MPSA13G-T92-K MPSA13L-T92-A-B MPSA13L

    MPSA13

    Abstract: PT 10000
    Text: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    Original     		PDF MPSA13 QW-R201-016 PT 10000

    MPSA13

    Abstract: utc mpsa13
    Text: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. 1 FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    Original     		PDF MPSA13 OT-89 QW-R208-001 utc mpsa13

    MPSA13

    Abstract: vbe 10v, vce 5v NPN Transistor utc mpsa13
    Text: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. 1 FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    Original     		PDF MPSA13 OT-89 100ms QW-R208-001 vbe 10v, vce 5v NPN Transistor utc mpsa13

    Darlington transistor

    Abstract: MPSA13 transistor 625
    Text: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    Original     		PDF MPSA13 100ms QW-R201-016 Darlington transistor transistor 625

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    MPSA13

    Abstract: MPS-A13 MPSA14
    Text: MPSA13 / 14 NPN Silicon Epitaxial Planar Transistors for general purpose applications, darlington transistor. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF MPSA13 100mA 100Adc 100mA, 100MHz MPS-A13 MPSA14

    MPSA13

    Abstract: MPS-A13 MPSA14
    Text: MPSA13 / 14 NPN Silicon Epitaxial Planar Transistors for general purpose applications, darlington transistor. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF MPSA13 100mA 100Adc 100mA, 100MHz MPS-A13 MPSA14

    MPSA13

    Abstract: MPSA14 MPS-A13
    Text: MPSA13 / 14 NPN Silicon Epitaxial Planar Transistors for general purpose applications, darlington transistor. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF MPSA13 100mA 100Adc 100mA, 100MHz MPSA14 MPS-A13

    TRANSISTORS BJT bc548

    Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
    Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002


    Original     		PDF OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302

    Darlington Transistor

    Abstract: MPSA13 MPSA14
    Text: SEMICONDUCTOR MPSA13/14 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR. C A B N E K G J D RATING UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCES 30 V Emitter-Base Voltage VEBO 10 V


    Original     		PDF MPSA13/14 100mA, MPSA13 MPSA14 100MHz, Darlington Transistor MPSA13 MPSA14

    MPSA13

    Abstract: MPSA14
    Text: MPSA13 / 14 NPN Epitaxial Silicon Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Darlington TRANSISTOR 1 Power dissipation 2 0.625 PCM: 3 W Tamb=25℃ 1 2 3 Collector current ICM: 0.5 A Collector-base voltage


    Original     		PDF MPSA13 270TYP 050TYP 01-Jun-2002 MPSA14

    MJE2955

    Abstract: 2N3645 bc557 BC307 BC212
    Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu­ The facturer


    OCR Scan     		PDF O-92SP O-237 O-220 O-928> iO051 MJE2955 2N3645 bc557 BC307 BC212

    MPS A13 transistor

    Abstract: MPS A13 MPS-A13 MPS-A13-14 MPSA13 MPSA14
    Text: MPSA13/14 SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CES 30 V


    OCR Scan     		PDF A13/14 1000IB MPS A13 transistor MPS A13 MPS-A13 MPS-A13-14 MPSA13 MPSA14

    Untitled

    Abstract: No abstract text available
    Text: P e> MPSA13 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR Package: TO-92 * Collector-Emitter Voltage Vces=30V * Collector Dissipation Pc max =625 mW (Ta=25°C) ABSOLUTE MAXIMUM RATINGS at Tanrt-25*C


    OCR Scan     		PDF MPSA13 Tanrt-25 300uS 100mA 100mA 100MHZ

    transistor A62

    Abstract: MPSA63 MPSA62 MPS-A63 MPSA64 Transistor MPSA63
    Text: SEMICONDUCTOR TECHNICAL DATA MPSA62/63/64 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. FEATURES • Complementary to MPSA13/14. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT -20 C o lle c to r-B a se MPSA62


    OCR Scan     		PDF MPSA62/63/64 MPSA13/14. MPSA62 MPSA63/64 A62/63/64 transistor A62 MPSA63 MPS-A63 MPSA64 Transistor MPSA63

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E D Hi 7=1134142 GOOIOSfl T ElSMGK NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA13 DARLINGTON TRANSISTOR • Collector-Em itter Voltage: V Ce s = 30V • C ollector Dissipation: P 0 max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF MPSA13 625mW

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA13 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: VCEs=30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Rating Unit 30 30 10 500 625 150 -5 5 -1 5 0 V V V


    OCR Scan     		PDF MPSA13 625mW 100mA, 100MHz 300/vs,