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Abstract: No abstract text available
Text: Qs.iis.ij ^Ss-mL-donductoi lArooucfi, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF416 *BF418 PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNPSILICIUM, PLANAR EPITAXIAL Compl. of BF 415 and BF 417
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BF416
BF418
-25mA)
-250V
-300V
70MHz
O-126-
CB-16
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Untitled
Abstract: No abstract text available
Text: eSe-rnl-donauctoi LPioaueti, One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TYPE 2N6128 N-P-N SILICON POWER TRANSISTOR HIGH-FREQUENCY, HIGH-POWER TRANSISTOR WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY
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2N6128
2IM6127
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fleld-effect power transistor in a plastic envelope suitable for surface mount applications.
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BUK581-60A
OT223
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clap switch
Abstract: clap switch applications BUL216
Text: rZ Z SCS-THOMSON ^7 # IHIIiGMilnaafiBiMllcg; BUL216 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH OPERATING JUNCTION TEMPERATURE . HIGH RUGGEDNESS
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BUL216
BUL216
O-220
clap switch
clap switch applications
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MUM2211T1
Abstract: marking 8A 2216t
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its
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SC-59
MUN2211T1
MUM2211T1
marking 8A
2216t
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TRANSISTOR LD25
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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BUK9524-55
T0220AB
TRANSISTOR LD25
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2522AF
1E-06
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE I UL DbE D 1 bbS3T31 0D1SDST I MRB12175YR MAINTENANCE TYPE for new design use MRB11175Y PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IFF applications.
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bbS3T31
MRB12175YR
MRB11175Y)
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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Untitled
Abstract: No abstract text available
Text: Wtipl H E W L E T T mLftMP A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Am plifier Tested 900 MHz
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AT-31011
AT-31033
AT-31011:
AT-31033:
OT-143
AT-31011
AT-31033
5963-1862E
5965-1401E
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transistor BD 522
Abstract: bd800 bd802 TRANSISTOR BD 168 BD798 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800
Text: MOTORCLA SC XSTRS/R 12E F D I b3fcj72SM MOTOROLA Qüfl MTST " M | BD796 BD798 SEMICONDUCTOR TECHNICAL DATA BÒ800 BD8Û2 PLASTIC HIGH POWER SILICON PNP TRANSISTOR 8 AMPERE POWER TRANSISTOR . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.
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b3fcj72SM
BD796
BD798
BD798
BD800
BD802
transistor BD 522
TRANSISTOR BD 168
transistor L33
L33 TRANSISTOR
BD79
BD800 MOTOROLA
transistor BD 800
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horizontal section in crt television
Abstract: Electron Tubes crt DEPLETION electron gun CRT
Text: ^ 5 1?' 1* 5 1 ° .- J È 1 ° 7i -Q 33-C& ° w 30^ ¥ . • V No p ic Ì & ^ ^ g ig vb |ii.’Qf fo c u s ,';! arriicFocus Transistor M § fe 3 i ; Dynamic focuè' transistor^chip "1; transistors, with Very high withstand, voltage, by HVP process " - . •’
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MJ12010
Abstract: MR91S
Text: MOTOROLA SC XSTRS/R F 15 E 0 | t>3b72SM 00 05 1 0 3 2 | # MOTOROLA • SEMICONDUCTOR MJ12010 TECHNICAL DATA 10 A M P E R E HORIZONTAL DEFLECTION TRANSISTOR NPN SILICON POWER TRANSISTOR . specifically designed for use in C R T deflection circuits. • Collector-Emitter Voltage — V c E X “ 950 Volts
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3b72SM
MJ12010
11II1
MJ12010
MR91S
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IGBT 1MBH60-100
Abstract: J9100
Text: 1MBH60-100 ^ ± IG B T IGBT INSULATED GATE BIPOLAR TRANSISTOR • : Outline Drawings bkü : Features •H i â X ' • i& ü ü in liS • Hi gh Speed Switching Low Saturation Voltage Hfti/tCMOS-ir— MUie • :y High Impedance Gate Small Package 0. 6 * ■ ffliÊ : Applications
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1MBH60-100
l95t/RB9
IGBT 1MBH60-100
J9100
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BUX11
Abstract: No abstract text available
Text: fZ 7 ^ SCS-THOMSON 7# M O œ m iO T « ! BUX 11 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR D E S C R IP T IO N The BUX11 is a silicon muitiepitaxial NPN transis tor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and in
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BUX11
BUX11
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0015P
Abstract: No abstract text available
Text: TOSHIBA 3SK258 TOSHIBA FIELD EFFECT TRANSISTOR 3 SILICON N CHANNEL DUAL GATE MOS TYPE < ;i TV TUNER, VHF RF AM PLIFIER APPLICATIONS. FM TUNER APPLICATIONS. • • Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Crss = 0.015pF Typ.
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3SK258
015pF
0015P
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BUH715
Abstract: No abstract text available
Text: £ j ï SGS-THOMSON IILICTIiWIOlêS BUH715 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY • U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E 8 1 734 (N APPLICATIONS: . HORIZONTAL DEFLECTION FOR
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BUH715
ISOWATT218
E81734
BUH715
P025C
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2n5401TRANSISTOR
Abstract: 2n5401 toshiba 2n5401 transistor
Text: TOSHIBA 2N5401 Transistor Unit in mm | 5.1 MAX. Silicon PNP Epitaxial Type | For General Purpose Switching and Amplifier Applications 0.4 S Features 0.55MAX. 0.4 5 • High Collector Breakdown Voltage ' Vcbo = “ 160V, VCE0 = -150V • Low Leakage Current
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2N5401
-150V
-50nA
-120V
-50mA,
55MAX.
2n5401TRANSISTOR
2n5401 toshiba
2n5401 transistor
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BUX14
Abstract: transistor BUX14
Text: rz7 SCS-THOMSON ra ra w s *7M BUX14 [f HIGH VOLTAGE POWER SWITCH D E S C R IP T IO N The BUX14 is a silicon muitiepitaxiai mesa NPN transistor in Jedec TO-3 metal case, intended for high voltage, fast switching applications. A B S O L U T E M A X IM U M R A T IN G S
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BUX14
BUX14
transistor BUX14
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2N6702
Abstract: C 3311 transistor
Text: 7 ^ 2 3 7 002=1425 û • " 'T 3 3 -I SGS-THOMSON u n ilL J iS T M K i S G S-TH0MS0N 2 N6702 30E T> SWITCHING AND GENERAL PURPOSE DESCRIPTIO N The 2N6702 is a silicon muitiepitaxial planar NPN transistor and is mounted in Jedec TO-220 plastic package. It is intended for various switching and general pur
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2N6702
O-220
100mA
100KHz
100ms
300nsec.
C 3311 transistor
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