transistor bc 7-25 014
Abstract: transistor bc 7-25 transistor Bc 540 transistor Bc 540 pin tn3904 transistor TN3904 transistor bc 138 bc 103 transistor TRANSISTOR BC 237 BC 540 TRANSISTOR
Text: Transys Electronics L I M I T E D NPN SILICON PLANAR SWITCHING TRANSISTOR TN3904 TO-237 Plastic Package E BC General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous
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TN3904
O-237
mm/20
transistor bc 7-25 014
transistor bc 7-25
transistor Bc 540
transistor Bc 540 pin
tn3904 transistor
TN3904
transistor bc 138
bc 103 transistor
TRANSISTOR BC 237
BC 540 TRANSISTOR
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DMILL
Abstract: RAD HARD TRENCH TRANSISTOR BPSG HEP transistors hep silicon diode 1E14 temic jfet jfet n channel ultra low noise nuclear Neutron Radiation Detector
Text: 10MRAD Si DMILL Mixed Analog/Digital Radiation Hard BiCMOS An emerging need in HEP MPW The decision to develop new equipment for High Energy Physics (HEP) research has led the need for ultra rad hard technology. The radiation tolerance for detector electronics adjacent to proton collision
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10MRAD
D-85386
I-20157
DMILL
RAD HARD TRENCH TRANSISTOR
BPSG
HEP transistors
hep silicon diode
1E14
temic jfet
jfet n channel ultra low noise
nuclear
Neutron Radiation Detector
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transistor Bc 540
Abstract: transistor bc 7-25 TR BC 237 B transistor Bc 540 pin transistor bc 237 b TN2222A
Text: Transys Electronics L I M I T E D NPN SILICON PLANAR SWITCHING TRANSISTOR TN2222A TO-237 Plastic Package E BC For use as a Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous
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TN2222A
O-237
mm/20
transistor Bc 540
transistor bc 7-25
TR BC 237 B
transistor Bc 540 pin
transistor bc 237 b
TN2222A
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transistor Bc 540
Abstract: transistor bc 7-25 TN3904 tn3904 transistor transistor Bc 540 pin
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTOR TN3904 TO-237 Plastic Package E BC General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage
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ISO/TS16949
TN3904
O-237
C-120
TN3904Rev080304E
transistor Bc 540
transistor bc 7-25
TN3904
tn3904 transistor
transistor Bc 540 pin
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transistor B A O 331
Abstract: C 331 Transistor KSR1001 d 331 TRANSISTOR equivalent
Text: KSR1001 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esisto r Built In • Sw itching circuit, Inverter, Interface circu it, D river C ircu it • B uilt in b ias R e sisto r (R,«4.7kÜ, R î «4.71cQ) • Com plem ent to KSR2001 ABSOLUTE MAXIMUM RATINGS (TA-251C)
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KSR1001
KSR2001
TA-251C)
transistor B A O 331
C 331 Transistor
KSR1001
d 331 TRANSISTOR equivalent
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transistor 711
Abstract: DO 127 samsung tv
Text: IME D I 7 ^ 4 1 4 2 Q007b?7 b | NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5016 SAM SUN G SEM ICOND UC TO R INC T-33-11 V COLOR TV HORIZONTAL OUTPUT APPLICATIONS TO-3P F High Collector-Bass Vottags Vcso=1500V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic
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Q007b
KSD5016
T-33-11
GQG77fe
transistor 711
DO 127
samsung tv
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC 1 14E D I 7 % ^ ^ 0007710 I : t - MJE3055T NPN SILICON TRANSISTOR GENERAL PURPOSE AN6 SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES High C urrent Gain-Bandwidth Product fT = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (T«=25°C)
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MJE3055T
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equivalent transistor c 243
Abstract: samsung tv
Text: SAMSU NG SEMICONDUCTOR INC D | 7^4142 GOO?b b f l 5 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5013 T -3 3 -1 1 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN High Collector-Base Voltage VCbo=1500V ABSOLUTE M AXIM UM RATINGS (Ta = 25°C )
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KSD5013
0QG77fe
equivalent transistor c 243
samsung tv
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transistor a 92 a 331
Abstract: TRANSISTOR Q 667 transistor samsung tv transistor D 667 D F 331 TRANSISTOR C 3311 transistor
Text: IME D I 7^4142 G00?b?4 I NPN TRIPLE DIFFUSED KSD5015 SAMSUNG SEMICONDUCTCR PLANAR SILICON TRANSISTOR INC COLOR TV HORIZONTAL OUTPUT APPLICATIONS T -33-11 TO-3P(F High Collector-Base Voltage Vceo-ISOOV ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic
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KSD5015
CTO-92
0QG77fe
transistor a 92 a 331
TRANSISTOR Q 667
transistor
samsung tv
transistor D 667
D F 331 TRANSISTOR
C 3311 transistor
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samsung tv
Abstract: 4142
Text: SAMSUNG INC S EM I C ON D U C T O R KSC1520A IME 0007542 NPN EPITAXIAL SILICON TRANSISTOR " r-3 2 > - c n ~ COLOR TV CHROMA OUTPUT TO-202 • High Collector-Emitter \foltaga Veto =300V • Current Gain-Bandwldth Product fT=80MHz Typ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSC1520A
O-202
80MHz
GQG77fe
samsung tv
4142
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JE2955T
Abstract: JE2955
Text: SAMSUNG SEMICONDUCTOR IME O I INC MJE2955T 7*11,4142 G0077Gfl 5 | PNP SILICON TRANSISTOR T- GENERAL PURPOSE A n 6 SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES 2 • High Current Galn-Bandwldth Product fT = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (Ta= 25°C )
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MJE2955T
G0077Gfl
GQG77fe
JE2955T
JE2955
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D F 331 TRANSISTOR
Abstract: lt 332 diode samsung tv NPN Transistor 1A 800V to - 92 C 3311 transistor transistor t 04 27
Text: SAMSUNG SEMICONDUCTOR 14E 0 INC 17^4142 I OOQ?bkS T NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5012 T-33-11 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN TO-3P(F) High Collector-Base Voltage VCb o = 1 5 0 0 V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C )
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KSD5012
T-33-11
GQG77fe
D F 331 TRANSISTOR
lt 332 diode
samsung tv
NPN Transistor 1A 800V to - 92
C 3311 transistor
transistor t 04 27
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d 331 TRANSISTOR equivalent
Abstract: C 3311 transistor la 4142 74143
Text: SA MSUNG SEM ICO NDUCTOR INC 14E D | 7Tb4142 00071,5*1 4 I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5010 C o l o r t v h o r iz o n t a l o u t p u t APPLICATIONS DAMPER DIODE BUILT IN High Collector-Bass Voltage VCbo =1500V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)
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7Tb4142
KSD5010
GQG77fe
d 331 TRANSISTOR equivalent
C 3311 transistor
la 4142
74143
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equivalent of SL 100 NPN Transistor
Abstract: Transistor transistor a 92 a 331 transistor 711 "SAMSUNG SEMICONDUCTOR"
Text: SAMSUNG SEMICONDUCTOR 14E INC D » 711, 4142 OOOTbSO fl NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5005 COLOR TV HORIZONTAL' OUTPUT APPLICATIONS TO-3P HIQH Collector-Base Voltage Vc*o=1500V ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage
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KSD5005
GQG77fe
equivalent of SL 100 NPN Transistor
Transistor
transistor a 92 a 331
transistor 711
"SAMSUNG SEMICONDUCTOR"
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samsung 217
Abstract: samsung tv NPN Transistor 1A 800V to - 92 ksd5002
Text: SAMSUNG SEMICONDUCTOR 14E INC D 7^4142 0QQ7t41 7 KSD5002 "T-33-13 COLOR TV HORIZONTAL OUTPUT APPLICATIONS (DAMPER DIODE BUILT IN HIGH Collector-Base Voltage V c so = 1500V ABSOLUTE MAXIMUM RATINGS (TB= 2 5 0C) Characteristic I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR
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0QQ7t41
KSD5002
GQG77fe
samsung 217
samsung tv
NPN Transistor 1A 800V to - 92
ksd5002
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ts 4142
Abstract: ksa634 KSC1096
Text: SAMSUNG SEMICONDUCTOR INC 14E 0 KSA634 42 0007485 fi PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER POWER REGULATOR • Complement to KSC1096 • C ollector Current lc = -2 A • C ollector Dissipation PC=10W Tc =25',C ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSA634
KSC1096
GQG77fe
ts 4142
ksa634
KSC1096
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - SEPT 93_ FEATURES * 60 Volt V CE0 * 1 A m p c o n tin u o u s current P ,o r 1 W att R EFER TO ZTX451 FO R G R A P H S ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage
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ZTX451
100nA,
150mA,
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DTA124ECA
Abstract: transistor PNP A124e R1 II
Text: Transistors Digital transistors built-in resistors DTA124EE/DTA124EU A/DTA124EKA/ DTA124ECA/DTA124ESA •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Built-in bias resistors en ab le the configuration of an inverter circuit DTA124EE 1.0Î0.1
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DTA124EE/DTA124EU
/DTA124EKA/
DTA124ECA/DTA124ESA
SC-70
DTA124EE
E/DTA124EUA/DTA124EKA/DTA124ECA/DTA124ESA
100ii-200jit
-600f-1m
50m-100n?
-5m-10ra
DTA124ECA
transistor PNP A124e
R1 II
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KSC2749
Abstract: npn transistors 400V 1A To92 NPN TO92 400V
Text: SAMSUNG SEM ICONDUCTOR INC KSC2749 14E 0 | 7*^4142 0007573 5 | NPN EPITAXIAL SILICON TRANSISTOR T - Ì 3 - 3 HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS (T,=25°C Characteristic Rating Symbol Collector-Base Voltage Collector-Emitter Voltage
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KSC2749
GQG77fe
KSC2749
npn transistors 400V 1A To92
NPN TO92 400V
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Untitled
Abstract: No abstract text available
Text: SAM SUN G SE MI C O N D U C T OR INC MJE172 D | 7^145 ÛÛQîtTB *f | PNP EPITAXIAL SILICON TRANSISTOR T-33-17 LOW FREQUENCY AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Cofector-Base Voltage | CoBector-Emitter Voltage
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MJE172
T-33-17
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SE MICON DU CT OR MJE171 INC lqE 0 | QOG?^^ 2 | PNP EPITAXIAL SILICON TRANSISTOR T-33-17 LOW FREQUENCY AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATION TO*126 ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic • Coliector-Base Voltage • Collector-Emitter Voltage
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MJE171
T-33-17
GQG77fe
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Untitled
Abstract: No abstract text available
Text: / = 7 *7 M S G S - T H O M S O N s L IÈ T O « T D A 8 1 7 9 FS TV VERTICAL DEFLECTION BOOSTER • POWER AMPLIFIER ■ FLYBACK SUPPLY VOLTAGE SEPARATED ■ THERMAL PROTECTION DESCRIPTION Designed for monitors and high performance TVs, the TDA8179FS vertical deflection booster is able
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TDA8179FS
TDA8179FS
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SPWM for three Phase Inverter
Abstract: SPWM Inverter circuit sine wave modulated PWM Sine wave PWM DC to AC Inverter Circuits 1 HP SINGLE PHASE induction motor speed control using pwm inverter single phase SPWM IC three phase sine wave pwm circuit 3 phase sine wave pwm c source code design sine wave power inverter MODIFIED SINE WAVE INVERTER CIRCUIT
Text: A N 1310 Using th e M C 68332 M icrocontroller for AC Induction M otor Control Prepared by: Jeff Baum and Ken Berrlnger Discrete Applications and System s Engineering HISTORY ABSTRACT AC induction motors have been used for many years in a variety of applications. Three phase AC induction motors
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AN1310
MC68332
SPWM for three Phase Inverter
SPWM Inverter circuit
sine wave modulated PWM
Sine wave PWM DC to AC Inverter Circuits
1 HP SINGLE PHASE induction motor speed control using pwm inverter
single phase SPWM IC
three phase sine wave pwm circuit
3 phase sine wave pwm c source code
design sine wave power inverter
MODIFIED SINE WAVE INVERTER CIRCUIT
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2SC2485
Abstract: at0209 2SA1061
Text: PANASONIC INDL/ELEK -CIO 1EE D • b*132fl52 001044^ D Silicon Epitaxal Base "lesa Transistor -r-33 -13 T'-33-2/ 2SA1061 PNP 2SC2485(NPN) TOP-3 Package (See Page 36 For Dimensions) 2SA1061 (PNP) Absolute Maximum Ratings (Ta=25°C) item Collector-Base Voltage
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2SA1061
2SC2485
2SC2485
at0209
2SA1061
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