MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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2SCR523
Abstract: 2SCR523EB
Text: General purpose transistor 50V,0.1A 2SCR523M / 2SCR523EB / 2SCR523UB Dimensions (Unit : mm) Structure NPN silicon epitaxial planar transistor VMT3 Features 1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB. Applications Switch, LED driver Abbreviated symbol : NB
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2SCR523M
2SCR523EB
2SCR523UB
2SAR523M
2SAR523EB
2SAR523UB.
2SCR523UB
R1010A
2SCR523
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Untitled
Abstract: No abstract text available
Text: General purpose transistor 50V,0.1A 2SCR523M / 2SCR523EB / 2SCR523UB Structure NPN silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features 1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB. Applications Switch, LED driver Abbreviated symbol : NB
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2SCR523M
2SCR523EB
2SCR523UB
2SAR523M
2SAR523EB
2SAR523UB.
2SCR523M
2SCR523EB
R1010A
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Untitled
Abstract: No abstract text available
Text: General purpose transistor 50V,0.1A 2SCR523M / 2SCR523EB / 2SCR523UB Structure NPN silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features 1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB. Applications Switch, LED driver Abbreviated symbol : NB
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2SCR523M
2SCR523EB
2SCR523UB
2SAR523M
2SAR523EB
2SAR523UB.
2SCR523M
2SCR523EB
R1010A
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for
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BUJ303B
O220AB
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BUJ103AX
Abstract: BP317 BU1706AX
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
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BUJ103AX
SCA60
135104/240/02/pp12
BUJ103AX
BP317
BU1706AX
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BP317
Abstract: BU1706AX BUJ204AX
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
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BUJ204AX
SCA60
135104/204/02/pp12
BP317
BU1706AX
BUJ204AX
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
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BUJ103A
O220AB
SCA60
135104/240/02/pp12
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BUJ204A
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for
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BUJ204A
O220AB
SCA60
135104/240/02/pp12
BUJ204A
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BUJ103AX
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
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BUJ103AX
BUJ103AX
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
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BUJ103AX
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for
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BUJ303B
BUJ303B
O220AB
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power Junction FET advantages and disadvantages
Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor
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ED-19,
5966-3084E
power Junction FET advantages and disadvantages
5257 transistor
thermal conductivity ceramic FET
2T transistor surface mount
microwave fet
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BUT211
Abstract: BUT21
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications.
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BUT211
O220AB
O220AB
BUT211
BUT21
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KS8245A1
Abstract: ks82 ks52
Text: m NBiEX KS8245A1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SltlQlO DsrlinCjtOn Transistor Module 15 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in
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KS8245A1
Amperes/600
KS8245A1
ks82
ks52
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON iMm@ignnCTisi«ii Sg¡ MJE210 SILICON PNP TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain
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MJE210
MJE210
OT-32
OT-32
O-126)
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Untitled
Abstract: No abstract text available
Text: m NBm x KD221K05HB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H lQ h 'B & t S Dual Darlington Transistor Module 50 Amperes/1000 Volts Description: The Powerex High-Beta Dual Darlington Transistor Modules are high power devices designed for
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KD221K05HB
Amperes/1000
peres/1000
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Untitled
Abstract: No abstract text available
Text: m NBΠX KD324515HB Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H iQ tl- B G t3 Dual Darlington Transistor Module 150 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex High-Beta Dual Darlington Transistor Modules are
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KD324515HB
Amperes/600
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KD324510
Abstract: No abstract text available
Text: m NBSK KD324510 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U d l D s r H flQ tO n Transistor Module 100 Amperes/600 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use
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KD324510
Amperes/600
KD324510
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope
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BUK581-100A
OT223
BUK581-100A
OT223.
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK562-60A Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for
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BUK562-60A
SQT404
BUK562-60A
tina14
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diode T-71
Abstract: BUK657-400B
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK657-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery
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BUK657-400B
T0220AB
BUK657-400B
diode T-71
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK583-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount
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BUK583-60A
OT223
BUK583-60A
OT223.
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