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    TRANSISTOR NEC CEL Search Results

    TRANSISTOR NEC CEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NEC CEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PA101B

    Abstract: PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00
    Text: Application Note HIGH FREQUENCY NPN TRANSISTOR ARRAYS µPA101 µPA102 µPA103 µPA104 Document No. P10944EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1995, 1999 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.


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    PDF PA101 PA102 PA103 PA104 P10944EJ2V0AN00 PA101B PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00

    10.4-inch lcd Color active matrix tft lcd panel

    Abstract: NL6448BC33-64 NL6448BC26-09 121PW181 NL6448BC33-63D NL8060BC31-42 Video Graphics Array "12.1 inch" lcd 104PW201 inch lcd
    Text: NEC LCD Technologies to Enhance Core Product Lineup of TFT LCD Modules for Industrial Use DUESSELDORF Germany and TOKYO (Japan); April 12, 2006 – NEC LCD Technologies today announced that it will begin successive shipment of five new amorphous silicon thin-film-transistor (TFT) liquid crystal display (LCD) samples by the end of June, 2006.


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    PDF NL8060BC31-41D 84PW031 84PW041 10.4-inch lcd Color active matrix tft lcd panel NL6448BC33-64 NL6448BC26-09 121PW181 NL6448BC33-63D NL8060BC31-42 Video Graphics Array "12.1 inch" lcd 104PW201 inch lcd

    PS2501 optocoupler

    Abstract: AN3010 nec optocoupler AN-3010 LINEAR OPTOCOUPLER PS2501-1-A AN3009
    Text: A p p l i c at i o n N o t e AN3010 Design Guideline for an NEC/CEL Optocoupler with Transistor Output Authors: Van N. Tran Staff Application Engineer, CEL Opto Semiconductors Larry Sisken Product Marketing Manager, CEL Opto Semiconductors Introduction A standard optocoupler provides signal transfer between


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    PDF AN3010 AN3009 PS2501 optocoupler AN3010 nec optocoupler AN-3010 LINEAR OPTOCOUPLER PS2501-1-A

    2561a

    Abstract: NEC 2561A 2561A NEC NEC 2561A w PS2561A-1 PS2561AL-1 PC 2561A E4 mark NEC 2561A circuit PS2561AL1-1
    Text: HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES FEATURES • HIGH ISOLATION VOLTAGE: BV = 5 000 Vr.m.s. PS2561A-1 PS2561AL-1 PS2561AL1-1 PS2561AL2-1 DESCRIPTION NEC’s PS2561A-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.


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    PDF PS2561A-1 PS2561AL-1 PS2561AL1-1 PS2561AL2-1 PS2561A-1 PS2561AL-1-E3, PS2561AL2-1-E3, PS2561AL-1-1-E3 PS2561AL-1 2561a NEC 2561A 2561A NEC NEC 2561A w PC 2561A E4 mark NEC 2561A circuit PS2561AL1-1

    PS9505

    Abstract: a 3120 opto HCPL-3120-000E equivalent A 3120 opto HCPL-3120-500E HCPL3120-000E HCPL3120 HCPL-3120-300 AN-3006 PS9505-V
    Text: A p p l i c at i o n N o t e AN 3006 Optocoupler Performance Comparison: NEC PS9505 vs. Avago HCPL-3120 Introduction Both the PS9505 and HCPL-3120 are optically-coupled isolators that employ a GaAlAs LED on the input side and a photo diode, a signal processing circuit, and a power output transistor on the output side. They feature large


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    PDF PS9505 HCPL-3120 HCPL-3120 PS9505 HCPL3120. HCPL-3120. a 3120 opto HCPL-3120-000E equivalent A 3120 opto HCPL-3120-500E HCPL3120-000E HCPL3120 HCPL-3120-300 AN-3006 PS9505-V

    81E TRANSISTOR

    Abstract: 2SC3282 2SC3282A NEC J 302 2SC3283A 2SC3283 J349 J475 NEM080481-12 NEM081081-12
    Text: NEC/ CALIFORNIA NEC SbE ]> • b4B7414 0002552 22b — CLASS C, 800-960 MHz, 12 VOLT POWER TRANSISTOR INECC \ ' Z Z -I s NEM080481-12 NEM081081-12 NEM082081B-12 NEM084081B-12 FEATURES DESCRIPTION AND APPLICATIONS • LOW OPERATING VOLTAGE: 13.5 V NEC’s NEM0800 series of NPN epitaxial UHF power


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    PDF b427414 0002SS2 NEM080481-12 NEM081081-12 NEM082081B-12 NEM084081B-12 NEM0800 NEM080481E-12 NEM081081E-12 81E TRANSISTOR 2SC3282 2SC3282A NEC J 302 2SC3283A 2SC3283 J349 J475

    UPD434000

    Abstract: CZ-70
    Text: NEC JUPD434000 524,288 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description The ¿JPD434000 is a 524,288-word by 8-bit static RAM fabricated with advanced silicon-gate technology. CMOS peripheral circuits and N-channel memory cells with thin-film transistor TFT loads make the


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    PDF uPD434000 JPD434000 288-word /PD434000 The/jPD43 15/uA JJPD434000 D434000 JUPD434000 CZ-70

    Untitled

    Abstract: No abstract text available
    Text: {JPD4216405 4M x 4-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Product Brief May 1994 Description Pin Configurations The //PD4216405 devices are dynamic CMOS RAMs with an optional hyper-page mode organized as 4,194,304 words by 4 bits. A single-transistor dynamic


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    PDF uPD4216405 64-ms JPD4216405 26-Pin iPD4216405G3-XX G3-50-7KD 4216405G 3-70-7KD //PD4216405LA-50

    Untitled

    Abstract: No abstract text available
    Text: {IPD4216805 2M x 8-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Product Brief April 1994 Description Pin Configurations The ¿¿PD4216805 devices are dynamic CMOS RAMs with an optional hyper-page mode organized as 2,097,152 words by 8 bits. A single-transistor dynamic


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    PDF uPD4216805 28-Pin nPD4216805G5-XX PD4216805 64-ms 6805G5-50-7JD /PD4216805G5-60-7JD //PD4216805G5-70 pPD4216805G5-50-7KD iPD4216805G5-60-7KD

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC COMPOUND TRANSISTOR _jfPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIMENSIONS Units in mm FEATURES • TW O BUILT-IN DIFFER EN TIA L AM PLIFIER CIRCUITS: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)


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    PDF uPA102 PA102B: PA102G: 14-pin PA102

    Untitled

    Abstract: No abstract text available
    Text: pPD4216165 1M X 16-Bit Dynamic CM OS RAM NEC NEC Electronics Inc. Product Brief April 1994 Description Pin Configurations The ji/PD4216165 devices are dynam ic CM O S RAMs with an optional hyper-page mode organized as 1,048,576 words by 16 bits. A single-transistor dynam ic storage


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    PDF pPD4216165 16-Bit ji/PD4216165 42-Pin 64-ms /JPD4216165G5-70 //PD4216165G5-50-7KF JUPD4216165G5-60 /iPD4216165G5-70 //PD4216165LE-50

    Untitled

    Abstract: No abstract text available
    Text: NEC TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hFE CONNECTION DIAGRAM (Topview) UPA102G 14 LINEARITY • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE


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    PDF UPA102G UPA102G OUTUNEG14 UPA102G-E1 2500/REEL

    2SB804

    Abstract: D100-5A
    Text: DATA SHEET NEC / SILICON TRANSISTOR _ / 2SB804 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DE SC R IPTIO N The 2SB804 is designed fo r audio frequency pow er a m p lifie r a pp lica tion, especially in H y b rid Integrated Circuits. FE A TU R E S


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    PDF 2SB804 2SB804 D100-5A

    4 npn transistor ic 14pin

    Abstract: PA1032 8 npn transistor ic 14pin
    Text: DATA SHEET NEC COMPOUND TRANSISTOR _jfPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIM ENSIONS Units in mm FEATURES • FIVE M O NO LITHIC 9 GHz fr T R A NSISTO R S: ¿fPA103 B Two of these use a common em itter pin and can be used as differential am plifiers


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    PDF iPA103B: iPA103G: 14-pin fPA103 PA103 14-pin 4 npn transistor ic 14pin PA1032 8 npn transistor ic 14pin

    nec transistor

    Abstract: No abstract text available
    Text: NEC TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 G H z Single Transistors • OUTSTANDING hFE LINEARITY UPA102G CONNECTION DIAGRAM (Top view ) UPA102G 14 • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE


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    PDF UPA102G UPA102G hM27S25 UPA102G-E1 2500/REEL nec transistor

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 2M-BIT CMOS SYNCHRONOUS FAST 64K-WORD BY 32-BIT PIPELINED OPERATION SRAM Description The /iP D 432232L is a 65,536-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


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    PDF 64K-WORD 32-BIT uPD432232L 536-word PD432232L

    Untitled

    Abstract: No abstract text available
    Text: NEC UPA103B UPA103G TRANSISTOR ARRAY CONNECTION DIAGRAM FEATURES FIVE MONOLITHIC 9 GHz fr TRANSISTORS: Two of these use a common emitter pin and can be jsed as differential amplifiers Top View UPA103B 14 13 12 11 10 9 8 OUTSTANDING hFE LINEARITY TWO PACKAGE OPTIONS:


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    PDF JPA103B: UPA103G: 14-pin UPA103B UPA103G UPA103B UPA103B/G UPA103G

    MC-424000A8BA-60

    Abstract: MC-424000A8
    Text: NEC Electronics Inc. Description MC-424000A8 4,194,304 X 8-Bit Dynamic CMOS RAM Module Pin Configuration The MC-424000A8 is a fast-page 4,194,304-word by 8-bit dynamic RAM module designed to operate from a single +5-volt power supply. Advanced CMOS cir­ cuitry, including a single-transistor storage cell, multi­


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    PDF MC-424000A8 MC-424000A8 304-word C-424000A8: 13dia C-42400M 63CL-6833B MC-424000A8BA-60

    2SC3584

    Abstract: ne3813 SC358 NE68133 10r 236 NE68100 NE AND "micro-X" el3025 2SC3582 2SC3583
    Text: N E C / CALIFORNIA 1SE NEC J> b427414 OOG144S 7 NPN SILICON HIGH FREQUENCY TRANSISTOR T-3I-& T -3 I-I7 NE68100 NE68132 NE68133 NE68135 NE68137 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz The NE681 series of NPN silicon transistors are designed for


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    PDF OOG144S NE68100 NE68132 NE68133 NE68135 NE68137 NE68100, NE68135. NE681 2SC3584 ne3813 SC358 10r 236 NE AND "micro-X" el3025 2SC3582 2SC3583

    2SC2407

    Abstract: nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592
    Text: N E C/ 1SE CALIFORNIA L4H7414 D 0001310 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES NE416 SERIES DESCRIPTION AND APPLICATIONS The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The series provides economical solutions to a wide range of ampli­


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    PDF L4H7414 NE416 T-33-Ã 2SC2407 nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592

    Untitled

    Abstract: No abstract text available
    Text: DA TA SHEET NEC / _ / TFT COLOR LCD MODULE N L6448AC20-06 17cm 6.5 type , 640x480 pixels 262144/4096 colors, incorporated edge-light type backlight high brightness, inverter separated from module DESCRIPTION NL6448AC20-06 is a TFT(thin film transistor) active m atrix color liquid crystal display(LCD) com prising am or­


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    PDF L6448AC20-06 640x480 NL6448AC20-06

    2SC2407 equivalent

    Abstract: 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600
    Text: N E C/ 1SE CALIFORNIA L4H7414 D 0001.310 L> T -3 H T T NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE: 1 dB at 70 MHz The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The


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    PDF L4H7414 NE416 for23 2SC2407 equivalent 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600

    MC-424000A9BA

    Abstract: C-424000A9BA simm 30-pin 9-bit MC-424000A9
    Text: jW X Y * t i M2à W NEC Electronics Inc. Description The M C-424000A9 and the M C-424100A9 are fast-page 4,194,304-word by 9-bit dynam ic RAM modules de­ signed to o perate from a single + 5 -v o lt power supply. Advanced CM OS circuitry, including a single-transistor


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    PDF MC-424000A9, -424100A9 MC-424000A9 C-424100A9 304-word PD424100 dur005 30-Pin MC-424000A9BA) C-424000A9BA MC-424000A9BA C-424000A9BA simm 30-pin 9-bit

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET EET PHOTO COUPLERS NEC aEtrm oN PS2653 , PS2654 PS2653L2, PS2654L2 d ev ic e ‘ U ISOLATION i c m a t i r\ m xVOLTAGE /niT A fic LONG CREEPAGE TYPE HIGH 6 PIN PHOTO COUPLER DESCRIPTION PS2653, PS2654 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlingtonconnected photo-transistor in a plastic DIP Dual In-line Package .


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    PDF PS2653 PS2654 PS2653L2, PS2654L2 PS2653, PS2653 PS2654L2