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    TRANSISTOR NF Search Results

    TRANSISTOR NF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor SD335

    Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339
    Text: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen


    Original     		PDF Si-npn-Planar-EpitaxieSC116 Si-npn-Planar-EpitaxieSC117 Si-npn-Planar-EpitaxieSC118 Si-npn-Planar-EpitaxieSC119 Si-npn-Planar-EpitaxieSC236 Si-npn-Planar-EpitaxieSC237 Si-npn-Planar-EpitaxieSC238 VorSC239 Si-pnp-Planar-EpitaxieSC307 Si-pnp-Planar-EpitaxieSC308 transistor SD335 SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    Halbleiterbauelemente DDR

    Abstract: elektronik DDR Leistungsdiode Halbleiter-Bauelemente DDR Hallgenerator CSSR silizium diode
    Text: Tunneldiode HF-Transistor Diode Kapazitätsdiode NF-Transistor NF-Leistungstransistor Ptot >1W Bauelement 2.Element Hall-Feldsonde CSSR: Silizium Hall-Generator CSSR: Galliumarsenidphosphid HF-Leistungstransistor Hall-Generator DDR: MIS-Transistor strahlungsempfindliches


    Original     		PDF

    2SC5600

    Abstract: 2SC5737 IC 14558 IC 2801 UPA858TD-T3
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • 2 different built-in transistors (2SC5737, 2SC5600) Q1: Built-in low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA858TD 2SC5737, 2SC5600) S21e2 2SC5737 2SC5600 PA858TD-T3 2SC5600 2SC5737 IC 14558 IC 2801 UPA858TD-T3

    a406 rf npn

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA855TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5745) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA855TD 2SC5737, 2SC5745) 2SC5737 2SC5745 PA855TD1 PU10098EJ01V0DS a406 rf npn

    2SC5737

    Abstract: 2SC5745
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA855TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5745) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA855TD 2SC5737, 2SC5745) S21e2 2SC5737 2SC5745 PA855TD-T3 2SC5737 2SC5745

    2SC5436

    Abstract: 2SC5600 NEC 821
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5436, 2SC5600) Q1: Low noise transistor NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA842TC 2SC5436, 2SC5600) S21e2 2SC5436 2SC5600 2SC5436 2SC5600 NEC 821

    2SC5676

    Abstract: 2SC5737 MARKING VT
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA859TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5676) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA859TD 2SC5737, 2SC5676) S21e2 2SC5737 2SC5676 PA859TD-T3 2SC5676 2SC5737 MARKING VT

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    MMBT3906 vishay

    Abstract: No abstract text available
    Text: MMBT3906 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBT3904 is recommended. • This transistor is also available in the TO-92 case


    Original     		PDF MMBT3906 MMBT3904 2N3906. OT-23 MMBT3906-GS18 MMBT3906-GS08 D-74025 19-May-04 MMBT3906 vishay

    2SC5736

    Abstract: 2SC5737 marking VH
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA851TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5736) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA851TD 2SC5737, 2SC5736) S21e2 2SC5737 2SC5736 PA851TD-T3 2SC5736 2SC5737 marking VH

    PT 4304 a transistor

    Abstract: 2SC3587 noise diode
    Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise


    Original     		PDF 2SC3587 2SC3587 PT 4304 a transistor noise diode

    2N3904 1AM

    Abstract: MARKING 1AM 1AM marking transistor mmbt3904 vishay transistor marking 1am MMBT3904 1am TRANSISTOR marking code vishay 2N3904 SOT-23
    Text: MMBT3904 VISHAY Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP transistor MMBT3906 is recommended. • This transistor is also available in the TO-92 case


    Original     		PDF MMBT3904 MMBT3906 2N3904. OT-23 MMBT3904 MMBT3904-GS18 MMBT3904-GS08 D-74025 19-May-04 2N3904 1AM MARKING 1AM 1AM marking transistor mmbt3904 vishay transistor marking 1am MMBT3904 1am TRANSISTOR marking code vishay 2N3904 SOT-23

    2n3904 transistor

    Abstract: 2N3904, transistor 2N3904 equivalent 2N3904 SOT-23 2N3904 transistor data sheet free download 2N3904 2N3906 MMBT3904LT1 2n3906 PNP transistor DC current gain 2n3904 TRANSISTOR PNP
    Text: TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR（ NPN ） TO—92 FEATURE •NPN silicon epitaxial planar transistor for switching and Amplifier applications ·As complementary type, the PNP transistor 2N3906 is Recommended ·This transistor is also available in the SOT-23 case with


    Original     		PDF 2N3904 O--92 2N3906 OT-23 MMBT3904LT1 100KHz 100MHz 2n3904 transistor 2N3904, transistor 2N3904 equivalent 2N3904 SOT-23 2N3904 transistor data sheet free download 2N3904 MMBT3904LT1 2n3906 PNP transistor DC current gain 2n3904 TRANSISTOR PNP

    550 902

    Abstract: 2SC5433 TA 8403 A transistor 0440
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA802TC NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Built-in low phase distortion, high-gain transistor NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz


    Original     		PDF PA802TC S21e2 2SC5433) 2SC5433 PA802TC-T1 550 902 2SC5433 TA 8403 A transistor 0440

    pin configuration NPN transistor 2n3906

    Abstract: 2N3906BU 2N3906 2N3906 hie 2N3906 APPLICATION pin configuration pnp transistor 2n3906 2n3906-type transistor 2n3904
    Text: 2N3906 Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor switching and amplifier applications. • As complementary type, the NPN transistor 2N3904 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.


    Original     		PDF 2N3906 2N3904 OT-23 MMBT3906. 2N3906 2N3906-BULK 2N3906-TAP D-74025 21-Oct-04 pin configuration NPN transistor 2n3906 2N3906BU 2N3906 hie 2N3906 APPLICATION pin configuration pnp transistor 2n3906 2n3906-type transistor 2n3904

    pin configuration NPN transistor 2n3906

    Abstract: 2N3906 2n3906 PNP transistor DC current gain 2N3906 APPLICATION 2n3906 hie 2N3906BU 2N3904 2N3906-BULK 2N3906-TAP MMBT3906
    Text: 2N3906 Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor switching and amplifier applications. • As complementary type, the NPN transistor 2N3904 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.


    Original     		PDF 2N3906 2N3904 OT-23 MMBT3906. 2N3906-BULK 2N3906-TAP D-74025 14-Dec-04 pin configuration NPN transistor 2n3906 2N3906 2n3906 PNP transistor DC current gain 2N3906 APPLICATION 2n3906 hie 2N3906BU 2N3906-TAP MMBT3906

    pin configuration NPN transistor 2N3904

    Abstract: PIN CONFIGURATION OF 2N3904 2N3904 2N3904B of 2n3904 transistor 2n3904 pin out 2n3904 application 2N3904TA 2n3904 national pin configuration pnp transistor 2n3904
    Text: 2N3904 Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP transistor 2N3906 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.


    Original     		PDF 2N3904 2N3906 OT-23 MMBT3904. 2N3904 2N3904-BULK 2N3904-TAP D-74025 21-Oct-04 pin configuration NPN transistor 2N3904 PIN CONFIGURATION OF 2N3904 2N3904B of 2n3904 transistor 2n3904 pin out 2n3904 application 2N3904TA 2n3904 national pin configuration pnp transistor 2n3904

    2SC3603

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise


    OCR Scan     		PDF 2SC3603 2SC3603

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise


    OCR Scan     		PDF 2SC3603 2SC3603

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC 3587 is an NPN epitaxial transistor designed for lownoise am plification at 0.5 to 6.0 GHz. This transistor has low-noise


    OCR Scan     		PDF 2SC3587

    NEC K 2500

    Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
    Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise


    OCR Scan     		PDF 2SC3604 2SC3604 15obots NEC K 2500 N transistor NEC K 2500 2SC1223 transistor marking S00 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150

    2SC2150

    Abstract: 2SC1223 TRANSISTOR 2sC 5250 2sc3604 micro X
    Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise


    OCR Scan     		PDF 2SC3604 2SC3604 2SC3603 2SC2150 2SC1223 TRANSISTOR 2sC 5250 micro X

    transistor NEC D 586

    Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500
    Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise


    OCR Scan     		PDF 2SC3587 2SC3587 transistor NEC D 586 nec a 634 NEC D 586 NEC K 2500 NEC 3500