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    TRANSISTOR NF 37 Search Results

    TRANSISTOR NF 37 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NF 37 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor nec 8772

    Abstract: transistor BR 8772 nec 8772 transistor NEC transistor 8772 8772 nec transistor br 8772 transistor MJE 15004 transistor BR 8772 nec 8772 9622 transistor
    Text: NPN SiGe RF TRANSISTOR NESG2031M05 NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz • HIGH MAXIMUM STABLE GAIN:


    Original     		PDF NESG2031M05 OT-343 NESG2031M05 transistor nec 8772 transistor BR 8772 nec 8772 transistor NEC transistor 8772 8772 nec transistor br 8772 transistor MJE 15004 transistor BR 8772 nec 8772 9622 transistor

    TRANSISTOR C 4460

    Abstract: AT-41533 544 code marking amplifier zo 103 ma AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E
    Text: General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511 AT-41533 Features Description • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA • Characterized for 3, 5, and


    Original     		PDF AT-41511 AT-41533 AT-41511: AT-41533: OT-23 OT-143 AT-41511 OT-23, TRANSISTOR C 4460 AT-41533 544 code marking amplifier zo 103 ma AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E

    nf 820

    Abstract: AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533 AT-41533-BLK AT-41533-TR1 S21E
    Text: General Purpose, Low Noise NPN␣ Silicon Bipolar Transistor Technical Data AT-41511 AT-41533 Features Description • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA • Characterized for 3, 5, and


    Original     		PDF AT-41511 AT-41533 AT-41511: AT-41533: OT-23 OT-143 AT-41511 AT-41533 OT-23, nf 820 AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E

    transistor 3506 nec

    Abstract: 7890 NEC PIN CONNECTIONS OF IC 4047 semiconductor ic pt 2285 2SC5185 2SC5185-T1 2SC5185-T2 cb 753 u 224-1 MAG transistor 224-1 base collector emitter
    Text: DATA SHEET SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF 2SC5185 transistor 3506 nec 7890 NEC PIN CONNECTIONS OF IC 4047 semiconductor ic pt 2285 2SC5185 2SC5185-T1 2SC5185-T2 cb 753 u 224-1 MAG transistor 224-1 base collector emitter

    nec 13772

    Abstract: 2SC5182 2SC5182-T1 2SC5182-T2 NEC 9715
    Text: DATA SHEET SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF 2SC5182 2SC5182-T1 SC-59 nec 13772 2SC5182 2SC5182-T1 2SC5182-T2 NEC 9715

    transistor zo 607

    Abstract: 4044 for amplification 865 IC marking ZO 607 transistor 2SC5184 2SC5184-T1 2SC5184-T2 marking 624 sc-70 14893 transistor C 5386
    Text: DATA SHEET SILICON TRANSISTOR 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF 2SC5184 2SC5184-T2 transistor zo 607 4044 for amplification 865 IC marking ZO 607 transistor 2SC5184 2SC5184-T1 2SC5184-T2 marking 624 sc-70 14893 transistor C 5386

    NEC 2933

    Abstract: 2SC5183 2SC5183R 2SC5183R-T1 2SC5183R-T2 NEC 4559 ic 4559 transistor B 722
    Text: DATA SHEET SILICON TRANSISTOR 2SC5183R NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DRAWINGS Units: mm • Low noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF 2SC5183R NEC 2933 2SC5183 2SC5183R 2SC5183R-T1 2SC5183R-T2 NEC 4559 ic 4559 transistor B 722

    2SC5437

    Abstract: 8193
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA829TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation, low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA829TD 2SC5437) 2SC5437 PA829TD-T3 2SC5437 8193

    nec 2035 744

    Abstract: MARKING W1 2SC5618 2SC5618-T3
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5618 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • 3-pin lead-less minimold package


    Original     		PDF 2SC5618 2SC5618-T3 nec 2035 744 MARKING W1 2SC5618 2SC5618-T3

    nec 2035 744

    Abstract: 2SC5618 2SC5618-T3
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5618 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • 3-pin lead-less minimold package


    Original     		PDF 2SC5618 2SC5618-T3 nec 2035 744 2SC5618 2SC5618-T3

    IC 431

    Abstract: 2SC5277A SANYO DC 303 ITR08213 ITR08215 ITR08216 ITR08217 120d-22
    Text: 2SC5277A Ordering number : ENA1075 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz).


    Original     		PDF 2SC5277A ENA1075 S21e2 A1075-6/6 IC 431 2SC5277A SANYO DC 303 ITR08213 ITR08215 ITR08216 ITR08217 120d-22

    Untitled

    Abstract: No abstract text available
    Text: 2SC5277A Ordering number : ENA1075A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz)


    Original     		PDF 2SC5277A ENA1075A A1075-8/8

    ic 731 1624

    Abstract: 2SC5184 transistors ON 4673
    Text: DATA SHEET SILICON TRANSISTOR µPA808T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD PACKAGE DRAWINGS (Unit: mm) FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz 2.1±0.1 NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA808T PA808T-T1 ic 731 1624 2SC5184 transistors ON 4673

    transistor A431

    Abstract: A641 NPN transistor TRANSISTOR A107
    Text: DATA SHEET SILICON TRANSISTOR µPA808T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD PACKAGE DRAWINGS (Unit: mm) FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz 2.1±0.1 NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA808T PA808T-T1 transistor A431 A641 NPN transistor TRANSISTOR A107

    A1074

    Abstract: IM 383 IC 2SC5245A SANYO DC 303 ITR07984 ITR07986 ITR07987 ITR07990
    Text: 2SC5245A Ordering number : ENA1074 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). High gain


    Original     		PDF 2SC5245A ENA1074 S21e2 A1074-6/6 A1074 IM 383 IC 2SC5245A SANYO DC 303 ITR07984 ITR07986 ITR07987 ITR07990

    transistor a1275

    Abstract: a1275 transistor IC A1302
    Text: Ordering number:ENN5184A NPN Epitaxial Planar Silicon Transistor 2SC5245 UHF to S-Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz).


    Original     		PDF ENN5184A 2SC5245 11GHz 2059B 2SC5245] transistor a1275 a1275 transistor IC A1302

    marking 624 sc-70

    Abstract: transistor 3213
    Text: 2SC5245A Ordering number : ENA1074A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz) High gain


    Original     		PDF ENA1074A 2SC5245A S21e2 A1074-8/8 marking 624 sc-70 transistor 3213

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • • PACKAGE DIMENSIONS Low Noise NF = 1.3 dB ty p . @ V ce = 2 V, Ic = 3 mA, f = 2 GHz NF = 1.3 dB ty p


    OCR Scan     		PDF 2SC5185 2SC5185-T1 2SC5185-T2

    SG 2368

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise • NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB typ.


    OCR Scan     		PDF 2SC5183 SC-61 2SC5183-T1 2SC5183-T2 SG 2368

    ic CD 4047

    Abstract: NEC D 809 F transistor NEC D 586 2SC5185 2SC5185-T1 2SC5185-T2 TC-2482 7890 NEC 224-1 MAG nec 1299 662
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • • PACKAGE DIMENSIONS Low Noise NF = 1 .3 dB typ. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz NF = 1.3 dB typ.


    OCR Scan     		PDF 2SC5185 2SC5185-T1 2SC5185-T2 ic CD 4047 NEC D 809 F transistor NEC D 586 2SC5185-T2 TC-2482 7890 NEC 224-1 MAG nec 1299 662

    fe 5571

    Abstract: KS 0302
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low N oise • NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 m A, f = 2 G H z • NF = 1.3 dB


    OCR Scan     		PDF 2SC5183 SC-61 2SG5183-T1 2SC5183-T2 fe 5571 KS 0302

    nec 13772

    Abstract: transistor NEC b 882 transistor NEC D 882 p nec d 882 p transistor transistor transistor NEC b 882 p nec 0882 p 2 sem 2107 71/MT 6351 bm 71/71/MT 6351 bm
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PAC KAG E DIMENSIONS • Low noise • NF = 1.3 dB ty p . @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB ty p


    OCR Scan     		PDF 2SC5182 SC-59 2SC5182-T1 2SC5182-T2 nec 13772 transistor NEC b 882 transistor NEC D 882 p nec d 882 p transistor transistor transistor NEC b 882 p nec 0882 p 2 sem 2107 71/MT 6351 bm 71/71/MT 6351 bm

    AT41511-BLK

    Abstract: AT-41533-BLK
    Text: f » HEW LETT f t "KM PACKARD General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511, AT-41533 Features D escription • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511:1 dB NF, 15.5 dB G. AT-41533:1 dB NF,


    OCR Scan     		PDF AT-41511, AT-41533 AT-41511 AT-41533 OT-23 OT-143 OT-23, AT41511-BLK AT-41533-BLK

    transistor C 5386

    Abstract: 24 5805 054 000 829 c 4468 power transistor
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES P A C K A G E D IM E N S IO N S • Low Noise • NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB


    OCR Scan     		PDF 2SC5184 SC-70 2SG5184-T1 2SC5184-T2 transistor C 5386 24 5805 054 000 829 c 4468 power transistor