TRANSISTOR NOISE FIGURE MEASUREMENTS APPLICATION Search Results

TRANSISTOR NOISE FIGURE MEASUREMENTS APPLICATION Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR NOISE FIGURE MEASUREMENTS APPLICATION Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MRF587 Abstract: high frequency transistor Text: MRF587 The RF Line NPN Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz Designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. • • • •	Original	MRF587 500MHz MRF587 high frequency transistor	PDF
c138 transistor Abstract: OM5729 free IC 555 application note ic 555 TDA8083 SP5659 TSA5059T TDA8083H BSN20 AN99024 Text: APPLICATION NOTE Phase Noise Measurements TSA5059 versus SP5659 AN99024 Philips Semiconductors Phase Noise Measurements TSA5059 versus SP5659 Application Note AN99024 Abstract This report describes comparative measurements on phase noise behaviour between the pin and software	Original	TSA5059 SP5659 AN99024 TSA5059T SP5659 OM5729 PR39233) c138 transistor OM5729 free IC 555 application note ic 555 TDA8083 TDA8083H BSN20 AN99024	PDF
mmbt3904 motorola Abstract: 2N3904 for 2n3904 SST3904 TRANSISTOR noise figure measurements 2N3904 transistor data sheet free download 496k AN1944 FMMT3904CT SMB3904 Text: A/D and D/A CONVERSION/SAMPLING CIRCUITS Application Note 1944: Mar 21, 2003 MEASUREMENT CIRCUITS TEMPERATURE SENSORS Temperature Monitoring Using the MAX1253/54 and MAX1153/54 The MAX1253/54 and MAX1153/54 system monitors are a low cost solution for monitoring multiple temperatures in a system. This application note explains how to	Original	MAX1253/54 MAX1153/54 MAX1153/54 MAX1253/1254 MAX1153/1154 CMPT3904 MMBT3904 SST3904 mmbt3904 motorola 2N3904 for 2n3904 SST3904 TRANSISTOR noise figure measurements 2N3904 transistor data sheet free download 496k AN1944 FMMT3904CT SMB3904	PDF
PNP 2n3906 331 Abstract: 2n3906 equivalent transistor 2N4148 2n3906 331 transistor kt 925 NPn 2n3906 331 capacitor 476 10k 935 ltc3880 LTspice npn equivalent of 2n3906 transistor Text: Application Note 137 May 2012 Accurate Temperature Sensing with an External P-N Junction Michael Jones Introduction Temperature Sensing Theory Many Linear Technology devices use an external PNP transistor to sense temperature. Common examples are LTC3880, LTC3883 and LTC2974. Accurate temperature	Original	LTC3880, LTC3883 LTC2974. an137f AN137-12 PNP 2n3906 331 2n3906 equivalent transistor 2N4148 2n3906 331 transistor kt 925 NPn 2n3906 331 capacitor 476 10k 935 ltc3880 LTspice npn equivalent of 2n3906 transistor	PDF
BFG425 Abstract: BFG425W BFG410W TRANSISTOR noise figure measurements 2 GHz LNA RNR-T45-96-B-773 Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-773 : T. Buss : 14-Nov-1996 : P.G. Transistors & Diodes, Development 2GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly	Original	RNR-T45-96-B-773 14-Nov-1996 BFG425W BFG425W BFG400W 100KHz BFG425 BFG410W TRANSISTOR noise figure measurements 2 GHz LNA RNR-T45-96-B-773	PDF
lm317 smd L3 Abstract: LM317 voltage regulator BSN20 IC1 LM317 r60 mkt TDA8060 SP5659 c138 transistor 68c46 MKT 22K Text: APPLICATION NOTE Measurements on TSA5059T/C1 and SP5659 regarding ripple voltage susceptibility AN99019 Philips Semiconductors Measurements on TSA5059T/C1 and SP5659 regarding ripple voltage susceptibility Application Note AN99019 Abstract This document describes the measurement results of susceptibility on ripple voltage injected on a DC supply	Original	TSA5059T/C1 SP5659 AN99019 TSA5059T/C1 SP5659 PR39232 lm317 smd L3 LM317 voltage regulator BSN20 IC1 LM317 r60 mkt TDA8060 c138 transistor 68c46 MKT 22K	PDF
germanium transistors PNP Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR Text: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,	Original	IBM43RF0100 IBM43RF0100EV 823Vdc. germanium transistors PNP SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR	PDF
Understanding Ratiometric Conversions Abstract: pt100 sensor interface WITH ADC PT100 bridge adc SBAA110 pt100 interface WITH ADC FS1665 maxim pt100 interface PT100 bridge example slyt010b PT100 thermistor Text: Application Report SBAA110 – March 2004 Understanding Ratiometric Conversions Russell Anderson Data Acquisition Group ABSTRACT The primary factor that establishes the accuracy in most measurement systems is the reference. Ratiometric measurements change the reference from being a voltage or	Original	SBAA110 Understanding Ratiometric Conversions pt100 sensor interface WITH ADC PT100 bridge adc SBAA110 pt100 interface WITH ADC FS1665 maxim pt100 interface PT100 bridge example slyt010b PT100 thermistor	PDF
TRANSISTOR 3kw Abstract: C4131 TRANSISTOR 3kw 11 2N2920DCSM small signal transistor S4 C3 5V 3kw transistor Text: 2N2920DCSM–QR–B DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 3 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A= 4.32 ± 0.13 (0.170 ± 0.005)	Original	2N2920DCSM TRANSISTOR 3kw C4131 TRANSISTOR 3kw 11 small signal transistor S4 C3 5V 3kw transistor	PDF
RF Transistor s-parameter Abstract: AN-60-040 8971C TRANSISTOR SAV 17 padmanabha SAV-581 RF transistors with s-parameters noise source diode kelvin 1102 NF50 Text: UNDERSTANDING NOISE PARAMETER MEASUREMENTS AN-60-040 Overview This application note reviews noise theory & measurements and S-parameter measurements used to characterize transistors and amplifiers at Modelithics, Inc. Definitions and Theory The formulations in this note were derived from multiple sources, including References [1-3].	Original	AN-60-040) 10log AN-60-040 M123981 AN60040 RF Transistor s-parameter 8971C TRANSISTOR SAV 17 padmanabha SAV-581 RF transistors with s-parameters noise source diode kelvin 1102 NF50	PDF
transistor on 4436 Abstract: c 4977 transistor Text: CHA2095a 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT	Original	CHA2095a 36-40GHz CHA2095a DSCHA20958147 transistor on 4436 c 4977 transistor	PDF
c 4977 transistor Abstract: No abstract text available Text: CHA2095a 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT	Original	CHA2095a 36-40GHz CHA2095a DSCHA20958147 c 4977 transistor	PDF
c 4977 transistor Abstract: transistor on 4436 Text: CHA2095a RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.	Original	CHA2095a 36-40GHz CHA2095a DSCHA20958147 c 4977 transistor transistor on 4436	PDF
SKY65084-360LF Abstract: N4001A N9020A S1500 S1577 VT47 MURATA GJM VT-47 transistor C3 Text: DATA SHEET SKY65084-360LF: 1.5-2.4 GHz Low Noise Amplifier Applications InterStage Match x Wireless infrastructure: GSM, CDMA, WCDMA, and TD-SCDMA x Ultra low-noise applications Features Figure 1. SKY65084-360LF Block Diagram x Ultra-low Noise Figure = 0.70 dB @ 1.95 GHz	Original	SKY65084-360LF: SKY65084-360LF J-STD-020) 201107C N4001A N9020A S1500 S1577 VT47 MURATA GJM VT-47 transistor C3	PDF

murata REEL label Abstract: MXA agilent s1413 amplifier diagram N4001A N9020A S1500 S1577 VT47 S14-1 Text: DATA SHEET SKY65084-360LF: 1.5-2.4 GHz Low Noise Amplifier Applications InterStage Match • Wireless infrastructure: GSM, CDMA, WCDMA, and TD-SCDMA  Ultra low-noise applications Features Figure 1. SKY65084-360LF Block Diagram  Ultra-low Noise Figure = 0.70 dB @ 1.95 GHz	Original	SKY65084-360LF: SKY65084-360LF J-STD-020) 201107E murata REEL label MXA agilent s1413 amplifier diagram N4001A N9020A S1500 S1577 VT47 S14-1	PDF
transistor C3 Abstract: SKY65084-360LF Text: DATA SHEET SKY65084-360LF: 1.5-2.4 GHz Low Noise Amplifier Applications InterStage Match • Wireless infrastructure: GSM, CDMA, WCDMA, and TD-SCDMA • Ultra low-noise applications Features Figure 1. SKY65084-360LF Block Diagram • Ultra-low Noise Figure = 0.70 dB @ 1.95 GHz	Original	SKY65084-360LF: J-STD-020) SKY65084-360LF 01107A transistor C3	PDF
Untitled Abstract: No abstract text available Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-375 : T. Buss : 20 May 1997 : P.G. Transistors & Diodes, Development 2GHz BUFFER-AMPLIFIER WITH THE BFG410W Abstract: This application note contains an example of a Buffer-Amplifier with the new BFG410W Double Poly RFtransistor. The buffer is designed for a frequency f=2GHz. Performance at f=2GHz: Isolation S12~-31dB,	Original	RNR-T45-97-B-375 BFG410W BFG410W -31dB,	PDF
pnp phototransistor Abstract: transistor Comparison Tables AN3009 transistor 9427 314 optocoupler Common collector configuration basic Transistor 2N4402 digital optocoupler 4pin isolation NPN/transistor NEC K 2500 PS2501-1-A Text: A p p l i c at i o n N o t e AN3009 Phototransistor Switching Time Analysis Authors: Van N. Tran Staff Application Engineer, CEL Opto Semiconductors Robert Stuart, CEL Product Marketing Manager Hardik Bhavsar, San Jose State University Introduction A standard optocoupler provides signal transfer between	Original	AN3009 pnp phototransistor transistor Comparison Tables AN3009 transistor 9427 314 optocoupler Common collector configuration basic Transistor 2N4402 digital optocoupler 4pin isolation NPN/transistor NEC K 2500 PS2501-1-A	PDF
SMA Connector Spice Abstract: AN-738 deutsch 6 pin connector model Text: National Semiconductor Application Note 738 Stephen Kempainen January 1991 The Futurebus+ backplane is a complex electrical environment that consists of many circuit elements. The modeling of such an environment can become time consuming and expensive. The Futurebus+ Electrical Task Group Expert Team	Original		PDF
Untitled Abstract: No abstract text available Text: UNDERSTANDING NOISE PARAMETER MEASUREMENTS AN-60-040 Overview This application note reviews noise theory & measurements and S-parameter measurements used to characterize transistors and amplifiers at Modelithics, Inc. Definitions and Theory The formulations in this note were derived from multiple sources, including References [1-3].	Original	AN-60-040) 10log AN-60-040 M150261 AN60040	PDF
SKY65052-372LF Abstract: S1509 VT47 GRM015 S1408 S1511 S1417 GRM01 Text: PRELIMINARY DATA SHEET SKY65052-372LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations • Test instrumentation • LNA for GPS receivers • Satellite receivers Figure 1. SKY65052-372LF Block Diagram	Original	SKY65052-372LF: SKY65052-372LF 01088A S1509 VT47 GRM015 S1408 S1511 S1417 GRM01	PDF
mj15052 Abstract: mj-15052 CFL UPS 45 W circuit schematic diagram MJ15052 Motorola schematic diagram UPS ica MJ15003 internal diagram power supply tester schematic diagram pulse generator MC14001 AT330 transistor MJ11032 Text: O AN930 MOTOROLA Semiconductor Products Inc. Application Note HIGH VOLTAGE, HIGH CURRENT, NONDESTRUCTIVE FBSOA TESTING By Al Pshaenich This Application Note provides specifications form test instrumeAt whichcan be used to perform non-destructive testing of	Original	AN930 AN930/D hull111111 mj15052 mj-15052 CFL UPS 45 W circuit schematic diagram MJ15052 Motorola schematic diagram UPS ica MJ15003 internal diagram power supply tester schematic diagram pulse generator MC14001 AT330 transistor MJ11032	PDF
CR10-101J-T Abstract: colpitts oscillator using 741 Colpitts VCO design APN1010 varactor diode for Colpitts oscillator kyocera sot 23-5 Tuner Applications APN1006 meander-line VCO circuit diagram 1.2 ghz tuner Text: Application Note A VCO Design for WLAN Applications in the 2.4–2.5 GHz ISM Band APN1010 Introduction The increased demand for mobile network connections has lead to the establishment of RF interface standards for Wireless Local Area Networks WLANs . The	Original	APN1010 11-bit APN1007, APN1012, APN1013, APN1015, APN1016, 4/00A CR10-101J-T colpitts oscillator using 741 Colpitts VCO design APN1010 varactor diode for Colpitts oscillator kyocera sot 23-5 Tuner Applications APN1006 meander-line VCO circuit diagram 1.2 ghz tuner	PDF
FAST applications Handbook Abstract: AN-738 742000 SMA Connector Spice Text: National Semiconductor Application Note 738 Stephen Kempainen January 1991 The Futurebus+ backplane is a complex electrical environment that consists of many circuit elements. The modeling of such an environment can become time consuming and expensive. The Futurebus+ Electrical Task Group Expert Team	Original	an011107 FAST applications Handbook AN-738 742000 SMA Connector Spice	PDF

TRANSISTOR NOISE FIGURE MEASUREMENTS APPLICATION Search Results

TRANSISTOR NOISE FIGURE MEASUREMENTS APPLICATION Result Highlights (5)

TRANSISTOR NOISE FIGURE MEASUREMENTS APPLICATION Datasheets Context Search

MRF587

c138 transistor

mmbt3904 motorola

PNP 2n3906 331

BFG425

lm317 smd L3

germanium transistors PNP

Understanding Ratiometric Conversions

TRANSISTOR 3kw

RF Transistor s-parameter

transistor on 4436

c 4977 transistor

c 4977 transistor

SKY65084-360LF

murata REEL label

transistor C3

Untitled

pnp phototransistor

SMA Connector Spice

Untitled

SKY65052-372LF

mj15052

CR10-101J-T

FAST applications Handbook