BUV25
Abstract: transistor Vbe 1 vce 500v NPN Transistor npn high voltage transistor 500v 8a NPN Transistor 8A low vce 16a
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV25 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = 0.6V (Max.)@IC= 6A ·High Power Dissipation ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 500V (Min.) APPLICATIONS
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BUV25
10MHz
BUV25
transistor Vbe 1
vce 500v NPN Transistor
npn high voltage transistor 500v 8a
NPN Transistor 8A
low vce 16a
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2N5014
Abstract: 2N5015 2N5010 2N5011 2N5012 2N5013 npn ic 25mA
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES 2N5010 2N5011 2N5012 LEVELS 2N5013 2N5014 2N5015
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MIL-PRF-19500/727
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
2N5010S
2N5011S
2N5012S
2N5014
2N5015
2N5010
2N5011
2N5012
2N5013
npn ic 25mA
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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Untitled
Abstract: No abstract text available
Text: KSC5039F KSC5039F High Voltage Power Switch Switching Application TO-220F 1 1.Base 2.Collector 3.Emitter NPN Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 800 Units V 400
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KSC5039F
O-220F
O-220F
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TIP47
Abstract: TIP50 TIP47 POWER OF TRANSISTOR tip47
Text: TIP47, 50 High Voltage Power Trasnsitors High Voltage NPN Silicon Power Transistors are designed for line operated audio output amplifier, and switching power supply drivers applications. Features: • Collector-Emitter sustaining voltage- 250 - 400V Minimum .
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TIP47,
10MHz
200mA.
TIP50s
TIP47
TIP50
TIP47 POWER
OF TRANSISTOR tip47
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2SC5018
Abstract: No abstract text available
Text: Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.8 High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.2 ● 1.45 1.0 1.0 ● 4.0
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2SC5018
2SC5018
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tf 115 250v 2a
Abstract: BUL53B
Text: BUL53BSM SEME LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA 11.5 2.0 0.25 3.5 1 3.0 3 FAST SWITCHING tf = 100ns 9.0 1.5 15.8 4.6 3.5 2 HIGH ENERGY RATING FEATURES 8.5 TO220 Ceramic Surface Mount Package
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BUL53BSM
100ns)
100mA
10MHz
tf 115 250v 2a
BUL53B
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Untitled
Abstract: No abstract text available
Text: ^£.m.L-donaactoi Lproducti., Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUX25 NPN SILICON POWER TRANSISTOR 25.15(0.99] 26.67(1,05) 1067 (0.42) 11.18(0.44} 1,52(006) 343(0135) FEATURES
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BUX25
O-204AE
10MHz
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2N5013
Abstract: 2N5010 2N5011 2N5012 2N5014 2N5015 transistor npn 10mhz 500v
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES 2N5010 2N5011 2N5012 LEVELS 2N5013 2N5014 2N5015
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MIL-PRF-19500/727
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
2N5010S
2N5011S
2N5012S
2N5013
2N5010
2N5011
2N5012
2N5014
2N5015
transistor npn 10mhz 500v
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Untitled
Abstract: No abstract text available
Text: BDY28C MECHANICAL DATA Dimensions in mm HIGH CURRENT NPN SILICON TRANSISTOR FEATURES 25.15 0.99 26.67 (1.05) • HIGH SWITCHING CURRENTS • HIGH RELIABILITY • CECC SCREENING OPTIONS 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
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BDY28C
O-204AA)
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BUL54A
Abstract: NPN Transistor VCEO 1000V
Text: SEME BUL54A–SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 11.5 0.25 3.5 1 3 3.0 9.0 1.5 15.8 4.6 2.0 3.5 2 8.5 FEATURES TO220 Ceramic Surface Mount Package Pad 1 – Base Pad 2 – Collector
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BUL54A
500mA
100mA
10MHz
NPN Transistor VCEO 1000V
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npn high voltage transistor 500v 8a
Abstract: BUX25 npn silicon 500v 400v 7v 10mhz transistor npn silicon 500v 400v 7v 10mhz NPN 350W
Text: BUX25 MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)
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BUX25
204AE
npn high voltage transistor 500v 8a
BUX25
npn silicon 500v 400v 7v 10mhz
transistor npn silicon 500v 400v 7v 10mhz
NPN 350W
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Untitled
Abstract: No abstract text available
Text: KSC5039 KSC5039 High Voltage Power Switch Switching Application TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 800 Units V 400 V VCEO
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KSC5039
O-220
O-220
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Untitled
Abstract: No abstract text available
Text: BUX25 MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)
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BUX25
204AE
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Untitled
Abstract: No abstract text available
Text: BUL53BSMD ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 4 .1 4 0 .1 6 3 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 )
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BUL53BSMD
100ns)
100mA
300ms
10MHz
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Untitled
Abstract: No abstract text available
Text: BUL54ASMD ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 3 .6 0 0 .1 4 2 M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 )
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BUL54ASMD
100mA
10MHz
300ms
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BUL54ASMD
Abstract: NPN Transistor VCEO 1000V
Text: BUL54ASMD ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 3 .6 0 0 .1 4 2 M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 )
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BUL54ASMD
100mA
10MHz
300ms
BUL54ASMD
NPN Transistor VCEO 1000V
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Untitled
Abstract: No abstract text available
Text: Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit: mm 6.9±0.1 4.0 • Features High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.65 max. 14.5±0.5 ● 1.0 ● (0.5) (1.0)
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2SC5018
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10mhz mosfet
Abstract: an7244 conventional bipolar
Text: Harris Semiconductor No. AN7244.2 Harris Power MOSFETs September 1993 Understanding Power MOSFETs Author: Tom McNulty Power MOSFETs Metal Oxide Semiconductor, Field Effect Transistors differ from bipolar transistors in operating principles, specifications, and performance. In fact, the
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AN7244
10MHz.
10mhz mosfet
conventional bipolar
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an7244
Abstract: understanding power mosfet intersil
Text: Understanding Power MOSFETs Application Note Introduction Power MOSFETs Metal Oxide Semiconductor, Field Effect Transistors differ from bipolar transistors in operating principles, specifications, and performance. In fact, the performance characteristics of MOSFETs are generally superior to those of bipolar transistors: significantly faster switching
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NPN Transistor 15A 400V to3
Abstract: 2N6563 350V transistor npn 15a 2N6547 2N6561 JAN2N6546 SDT13301-SDTI3305 transistor 500v 0.5a transistor npn 10mhz 500v S65C
Text: ^/òlitron [^ ©tSDCT ©ÄTTÄIL Devices. Inc. VERY HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available
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305mm)
JAN2N6546,
2N6547.
2N6561,
2N6563,
SDT13301-SDTI3305
NPN Transistor 15A 400V to3
2N6563
350V transistor npn 15a
2N6547
2N6561
JAN2N6546
transistor 500v 0.5a
transistor npn 10mhz 500v
S65C
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Untitled
Abstract: No abstract text available
Text: .7*113237 0026=137 3 W Ê Fi I '33>~iS S C S - T H O M S O N [M û œ a J tm M M S S G S-TH0MS0N BUX 25 3GE D NPN SILICON TRANSISTOR • HIGH SPEED, HIGH VOLTAGE, HIGH POWER TRANSISTOR ■ SWITCHING AND AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Sym bol
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T-33-15
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LAB 250 LB
Abstract: No abstract text available
Text: Illl = & = Illl SEME BUL53B-SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA • CERAMIC SURFACE MOUNT PACKAGE :- ► , • FULL MIL/AEROSPACE TEMPERATURE RANGE 2.0 3.5 < ► 4— * 9'f <-
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BUL53B-SM
100ns)
T0220
100mA
100mA
10MHz
LAB 250 LB
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PDF
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Untitled
Abstract: No abstract text available
Text: lili = & = m i S E M E BUL54A-SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm •SEMEFAB DESIGNED AND DIFFUSED DIE *— _2.0 3.5 r ^ * ►n .o*— ! - 111 •HIGH VOLTAGE 0.25 3.5
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BUL54A-SM
T0220
100mA
10MHz
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PDF
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