IC 630
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •
|
Original
|
ZXTC6717MC
100mV
-140mV
DS31926
IC 630
|
PDF
|
IC 630
Abstract: marking DA1
Text: A Product Line of Diodes Incorporated ZXTC6717MC COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A • RSAT = 45mΩ for a low equivalent On-Resistance
|
Original
|
ZXTC6717MC
100mV
-140mV
DS31926
IC 630
marking DA1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTD6717E6 ADVANCE INFORMATION COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTORS IN SOT26 Features & Benefits Mechanical Data NPN Transistor • BVCEO > 15V • IC = 1.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A
|
Original
|
ZXTD6717E6
100mV
-140mV
AEC-Q10knowledge
DS33653
|
PDF
|
LTC1172
Abstract: CTX110092 12v DC SERVO MOTOR CONTROL circuit 2A h bridge irf840 inverter transistor npn 12V 1A Collector Current Zetex AN12 FMMT618 push pull converter 70V motor controller IRF830 inverter irf840
Text: Application Note 12 Issue 2 January 1996 The FMMT718 Range, Features and Applications Replacing SOT89, SOT223 and D-Pak Products with High Current SOT23 Bipolar Transistors. David Bradbury Neil Chadderton Designers of surface mount products wishing to drive loads with currents
|
Original
|
FMMT718
OT223
FMMT618/718
FMMT618
FMMT619
BCP56
FMMT619s,
LTC1172
CTX110092
12v DC SERVO MOTOR CONTROL circuit 2A
h bridge irf840 inverter
transistor npn 12V 1A Collector Current
Zetex AN12
push pull converter 70V
motor controller IRF830
inverter irf840
|
PDF
|
RF POWER TRANSISTOR NPN 2sc2078
Abstract: 2SC2078 2sc2078 Transistor 27mhz rf ic 27mhz rf amplifier 2sc2078 amplifier RF POWER TRANSISTOR NPN 27mhz rf amplifier NPN transistor 2sc2078 datasheet 27mhz transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2078 DESCRIPTION •Collector-Emitter Voltage:VCER= 75V Min ;RBE=150Ω ·Collector Current:IC=3A APPLICATIONS ·27MHz RF Power Amplifier Applications n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
|
Original
|
2SC2078
27MHz
500mA
500mA;
27MHz
RF POWER TRANSISTOR NPN 2sc2078
2SC2078
2sc2078 Transistor
27mhz rf ic
27mhz rf amplifier
2sc2078 amplifier
RF POWER TRANSISTOR NPN
27mhz rf amplifier NPN transistor
2sc2078 datasheet
27mhz transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MN2510 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN TRANSISTOR DESCRIPTION The UTC MN2510 is an NPN transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc.
|
Original
|
MN2510
MN2510
MN2510L-x-T3P-T
MN2510G-x-T3P-T
QW-R214-020
|
PDF
|
BUX99
Abstract: 250V transistor npn 2a 300V switching transistor 300V transistor npn 2a NPN Transistor 1A 400V
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX99 DESCRIPTION •High Collector Current-IC= 1.5A ·High Collector-Emitter Sustaining Voltage: VCEO SUS = 300V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in fast switching applications
|
Original
|
BUX99
-40mA
BUX99
250V transistor npn 2a
300V switching transistor
300V transistor npn 2a
NPN Transistor 1A 400V
|
PDF
|
2sc3852
Abstract: transistor 2sc3852 Solenoid Driver 2a transistor 12v 1A NPN dc 12v motor driver ic 60V transistor npn 2a switching applications 60V transistor npn 2a
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3852 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 60V(Min) ·DC Current Gain: hFE= 200(Min)@ IC= 0.5A APPLICATIONS ·Driver for solenoid and motor, series regulator and
|
Original
|
2SC3852
-30mA;
2sc3852
transistor 2sc3852
Solenoid Driver 2a
transistor 12v 1A NPN
dc 12v motor driver ic
60V transistor npn 2a switching applications
60V transistor npn 2a
|
PDF
|
C3679 equivalent
Abstract: transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220
Text: POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 July,2001 C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies.
|
Original
|
T01EE0
H1-T01EE0-0107020SB
C3679 equivalent
transistor c3835
a1695 power transistor
SK C4020
b1686
sk c4467
c4381
SK C5071
transistor c3856 npn
C4020 TO220
|
PDF
|
2SC4381
Abstract: 2SA1667
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4381 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 150V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) ·Complement to Type 2SA1667 APPLICATIONS
|
Original
|
2SC4381
2SA1667
2SC4381
2SA1667
|
PDF
|
2SC4382
Abstract: equivalent for 2sa1668 2SA1668 transistor 2sC4382
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4382 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 200V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) ·Complement to Type 2SA1668 APPLICATIONS
|
Original
|
2SC4382
2SA1668
2SC4382
equivalent for 2sa1668
2SA1668
transistor 2sC4382
|
PDF
|
ELECTRONIC BALLAST 12v
Abstract: FJP5304D TRANSISTOR hFE-100
Text: FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for Electronic Ballast Application Small Variance in Storage Time
|
Original
|
FJP5304D
O-220
FJP5304D
ELECTRONIC BALLAST 12v
TRANSISTOR hFE-100
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for ElectronicBallast Application Small Variance in Storage Time
|
Original
|
FJP5304D
O-220
FJP5304D
|
PDF
|
d2494
Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in
|
Original
|
n6to4467
2SD211to214
2SC4468
2SC1828
2SC3832
2SA768to769
2SA1262
2SA770to771
2SA1725
2SA957to958
d2494
c4381
B1625 equivalent transistor
a1668 transistor
a1695 power transistor
D2495
c3852a
D1796 power transistor
c5287
D2493
|
PDF
|
|
|
NTE13
Abstract: No abstract text available
Text: NTE13 Silicon NPN Transistor Low Voltage Output Amp Features: D Low Collector–Emitter Saturation Voltage D High DC Current Gain D An M Type Mold package that Allows Downsizing of Equipment and Automatic Insertion by Taping and Magazine Packaging Absolute Maximum Ratings:
|
Original
|
NTE13
500mA,
NTE13
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DN200 Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.2V Typ. @IC/IB=1A/50mA) • Suitable for low voltage large current drivers • Complementary pair with DP200 • Switching Application
|
Original
|
DN200
A/50mA)
DP200
DN200
KST-9085-001
100mA
|
PDF
|
DN200
Abstract: DP200
Text: DN200 Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.3V Typ. @IC /IB =1A/50mA) • Suitable for low voltage large current drivers • Complementary pair with DP200 • Switching Application
|
Original
|
DN200
A/50mA)
DP200
KST-9085-000
100mA
DN200
DP200
|
PDF
|
DN200P
Abstract: DP200P marking N04
Text: 000000000 DN200P Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.3V Typ. @IC /IB =1A/50mA) • Suitable for low voltage large current drivers • Complementary pair with DP200P • Switching Application
|
Original
|
DN200P
A/50mA)
DP200P
OT-223
KST-7004-000
100mA
-50mA
DN200P
DP200P
marking N04
|
PDF
|
DN200F
Abstract: DP200F
Text: DN200F Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.3V Typ. @IC /IB =1A/50mA) • Suitable for low voltage large current drivers • Complementary pair with DP200F • Switching Application
|
Original
|
DN200F
A/50mA)
DP200F
OT-89
KST-2125-000
100mA
DN200F
DP200F
|
PDF
|
ZVN4306A TO-5
Abstract: ZTX618 power supply IRF830 APPLICATION mosfet driver with npn transistor high gain PNP POWER TRANSISTOR SOT23 npn high voltage transistor 500v sot23 zvn4306 AN18 irf830 datasheet pnp 500v
Text: Application Note 18 Issue 1 March 1996 Power MOSFET Gate Driver Circuits using High Current Super-β Transistors 6A Pulse Rated SOT23 Transistors for High Frequency MOSFET Interfacing Neil Chadderton The pow er M OS F ET is c omm only presented and regarded as a voltage
|
Original
|
100mA/div.
50ns/div.
x15mm
FMMT618/718
700mW.
500mA/div.
100ns/div.
ZVN4306A TO-5
ZTX618
power supply IRF830 APPLICATION
mosfet driver with npn transistor
high gain PNP POWER TRANSISTOR SOT23
npn high voltage transistor 500v sot23
zvn4306
AN18
irf830 datasheet
pnp 500v
|
PDF
|
U2T405
Abstract: t605 U2T305
Text: U2T301 U2T305 POWER DARLINGTONS U2T401 U2T405 5 Amp, 150V, Planar NPN FEATURES DESCRIPTION • • • • • Unitrode NPN Darlingtons consist of a two transistor circuit on a single monolithic planar chip. High Current Gain: 1000 min. @ lc = 2A Low Saturation Voltage: as low as 1.5V max. @ lc = 2A
|
OCR Scan
|
U2T301
U2T305
U2T401
U2T405
U2T305
U2T301
U2T401
U2T405
t605
|
PDF
|
UZT301
Abstract: U2T405 U2T305 R82E U2t301 U2T401 60V transistor npn 2a
Text: U2T301 U2T305 POWER DARLINGTONS U2T401 U2T405 5 Amp, 150V, Planar NPN o FEATURES • • • • • High Current Gain: 1000 min. @ lc = 2A Low Saturation Voltage: as low as 1.5V max. @ lc = 2A High Voltage: up to 150V min. VCER Monolithic Design Incorporating Multiple-Emitter Techniques
|
OCR Scan
|
U2T301
U2T401
U2T305
U2T405
U2T301
U2T401
UZT301,
U2T305,
U2T401,
UZT301
U2T405
R82E
60V transistor npn 2a
|
PDF
|
"Dual PNP Transistor" temperature compensation
Abstract: No abstract text available
Text: u n e A ß _ TECHNOLOGY M icro p o w e r R egulator a n d C o m p a ra to r F€ßTUR€S DCSCRIPTIOn • 40pA Supply Current ■ 125mA Output Current ■ 2.5V Reference Voltage ■ Reference Output Sources 1mA and Sinks 0.5mA
|
OCR Scan
|
LT1020
125mA
125mA.
14-Lead
16-Lead
"Dual PNP Transistor" temperature compensation
|
PDF
|
LTC1108
Abstract: ALT1108 Step-up 12V to 36V 300mA transistor ztx ztx 949
Text: LT1108 u r m TECHNOLOGY M ic ro p o w e r D C /D C C o n v e rte r A d ju s ta b le a n d Fixed 5V, 12V FCRTURCS DCSCRIPTIOn • Operates at Supply Voltages from 2V to 30V ■ Consumes Only 11 OjaA Supply Current ■ Works in Step-Up or Step-Down Mode ■ Only Four External Components Required
|
OCR Scan
|
LT1108
LT1108
LT1108functions
LT1173,
150mA
300mAfrom
110jaA,
LTC1108
ALT1108
Step-up 12V to 36V 300mA
transistor ztx
ztx 949
|
PDF
|
