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    TRANSISTOR NPN 2A SOT 23 Search Results

    TRANSISTOR NPN 2A SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NPN 2A SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMBT3904 jiangsu

    Abstract: MMBT3904 MMBT3906 MMBT3906 SOT-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 SOT–23 TRANSISTOR PNP FEATURES z Complementary Type The NPN Transistor MMBT3904 is Recommended z Epitaxial Planar Die Construction MARKING: 2A 1. BASE 2. EMITTER


    Original     		PDF OT-23 MMBT3906 MMBT3904 MMBT3904 jiangsu MMBT3906 MMBT3906 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR PNP SOT-23 FEATURES z As complementary type the NPN transistor MMBT3904 is recommended z Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER


    Original     		PDF OT-23 MMBT3906 OT-23 MMBT3904 -10mA -50mA -100mA -50mA, -10mA

    Marking 2A

    Abstract: 2a transistor sot 23 MMBT3906 SOT-23 SOT-23 2A 2A marking MMBT3906 transistor SOT23 2A MMBT3906 sot-23 2A transistor 2A MARKING SOT23
    Text: MMBT3906 SOT-23 Transistor PNP 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features — As complementary type, the NPN transistor MMBT3904 is Recommended — Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF MMBT3906 OT-23 OT-23 MMBT3904 -10mA -50mA -100mA -50mA, -10mA, 100MHz Marking 2A 2a transistor sot 23 MMBT3906 SOT-23 SOT-23 2A 2A marking MMBT3906 transistor SOT23 2A MMBT3906 sot-23 2A transistor 2A MARKING SOT23

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter


    Original     		PDF OT-23 MMBT3906LT1 MMBT3904LT1 -10mA -50mA 100MHz -10mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		PDF OT-23 MMBT3906LT1 MMBT3904LT1 -10mA -50mA 100MHz -10mA

    MMBT8050

    Abstract: MMBT8050 BR mmbt8050 sot-23
    Text: MMBT8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. SOT-23 Plastic Package


    Original     		PDF MMBT8050 OT-23 MMBT8050 MMBT8050 BR mmbt8050 sot-23

    MARKING 2A

    Abstract: MMBT3906 MMBT3904
    Text: MMBT3906 Pb RoHS 0.3 Watts PNP Plastic-Encapsulate Transistors COMPLIANCE SOT-23 Features — As complementary type, the NPN transistor MMBT3904 is recommended — Epitaxial planar die construction — Marking: 2A Dimensions in inches and millimeters Maximum Ratings


    Original     		PDF MMBT3906 OT-23 MMBT3904 -10uA, -50mA, -10mA 100MHz -10mA MARKING 2A MMBT3906

    FSB560

    Abstract: FSB560A
    Text: FSB560/FSB560A July 1998 FSB560 / FSB560A C E B TM SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol


    Original     		PDF FSB560/FSB560A FSB560 FSB560A OT-23) FSB560A

    Untitled

    Abstract: No abstract text available
    Text: BCP1766 2A, 40V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-89 The BCP1766 is suited for the output stage of 0.5W audio, voltage regulator, and relay driver.


    Original     		PDF BCP1766 OT-89 BCP1766 BCP1766-P BCP1766-Q BCP1766-R 100MHz 23-Jul-2013

    FSB560

    Abstract: FSB560A
    Text: FSB560/FSB560A FSB560 / FSB560A C E B TM SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF FSB560/FSB560A FSB560 FSB560A OT-23) FSB560A

    SSOT-3

    Abstract: CBVK741B019 F63TNR FSB560 FSB560A MMSZ5221B SuperSOTTM -3
    Text: FSB560/FSB560A FSB560 / FSB560A C E B TM SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF FSB560/FSB560A FSB560 FSB560A OT-23) SSOT-3 CBVK741B019 F63TNR FSB560A MMSZ5221B SuperSOTTM -3

    smd transistor MARKING 2A

    Abstract: No abstract text available
    Text: Transistors SMD Type NPN Silicon Power Switching Transistor FMMT619 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Collector current:IC=2A 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 ● power dissipation :PC=625mw 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1


    Original     		PDF FMMT619 OT-23 625mw 200mA 100MHz smd transistor MARKING 2A

    .0118 to92

    Abstract: TSB772S TSD882S TSD882SCT TSD882SCY oc sot89
    Text: TSD882S Low Vce sat NPN Transistor Pin assignment: TO-92 1. Emitter 2. Collector 3. Base BVCEO = 50V Ic = 3A VCE (SAT), = 0.3V(typ.) @Ic / Ib = 2A / 20mA SOT-89 1. Base 2. Collector 3. Emitter Features — Ordering Information Low VCE (SAT). Part No. — Excellent DC current gain characteristics


    Original     		PDF TSD882S OT-89 TSD882SCT TSD882SCY TSB772S .0118 to92 TSB772S TSD882S TSD882SCT TSD882SCY oc sot89

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT449 TRANSISTOR NPN SOT–23 FEATURES  Low Equivalent On-Resistance MARKING: 449 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value


    Original     		PDF OT-23 FMMT449 500mA 100mA 200mA 100MHz

    smd transistor g1

    Abstract: g1 smd transistor smd transistor 3K resistor smd 103 D4001BC OPTOCOUPLER SMPS smd transistor S1 SMD resistors 2012 Zener diode 18V SOD80 transistor SMD 104
    Text: www.fairchildsemi.com FEB219-001 User’s Guide FPP06R001 Evaluation Board Featured Fairchild Product: FPP06R001 www.fairchildsemi.com/FEBsupport 2008 Fairchild Semiconductor Corporation 1 FEBxxx_ FPP06R001 • Rev. 0.0.1 www.fairchildsemi.com Table of Contents


    Original     		PDF FEB219-001 FPP06R001 smd transistor g1 g1 smd transistor smd transistor 3K resistor smd 103 D4001BC OPTOCOUPLER SMPS smd transistor S1 SMD resistors 2012 Zener diode 18V SOD80 transistor SMD 104

    shottkey diodes

    Abstract: No abstract text available
    Text: BACK Final Impala Linear Corporation June 1996 ILC6390/1 SOT-89 Step-Up PFM Switcher with Auto-Load Sense General Description Features 50 mA boost converter using Pulse Frequency Modulation, or PFM, technique, in 5-lead SOT-89 or a 5lead SOT-23 package. Only 3 external components


    Original     		PDF ILC6390/1 OT-89 OT-23 ILC6390 155kHz; 100kHz ILC6391CP-30 CD105) shottkey diodes

    Untitled

    Abstract: No abstract text available
    Text: SEM ICONDUCTO R tm July 1998 FMMT560 / FMMT560A B SuperS0T -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol


    OCR Scan     		PDF FMMT560 FMMT560A OT-23) FMMT560/FMMT560A FMMT560 100MHz

    FMMT560

    Abstract: FMMT560A MT560 MT560A
    Text: Ml C O N D U C T O R tm July 1998 FMMT560 / FMMT560A B SuperS0T -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings*


    OCR Scan     		PDF FMMT560 FMMT560A OT-23) MT560/ MT560A 500mA, FMMT560A MT560

    FMMT560

    Abstract: No abstract text available
    Text: SEM ICONDUC TO R t m July 1998 FMMT560 / FMMT560A E B SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Ta^ c^ o«— ^


    OCR Scan     		PDF FMMT560/FMMT560A FMMT560 FMMT560A OT-23) FMMT560/FMMT560A 500mA,

    FMMT560

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R tm July 1998 FMMT560 / FMMT560A *• B SuperS0T -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute M axim um Ratings*


    OCR Scan     		PDF FMMT560/FMMT560A FMMT560 FMMT560A OT-23) T560/FM T560A 500mA, T560A

    c 2579 power transistor

    Abstract: TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ
    Text: m I TELEFUNKEN ELECTRONIC 17E » f l'îa O G 'ib O O O W i 1 BF 885 S T IIL IF M K IK IK I e le c tro n ic C ru ft* T«chno oâ«s T - ^ - o z r Silicon NPN Epitaxial Planar RF Transistor Applications; Video 8-class power stages (n TV receivers Features: • High reverse voltage


    OCR Scan     		PDF JEDECTO126 15A3DIN c 2579 power transistor TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ

    2646 TRANSISTOR

    Abstract: BU908A telefunken 2650 BU908 transistor Bf 908 marking A27 0QCH513 telefunken transistor TRANSISTOR 908 p
    Text: TELEFUNKEN ELECTRONIC 17E » • ÔREOORb DDO'îSD'i b • BU 908 TTIiUIiFttiïiKiiK! electronic CrMlrve Tschnotogtes Silicon NPN Power Transistor Application: Switching mode power supply Features: • In triple diffusion technique • Short switching time


    OCR Scan     		PDF 15A3DIN 2646 TRANSISTOR BU908A telefunken 2650 BU908 transistor Bf 908 marking A27 0QCH513 telefunken transistor TRANSISTOR 908 p

    TRANSISTOR BC 157

    Abstract: TRANSISTOR BC 158 BY22B transistor BC 245 c B13 IC marking code Transistor SJ 2517 sj 2518 TRANSISTOR as BC 158 SJ 2517 BFX34
    Text: TELEFUNKEN ELECTRONIC 17E D • f l^ O t n b □QO'353‘3 4 . BUT 93 W IUMFfaimm electronic Creàtiy*T«chnoiosa r - 2 3 - i! Silicon NPN Power Transistor Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique


    OCR Scan     		PDF T0126 15A3DIN TRANSISTOR BC 157 TRANSISTOR BC 158 BY22B transistor BC 245 c B13 IC marking code Transistor SJ 2517 sj 2518 TRANSISTOR as BC 158 SJ 2517 BFX34