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    TRANSISTOR NPN 30 WATT Search Results

    TRANSISTOR NPN 30 WATT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NPN 30 WATT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUV23

    Abstract: motorola transistor 0063
    Text: MOTOROLA Order this document by BUV23/D SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications.


    Original     		PDF BUV23/D* BUV23/D BUV23 motorola transistor 0063

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort MJ802 High−Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. • High DC Current Gain —


    Original     		PDF MJ802 100-Watts MJ4502

    TRANSISTOR 1300

    Abstract: J1 TRANSISTOR Radar PH1113-100 100 amp power transistor
    Text: Radar Pulsed Power Transistor 100 Watts, 1.1-1.3 GHz, 3µs Pulse, 30% Duty PH1113-100 PH1113-100 Radar Pulsed Power Transistor - 100 Watts, 1.1-1.3 GHz, 3µs Pulse, 30% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor


    Original     		PDF PH1113-100 PH1113-100 TRANSISTOR 1300 J1 TRANSISTOR Radar 100 amp power transistor

    J802

    Abstract: MJ802 EQUIVALENT MJ4502 EQUIVALENT MJ4502 MJ802 transistor mj4502
    Text: ON Semiconductort MJ802 High-Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — •


    Original     		PDF MJ802 MJ4502 r14525 J802/D J802 MJ802 EQUIVALENT MJ4502 EQUIVALENT MJ4502 MJ802 transistor mj4502

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort High−Power NPN Silicon Transistor 2N5302 . . . for use in power amplifier and switching circuits applications. • Low Collector−Emitter Saturation Voltage − 30 AMPERE POWER TRANSISTOR NPN SILICON 60 VOLTS 200 WATTS VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc


    Original     		PDF 2N5302

    2N4922

    Abstract: BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 15 at IC = 8 A


    Original     		PDF BUV23 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N4922 BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482

    MJ802

    Abstract: MJ802 MOTOROLA MJ802/D MJ802-D MOTOROLA TRANSISTOR MJ4502 transistor MJ802
    Text: MOTOROLA Order this document by MJ802/D SEMICONDUCTOR TECHNICAL DATA MJ802 High-Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel.


    Original     		PDF MJ802/D* MJ802/D MJ802 MJ802 MOTOROLA MJ802/D MJ802-D MOTOROLA TRANSISTOR MJ4502 transistor MJ802

    TRANSISTOR 2n5302

    Abstract: 2N5302
    Text: ON Semiconductort High-Power NPN Silicon Transistor 2N5302 . . . for use in power amplifier and switching circuits applications. • Low Collector–Emitter Saturation Voltage – 30 AMPERE POWER TRANSISTOR NPN SILICON 60 VOLTS 200 WATTS VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc


    Original     		PDF 2N5302 r14525 2N5302/D TRANSISTOR 2n5302 2N5302

    BU108

    Abstract: BDW94 DTS801 MJE2482 2SC1419 BU326 BU100 2N3055/MJ802
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ802 High-Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — hFE = 25–100 @ IC = 7.5 A


    Original     		PDF MJ802 MJ4502 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 BDW94 DTS801 MJE2482 2SC1419 BU326 BU100 2N3055/MJ802

    PTB 20200

    Abstract: No abstract text available
    Text: e PTB 20200 30 Watts, 380–500 MHz RF Power Transistor Description The 20200 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380–500 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP


    Original     		PDF 1-877-GOLDMOS 1301-PTB PTB 20200

    MJE2360T

    Abstract: MOTOROLA TRANSISTOR MJE2361T
    Text: MOTOROLA Order this document by MJE2360T/D SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT.


    Original     		PDF MJE2360T/D* MJE2360T/D MJE2360T MOTOROLA TRANSISTOR MJE2361T

    BU108

    Abstract: TIP105 Darlington transistor BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage —


    Original     		PDF MJE2361T MJE2360T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 TIP105 Darlington transistor BDX54 BU326 BU100

    transistor A 935

    Abstract: No abstract text available
    Text: e PTB 20007 30 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20007 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 30 watts minimum output power, it may be used for


    Original     		PDF 1-877-GOLDMOS 1301-PTB transistor A 935

    4700 IC

    Abstract: ic 4700 20091
    Text: e PTB 20091 30 Watts, 470–860 MHz UHF TV Linear Power Transistor Description The 20091 is an NPN, common emitter RF power transistor intended for 25 Vdc class A operation from 470 to 860 MHz. It is rated at 30 watts P-sync output power. Ion implantation, nitride surface passivation


    Original     		PDF 1-877-GOLDMOS 1301-PTB 4700 IC ic 4700 20091

    c 3421 transistor

    Abstract: d 3421 transistor J802
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J802 High-Pow er NPN Silicon Transistor . . . lor use as an output device in complementary audio amplifiers to 100-Watts music power per channel. • • • 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS


    OCR Scan     		PDF 100-Watts MJ4502 c 3421 transistor d 3421 transistor J802

    MRF454 motorola

    Abstract: ferroxcube 56-590-65 56590653B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF454 NPN Silicon RF Power TVansistor . . . designed for power am plifier applications in industrial, commercial and am ateur radio equipment to 30 MHz. • 80 W, 30 MHz RF POWER TRANSISTOR NPN SILICON Specified 12.5 Volt, 30 MHz Characteristics —


    OCR Scan     		PDF MRF454 MRF454 nF/15 VK200-20/4B, 56-590-65/3B MRF454 motorola ferroxcube 56-590-65 56590653B

    D 400 F 6 F BIPOLAR TRANSISTOR

    Abstract: buv23 transistor 325
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High D C current gain: H FE min. - 15 at I q - 8 A


    OCR Scan     		PDF BUV23 D 400 F 6 F BIPOLAR TRANSISTOR transistor 325

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20170 30 Watts, 1.80 - 2.00 GHz Cellular Radio RF Power Transistor Preliminary Key Features Description The 20170 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 1.8-2.00 GHz frequency band. It is rated at 30 Watts minimum output


    OCR Scan     		PDF 26Vdc, 100mA

    inductor vk200

    Abstract: VK200 INDUCTOR MRF238 VK200-4B VK200 4B inductor vk200 rf choke rasistor marine radio 02CM arco trimmer
    Text: i MRF238 MOTOROLA Advance Information 30 W — 160 MHz The RF Line RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed for 13.6 Volt VHF large»signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.


    OCR Scan     		PDF MRF238 inductor vk200 VK200 INDUCTOR MRF238 VK200-4B VK200 4B inductor vk200 rf choke rasistor marine radio 02CM arco trimmer

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20200 30 Watts, 450 - 490 MHz Cellular Radio RF Power Transistor Preliminary Description Key Features The 20200 is a class AB, NPN, common emitter RF Power Transistor intended for 24 V D C operation across the 450-490 MHz frequency band. It is rated at 30 Watts minimum output


    OCR Scan     		PDF 150mA

    PTB 20200

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20200 30 Watts, 380-500 MHz Cellular Radio RF Power Transistor Description The 20200 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380-500 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF

    470-860 mhz Power 5 w

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20091 30 Watts, 470-860 MHz UHF TV Linear Power Transistor Description The 20091 is an NPN, common emitter RF power transistor intended for 25 Vdc class A operation from 470 to 860 MHz. It is rated at 30 watts P-sync output power. Ion implantation, nitride surface passivation


    OCR Scan     		PDF -16dB, 470-860 mhz Power 5 w

    transistor BD 522

    Abstract: BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD801 BD802 BD808 BD810
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor ‘Motorola Preferred Device 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi


    OCR Scan     		PDF BD801 BD801 transistor BD 522 BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD802 BD808 BD810

    transistor A 935

    Abstract: t 935 NE50
    Text: ERICSSON ^ PTB 20007 30 Watts, 935-960 MHz Cellular Radio RF Power Transistor Description The 20007 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 30 watts minimum output power, it may be used for


    OCR Scan     		PDF