PH192
Abstract: PH1920-45 27J5
Text: PH1920-45 Wireless Bipolar Power Transistor 45W, 1930-1990 MHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • NPN silicon microwave power transistor Common emitter class AB operation Internal input and output impedance matching
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PH1920-45
PH192
PH1920-45
27J5
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transistor j5
Abstract: ER105 diode j54 PH1920-45 transistor npn a 1930 wacom transistor 930 1/transistor j5
Text: SE z-z * =g = -= -A = = -r an AMP company Wireless Bipolar Power Transistor, 45W 1930 - 1990 MHz PHI 920-45 Features NPN Silicon Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Diffused Emitter Ballasting Gold Metalization System
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Untitled
Abstract: No abstract text available
Text: PH1920-33 Wireless Bipolar Power Transistor 33W, 1930-1900 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter class AB operation Internal input and output impedance matching
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PH1920-33
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PH1920-33
Abstract: No abstract text available
Text: PH1920-33 Wireless Bipolar Power Transistor 33W, 1930-1900 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter class AB operation Internal input and output impedance matching
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PH1920-33
PH1920-33
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UPB2060
Abstract: No abstract text available
Text: UPB2060 60W PEP, 1.8-2.0 GHz, 26V, Class AB, Broadband RF Power NPN Bipolar Transistor The UPB2060 is a high-power COMMON EMITTER bipolar transistor capable of providing 60 Watts of Class AB RF PEP output power over the band 1.8-2.0 GHz. This transistor is specifically designed
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UPB2060
UPB2060
400mA
491w6
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UPB1835
Abstract: TM35W
Text: UPB1835 35W PEP, 1.8-2.0 GHz, 25V, Class AB, Broadband RF Power NPN Bipolar Transistor The UPB1835 is a high-power COMMON EMITTER bipolar transistor capable of providing 35 Watts of Class AB RF PEP output power over the band 1.8-2.0 GHz. This transistor is specifically designed for
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UPB1835
UPB1835
TM35W
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19Sg
Abstract: WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR
Text: MIL-S-19500/65B 19 March 1970 SUPERSEDING MIL.S.19500/65A 19 A@ MILfTARY SEMICONDUCTOR 1963 SPECIFICATION DEVICE, TRANSISTOR, NPN, GERMANIUM, SWITCHING TYPE 2N3BS This specification partnmnk is and A~mcics mundalcvy for uc of the Department by all Deof Defense.
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MIL-S-19500/65B
19500/65A
2N388.
UIL-S-19500165B
514AD
19Sg
WN smd transistor
2N388
1027CB
2N388 JAN equivalent
smd transistor marking da
SMD TRANSISTOR MARKING km
transistor smd marking mx
SMD TRANSISTOR MARKING ME
2d SMD NPn TRANSISTOR
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J645
Abstract: J626 transistor J626 ultrarf UPB2010B J626 Transistor
Text: URFDB Sec 03_2010B 11/3/99 10:31 AM Page 3-42 UPB2010B 10W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM,
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2010B
UPB2010B
30dBc
130mA
100oC
175oC
J645
J626
transistor J626
ultrarf
UPB2010B
J626 Transistor
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J406
Abstract: TRANSISTOR J406 TRANSISTOR j412 ultrarf UPB2025B J245
Text: URFDB Sec 03_2025B 11/3/99 10:35 AM Page 3-50 UPB2025B 25W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM,
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2025B
UPB2025B
30dBc
250mA
100oC
175oC
J406
TRANSISTOR J406
TRANSISTOR j412
ultrarf
UPB2025B
J245
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J267
Abstract: ultrarf UPB2003B J259
Text: URFDB Sec 03_2003B 11/3/99 10:29 AM Page 3-34 UPB2003B 3W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 3W, it is ideal for CDMA, TDMA, GSM, FM,
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2003B
UPB2003B
30dBc
100oC
175oC
J267
ultrarf
UPB2003B
J259
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358 SMD transistor
Abstract: smd capacitor philips philips ceramic capacitors smd smd resistor philips 1206 capacitor SMD PHILIPS CERAMIC CAPACITOR SMD PHILIPS transistor SMD DK philips smd 1206 resistor AN98026 SMD Transistor 6f
Text: APPLICATION NOTE 30 W class-AB amplifier with the BLV2045 for 1930 − 1990 MHz PCS AN98023 Philips Semiconductors 30 W class-AB amplifier with the BLV2045 for 1930 − 1990 MHz (PCS) CONTENTS 1 INTRODUCTION 2 CIRCUIT DESCRIPTION 3 DC BIAS CIRCUIT 4 RF MEASUREMENT RESULTS
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BLV2045
AN98023
BLV2045,
OT390
SCA57
358 SMD transistor
smd capacitor philips
philips ceramic capacitors smd
smd resistor philips 1206
capacitor SMD PHILIPS
CERAMIC CAPACITOR SMD PHILIPS
transistor SMD DK
philips smd 1206 resistor
AN98026
SMD Transistor 6f
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SMD DIODE gp 817
Abstract: smd resistor philips 1206 smd capacitor philips transistor SMD DK philips ceramic capacitors smd SMD Transistor 6f philips smd 1206 resistor SMD TRANSISTOR L6 philips smd 1206 BEP SMD ZENER
Text: APPLICATION NOTE 15 W class-AB amplifier with the BLV2044 for 1930 − 1990 MHz PCS AN98022 Philips Semiconductors 15 W class-AB amplifier with the BLV2044 for 1930 − 1990 MHz (PCS) CONTENTS 1 INTRODUCTION 2 CIRCUIT DESCRIPTION 3 DC BIAS CIRCUIT 4 RF MEASUREMENT RESULTS
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BLV2044
AN98022
BLV2044,
OT437
SCA57
SMD DIODE gp 817
smd resistor philips 1206
smd capacitor philips
transistor SMD DK
philips ceramic capacitors smd
SMD Transistor 6f
philips smd 1206 resistor
SMD TRANSISTOR L6
philips smd 1206
BEP SMD ZENER
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Di 762 transistor
Abstract: transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33
Text: an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz PHI 920-33 v2.01 Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System
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PH1920-33
lN4245
73050258-S
Di 762 transistor
transistor a015
transistor npn a 1930
wacom connector
wacom
33w NPN
13MM
PH1920-33
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2SK43 transistor
Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written
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TRANSISTOR MOTOROLA MAC 223
Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),
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Motorola transistor smd marking codes
Abstract: MARKING V14 SOT23-5 Motorola 622 J112 smd code marking wl sot23 smd code marking rf ft sot23 diode SMD WL sot23 Microwave GaAs FET catalogue BFG135 amplifier catv DISTRIBUTION NETWORK diagram BF256B spice model
Text: RF Manual 9th edition Application and design manual for RF products November 2006 date of release: November 2006 document order number: 9397 750 15817 Henk Roelofs,Vice President & General Manager RF Products Introduction We are excited to introduce the first issue of the RF Manual under our new
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November2006
2006NXPB
Motorola transistor smd marking codes
MARKING V14 SOT23-5
Motorola 622 J112
smd code marking wl sot23
smd code marking rf ft sot23
diode SMD WL sot23
Microwave GaAs FET catalogue
BFG135 amplifier
catv DISTRIBUTION NETWORK diagram
BF256B spice model
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circuit diagram of GSM based home automation system
Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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Motorola transistor smd marking codes
Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.
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Untitled
Abstract: No abstract text available
Text: bbS3T31 Q025T4E ObS M A R X Philips Semiconductors N AUER PHILIPS/DISCRETE Product specification b?E D NPN switching transistor PMST4401 PIN CONFIGURATION FEATURES • S-mini package • High current. DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT323
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bbS3T31
Q025T4E
PMST4401
OT323
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S100 NPN Transistor
Abstract: BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503
Text: L¿ I 2SC D • flE35b05 GGG4507 S NPN Silicon RF Transistor I SI E 6 BF 503 SIEMENS AKTIENGESELLSCHAF BF 5 0 3 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers, VH F mixers, and VHF
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fl23SbOS
00Q4507
Q62702-F574
S100 NPN Transistor
BF603
S100 transistor
BF503
Q62702-F574
S100
S400
transistor 503
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S100 NPN Transistor
Abstract: No abstract text available
Text: u r 2SC D • fl23 Sb05 GGQ4507 S NPN Silicon RF Transistor isiEG : -~r-S i- M BF 503 -SIEMENS AKTIENGESELLSCHAF - ;— BF 5 0 3 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 DIN 4 1 8 6 8 .
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GGQ4507
E--08
S100 NPN Transistor
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Untitled
Abstract: No abstract text available
Text: Coming Attractions m an A M P com pany Wireless Bipolar Power Transistor, 45W 1930-1990 MHz PH1920-45 V 1.00 Features • • • • • NPN Silicon Power Transistor Com m on Emitter Class AB O peration Internal Input and O u tp u t Im pedance Matching Diffused Emitter Ballasting
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PH1920-45
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p2x transistor
Abstract: transistor marking code p2x PMST4401 bbS3T31
Text: 0. . e . „ . Philips Semiconductors • bbSB^l 0025^42 DbS M A P X " n AHER P H I L I P S / D I S C R E T E _ . ._ t. Product specification b?E D NPN switching transistor PMST4401 PIN CONFIGURATION FEATURES • S-mini package • High current. DESCRIPTION
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PMST4401
OT323
PMST4401
bbS3cl31
p2x transistor
transistor marking code p2x
bbS3T31
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transistor 33w
Abstract: 33w NPN
Text: m an A M P com pany Wireless Bipolar Power Transistor, 33W 1930-1990 MHz Features PH1920-33 .744 18,90 -.560(14.22)- - • • • • • NPN Silicon M icrow ave P o w er T ran sisto r C o m m o n Km itter C lass AB O peratio n Intern al Inpu t and O utput Im p ed an ce M atching
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PH1920-33
1N4245
transistor 33w
33w NPN
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