Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR NPN C4 NF Search Results

    TRANSISTOR NPN C4 NF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    TRANSISTOR NPN C4 NF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 3 MARKING SOT-113 C4


    Original
    MMBT1815 150mA MMBT1015 OT-113 QW-R210-004 PDF

    transistor marking c4

    Abstract: UTCMMBT1815
    Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 2 3 MARKING SOT-523 C4


    Original
    MMBT1815 150mA MMBT1015 OT-523 QW-R221-009 transistor marking c4 UTCMMBT1815 PDF

    MMBT1015

    Abstract: MMBT1815
    Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 3 MARKING SOT-113 C4


    Original
    MMBT1815 150mA MMBT1015 OT-113 QW-R210-004 MMBT1015 PDF

    TRANSISTOR b100

    Abstract: No abstract text available
    Text: UTCMMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR


    Original
    UTCMMBT1815 150mA MBT1015 OT-23 QW-R206-014 TRANSISTOR b100 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR


    Original
    MMBT1815 150mA MBT1015 OT-23 QW-R206-014 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR


    Original
    MMBT1815 150mA MBT1015 OT-23 QW-R206-014 PDF

    mbt1015

    Abstract: MMBT1815
    Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR


    Original
    MMBT1815 150mA MBT1015 OT-23 QW-R206-014 mbt1015 MMBT1815 PDF

    100 pf, ATC Chip Capacitor

    Abstract: motorola rf Power Transistor SMD Transistor Y14 100 pf, ATC Chip Capacitor 100A Motorola Potentiometer 8B TRANSISTOR SMD 470 resistor motorola rf device data book SMD Transistor 6f SMD potentiometer
    Text: MOTOROLA Order this document by MRF6401PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6401 PHOTOMASTER CASE 305C–02, STYLE 1 SOE200–PILL R4 R5 R6 + VCC R7 – Q1 R2 R8 R3 C9 C4 C3 C10 TL11 TL10 C5 TL5 RF INPUT C8 TL6


    Original
    MRF6401PHT/D MRF6401 SOE200 MRF6401 MRF6401PHT/D* 100 pf, ATC Chip Capacitor motorola rf Power Transistor SMD Transistor Y14 100 pf, ATC Chip Capacitor 100A Motorola Potentiometer 8B TRANSISTOR SMD 470 resistor motorola rf device data book SMD Transistor 6f SMD potentiometer PDF

    transistor rf m 1104

    Abstract: motorola rf Power Transistor motorola rf 1104 Power Transistor SD135 MOTOROLA TRANSISTOR T2 100 mf capacitor Motorola 1N4007 transistor 228 npn motorola motorola rf device MRF641
    Text: MOTOROLA Order this document by MRF6414PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 PHOTOMASTER NPN Silicon RF Power Transistor CASE 333A– 02, STYLE 2 C9 +VCC T2 R1 C8 P1 C5 D1 C7 C6 D2 C4 R2 RF OUTPUT RF INPUT C3 T1 50 W C1 50 W C1, C3 C2, C7


    Original
    MRF6414PHT/D MRF6414 1N4007 SD135 MRF6414 MRF6414PHT/D* transistor rf m 1104 motorola rf Power Transistor motorola rf 1104 Power Transistor SD135 MOTOROLA TRANSISTOR T2 100 mf capacitor Motorola 1N4007 transistor 228 npn motorola motorola rf device MRF641 PDF

    MBB284

    Abstract: BFG35 amplifier
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION


    Original
    BFG35 OT223 BFG55. BFG35 MSB002 OT223. MBB284 BFG35 amplifier PDF

    BFG135 amplifier

    Abstract: BFG135 A amplifier BFG135 TRANSISTOR BFG135 MEA946 MEA945 MBB298
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor


    Original
    BFG135 OT223 MBB285 MBB287 BFG135 amplifier BFG135 A amplifier BFG135 TRANSISTOR BFG135 MEA946 MEA945 MBB298 PDF

    2N5179

    Abstract: npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10


    Original
    2N5179 2N5179 npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters PDF

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10


    Original
    2N5179 2N5179 PDF

    TRANSISTOR ML6

    Abstract: TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor ZO 103 MA 75 533 resistor MR25 Miniature Ceramic Plate Capacitors 2222 philips MR25 resistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ270 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFQ270 PINNING • High power gain


    Original
    BFQ270 OT172A1. TRANSISTOR ML6 TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor ZO 103 MA 75 533 resistor MR25 Miniature Ceramic Plate Capacitors 2222 philips MR25 resistor PDF

    NPN planar RF transistor

    Abstract: BFG10 SOT143 C9 XN-71 transistor K 2937
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 1995 Aug 31 Philips Semiconductors Product specification NPN 2 GHz RF power transistor


    Original
    BFG10; BFG10/X BFG10 NPN planar RF transistor BFG10 SOT143 C9 XN-71 transistor K 2937 PDF

    Transistor W03

    Abstract: AN1465 START540 ultra low noise NPN transistor 30mils ultra linearity rf transistor
    Text: AN1465 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START540 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 5mA Gain = 14.2dB, IP3out = 23dBm, NF = 1.4dB, RLin = 6dB, RLout = 14dB 1. INTRODUCTION. START540 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high


    Original
    AN1465 START540 23dBm, OT-343 SC-70) 30mils Transistor W03 AN1465 ultra low noise NPN transistor ultra linearity rf transistor PDF

    ic ma 8910

    Abstract: 2SC4319
    Text: 2SC4319 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 1 9 Unit in mm VHF'-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = l.ldB, |S2iç|2= 15dB f=lGHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan
    2SC4319 S21el2 Coll53 ic ma 8910 2SC4319 PDF

    smd transistor bcv62

    Abstract: SMD Transistor Y14 TRANSISTOR HK SMD Transistor t 2 smd motorola 8B TRANSISTOR SMD RTW 317 SMD smd transistor 8B
    Text: * w rtw fc # » Order this document by MRF6401PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor C1 C2 C3 C4, C6, C7, C9 C5 C8 C10 C11 1.5 pF, ATC Chip Capacitor 100A 3.9 pF, ATC Chip Capacitor 100A 56 pF. ATC Chip Capacitor 100A


    OCR Scan
    MRF6401PHT/D MRF6401 BCV62 1600-200otorola, smd transistor bcv62 SMD Transistor Y14 TRANSISTOR HK SMD Transistor t 2 smd motorola 8B TRANSISTOR SMD RTW 317 SMD smd transistor 8B PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SC4322 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 2 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F=1.8dB , |S2lel2= 7-5dB f=2GHz Unit in mm M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan
    2SC4322 SC-59 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SC4325 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 5 VHF—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 • Low Noise Figure, High Gain. • N F=1.8dB , |S2 lel2= 7-5dB f=2GHz ± 0.1 1 . 2 5 Í 0.1 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan
    2SC4325 Na200 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SC4320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 0 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.2 2.9 - 0.3 11 • Low Noise Figure, High Gain • N F = l.ld B , |S2lel2= 15dB f=lG H z 'S M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan
    2SC4320 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4321 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 1 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm 2.1 • Low Noise Figure, High Gain • N F = l.ld B , |S2lel2= 13dB f=lG H z ± 0.1 1 . 2 5 Í 0.1 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan
    2SC4321 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SC4324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 4 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.2 2.9 - 0.3 11 • Low Noise Figure, High Gain. • N F=1.8dB , |S2lel2= 9-5dB f=2GHz . " S M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan
    2SC4324 EMITTE098 PDF

    BFG35

    Abstract: TRANSISTOR FQ BFG35 amplifier BHS111 npn 2222 transistor TRANSISTOR NPN c4 nf C2570
    Text: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.


    OCR Scan
    BFG35 OT223 OT223. MSA035 TRANSISTOR FQ BFG35 amplifier BHS111 npn 2222 transistor TRANSISTOR NPN c4 nf C2570 PDF