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    TRANSISTOR NTE 210 Search Results

    TRANSISTOR NTE 210 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NTE 210 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE74HC4067

    Abstract: NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165
    Text: Semiconductors Integrated Circuits Integrated Circuits cont. Part Number Description NTE40175B IC-CMOS, Quad D-Type Flip-Flop NTE4017B IC-CMOS, Decade Counter w/10 Decoder Outputs NTE40182B IC-CMOS, Look Ahead Carry Generator Part Number Description NTE4018B


    Original     		PDF NTE40175B NTE4017B NTE40182B NTE4018B NTE4001B NTE4019B NTE4001BT NTE40192B NTE4002B NTE40193B NTE74HC4067 NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165

    13003 TRANSISTOR

    Abstract: PC 13003 TRANSISTOR circuit ic marking Yb TRANSISTOR MARKING YB 13003 TRANSISTOR equivalent 7355 15C02S 13003 TRANSISTOR PC 13003 TRANSISTOR 13003 NPN Transistor features 73-551
    Text: Ordering number : ENN7355A 15C02S NPN Epitaxial Planar Silicon Transistor 15C02S Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions Low-frequency amplifer, high-speed switching, small motor drive. unit : mm 2106A [15C02S]


    Original     		PDF ENN7355A 15C02S 15C02S] 13003 TRANSISTOR PC 13003 TRANSISTOR circuit ic marking Yb TRANSISTOR MARKING YB 13003 TRANSISTOR equivalent 7355 15C02S 13003 TRANSISTOR PC 13003 TRANSISTOR 13003 NPN Transistor features 73-551

    15C01S

    Abstract: TRANSISTOR MARKING YB
    Text: Ordering number : ENN7506 15C01S NPN Epitaxial Planar Silicon Transistor 15C01S Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency Amplifier, muting circuit. unit : mm 2106A [15C01S] Features • • • Large current capacitance.


    Original     		PDF ENN7506 15C01S 15C01S] 15C01S TRANSISTOR MARKING YB

    NTE159

    Abstract: NTE123AP NTE159MCP NTE159MC
    Text: NTE159 Silicon PNP Transistor Audio Amplifier, Switch Compl to NTE123AP Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V


    Original     		PDF NTE159 NTE123AP) 800mA 500mA, 500mV, 100MHz 100mA, 526-NTE159 NTE159 NTE123AP NTE159MCP NTE159MC

    30A02S

    Abstract: transistor marking YB
    Text: Ordering number : ENN7360 30A02S PNP Epitaxial Planar Silicon Transistor 30A02S Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions Low-frequency Amplifier, high-speed switching, small motor drive. unit : mm 2106A [30A02S]


    Original     		PDF ENN7360 30A02S 30A02S] 30A02S transistor marking YB

    TRANSISTOR MARKING YB

    Abstract: 15C01S
    Text: Ordering number : ENN7506 15C01S NPN Epitaxial Planar Silicon Transistor 15C01S Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency Amplifier, muting circuit. unit : mm 2106A [15C01S] Features • • • Large current capacitance.


    Original     		PDF ENN7506 15C01S 15C01S] TRANSISTOR MARKING YB 15C01S

    TRANSISTOR MARKING YB

    Abstract: 30C01S 75-144
    Text: Ordering number : ENN7514 30C01S NPN Epitaxial Planar Silicon Transistor 30C01S Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency Amplifier, muting circuit. unit : mm 2106A [30C01S] Features • • • Large current capacitance.


    Original     		PDF ENN7514 30C01S 30C01S] TRANSISTOR MARKING YB 30C01S 75-144

    13003

    Abstract: 13003 application notes 13003 TRANSISTOR 13003 TRANSISTOR equivalent PC 13003 PC 13003 TRANSISTOR 15C02S PC 13003 TRANSISTOR circuit etc 13003 ENN7355
    Text: Ordering number : ENN7355 15C02S NPN Epitaxial Planar Silicon Transistor 15C02S Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions Low-frequency amplifer, high-speed switching, small motor drive. unit : mm 2106A [15C02S]


    Original     		PDF ENN7355 15C02S 15C02S] 13003 13003 application notes 13003 TRANSISTOR 13003 TRANSISTOR equivalent PC 13003 PC 13003 TRANSISTOR 15C02S PC 13003 TRANSISTOR circuit etc 13003 ENN7355

    13003 TRANSISTOR

    Abstract: 15C02S 13003 TRANSISTOR npn
    Text: Ordering number : ENN7355A 15C02S NPN Epitaxial Planar Silicon Transistor 15C02S Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions Low-frequency amplifer, high-speed switching, small motor drive. unit : mm 2106A [15C02S]


    Original     		PDF ENN7355A 15C02S 15C02S] 13003 TRANSISTOR 15C02S 13003 TRANSISTOR npn

    TRANSISTOR MARKING YB

    Abstract: 30C01S
    Text: Ordering number : ENN7514 30C01S NPN Epitaxial Planar Silicon Transistor 30C01S Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency Amplifier, muting circuit. unit : mm 2106A [30C01S] Features • • • Large current capacitance.


    Original     		PDF ENN7514 30C01S 30C01S] TRANSISTOR MARKING YB 30C01S

    30A02S

    Abstract: No abstract text available
    Text: Ordering number : ENN7360 30A02S PNP Epitaxial Planar Silicon Transistor 30A02S Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions Low-frequency Amplifier, high-speed switching, small motor drive. unit : mm 2106A [30A02S]


    Original     		PDF ENN7360 30A02S 30A02S] 30A02S

    NTE123AP

    Abstract: transistor NTE123AP NTE159 NTE123
    Text: NTE123AP Silicon NPN Transistor Audio Amplifier, Switch Compl to NTE159 Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V


    Original     		PDF NTE123AP NTE159) 600mA 100kHz 150mA, 500mA, 526-NTE123AP NTE123AP transistor NTE123AP NTE159 NTE123

    NTE977

    Abstract: NTE950 nte951 NTE950/NTE951/NTE977
    Text: NTE950/NTE951/NTE977 Integrated Circuit Positive 3 Terminal Voltage Regulator, 100mA Description: The NTE950, NTE951, and NTE977 are positive 3–terminal voltage regulators in available in a TO92 type package. With adequate heat sinking these regulators can deliver 100mA output current. Current limiting is included to limit peak output current to safe value. Safe area protection for the output


    Original     		PDF NTE950/NTE951/NTE977 100mA NTE950, NTE951, NTE977 100mA NTE950 nte951 NTE950/NTE951/NTE977

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SA1961 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC5419 Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 4.0 • Features ■ Absolute Maximum Ratings * 0.65 max. Parameter Symbol Collector to base voltage


    Original     		PDF 2SA1961 2SC5419

    tt 3043 Transistor 5 pin type

    Abstract: transistor sj 3161 transistor TT 3043 SCR K 3155 transistor NTE3090 NTE519 NTE3078 scr nte 480 NTE cross 160A TRIAC
    Text: N T E ELECTRONICS INC S5E T> bM aiSST DQQEbfl? STS « N T E T-H \-*O I D INDICATORS NTE TVI» No. Description and Application Dtag. NO. «y Per Bag Ind Pkg S ia Typical Viewing Angle Viewed ' Color Typical Maximum (Volts) Breakdown voltage (Vorta) Maximum


    OCR Scan     		PDF G0057D2 tt 3043 Transistor 5 pin type transistor sj 3161 transistor TT 3043 SCR K 3155 transistor NTE3090 NTE519 NTE3078 scr nte 480 NTE cross 160A TRIAC

    diac SBS 14

    Abstract: diac 083 NTE6405 IR 944 triac varactor diode bb 205 APPLICATION for NTE 6407 low voltage scr DIAC 502 TVPA TRANSISTOR 2501 lf 113
    Text: N T E ELE CT RONICS INC_ SEE J> • ~ b43125T D002b72 fibE * N T E 1 -Z S SPECIAL DEVI SILICON UNIJUNCTION TRAN SISTO R UJT Maximum Ratings NTE Type Nim ber Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Vote) RMS Power Dissipation


    OCR Scan     		PDF

    NTE1004

    Abstract: transistor d1 391 NTE1010 stereo amp NTE1013 EM 257 NTE1005 NTE1015 NTE100 NTE1003
    Text: LINEAR INTEGRATED CIRCUITS 8-Lead Metal Can, See Diag. 200 NTE1002 FM IF TV Amp, VCC = 12V 14-Lead DIP, See Diag. 247 NTE1003 FM/AM IF Amp, Vc c = 10V NTE1004 AFT System for TV, Vc c » 30V 14-Lead DIP, See Diag. 250 Top View Q Vcc Q Vcc AM Detector Output


    OCR Scan     		PDF NTE1002 NTE1003 14-Lead NTE1004 NTE1005 19kHz 38kHz 38kHz NTE1004 transistor d1 391 NTE1010 stereo amp NTE1013 EM 257 NTE1005 NTE1015 NTE100 NTE1003

    NTE1003

    Abstract: No abstract text available
    Text: LINEAR INTEGRATED CIRCUITS 8-Lead Metal Can, See Diag. 200 NTE1002 FM IF TV Amp, VCC = 12V 14-Lead DIP, See Diag. 247 NTE1003 FM/AM IF Amp, Vc c = 10V NTE1004 AFT System for TV, Vc c » 30V 14-Lead DIP, See Diag. 250 Top View Q Vcc Q Vcc AM Detector Output


    OCR Scan     		PDF NTE1002 14-Lead NTE1003 NTE1004 NTE1005 19kHz NTE1014 NTE1015 NTE1003

    ICM7213IJD

    Abstract: ICM7213IPD ICM7213 Quartz Crystal 10mhz Quartz 4,096 MHz
    Text: ¡ r ICM7213 ICM7213 One Second/One Minute Timebase Generator GENERAL DESCRIPTION FEATURES The ICM7213 is a fully integrated m icropow er oscillator and frequency divider with four buffered outputs suitable for interfacing with m ost logic fam ilies. The power supply may


    OCR Scan     		PDF ICM7213 ICM7213 194304MHz 2048Hz, 1024Hz, 133Hz, 1/60Hz 05ppm 125ms ICM7213IJD ICM7213IPD Quartz Crystal 10mhz Quartz 4,096 MHz

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK3051 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK3051 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm TO-220FL


    OCR Scan     		PDF 2SK3051 O-220FL 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK3089 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O SVI 2SK3089 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-220FL 10.3MAX APPLICATIONS


    OCR Scan     		PDF 2SK3089 O-220FL

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SK3090 2SK3090 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O SVI HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-220FL 10.3MAX


    OCR Scan     		PDF 2SK3090 O-220FL

    LH007O-OH

    Abstract: 10k ohms potentiometer NTE
    Text: u im TECHNOLOGY LT1031/LH0070 Precision 10 Volt Reference F€flTUR€S DCSCRIPTIOfl • Pin Compatible with LH0070 and AD581* ■ Ultra Low Drift—5ppm/°C Max Slope ■ Trimmed Output Voltage ■ Operates in Series or Shunt Mode ■ Output Sinks and Sources in Series Mode


    OCR Scan     		PDF LH0070 AD581* 100dB LT1031/LH0070 LT1031 LT1012C. LT1031/LH0070 LH007O-OH 10k ohms potentiometer NTE

    Untitled

    Abstract: No abstract text available
    Text: uuU RA46 / SMRA46 1000 to 4000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRAWIDE BANDWIDTH: 0.8-4.2 GHz TYR HIGH GAIN: 25.5 dB (TYR) HIGH OUTPUT POWER: +19.0 dBm (TYR) LOW NOISE: 4.5 dB (TYR) Outline Drawings RA46 Specifications*


    OCR Scan     		PDF SMRA46