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    TRANSISTOR P105 Search Results

    TRANSISTOR P105 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR P105 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    3SK22

    Abstract: 3SK222
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK222 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • The Characteristic of Cross-Modulation is good. Unit: mm Embossed Type Taping


    Original     		3SK222 3SK22 3SK222 PDF

    2u55

    Abstract: 3SK134B
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES V Gate1 to Source Voltage VG1S ±8 Gate2 to Source Voltage VG2S ±8 ±10 *1 V Gate1 to Drain Voltage


    Original     		3SK134B SC-61) 2u55 3SK134B PDF

    3SK231

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz • High Power Gain Gps = 17.5 dB TYP. (@ = 900 MHz)


    Original     		3SK231 3SK231 PDF

    2SC254

    Abstract: 3SK254
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK254 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS VDS = 3.5 V (Unit: mm) • Driving Battery 2.1±0.2 NF1 = 2.0 dB TYP. (f = 470 MHz)


    Original     		3SK254 2SC254 3SK254 PDF

    U94 marking

    Abstract: 3SK224
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK224 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Unit: mm ±8 (±10)*1 V Gate1 to Drain Voltage VG1D 18 V Gate2 to Drain Voltage VG2D


    Original     		3SK224 P10576EJ2V0DS00 TD-2265) U94 marking 3SK224 PDF

    3SK254

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK254 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS VDS = 3.5 V (Unit: mm) • Driving Battery 2.1±0.2 NF1 = 2.0 dB TYP. (f = 470 MHz)


    Original     		3SK254 3SK254 PDF

    transistor NEC 882 p

    Abstract: 3SK255
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Unit: mm (VDS = 3.5 V) V V Gate1 to Source Voltage VG1S ±8*1 Gate2 to Source Voltage VG2S ±8*1 V


    Original     		3SK255 transistor NEC 882 p 3SK255 PDF

    3SK230

    Abstract: U1A marking
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Unit: mm The Characteristic of Cross-Modulation is good. CM = 108 dBm (TYP.) @f = 470 MHz, GR = -30 dB


    Original     		3SK230 SC-61) 3SK230 U1A marking PDF

    3SK223

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • The Characteristic of Cross-Modulation is good. Unit: mm CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB


    Original     		3SK223 3SK223 PDF

    NEC k 1760

    Abstract: UAA 146 3SK230 UAA 2001
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Unit: mm The Characteristic of Cross-Modulation is good. CM = 108 dBµ (TYP.) @f = 470 MHz, GR = −30 dB


    Original     		3SK230 SC-61) NEC k 1760 UAA 146 3SK230 UAA 2001 PDF

    diode u1G

    Abstract: 3SK253
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK253 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS VDS = 3.5 V (Unit: mm) • Driving Battery V V Gate1 to Source Voltage VG1S ±8*1 Gate2 to Source Voltage


    Original     		3SK253 diode u1G 3SK253 PDF

    NEC k 2134 transistor

    Abstract: NEC k 2134 k 2134 nec TRANSISTOR nf 842 u79 transistor nf025 NF 817 3SK206 4009 not gate u-79
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK206 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES PACKAGE DIMENSIONS use as RF amplifier in UHF TV tuner. 0.02 pF TYP. 20 dB TYP. 1.1 dB TYP. in millimeters +0.2


    Original     		3SK206 NEC k 2134 transistor NEC k 2134 k 2134 nec TRANSISTOR nf 842 u79 transistor nf025 NF 817 3SK206 4009 not gate u-79 PDF

    3SK223

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • The Characteristic of Cross-Modulation is good. Unit: mm CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB


    Original     		3SK223 3SK223 PDF

    3SK252

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK252 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS VDS = 3.5 V (Unit: mm) NF1 = 2.0 dB TYP. (f = 470 MHz) 2 GPS = 19.0 dB TYP. (f = 470 MHz)


    Original     		3SK252 3SK252 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD PACKAGE DIMENSIONS FEATURES • The Characteristic of Cross-Modulation is good. CM = 101 dB n TYP. @ f = 470 MHz,


    OCR Scan     		3SK223 470MHz) PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK176A RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • High Power Gain: G ps • Low Noise Figure NF = 2.0 dB TYP. f = 470 MHz Automatically Mounting:


    OCR Scan     		3SK176A PDF

    U94 marking

    Abstract: 3SK22 TD226 3SK224 U94
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK224 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise Figure: NF = 1.8 dB TYP. f = 900 MHz • High Power Gain: G ps •


    OCR Scan     		3SK224 U94 marking 3SK22 TD226 3SK224 U94 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK254 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Low V dd Use • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. f = 470 MHz


    OCR Scan     		3SK254 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz • High Power Gain G ps = 17.5 dB TYP. (@ = 900 MHz)


    OCR Scan     		3SK231 SC-61) PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz High Power Gain Gps PACKAGE DIMENSIONS (Unit: mm) = 17.5 dB TYP. (@ = 900 MHz)


    OCR Scan     		3SK231 SC-61) PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK252 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low V dd Use • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. f = 470 MHz • High Power Gain


    OCR Scan     		3SK252 PDF

    3SK242

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK242 RF AMPLIFIER AND MIXER FOR VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low Noise Figure : NF = 1.3 dB TYP. • High Power Gain : G Ps = 24 dB TYP. f = 200 MHz


    OCR Scan     		3SK242 3SK242-T1 3SK242-T2 PDF

    P10-58

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS The Characteristic of Cross-Modulation is good. Unit: mm CM = 108 dB // (TYP.) @ f = 470 MHz, G r = -3 0 dB


    OCR Scan     		3SK230 SC-61) P10-58 PDF

    TRANSISTOR D 2398

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS = 23.0 dB TYP. @ = 900 MHz • High Power Gain G Ps • Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz)


    OCR Scan     		3SK134B TRANSISTOR D 2398 PDF