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    TRANSISTOR P50 Search Results

    TRANSISTOR P50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR P50 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ntcthermistor

    Abstract: V23990-P503-F tyco igbt module 35A tyco igbt module ntc-thermistor Fast Recovery Bridge Rectifier, 35A, 600V ntcthermistor 1 ntc-widerstand transistor 390 P502
    Text: Targetdatasheet P500 fast PACK 0 H Version 05/02 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung


    Original     		-100A/ms -200A/ms D-81359 ntcthermistor V23990-P503-F tyco igbt module 35A tyco igbt module ntc-thermistor Fast Recovery Bridge Rectifier, 35A, 600V ntcthermistor 1 ntc-widerstand transistor 390 P502 PDF

    tyco igbt

    Abstract: THERMISTOR NTC 1100 ohm
    Text: V23990-P500-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Kollektor-Dauergleichstrom


    Original     		V23990-P500-F D81359 RT/R25 tyco igbt THERMISTOR NTC 1100 ohm PDF

    tyco igbt

    Abstract: V23990-P502-F NTC 150 ohm tyco igbt 214
    Text: V23990-P502-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Kollektor-Dauergleichstrom


    Original     		V23990-P502-F 100Rgon D81359 RT/R25 tyco igbt V23990-P502-F NTC 150 ohm tyco igbt 214 PDF

    tyco igbt

    Abstract: V23990-P503-F THERMISTOR NTC 1100 ohm break resistor in igbt igbt tyco 270 IGBT tyco
    Text: V23990-P503-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung


    Original     		V23990-P503-F D81359 RT/R25 tyco igbt V23990-P503-F THERMISTOR NTC 1100 ohm break resistor in igbt igbt tyco 270 IGBT tyco PDF

    tyco igbt

    Abstract: igbt tyco V23990-P501-F
    Text: V23990-P501-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung


    Original     		V23990-P501-F 100Rgon D81359 RT/R25 tyco igbt igbt tyco V23990-P501-F PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    XC6SLX16-CSG324

    Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
    Text: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller


    Original     		DS695 CH-7301 XC6SLX16-CSG324 ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL PDF

    sf 128 transistor

    Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
    Text: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.


    Original     		SC73P2602 SC73P2602 SC73C16 sf 128 transistor TRANSISTOR SF 128 Triode 8050 marking P53 transistor ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47 PDF

    p504a

    Abstract: 11-10C1C TLP504A
    Text: TLP504A,-2 GaAs IRED a PHOTO-TRANSISTOR T L P S 0 4 A U nit in mm PROGRAMMABLE CONTROLLERS TLP504A AC/DC-INPUT MODULE W eight : 0.54g SOLID STATE RELAY The TOSHIBA TLP504A and TLP504A-2 consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode.


    OCR Scan     		TLP504A TLP504A-2 2500Vrms UL1577, E67349 p504a 11-10C1C PDF

    p504a

    Abstract: LB-10 GA NANA TLP504A TA525 E67349 TLP504
    Text: TRANSISTOR COUPLER GZ3 TLP504A INFRARED LE D +P H O TO TRANSISTOR TLP504A HAS TUO CHANNELS FOP. HIGH DENSITY APPLICATIONS. 8 7 a s m m m r ti THIS Ufi IT IS A 8-LEAO OtP PACKAGE. =a . OATA LINE ISOLATION . TELEPHONE SIGNAL COUPLING IP 111 Ili lili . LIME/CABLE RECEIVER


    OCR Scan     		TLP504A TLP504A Ic/If50Z E67349 P504A TaS25Â LB-10 GA NANA TA525 E67349 TLP504 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P PDF

    idq10

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P CGHV22200-TBions idq10 PDF

    CGHV22200

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P CGHV22200-TBions PDF

    P50N02LS

    Abstract: No abstract text available
    Text: P50N02LS N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-263 D2PAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 12mΩ 55A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		P50N02LS O-263 P50N02LS" MAY-24-2001 P50N02LS PDF

    SEM 2005

    Abstract: P5002CMG
    Text: P5002CMG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM SOT-23 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 20 50.8mΩ 3A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		P5002CMG OT-23 Mar-18-2005 SEM 2005 P5002CMG PDF

    P50N02LD

    Abstract: No abstract text available
    Text: P50N02LD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 D PAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 12mΩ 55A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		P50N02LD O-252 P50N02LD" MAY-24-2001 P50N02LD PDF

    P50N03LD

    Abstract: Niko Semiconductor
    Text: P50N03LD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 DPAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 27 12mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		P50N03LD O-252 Dec-10-2002 P50N03LD Niko Semiconductor PDF

    p50n03ld

    Abstract: P50N03LDG TO252 20A18 dpak code SM-150 diode NIKO-SEM Field Effect Transistor N-Channel Enhancement-Mode Power Field-Effect transistor Niko
    Text: N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P50N03LDG TO-252 DPAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 27 12mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		P50N03LDG O-252 Temperature04 SEP-22-2004 p50n03ld P50N03LDG TO252 20A18 dpak code SM-150 diode NIKO-SEM Field Effect Transistor N-Channel Enhancement-Mode Power Field-Effect transistor Niko PDF

    P50N06

    Abstract: SMP60N06-18 TRANSISTOR p50n06 SMP60N06 C0530 SMP60 siliconix SMP60N06-18
    Text: Tem ic SMP60N06-18 Siliconix N-Channel Enhancement-Mode Transistor, 18-mQ ros on 175 °C Maximum Junction Temperature3 Product Summary V DS (V ) •'DS(on) ( Q ) ID (A ) 60 0.018 60 See lower-cost version: SU P50N06-18 TO-22QAB o ■Jt D R A IN co n n ected to TAB


    OCR Scan     		SMP60N06-18 18-mQ P50N06-18 O-22QAB P-36737--Rev. P50N06 SMP60N06-18 TRANSISTOR p50n06 SMP60N06 C0530 SMP60 siliconix SMP60N06-18 PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    MX0912B350Y

    Abstract: No abstract text available
    Text: 7=:3 3 —/s ’ Data sheet status Preliminary specification date of Issue June 1992 MX0912B350Y NPN Silicon planar epitaxial microwave power transistor SbE D PHILIPS INTERNATIONAL • 711DûEb ÜDHb3SM DESCRIPTION APPLICATION FEATURES • Interdigitated structure; high


    OCR Scan     		MX0912B350Y 7110A2b ampl95 T-33-15 MX0912B350Y 711D6Eb D04b3L PDF

    Untitled

    Abstract: No abstract text available
    Text: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2


    Original     		CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P PDF

    hexadecimal to 7-segment LED display module

    Abstract: P55 MOSFET which is used in inverter wiring 7-segment LED to decoder converted display port HDMI tps603a HD74HC139 HD74LS240 4 hexadecimal to 7-segment LED display module
    Text: APPLICATION NOTE H8/300H Tiny Series Connecting a Photo Transistor Introduction A phototransistor is connected to the analog input pin and the results of A/D conversion are displayed on the 7-segment LEDs. Target Device H8/36014 Contents 1. Specifications . 2


    Original     		H8/300H H8/36014 REJ06B0119-0100Z/Rev hexadecimal to 7-segment LED display module P55 MOSFET which is used in inverter wiring 7-segment LED to decoder converted display port HDMI tps603a HD74HC139 HD74LS240 4 hexadecimal to 7-segment LED display module PDF

    TRANSISTOR p50

    Abstract: p13 transistor P41 transistor transistor p13 P40 transistor p21 transistor transistor P32 25 p23 transistor transistor p31 transistor p11
    Text: eSHP170COB Application Notes eSHP170COB 1. eSHP170COB Diagram: Connect DC Power to this connector Typical Value: 22p DAC Output ROSC (Typical: 100KΩ) Crystal: 2MHz Use this resistor to adjust bias current, current limitation, or to correct voice distortion with transistor when the


    Original     		eSHP170COB eSHP170COB eSHP170 eSHP170 AP-eSH-0005 TRANSISTOR p50 p13 transistor P41 transistor transistor p13 P40 transistor p21 transistor transistor P32 25 p23 transistor transistor p31 transistor p11 PDF