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    TRANSISTOR P50N06 Search Results

    TRANSISTOR P50N06 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR P50N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    p50n06

    Abstract: TRANSISTOR p50n06 transistor bc337 AN964 Mosfet P50N06 1N4148 BC337 LPR30 LT1585 bc337 transistor
    Text: AN964 APPLICATION NOTE VERY FAST LOAD TRANSIENT RESPONSE WITH THE NEW LPR30 APPLICATION INTRODUCTION Some applications requires high performances power supply characteristics in terms of fast recover to properly work. In particular it happen in the sequential system, where if an unexpected and high current


    Original     		PDF AN964 LPR30 LT1585 p50n06 TRANSISTOR p50n06 transistor bc337 AN964 Mosfet P50N06 1N4148 BC337 bc337 transistor

    P50N06

    Abstract: 1N4148 AN964 BC337 LPR30 LT1585 TRANSISTOR p50n06
    Text: AN964 APPLICATION NOTE VERY FAST LOAD TRANSIENT RESPONSE WITH THE NEW LPR30 APPLICATION INTRODUCTION Some applications requires high performances power supply characteristics in terms of fast recover to properly work. In particular it happen in the sequential system, where if an unexpected and high current


    Original     		PDF AN964 LPR30 LT1585 P50N06 1N4148 AN964 BC337 TRANSISTOR p50n06

    P50N06

    Abstract: SMP60N06-18 TRANSISTOR p50n06 SMP60N06 C0530 SMP60 siliconix SMP60N06-18
    Text: Tem ic SMP60N06-18 Siliconix N-Channel Enhancement-Mode Transistor, 18-mQ ros on 175 °C Maximum Junction Temperature3 Product Summary V DS (V ) •'DS(on) ( Q ) ID (A ) 60 0.018 60 See lower-cost version: SU P50N06-18 TO-22QAB o ■Jt D R A IN co n n ected to TAB


    OCR Scan     		PDF SMP60N06-18 18-mQ P50N06-18 O-22QAB P-36737--Rev. P50N06 SMP60N06-18 TRANSISTOR p50n06 SMP60N06 C0530 SMP60 siliconix SMP60N06-18