4 npn transistor ic 14pin
Abstract: 8 npn transistor ic 14pin C10535E UPA102G
Text: DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA102B: Superior thermal dissipation due to studded 14-pin ceramic package
|
Original
|
PA102
PA102B:
14-pin
PA102G:
PA102
4 npn transistor ic 14pin
8 npn transistor ic 14pin
C10535E
UPA102G
|
PDF
|
4 npn transistor ic 14pin
Abstract: MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6
Text: DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA101B: Superior thermal dissipation due to studded 14-pin ceramic package
|
Original
|
PA101
PA101B:
14-pin
PA101G:
PA101B-E1
4 npn transistor ic 14pin
MIL GRADE TRANSISTOR ARRAY
C10535E
Silicon Bipolar Transistor Q6
MICRO-X TRANSISTOR MARK Q6
|
PDF
|
SS TRANSISTOR
Abstract: No abstract text available
Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features 8-Pin SOP • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small
|
Original
|
TC120
600mA
300kHz
TC120503EHA
TC120303EHA
D-81739
DS21365B-page
SS TRANSISTOR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RN1973 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1973 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (6-pin) package
|
Original
|
RN1973
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RN1973 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1973 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (6-pin) package
|
Original
|
RN1973
|
PDF
|
RN1973
Abstract: No abstract text available
Text: RN1973 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1973 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (6-pin) package
|
Original
|
RN1973
RN1973
|
PDF
|
4 npn transistor ic 14pin
Abstract: C10535E PA103 lowest noise audio NPN transistor
Text: DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS:
|
Original
|
PA103
PA103B:
PA103G:
14-pin
PA103
4 npn transistor ic 14pin
C10535E
lowest noise audio NPN transistor
|
PDF
|
RN1673
Abstract: No abstract text available
Text: RN1673 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1673 Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm • Two devices are incorporated into a Super-Mini (6 pin) package
|
Original
|
RN1673
RN1673
|
PDF
|
RN1972FS
Abstract: RN1973FS RN2972FS RN2973FS 1FS6
Text: RN1972FS,RN1973FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1972FS,RN1973FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into a fine pitch small mold (6-pin) package
|
Original
|
RN1972FS
RN1973FS
RN2972FS,
RN2973FS
RN1973FS
RN2972FS
RN2973FS
1FS6
|
PDF
|
STC403
Abstract: AUK Transistor transistor stc403
Text: STC403 NPN Silicon Transistor Features • Power Transistor General Purpose application • Low saturation voltage : VCE SAT =0.4V Typ. • High Voltage : VCEO=60V Min. PIN Connection 1 2 3 TO-220F-3L Ordering Information Type NO. Marking Package Code STC403
|
Original
|
STC403
O-220F-3L
SDB20D45
KSD-T0O017-002
STC403
AUK Transistor
transistor stc403
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RN1972FS,RN1973FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1972FS,RN1973FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into a fine pitch small mold (6-pin) package
|
Original
|
RN1972FS
RN1973FS
RN2972FS,
RN2973FS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STC403 NPN Silicon Transistor Features • Power Transistor General Purpose application • Low saturation voltage : VCE SAT =0.4V Typ. • High Voltage : VCEO=60V Min. PIN Connection 1 2 3 TO-220F-3L Ordering Information Type NO. Marking Package Code STC403
|
Original
|
STC403
O-220F-3L
SDB20D45
KSD-T0O017-003
|
PDF
|
4N49
Abstract: No abstract text available
Text: 66168 Mii PROTON RADIATION TOLERANT OPTOCOUPLER Pin-for-Pin Replacement for 4N49 OPTOELECTRONIC PRODUCTS DIVISION Features: Applications: • • • • • • • • • • High Reliability Base lead provided for conventional transistor biasing Rugged package
|
Original
|
MIL-PRF-19500/548
4N49
|
PDF
|
JANTXV4N24U
Abstract: JANTX4N22U JANTX4N24U 4N22U 4N23U 4N24U JAN4N22U JAN4N23U JAN4N24U
Text: 4N22U 4N23U 4N24U 6 PIN LCC OPTOCOUPLERS OPTOELECTRONIC PRODUCTS DIVISION 05/29/03 Features: • MIL-PRF-19500/486 Qualified • Base lead provided for conventional transistor biasing • High gain, high voltage transistor • Miniature package saves circuit board area
|
Original
|
4N22U
4N23U
4N24U
MIL-PRF-19500/486
4N22U,
4N23U
4N24U
JANTXV4N24U
JANTX4N22U
JANTX4N24U
4N22U
JAN4N22U
JAN4N23U
JAN4N24U
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: RN47A1 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A1 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package.
|
Original
|
RN47A1
RN1110F
0062g
RN2110F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4N22U 4N23U 4N24U 6 PIN LCC OPTOCOUPLERS OPTOELECTRONIC PRODUCTS DIVISION 05/29/03 Features: • MIL-PRF-19500/486 Qualified • Base lead provided for conventional transistor biasing • High gain, high voltage transistor • Miniature package saves circuit board area
|
Original
|
4N22U
4N23U
4N24U
MIL-PRF-19500/486
4N22U,
4N23U
4N24U
|
PDF
|
JANTX4N24U
Abstract: JANTXV4N24U 4N22U 4N23U 4N24U JAN4N22U JAN4N23U JAN4N24U JANTX4N22U
Text: 4N22U 4N23U 4N24U 6 PIN LCC OPTOCOUPLERS OPTOELECTRONIC PRODUCTS DIVISION 05/29/03 Features: • MIL-PRF-19500/486 Qualified • Base lead provided for conventional transistor biasing • High gain, high voltage transistor • Miniature package saves circuit board area
|
Original
|
4N22U
4N23U
4N24U
MIL-PRF-19500/486
4N22U,
4N23U
4N24U
JANTX4N24U
JANTXV4N24U
4N22U
JAN4N22U
JAN4N23U
JAN4N24U
JANTX4N22U
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RN1673 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1673 Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm • Two devices are incorporated into a Super-Mini (6 pin) package
|
Original
|
RN1673
|
PDF
|
RN1110F
Abstract: RN2110F RN47A1
Text: RN47A1 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A1 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package.
|
Original
|
RN47A1
RN1110F
0062g
RN2110F
RN1110F
RN2110F
RN47A1
|
PDF
|
4n49 OPTOCOUPLER
Abstract: TRANSISTOR REPLACEMENT GUIDE proton optocoupler 66168 66168-300 66168-105 4N49 4N49 JANTX
Text: 66168 Mii PROTON RADIATION TOLERANT OPTOCOUPLER Pin-for-Pin Replacement for 4N49 OPTOELECTRONIC PRODUCTS DIVISION Features: Applications: • • • • • • • • • • High Reliability Base lead provided for conventional transistor biasing Rugged package
|
Original
|
MIL-PRF-19500/548
JANT001
4n49 OPTOCOUPLER
TRANSISTOR REPLACEMENT GUIDE
proton
optocoupler 66168
66168-300
66168-105
4N49
4N49 JANTX
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> DESCRIPTION PIN CONFIGURATION FEATURES > APPLICATION Package type CIRCUIT DIAGRAM FUNCTION The seven circuits share the VCC and GND. Unit ABSOLUTE MAXIMUM RATINGS Unless otherwise noted, Ta = –20 ~ +75°C Symbol
|
Original
|
|
PDF
|
UPA102G
Abstract: transistor PACKAGE PIN DIAGRAM
Text: UPA102B UPA102G TRANSISTOR ARRAY FEATURES CONNECTION DIAGRAM • TW O BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hFE LINEARITY • TW O PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded 14-pin ceram ic package
|
OCR Scan
|
UPA102B
UPA102G
UPA102B:
14-pin
UPA102G:
UPA102B
UPA102B/G
UPA102G
transistor PACKAGE PIN DIAGRAM
|
PDF
|
Transistor Array differential amplifier
Abstract: transistor array high speed G141C UPA102G
Text: UPA102B UPA102G TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hre LINEARITY • TWO PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded 14-pin ceramic package
|
OCR Scan
|
UPA102B
UPA102G
UPA102B:
14-pin
UPA102G:
UPA102B
UPA102B/G
Transistor Array differential amplifier
transistor array high speed
G141C
UPA102G
|
PDF
|
optocoupler 66168
Abstract: 66168-105
Text: 66168 Features: Applications: • • • • • • • • • • mn - PROTON RADIATION TOLERANT OPTOCOUPLER Pin-for-Pin Replacement for 4N49 High Reliability Base lead provided for conventional transistor biasing Rugged package Stability over wide temperature
|
OCR Scan
|
MIL-PRF-19500/548
optocoupler 66168
66168-105
|
PDF
|