Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR PACKAGE- MAX RATINGS OF T05 Search Results

    TRANSISTOR PACKAGE- MAX RATINGS OF T05 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH8R316MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -90 A, 0.0064 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH3R10AQM Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 120 A, 0.0031 Ω@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR PACKAGE- MAX RATINGS OF T05 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original
    PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    LM194

    Abstract: LM194 NPN Monolithic Transistor Pair 5962-8777701XA LM194H supermatch pair
    Text: MICROCIRCUIT DATA SHEET Original Creation Date: 09/13/95 Last Update Date: 03/08/01 Last Major Revision Date: 01/30/01 MNLM194-X REV 0A0 SUPERMATCH PAIR General Description The LM194 is a junction isolated ultra well-matched monolithic NPN transistor pair with an


    Original
    PDF MNLM194-X LM194 H06CRE 200DIA P000477A LM194H M0001690 LM194 NPN Monolithic Transistor Pair 5962-8777701XA LM194H supermatch pair

    t05 package transistor pin configuration

    Abstract: Zener diode 1N4148 ZENER 1N4148 negative temperature coefficient devices 1n4148 1n4148 die chip 1N4148 chip 1N4148 MARKING A2 1N4148 tempco 1n4148 zener diode Low Noise Zener Diode
    Text: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES DESCRIPTION n The LTZ1000 and LTZ1000A are ultra-stable temperature controllable references. They are designed to provide 7V outputs with temperature drifts of 0.05ppm/°C, about 1.2 VP-P of noise and long-term stability of 2μV/√kHr.


    Original
    PDF LTZ1000/LTZ1000A LTZ1000 LTZ1000A 05ppm/ LM399 20VRMS LT1021 LT1236 t05 package transistor pin configuration Zener diode 1N4148 ZENER 1N4148 negative temperature coefficient devices 1n4148 1n4148 die chip 1N4148 chip 1N4148 MARKING A2 1N4148 tempco 1n4148 zener diode Low Noise Zener Diode

    1N4148 tempco

    Abstract: ZENER 1N4148 1N414* zener Thermocouple 2N3904 LTZ1000 LM199 lt1021 Zener noise LTZ1000A LTZ1000ACH
    Text: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.2µVP-P Noise 2µV/√kHr Long Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized 400°C/W Thermal Resistance for LTZ1000A reduces insulation requirements


    Original
    PDF LTZ1000/LTZ1000A 05ppm/ LTZ1000A LM399 LT1021 LT1236 LT1389 800nA, 1N4148 tempco ZENER 1N4148 1N414* zener Thermocouple 2N3904 LTZ1000 LM199 lt1021 Zener noise LTZ1000ACH

    LT 0206

    Abstract: 1N4148 tempco 1N414* zener 2N3904 die marking h8 LM199
    Text: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES DESCRIPTION • The LTZ 1000 and LTZ1000A are ultra stable temperature controllable references. They are designed to provide 7V outputs with temperature drifts of 0.05ppm/°C, about 1.2µVP-P of noise and long term stability of 2µV/√k⎯ ⎯H⎯r.


    Original
    PDF LTZ1000/LTZ1000A LTZ1000A 05ppm/ LTZ1000 LM199, LM399 LT1021 LT1236 LT1389 LT 0206 1N4148 tempco 1N414* zener 2N3904 die marking h8 LM199

    zener diode 1n4148

    Abstract: diode zener 1N4148 h8 diode zener 1n4148 zener diode LM199
    Text: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES n n n n n n n n DESCRIPTION 1.2µVP-P Noise 2µV/√kHr Long-Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized 400°C/W Thermal Resistance for LTZ1000A Reduces Insulation Requirements


    Original
    PDF LTZ1000/LTZ1000A 05ppm/Â LTZ1000A LTZ1000 LT1236 LT1389 800nA, 10ppm/Â zener diode 1n4148 diode zener 1N4148 h8 diode zener 1n4148 zener diode LM199

    lt0412

    Abstract: h8 diode zener LTZ1000 ltz1000 application notes diode zener 1N4148 LM199
    Text: LTZ1000/LTZ1000A Ultra Precision Reference Features Description 1.2µVP-P Noise 2µV/√kHr Long-Term Stability n Very Low Hysteresis n 0.05ppm/°C Drift n Temperature Stabilized n 400°C/W Thermal Resistance for LTZ1000A Reduces Insulation Requirements n Specified for –55°C to 125°C Temperature Range


    Original
    PDF LTZ1000/LTZ1000A 05ppm/ LTZ1000A LTZ1000 800nA, 10ppm/ 650nVP-P lt0412 h8 diode zener ltz1000 application notes diode zener 1N4148 LM199

    RF POWER TRANSISTOR NPN 3GHz

    Abstract: NPN marking MCs 1741 transistor equivalent table BGB540-Chip BFP540 spice
    Text: P r e l i m in a r y d a t a s h e e t , B G B 5 4 0 , A u g . 2 0 0 1 BGB 540 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-16 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original
    PDF D-81541 BGB540 BGB540 BFP540. GPS05605 RF POWER TRANSISTOR NPN 3GHz NPN marking MCs 1741 transistor equivalent table BGB540-Chip BFP540 spice

    MTL4N22

    Abstract: static characteristics of optocoupler optocoupler 5V OPTOCOUPLER DSA0019619 optocoupler C 837
    Text: MTL4N22 MTL4N23 MTL4N24 SINGLE CHANNEL OPTOCOUPLER Features: • • • • • Applications: Overall current gain … 1.5 typical Base lead provided for conventional biasing Rugged package High gain, high voltage transistor +1kV electrical isolation transistor


    Original
    PDF MTL4N22 MTL4N23 MTL4N24 MTL4N22-4 MTL4N22, MTL4N24 MIL-PRF-19500 MTL4N22 MTL4N23 static characteristics of optocoupler optocoupler 5V OPTOCOUPLER DSA0019619 optocoupler C 837

    BFP420 application notes

    Abstract: BFP420 BGB420 bgb420 application note GPS05605 GMA marking RF NPN power transistor 2.5GHz
    Text: BGB420, Nov. 2000 BGB 420 Active Biased Transistor MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2000-11-28 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2000.


    Original
    PDF BGB420, D-81541 BGB420 BGB420 BFP420. GPS05605 BFP420 application notes BFP420 bgb420 application note GPS05605 GMA marking RF NPN power transistor 2.5GHz

    BR 8050

    Abstract: BFP420 application notes SOT343 marking 0 mmic t502 6 CHIP T502 P 414 rf transistor s-parameter RF POWER TRANSISTOR NPN BR 8050 D CHIP T502 S BGB420
    Text: BGB420, Aug. 2001 BGB 420 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2001


    Original
    PDF BGB420, D-81541 BGB420 BGB420 BFP420. GPS05605 BR 8050 BFP420 application notes SOT343 marking 0 mmic t502 6 CHIP T502 P 414 rf transistor s-parameter RF POWER TRANSISTOR NPN BR 8050 D CHIP T502 S

    BFP540

    Abstract: ma 8920 BGB540 GPS05605 T513 INFINEON transistor marking s-parameter RF POWER TRANSISTOR NPN S11 INFINEON T0559 69c3
    Text: Data sheet, BGB540, Sept. 2002 BGB540 Active Biased RF Transistor MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-09-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2002.


    Original
    PDF BGB540, BGB540 D-81541 BGB540 BFP540. GPS05605 BFP540 ma 8920 GPS05605 T513 INFINEON transistor marking s-parameter RF POWER TRANSISTOR NPN S11 INFINEON T0559 69c3

    BFP540

    Abstract: Transistor BFP540 BGB540 GPS05605 T0559
    Text: P r e l i m in a r y d a t a s h e e t , B G B 5 4 0 , D e c . 2 0 0 0 y BGB 540 li m in ar Active Biased Transistor P re MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2000-12-04 Published by Infineon Technologies AG,


    Original
    PDF D-81541 BGB540 BGB540 BFP540. GPS05605 BFP540 Transistor BFP540 GPS05605 T0559

    CHIP T502 S

    Abstract: JS 08321 BR 8050 CHIP T502 P BFP420 BGB420 GPS05605 T502 RF Transistor s-parameter s-parameter RF POWER TRANSISTOR NPN
    Text: BGB420, Aug. 2001 BGB 420 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2001


    Original
    PDF BGB420, D-81541 BGB420 BGB420 BFP420. GPS05605 CHIP T502 S JS 08321 BR 8050 CHIP T502 P BFP420 GPS05605 T502 RF Transistor s-parameter s-parameter RF POWER TRANSISTOR NPN

    ic 7912

    Abstract: 7912 7912 ic datasheet DATA SHEET OF IC 7912 Ic D 1708 ag TRANSISTOR 7912 BGB550 SCT595 TRANSISTOR C 557 B transistor K 1352
    Text: P r e l i m i n a ry d a t a s h e e t , B G B 5 5 0 , J u ly 2 0 0 1 y BGB 550 li m in ar Mirror Biased Transistor P re MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-07-31 Published by Infineon Technologies AG,


    Original
    PDF D-81541 BGB550 10max ic 7912 7912 7912 ic datasheet DATA SHEET OF IC 7912 Ic D 1708 ag TRANSISTOR 7912 SCT595 TRANSISTOR C 557 B transistor K 1352

    2SK2228

    Abstract: Transistor 3202 1 A 60
    Text: TO SH IBA SDOSSO T05H IBA FIELD EFFECT TRANSISTOR 2SK2228 QQE33Ô3 447 SILICON N CHANNEL M OS TYPE L2-tt-MOSIV 2SK2228 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND M OTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm


    OCR Scan
    PDF QQE33Ã 2SK2228 T05HIBA O-22QAB O-220 50URCE O-220FL 00E3b43 O-220SM Transistor 3202 1 A 60

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MP4101 T05HIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M PZL 1 n 1 • V ■ ■ ■ ■ w ■ HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE. INDUSTRIAL APPLICATIONS Unit in mm INDUCTIVE LOAD SWITCHING.


    OCR Scan
    PDF T05HIBA MP4101

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MP4104 T05HIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P a 1 nj HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. 25.210.2


    OCR Scan
    PDF T05HIBA MP4104

    esp 9a

    Abstract: S1300 transistor
    Text: Wfipl mLftm HEW LETT PACKARD Optical R eflective Sensors Technical Data HEDS-1200 High Resolution Infrared Sensor HEDS-1300 Precision Resolution Sensor Features D escription • Focused Emitter and Detector in a Single Package • T05 Package • Binning of Sensors by


    OCR Scan
    PDF HEDS-1200 HEDS-1300 HEDS1300 esp 9a S1300 transistor

    SL2363C

    Abstract: dilmon CM10 SL2364 SL2364C 6 "transistor arrays" ic transistor package- max ratings of T05
    Text: SL2363C & SL2364C VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2363C and SL2364C are arrays of transistors internally connected to form a dual long-tailed pair with tail transistors. They are monolithic integrated circuits manufactured on a very high speed bipolar process which


    OCR Scan
    PDF SL2363C SL2364C SL2363C SL2364C SL2363 SL2364 200mW dilmon CM10 6 "transistor arrays" ic transistor package- max ratings of T05

    Untitled

    Abstract: No abstract text available
    Text: OPTEK Product Bulletin JANTX, JANTXV, 2N6989U January 1996 Surface Mount Quad NPN Transistor Type JANTX, JANTXV, 2N6989U Features Absolute Maximum Ratings T a = 2 5 ° C unless otherw ise noted • • • Collector-Base Voltage . 75 V


    OCR Scan
    PDF 2N6989U T05flO

    SL2364

    Abstract: SL2364C 6 "transistor arrays" ic transistor package- max ratings of T05 Monolithic Transistor Pair CM10 SL2363C dilmon
    Text: SL2363C & SL2364C VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2363C and SL2364C are arrays of transistors internally connected to form a dual long-tailed pair with tail transistors, They are monolithic integrated circuits manufactured on a very high speed bipolar process which


    OCR Scan
    PDF SL2363C SL2364C SL2363C SL2364C SL2363 SL2364 200mW 6 "transistor arrays" ic transistor package- max ratings of T05 Monolithic Transistor Pair CM10 dilmon

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


    OCR Scan
    PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent

    dilmon

    Abstract: No abstract text available
    Text: GEC PLESSEY SEMICONDS 31E D " • 37bfl525 OGllfi34 3 {Ai PLESSEY w S e m ic o n d u c to rs . SL2363C & SL2364C VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2363C and SL2364C are arrays of transistors internally connected to form a dual long-tailed pair with tail


    OCR Scan
    PDF 37bfl525 OGllfi34 SL2363C SL2364C SL2363C SL2364C SL2363 SL2364 dilmon