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    TRANSISTOR PH 618 Search Results

    TRANSISTOR PH 618 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR PH 618 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    j78 transistor

    Abstract: transistor j7 transistor 669 transistor j4 13MM PH1214-3L j4 transistor MICROWAVE TEST FIXTURE
    Text: an AMP company Radar Pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz PH=l214=3L Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors


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    PH1214-3L j78 transistor transistor j7 transistor 669 transistor j4 13MM PH1214-3L j4 transistor MICROWAVE TEST FIXTURE PDF

    EP-603 power supply

    Abstract: EP-613 power supply EP-613 EP 603 TR 505 tr 611 TR 610 tr 614 VS-507 EP-613 DC POWER SUPPLY
    Text: Digital Deflection Controller SDA 9064-5 Preliminary Data NMOS IC Features ● Pipeline processor structure controls deflection stages ● Raster alignment by keyboard or automatically ● Adaptable beam current compensation for picture height and width ● Protection input stops the exceeding


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    100-/120-Hz P-DIP-40-1 Q67100-H8382 EP-603 power supply EP-613 power supply EP-613 EP 603 TR 505 tr 611 TR 610 tr 614 VS-507 EP-613 DC POWER SUPPLY PDF

    12C TRANSISTOR

    Abstract: transistor j39 transistor J45
    Text: an AMP comnanv Radar Pulsed Power Transistor, 25W, lps Pulse, 10% Duty PHI21 4-25s 1.2 - 1.4 GHz v2.00 Features - - - ,320 NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


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    PHI21 4-25s l214-25M 12C TRANSISTOR transistor j39 transistor J45 PDF

    transistor 9163

    Abstract: lN914B lN914 PH1617-2 BIPOLAR M 846 m 32 ab transistor transistor 1555
    Text: Wireless Bipolar Power Transistor, 1.6 - 1.7 GHz 2W PH1617-2 v2.00 Features l l l l l l Designed for Linear Amplifier Applications Class AB: -33 dBc Typ 3rd IMD at 2 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching


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    PH1617-2 -55to transistor 9163 lN914B lN914 PH1617-2 BIPOLAR M 846 m 32 ab transistor transistor 1555 PDF

    Untitled

    Abstract: No abstract text available
    Text: Afa Avionics Pulsed Power Transistor PH 1090-80L Preliminary 80 Watts, 1030-1090 MHz, 250 us Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation


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    1090-80L PDF

    yb 0d

    Abstract: No abstract text available
    Text: Aß Avionics Pulsed Power Transistor PH 1090-400S Preliminary 400 Watts, 1030-1090 MHz, 10 [is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


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    1090-400S yb 0d PDF

    T-301-34

    Abstract: No abstract text available
    Text: Afa Avionics Pulsed Power Transistor PH 1090-150S Preliminary 150 Watts, 1030-1090 MHz, 10 us Pulse, 1% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration


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    1090-150S 5b4220S T-301-34 PDF

    Untitled

    Abstract: No abstract text available
    Text: A$A Avionics Pulsed Power Transistor PH 1090-30S Preliminary 30 Watts, 1030-1090 MHz, 10 |is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


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    1090-30S 5b422G5 GQG12D5 PDF

    Untitled

    Abstract: No abstract text available
    Text: A/jÙi Avionics Pulsed Power Transistor PH 1090-75S Preliminary 75 Watts, 1030-1090 MHz, 10 is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


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    1090-75S b42205 PDF

    Untitled

    Abstract: No abstract text available
    Text: Aß Avionics Pulsed Power Transistor PH 1090-15S Preliminary 15 Watts, 1030-1090 MHz, 10 jis Pulse, 1% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration


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    1090-15S 5b422D5 PDF

    lc125

    Abstract: No abstract text available
    Text: Aß Avionics Pulsed Power Transistor PH 1090-6S Preliminary 6 Watts, 1030-1090 MHz, 10 is Pulse, 1% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration


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    1090-6S Sb42ED5 lc125 PDF

    J-205

    Abstract: transistor j8 PH1600
    Text: Afa Satellite C om m unications Power Transistor PH 1600-7.5 7.5 Watts, 1.55-1.65 GHz Features • • • • • Outline Drawing CW Operation Internal Impedance Matching Common Base Configuration Multilayer Metal / Ceramic Package Gold Metallization System


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    PH1600-7 Sb422DS 00D12bS J-205 transistor j8 PH1600 PDF

    Untitled

    Abstract: No abstract text available
    Text: Afa Satellite Communications Power Transistor PH 1600-30 30 Watts, 1.55-1.65 GHz Features • • • • • Outline Drawing C W Operation Internal Impedance Matching Common Base Configuration Multilayer Metal / Ceramic Package Gold Metallization System Absolute Maximum Ratings at 25°C


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    TT50M ATC100A 5bM220S PDF

    Untitled

    Abstract: No abstract text available
    Text: Afa Iw V f Satellite C om m unications Power Transistor PH 1600-1.5 1.5 Watts, 1.55-1.65 GHz Features Outline Drawing • CW Operation • Internal Impedance Matching • Common Base Configuration • Multilayer Metal / Ceramic Package • Gold Metallization System


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    00012L PDF

    transistor 1548 b

    Abstract: transistor 1548 transistor D 1047
    Text: Satellite C om m unications Power Transistor PH 1600-14 14 Watts, 1.55-1.65 GHz Features • • • • • Outline Drawing CW Operation Internal Impedance Matching Common Base Configuration Multilayer Metal / Ceramic Package Gold Metallization System Absolute Maximum Ratings at 25°C


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    Curren-14 5b4220S 00012b? transistor 1548 b transistor 1548 transistor D 1047 PDF

    cl 740

    Abstract: tss405 PO65 7w RF POWER TRANSISTOR NPN PH1600
    Text: n,n/A-con p h asE D o ÜDDDSbô 1T7 • HA P T - 33-01 M /A -C O M PH I, IN C . 1742 CRENSHAW BLVD. TORRANCE, CALIFORNIA 90501 213 320-6160 TWX 910-349-6651 FAX 213-618-9191 M/A-COM PHI, INC. PRELIMINARY DATA SHEET BIPOLAR NPN RF POWER TRANSISTOR FEATURES


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    PH1600-6 Sb4250S 00DDS71 1600MHZ 21-Z12 470pF 015uF cl 740 tss405 PO65 7w RF POWER TRANSISTOR NPN PH1600 PDF

    712 transistor smd sot23

    Abstract: 33m ph diode smd transistor 718 diode PH 33m
    Text: Value Code Inductor ph Code .01 .012 .015 .018 000 Oil 001 009 ph Code pFID. .10 .12 .15 .18 010 012 015 018 _ _ . _ .022 002 .22 022 _ _ - _ .027 007 .27 027 - _ .033 003 .33 033 _ - - - .039 009 .39 039 . _ _ - _ .047 004 .47 047 _ _ - _ .056 005 .56 056


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    SX3512 SX5020 712 transistor smd sot23 33m ph diode smd transistor 718 diode PH 33m PDF

    Avantek YIG oscillator

    Abstract: AVANTEK, yig AV7201
    Text: Q avantek Multi-Octave YIG-Tuned Oscillators FEATURES • • • • Full 0.5 to 20 GHz Coverage Rugged Hermetic Packaging Reliable Thin-Fllm Construction ±0.05% to ±0.25% Tuning Linearity • 0° to +65°C Temperature Range DESCRIPTION to ±0.25% typically . The power output remains flat within 3.0


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    transistor bsw 67

    Abstract: transistor BD139 PH 71 BC547 BSR512 BCY883 BSW 68 transistor BC548 Transistor 2N2219A Transistor BSX45 PHILIPS PN2222A
    Text: Concise Catalogue 1996 P hilip s Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors GENERAL-PURPOSE LOW-FREQUENCY BIPOLAR TRANSISTORS ratings type num ber P,o. max. mW hpE @ min./max. (V) 'c max. (mA) BC107


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    BC107 BC10B BC140 BC141 BC337 BC337A BC338 BC368 BC517 BC546 transistor bsw 67 transistor BD139 PH 71 BC547 BSR512 BCY883 BSW 68 transistor BC548 Transistor 2N2219A Transistor BSX45 PHILIPS PN2222A PDF

    181945

    Abstract: No abstract text available
    Text: A fik k Coming Attractions M aann A M P c<o m p a n y Wireless Bipolar Power Transistor, 45W 1805-1880 MHz PH1819-45 Features • • • • • NPN Silicon Microwave Power Transistor Com m on Emitter Class AB O peration Internal Input and O utput Im pedance Matching


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    PH1819-45 181945 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    Untitled

    Abstract: No abstract text available
    Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 BUK541-60A/B PowerMOS transistor Logic level FET PHI L IP S I N T E R N A T I O N A L N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


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    BUK541-60A/B 711Dfl2fc, BUK541 T-39-09 711GfiEb PDF

    Untitled

    Abstract: No abstract text available
    Text: M fc c m m an A M P com pany Wireless Bipolar Power Transistor, 4W 1.78- 1.90 GHz PH1819-4N Features • • • • • • • • /i?b U8 4?> NPN Silicon M icrowave Power T ransistor D esign ed for Linear Am plifier A pplications Class AB: -34 dB c Typ 3rd IMD at 4 Watts PEP


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    PH1819-4N PDF

    B35AP

    Abstract: No abstract text available
    Text: Philips Sem iconductors bbS3S31 □OSISb'l T13 • APX NPN 4 GHz wideband transistor ^ Product specification ^ BFQ34T N AriER PHILIPS/PISCRETE b'lE P PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The


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    bbS3S31 BFQ34T ON4497) B35AP PDF