QW-R206-081
Abstract: marking C5 2SA1774 2SC4617 2SC4617L-AE3-R 2SC4617-AE3-R hFE is transistor
Text: UNISONIC TECHNOLOGIES CO., 2SC4617 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES 2 * Low Cob Cob=2.0pF typ * Complements the UTC 2SA1774 1 3 MARKING C5 SOT-23 *Pb-free plating product number: 2SC4617L PIN CONFIGURATION PIN NO. PIN NAME
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2SC4617
2SA1774
OT-23
2SC4617L
2SC4617-AE3-R
2SC4617L-AE3-R
QW-R206-081
marking C5
2SA1774
2SC4617
2SC4617L-AE3-R
hFE is transistor
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD. PZT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain . 1 SOT-223 *Pb-free plating product number:PZT5551L PIN CONFIGURATION PIN NO.
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PZT5551
OT-223
PZT5551L
PZT5551-AA3-R
PZT5551L-AA3-R
OT-223
QW-R207-007
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utc d1616a
Abstract: D1616A d1616 transistor d1616a TRANSISTOR D1616
Text: UNISONIC TECHNOLOGIES CO., 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 TO-92 *Pb-free plating product number: 2SD1616L/2SD1616AL PIN CONFIGURATION PIN NO.
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2SD1616/A
2SD1616L/2SD1616AL
2SD1616-T92-B
2SD1616L-T92-B
2SD1616-T92-K
2SD1616L-T92-K
2SD1616A-T92-B
2SD1616AL-T92-B
2SD1616A-T92-K
2SD1616AL-T92-K
utc d1616a
D1616A
d1616
transistor d1616a
TRANSISTOR D1616
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D882 TRANSISTOR
Abstract: transistor D882 datasheet D882 p TRANSISTOR D882 D882 D882 TRANSISTOR PIN D882 Q transistor "D882 p" d882 equivalent NPN TRANSISTOR D882
Text: D882 YOUDA TRANSISTOR Si NPN TRANSISTOR D882 DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 40V *Collector current up to 3A *High hFE linearity PIN CONFIGURATIONS PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25 PARAMETER SYMBOL Collector-Base Voltage
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Transistor B834
Abstract: No abstract text available
Text: B834 YOUDA TRANSISTOR SI PNP TRANSISTOR—B834 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= -60V *Collector current up to -3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage
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D2012
Abstract: No abstract text available
Text: D2012 YOUDA TRANSISTOR SI NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage
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D2012
D2012
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D880
Abstract: D880 TRANSISTOR transistor d880
Text: D880 YOUDA TRANSISTOR SI NPN TRANSISTOR—D880 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage
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transistor d2012
Abstract: D2012
Text: D2012 YOUDA TRANSISTOR Si NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage
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D2012
transistor d2012
D2012
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Untitled
Abstract: No abstract text available
Text: D882 YOUDA TRANSISTOR SI NPN TRANSISTOR—D882 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 40V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage
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Untitled
Abstract: No abstract text available
Text: A44 YOUDA TRANSISTOR SI NPN TRANSISTOR—A44 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 400V *Collector current up to 300mA *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage
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300mA
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Untitled
Abstract: No abstract text available
Text: A94 YOUDA TRANSISTOR Si PNP TRANSISTOR—A94 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= -400V *Collector current up to –300mA *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage
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-400V
300mA
-300V,
-10mA,
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transistor d2012
Abstract: d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012
Text: D2012 YOUDA TRANSISTOR Si NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage
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D2012
TRANSISTOR--D2012
transistor d2012
d2012 transistor
TRANSISTOR-D2012
D2012
transistor equivalent d2012
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b834
Abstract: Transistor B834
Text: B834 YOUDA TRANSISTOR Si PNP TRANSISTOR—B834 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= -60V *Collector current up to -3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage
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Untitled
Abstract: No abstract text available
Text: D882 YOUDA TRANSISTOR Si NPN TRANSISTOR—D882 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 40V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage
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5609 transistor
Abstract: transistor 5609 TRANSISTOR-5609 5609 npn transistor 5609 npn 5609 a/TRANSISTOR-5609
Text: 5609 YOUDA TRANSISTOR Si NPN TRANSISTOR—5609 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 25V *Collector current up to 1A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage
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TRANSISTOR--5609
5609 transistor
transistor 5609
TRANSISTOR-5609
5609 npn transistor
5609 npn
5609
a/TRANSISTOR-5609
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Untitled
Abstract: No abstract text available
Text: A44 YOUDA TRANSISTOR Si NPN TRANSISTOR—A44 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 400V *Collector current up to 300mA *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage
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300mA
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Untitled
Abstract: No abstract text available
Text: A94 YOUDA TRANSISTOR SI PNP TRANSISTOR—A94 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= -400V *Collector current up to –300mA *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage
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-400V
300mA
-300V,
-10mA,
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d880 transistor
Abstract: transistor D880
Text: D880 YOUDA TRANSISTOR Si NPN TRANSISTOR—D880 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage
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pin configuration transistor 2n4401
Abstract: 2N4401 NATIONAL SEMICONDUCTOR 2n4401 configuration 2N4401 - TRANSISTOR 2N4403 NATIONAL SEMICONDUCTOR
Text: 2N4401 Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Transistor for switching and amplifier applications. • As complementary type, the PNP transistor 2N4403 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.
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2N4401
2N4403
OT-23
MMBT4401.
2N4401
2N4401-BULK
2N4401-TAP
D-74025
14-Oct-04
pin configuration transistor 2n4401
2N4401 NATIONAL SEMICONDUCTOR
2n4401 configuration
2N4401 - TRANSISTOR
2N4403 NATIONAL SEMICONDUCTOR
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pin configuration NPN transistor 2n3906
Abstract: 2N3906BU 2N3906 2N3906 hie 2N3906 APPLICATION pin configuration pnp transistor 2n3906 2n3906-type transistor 2n3904
Text: 2N3906 Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor switching and amplifier applications. • As complementary type, the NPN transistor 2N3904 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.
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2N3906
2N3904
OT-23
MMBT3906.
2N3906
2N3906-BULK
2N3906-TAP
D-74025
21-Oct-04
pin configuration NPN transistor 2n3906
2N3906BU
2N3906 hie
2N3906 APPLICATION
pin configuration pnp transistor 2n3906
2n3906-type
transistor 2n3904
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors NPN general purpose transistor BC846W; BC847W; BC848W PIN CONFIGURATION FEATURES • S- mini package. n* n1 DESCRIPTION NPN transistor in a plastic SOT323 SC70 package. PINNING - SOT323 PIN Top view DESCRIPTION
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BC846W;
BC847W;
BC848W
OT323
MBC670
BC846AW:
BC846BW:
BC847W:
BC846W
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BC856CW
Abstract: BC856BW
Text: Product specification Philips Semiconductors BC856W; BC857W; BC858W PNP general purpose transistor PIN CONFIGURATION FEATURES • S- mini package. DESCRIPTION NPN transistor in a plastic SOT323 package. PINNING - SOT323 PIN DESCRIPTION 1 base 2 emitter 3 collector
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BC856W;
BC857W;
BC858W
OT323
BC856W:
BC856AW
BC856BW
BC857W:
BC857AW
BC856CW
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bcs47
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN general purpose transistor FEATURES BC846W; BC847W; BC848W PIN CONFIGURATION • S- mini package. DESCRIPTION NPN transistor in a plastic SOT323 package. e M BBOÌ2 PINNING - SOT323 PIN DESCRIPTION 1 base 2
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BC846W;
BC847W;
BC848W
OT323
MBC870
BC846W:
BC846AW
BC846BW
BC847W:
bcs47
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product sgee ification NPN general purpose transistor FEATURES BC817W; BC818W PIN CONFIGURATION • High current • S -m ini package. JBi_ EL 1 DESCRIPTION NPN transistor in a plastic SOT323 SC70 package. PINNING - SOT323 PIN 1 'op view
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BC817W;
BC818W
OT323
BC817-16W
BC817-25W
BC817-40W
BC817W
BC818W:
BC818-16W
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