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    TRANSISTOR Q 667 Search Results

    TRANSISTOR Q 667 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR Q 667 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diode marking MFW

    Abstract: MFW diode 95rr DIODE S3K ZW 13 diode YQB marking Marking jx Diode MFW B651 WQ marking
    Text: SPB80N10L!M SIPMOSTMPower-Transistor Product Summary Feature RQQ w RetI••J RU Ž Ie YQ b S 2H mfssj q VDS J smfshj rj syrtij Qtln hQj {j q qNupSWTNT 6<: ´H tuj wfyn sl yj ruj wfyzwj F{fqfshmj wfyj i ivP… t wfyj i@M fqtlj s2kwj j fhhtwin sl yt NJ H ;679>27276


    Original     		PDF SPB80N10L Diode marking MFW MFW diode 95rr DIODE S3K ZW 13 diode YQB marking Marking jx Diode MFW B651 WQ marking

    transistor k702

    Abstract: transistor k703 transistor k79 transistor k215 TRANSISTOR K550 K206 transistor Transistor k822 CN701 transistor k620 transistor k230
    Text: ORDER NO. CPD0603076C0 Notebook Computer CF-18 This is the Service Manual for the following areas. Z …for PCPE /CPE Model No. CF-18JHUZBZZ 2006 Matsushita Electric Industrial Co., Ltd. All rights reserved. Unauthorized copying and distribution is a violation of law.


    Original     		PDF CPD0603076C0 CF-18 CF-18JHUZBZZ K1MN04B00073 K1KA07BA0014 C0EBH0000457 C1DB00001351 XP0431200L UNR9113J0L transistor k702 transistor k703 transistor k79 transistor k215 TRANSISTOR K550 K206 transistor Transistor k822 CN701 transistor k620 transistor k230

    Untitled

    Abstract: No abstract text available
    Text: BSR17A _ SILICON PLANAR EPITAXIAL TRANSISTORS N-PTM silicon transistor in a m icro m in ia tu re plastic package intended fo r sw itching and linear applica tions in th ic k and th in -film circuits. Q U IC K R EF E R E N C E D A T A Collector-base voltage open e m itte r


    OCR Scan     		PDF BSR17A

    27e transistor

    Abstract: iSS TRANSISTOR bd277
    Text: P ow er Transistors File Number 667 HA RR IS S E M I C O N D S E C T O R BD277 27E D • 4 3 0 2 2 7 1 D02a].33 3 « H A S T - 3 3 - 2 -1 7-A, 70-W, Epitaxial-Base, Silicon P -N-P VERSAWATT Transistors For A pp lication s in Series and Shunt Regulators Features:


    OCR Scan     		PDF BD277 T0-220AB O-22QAB BD277 43G2271 QD2Q13S 27e transistor iSS TRANSISTOR

    BD277

    Abstract: 1754-3 92CS-I8007
    Text: G E SOLI D 01 STATE 3875081 G E SOLID STATE _ 3075061 01E 0017S4H D •T^ 17542 ~ 7 2/ Pro Electron Pow er Transistors ' File Number 667 BD277 7-A, 70-W, Epitaxial-Base, Silicon


    OCR Scan     		PDF GG1754H BD277 BD277 O-220AB 92CS-iaooi 92CS-i80i2 92CS-I8007 1754-3 92CS-I8007

    6676 transistor

    Abstract: 6676 PTC6677 TO-247 NPN SILICON POWER TRANSISTORS ptc 870 PTC6676
    Text: 02E 00 43 2 .Y.! 61 159 50 M IC R O S E M I C O R P / P O W E R ¿.-i 02 DE |T , 115^ 50 D 00DD435 ö T"- / 3 - / J pJQ 6676P PTC 6677P PTC 6678P |~ Power Technology Components POWERMODE III S E R IE S NPN SILICON POWER > TRANSISTOR 15 AMPERES O 400 VOLTS


    OCR Scan     		PDF 00DD435 6676P 6677P 6678P O-247 6676 transistor 6676 PTC6677 TO-247 NPN SILICON POWER TRANSISTORS ptc 870 PTC6676

    NPN power transistor 15A amperes 400 volt

    Abstract: PTC6674
    Text: V*. niCRO SEKi CORP/POIilER gg DE J h l l S T S D ODODMaü 1 | PTC 6674P PTC 6675P - f-'-i- V’ ‘.ïr=W - -S'; - V - v ; - - ••• • •:v -r,> -.v-.-iv.v •. v : / -V -V f. : • r , .- T E C H N O LO G Y Power Technology POWERMODE III SERIES


    OCR Scan     		PDF 6674P 6675P 400Volts O-247 NPN power transistor 15A amperes 400 volt PTC6674

    Untitled

    Abstract: No abstract text available
    Text: Order this document by MC33468/D MOTOROLA M C 33468 V ariable Frequency M icropow er S tep-up DC-DC Converter The MC33468 is a micropower ste p -u p switching voltage regulator, specifically designed for handheld and pager applications, to provide a regulated output voltage using a minimum of external parts. This device


    OCR Scan     		PDF MC33468/D MC33468 MC33468 T-23-5

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    L2 SOT-23-5

    Abstract: sot-23-5 marking cy motorola step down voltage regulator
    Text: Order this document by MC33468/D M M O TO R O LA V ariable Freq u en cy M icropow er Step -u p D C -D C C onverter The MC33468 is a micropower step-up switching voltage regulator, specifically designed for handheld and pager applications, to provide a regulated output voltage using a minimum of external parts. This device


    OCR Scan     		PDF MC33468/D MC33468 L2 SOT-23-5 sot-23-5 marking cy motorola step down voltage regulator

    10N100E

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TW 10N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TW 10N 100E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 10 AMPERES


    OCR Scan     		PDF 10N100E/D 340K-01 10N100E

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder th is docum ent by MTY10N1OOE/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M T Y IO N IO O E TMOS E-FET ™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T M O S P O W E R FET


    OCR Scan     		PDF MTY10N1OOE/D MTY10N100E/D

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 2-Phase Stepper-Motor Driver TLE 4728 Prelim inary Data Bipolar-IC Features • • • • • • • • • • 2 x 1 amp. full bridge outputs Integrated driver, control logic and current control chopper Fast free-wheeling diodes Max. supply voltage 45 V


    OCR Scan     		PDF P-DSO-24-1 Q6700-A9077

    SMPS 666

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Powerll/IOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Automotive applications, Switched Mode Power Supplies SMPS ,


    OCR Scan     		PDF BUK474-60H OT186A SMPS 666

    kbr 4.0M

    Abstract: TM 511720 TI 51173 transistor LC6523
    Text: Ordering number: EN%5117 CMOS LSI No. * 5117 LC6529N, 6529F, 6529L 4-Bit Microcomputer for Small-Scale Control Applications Preliminary Overview The LC6529N/F/L provides the basic architecture and instruction set of the Sanyo LC6500 Series of 4-bit single­


    OCR Scan     		PDF LC6529N, 6529F, 6529L LC6529N/F/L LC6500 LC6529F LC6529H. kbr 4.0M TM 511720 TI 51173 transistor LC6523

    BFQ42

    Abstract: SI 3105 A choke 663 transistor t07 BLW29 ferroxcube wideband hf choke
    Text: 711002t. Q0b31ôl G7Q BIPHIN bSE D BLW29 J PHILIPS V. INTERNATIONAL V.H.F. POW ER TRAN SISTO R N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power


    OCR Scan     		PDF 711002t. BLW29 BFQ42 7Z77686 7Z77587 SI 3105 A choke 663 transistor t07 BLW29 ferroxcube wideband hf choke

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    smd npn 2n2222

    Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
    Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.


    OCR Scan     		PDF 2PC1815L 2PC1815 10xx0. 7Z88986 smd npn 2n2222 bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200

    4728

    Abstract: No abstract text available
    Text: SIEMENS 2-Phase Stepper-Motor Driver TLE 4728 Preliminary Data Bipolar-IC Features • 2 x 1 amp. full bridge outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Max. supply voltage 45 V • Overvoltage cut-out


    OCR Scan     		PDF P-DSO-24-1 Q6700-A9077 4728

    BLX92A

    Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
    Text: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		PDF BLX92A BLX92A BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944

    Untitled

    Abstract: No abstract text available
    Text: . N AMER PHILIPS/DISCRETE 86D 01822 D DbE D bt.53131 DOlHObO □ 7" ~ 5 3 BLX93A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		PDF BLX93A tbS3T31

    Motorola transistors MRF 947

    Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
    Text: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,


    OCR Scan     		PDF

    M51143AL

    Abstract: No abstract text available
    Text: MITSUBISHI SOUND PROCESSORS M51143AL TAPE PROGRAM SELECTOR CIRCUIT DESCRIPTION The M51143AL is an integrated circuit designed for use as a tape program selector. PIN CONFIGURATION TOP VIEW 8 | Vcc It consists of a limiter amplifier, a signal detector circuit,


    OCR Scan     		PDF M51143AL M51143AL

    transistor tt 2222

    Abstract: 9 BJE 53 mj 1504 transistor BFQ42 mj 1504 BLW29 tt 2222 transistor l5
    Text: • bbSBTBl OOSTSflM ÔG7 H A P X N AtlER PHILIPS/DISCRETE BLW29 b*ÎE T> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. Because o f the high gain and excellent power


    OCR Scan     		PDF BLW29 BFQ42 bb531Bl 7Z77586 7Z77587 transistor tt 2222 9 BJE 53 mj 1504 transistor mj 1504 BLW29 tt 2222 transistor l5