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    TRANSISTOR Q101 Search Results

    TRANSISTOR Q101 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K819R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K809R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K504NU Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 30 V, 9.0 A, 0.0195 Ohm@10V, UDFN6B, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR Q101 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor marking DG

    Abstract: TRANSISTOR SMD MARKING CODE pa marking code DG SMD Transistor dg transistor smd NXP SMD TRANSISTOR MARKING CODE SMD transistor code 132 transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD CODE PACKAGE SOT363 marking code BV SMD Transistor
    Text: PUML1/DG 50 V, 200 mA NPN general-purpose transistor/ 100 mA NPN resistor-equipped transistor Rev. 01 — 14 July 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor and NPN Resistor-Equipped Transistor RET in one


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    OT363 SC-88) AEC-Q101 transistor marking DG TRANSISTOR SMD MARKING CODE pa marking code DG SMD Transistor dg transistor smd NXP SMD TRANSISTOR MARKING CODE SMD transistor code 132 transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD CODE PACKAGE SOT363 marking code BV SMD Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101


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    SMBT3904. SMBT3904PN SMBT3904UPN EHA07177 SMBT3904PN OT363 PDF

    SC74

    Abstract: SMBT3904 SMBT3904PN SMBT3904UPN 6C TRANSISTOR MARKING
    Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101


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    SMBT3904. SMBT3904PN SMBT3904UPN EHA07177 OT363 SC74 SMBT3904 SMBT3904PN SMBT3904UPN 6C TRANSISTOR MARKING PDF

    Marking Package Code TF

    Abstract: No abstract text available
    Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101


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    SMBT3904. SMBT3904PN SMBT3904UPN EHA07177 SMBT3904PN OT363 Marking Package Code TF PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBTA06UPN NPN / PNP Silicon AF Transistor Array • High breakdown voltage 4 • Low collector-emitter saturation voltage 3 5 2 6 • Two galvanic internal isolated NPN/PNP 1 Transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101


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    SMBTA06UPN EHA07177 PDF

    MARKING CODE CCB

    Abstract: infineon marking W1s marking code w1s SC74 SMBTA06UPN
    Text: SMBTA06UPN NPN / PNP Silicon AF Transistor Array • High breakdown voltage 4 • Low collector-emitter saturation voltage 3 5 2 6 • Two galvanic internal isolated NPN/PNP 1 Transistor in one package • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101


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    SMBTA06UPN EHA07177 MARKING CODE CCB infineon marking W1s marking code w1s SC74 SMBTA06UPN PDF

    MJD127G

    Abstract: No abstract text available
    Text: MJD122, NJVMJD122 NPN , MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR


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    MJD122, NJVMJD122 MJD127, NJVMJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD127G PDF

    Untitled

    Abstract: No abstract text available
    Text: MJD122, NJVMJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features SILICON POWER TRANSISTOR 8 AMPERES


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    MJD122, NJVMJD122T4G MJD127 2N6040â 2N6045 TIP120â TIP122 TIP125â TIP127 MJD122/D PDF

    NSVMUN5333

    Abstract: SMUN5311DW1T1G NSVMUN5333DW1T1G Transistor BFR 93
    Text: MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series Dual Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with


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    MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1GSeries MUN5311DW1T1G OT-363 MUN5311DW1T1/D NSVMUN5333 SMUN5311DW1T1G NSVMUN5333DW1T1G Transistor BFR 93 PDF

    MJD122

    Abstract: TIP125-TIP127 mjd122g
    Text: MJD122, NJVMJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR 8 AMPERES


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    MJD122, NJVMJD122T4G MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD122 mjd122g PDF

    Transistor BFR 93

    Abstract: No abstract text available
    Text: MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series Dual Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with


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    MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1Gâ MUN5311DW1T1G MUN5311DW1T1/D Transistor BFR 93 PDF

    transistor marking 7D

    Abstract: MUN5214DW1T1G SMUN5213DW1T1G transistor marking code 7e SOT363 MARKING CODE 7M SMUN5235DW1T1G
    Text: MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Preferred Devices Dual Bias Resistor Transistors http://onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with


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    MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1GSeries MUN5211DW1T1G OT-363 MUN5211DW1T1/D transistor marking 7D MUN5214DW1T1G SMUN5213DW1T1G transistor marking code 7e SOT363 MARKING CODE 7M SMUN5235DW1T1G PDF

    Untitled

    Abstract: No abstract text available
    Text: MUN5111DW1T1G Series, SMUN5111DW1T1G Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The Bias Resistor Transistor BRT contains a single transistor with a


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    MUN5111DW1T1G SMUN5111DW1T1G OT-363 MUN5111DW1T1/D PDF

    Ie 49 transistor

    Abstract: SMUN5312DW1T1G mun5335dw1t1g SMUN5330DW1T1G
    Text: MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series Preferred Devices Dual Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with


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    MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1GSeries MUN5311DW1T1G OT-363 MUN5311DW1T1/D Ie 49 transistor SMUN5312DW1T1G mun5335dw1t1g SMUN5330DW1T1G PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5658M3T5G, 2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board


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    2SC5658M3T5G, 2SC5658RM3T5G OT-723 inch/3000 2SC5658M3/D PDF

    NSBA113EDXV6T1

    Abstract: No abstract text available
    Text: NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


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    NSBA114EDXV6T1, NSBA114EDXV6T5 NSBA114EDXV6T1 OT-563 NSBA114EDXV6/D NSBA113EDXV6T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: PZT2222A, SPZT2222A NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.


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    PZT2222A, SPZT2222A PZT2907AT1 PZT2222AT1/D PDF

    Untitled

    Abstract: No abstract text available
    Text: PZT2907A PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. http://onsemi.com


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    PZT2907A OT-223 PZT2222AT1 AEC-Q101 PZT2907AT1/D PDF

    Untitled

    Abstract: No abstract text available
    Text: PZT2222A NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. Features


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    PZT2222A OT-223 PZT2907AT1 PZT2222AT1/D PDF

    Untitled

    Abstract: No abstract text available
    Text: BCP68T1G, SBCP68T1G NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.


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    BCP68T1G, SBCP68T1G BCP68T1/D PDF

    Untitled

    Abstract: No abstract text available
    Text: BCP68T1G NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features


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    BCP68T1G BCP69T1 BCP68T1/D PDF

    Untitled

    Abstract: No abstract text available
    Text: PZT2907AT1, SPZT2907AT1G Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount


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    PZT2907AT1, SPZT2907AT1G OT-223 PZT2222AT1 OT-223 PZT2907AT1/D PDF

    sot-223 body marking D K Q F

    Abstract: transistor P2F on semiconductor p2f SPZT2907AT1G p2F 45 sot-223 body marking A G
    Text: PZT2907AT1, SPZT2907AT1G Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount


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    PZT2907AT1, SPZT2907AT1G OT-223 PZT2222AT1 AEC-Q101 PZT2907AT1/D sot-223 body marking D K Q F transistor P2F on semiconductor p2f SPZT2907AT1G p2F 45 sot-223 body marking A G PDF

    Untitled

    Abstract: No abstract text available
    Text: b3b?254 Q101b32 TS7 • M O T b Order this data sheet by PZT651T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZT651T1 NPN Silicon Planar Epitaxial Transistor M o to ro la P referre d D evice This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer


    OCR Scan
    Q101b32 PZT651T1/D PZT651T1 OT-223 PZT751T1 PDF