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    TRANSISTOR Q33 Search Results

    TRANSISTOR Q33 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR Q33 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LT1185

    Abstract: transistor BD 424 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK diode 1334 106 6K tantalum capacitors
    Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Standard 5-Lead Packages Full Remote Sense


    Original     		PDF LT1185 LT1185 transistor BD 424 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK diode 1334 106 6K tantalum capacitors

    Untitled

    Abstract: No abstract text available
    Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Full Remote Sense Low Quiescent Current: 2.5mA


    Original     		PDF LT1185 O-220 LT1185 LT1129 200mA 400mV LT1175 500mA LT1585 LT1964

    LT1185CT

    Abstract: LT1185 LT1185C LT1185CQ LT1185I LT1185IQ LT1185M LT1185MK
    Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Full Remote Sense Low Quiescent Current: 2.5mA


    Original     		PDF LT1185 O-220 LT1185 LT1129 200mA 400mV LT1175 500mA LT1585 LT1964 LT1185CT LT1185C LT1185CQ LT1185I LT1185IQ LT1185M LT1185MK

    LT1185

    Abstract: LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK
    Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of an FET pass element with significantly less die area. High efficiency is maintained by using special


    Original     		PDF LT1185 LT1185 118500mA LT1120A LT1129 200mA 400mV LT1175 500mA LT1585 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK

    Untitled

    Abstract: No abstract text available
    Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of an FET pass element with significantly less die area. High efficiency is maintained by using special


    Original     		PDF LT1185 LT1185 LT1120A LT1129 200mA 400mV LT1175 500mA LT1585 1185fd

    LT1120A

    Abstract: lt1185ct 2A 12v Low Dropout Regulator 5-Lead Plastic DD Pak ltc Q input 220 ac output 30v dc 0.5a LT1185 LT1185C LT1185CQ LT1185I LT1185IT
    Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of a FET pass element with significantly less die area. High efficiency is maintained by using special


    Original     		PDF LT1185 LT1185 O-220 LT1120A LT1129 200mA 400mV LT1175 500mA LT1585 LT1120A lt1185ct 2A 12v Low Dropout Regulator 5-Lead Plastic DD Pak ltc Q input 220 ac output 30v dc 0.5a LT1185C LT1185CQ LT1185I LT1185IT

    marking code 1p

    Abstract: No abstract text available
    Text: 72QM2 R1Q3A7236ABG / R1Q3A7218ABG Series R1Q3A7236ABG R1Q3A7218ABG 72-Mbit QDR II SRAM 4-word Burst R10DS0176EJ0011 Rev. 0.11 2013.01.15 Description The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory


    Original     		PDF 72QM2 R1Q3A7236ABG R1Q3A7218ABG R1Q3A7218ABG 72-Mbit R1Q3A7236 152-word 36-bit R1Q3A7218 marking code 1p

    Untitled

    Abstract: No abstract text available
    Text: 72QM2 R1Q3A7236ABB / R1Q3A7218ABB Series R1Q3A7236ABB R1Q3A7218ABB 72-Mbit QDR II SRAM 4-word Burst R10DS0165EJ0011 Rev. 0.11 2013.01.15 Description The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory


    Original     		PDF 72QM2 R1Q3A7236ABB R1Q3A7218ABB R1Q3A7218ABB 72-Mbit R1Q3A7236 152-word 36-bit R1Q3A7218

    Untitled

    Abstract: No abstract text available
    Text: Datasheet R1Q3A4436RBG, R1Q3A4418RBG 144-Mbit QDR II SRAM 4-word Burst R10DS0141EJ0100 Rev.1.00 Jun 01, 2013 Description The R1Q3A4436RBG is a 4,194,304-word by 36-bit and the R1Q3A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor


    Original     		PDF R1Q3A4436RBG, R1Q3A4418RBG 144-Mbit R10DS0141EJ0100 R1Q3A4436RBG 304-word 36-bit R1Q3A4418RBG 608-word 18-bit

    Untitled

    Abstract: No abstract text available
    Text: Datasheet R1Q2A4436RBG, R1Q2A4418RBG 144-Mbit QDR II SRAM 2-word Burst R10DS0140EJ0100 Rev.1.00 Sep 02, 2013 Description The R1Q2A4436RBG is a 4,194,304-word by 36-bit and the R1Q2A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor


    Original     		PDF R1Q2A4436RBG, R1Q2A4418RBG 144-Mbit R10DS0140EJ0100 R1Q2A4436RBG 304-word 36-bit R1Q2A4418RBG 608-word 18-bit

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44324185B-A, 44324365B-A 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The μPD44324185B-A is a 2,097,152-word by 18-bit and the μPD44324365B-A is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor


    Original     		PDF PD44324185B-A, 44324365B-A 36M-BIT PD44324185B-A 152-word 18-bit PD44324365B-A 576-word 36-bit

    PD44324185BF5-E35-FQ1

    Abstract: No abstract text available
    Text: Datasheet PD44324185B-A μPD44324365B-A 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION R10DS0037EJ0100 Rev.1.00 Sep 10, 2010 Description The μPD44324185B-A is a 2,097,152-word by 18-bit and the μPD44324365B-A is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor


    Original     		PDF PD44324185B-A PD44324365B-A 36M-BIT R10DS0037EJ0100 PD44324185B-A 152-word 18-bit PD44324365B-A 576-word 36-bit PD44324185BF5-E35-FQ1

    Widlar

    Abstract: lm12 op amp 150W TRANSISTOR AUDIO AMPLIFIER 800W TRANSISTOR npn 800w inverter AN-446B frederiksen Three-Five Widlar AN-21 LM12
    Text: National Semiconductor Application Note 446B April 1998 Robert J. Widlar Apartado Postal 541 steady-state conditions increases guaranteed power ratings by several times when compared to older techniques. At the same time, it dramatically lowers the peak junction temperature with worst-case fault conditions.


    Original     		PDF

    600W TRANSISTOR AUDIO AMPLIFIER

    Abstract: Widlar h9301 pnp 150w darlington transistor to3 package 800W TRANSISTOR npn 800w inverter AN-446B LM12 446B C1995
    Text: National Semiconductor Application Note 446B 446B October 1987 Robert J Widlar Apartado Postal 541 Puerto Vallarta Jalisco Mexico Mineo Yamatake National Semiconductor Corp Santa Clara California Abstract The standard junction-isolated power process has been modified by the addition of polycrystalline-film resistors to solve the topological problems encountered in


    Original     		PDF 01-percent 600W TRANSISTOR AUDIO AMPLIFIER Widlar h9301 pnp 150w darlington transistor to3 package 800W TRANSISTOR npn 800w inverter AN-446B LM12 446B C1995

    pot core inductor

    Abstract: 2N33904 2N33904 transistor MBR140P RC4391N SP-Cap/ Polymer Aluminum Capacitors RC4190 RC4391 RV4391 Stackpole ferrite
    Text: www.fairchildsemi.com RC4391 Inverting and Step-Down Switching Regulator Features • High performance — High switch current — 375 mA High efficiency — 70% typically • Low battery detection capability • 8-lead mini-DIP or S.O. package • Versatile —


    Original     		PDF RC4391 RC4391 DS30004391 pot core inductor 2N33904 2N33904 transistor MBR140P RC4391N SP-Cap/ Polymer Aluminum Capacitors RC4190 RV4391 Stackpole ferrite

    2N33904

    Abstract: 2N33904 transistor pot core inductor 12 volt dc to 220 volt ac inverter schematic 2N3635 MOTOROLA NY TRANSISTOR MAKING LIST SP-Cap/ Polymer Aluminum Capacitors RC4190 RC4391 RV4391
    Text: Electronics Semiconductor Division RC4391 Inverting and Step-Down Switching Regulator Features • High performance — High switch current — 375 mA High efficiency — 70% typically • Low battery detection capability • 8-lead mini-DIP or S.O. package


    Original     		PDF RC4391 RC4391 DS20004391 2N33904 2N33904 transistor pot core inductor 12 volt dc to 220 volt ac inverter schematic 2N3635 MOTOROLA NY TRANSISTOR MAKING LIST SP-Cap/ Polymer Aluminum Capacitors RC4190 RV4391

    Operational Transconductance Amplifier pspice

    Abstract: transisTOR C124 c124 transistor transistor directory cdt660 OPA660 transistor c206 transistor c202 COPA660 DEM-OPA660-3GC
    Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


    Original     		PDF CG22DF2) Operational Transconductance Amplifier pspice transisTOR C124 c124 transistor transistor directory cdt660 OPA660 transistor c206 transistor c202 COPA660 DEM-OPA660-3GC

    2N33904

    Abstract: 2N33904 transistor Stackpole ferrite MBR140P 2N3635 MOTOROLA RM4391 2n3904 npn fairchild beta Dale Resistor 7501 1N914 RC4391
    Text: PRODUCT SPECIFICATION RC4391 Pin Descriptions Pin Assignments LBR 1 8 VFB Pin Number Pin Function Description LBD 2 7 VREF 1 Low Battery Resistor LBR CX 3 6 +VS 2 Low Battery Detector (LBD) 3 Timing Capacitor (CX) 4 Ground 5 External Inductor (LX) 6 +Supply Voltage (+VS)


    Original     		PDF RC4391 RV4391 RM4391 DS30004391 2N33904 2N33904 transistor Stackpole ferrite MBR140P 2N3635 MOTOROLA RM4391 2n3904 npn fairchild beta Dale Resistor 7501 1N914 RC4391

    transisTOR C124

    Abstract: Operational Transconductance Amplifier pspice c124 transistor cdt660 OPA660 transistor directory TR BC 548 TI 121 Transistor opa660 pspice transistor c202
    Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


    Original     		PDF

    schematic diagram tv sony 21 trinitron

    Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
    Text: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV


    Original     		PDF KV-EF34M80 RM-951 SCC-U28D-A NA324-M3 A80LPD10X) SBX3005-01 RM-951) schematic diagram tv sony 21 trinitron cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112

    IC AND GATE 7408

    Abstract: IC 7408 pin DIAGRAM OF IC 7408 IC 7408 application circuit function IC 7408 7408 voltage regulator T310 kemet 7408 ic diagram IC 7408 and function IC 7408 AND
    Text: INTRODUCTION Timing functions until recently have been somewhat neglected by integrated circuit manufacturers The primary reason was the extremely wide range of input and output signals currently incorporated in discrete designs In addition power supply voltages varied over a ten to one range


    Original     		PDF LM122 IC AND GATE 7408 IC 7408 pin DIAGRAM OF IC 7408 IC 7408 application circuit function IC 7408 7408 voltage regulator T310 kemet 7408 ic diagram IC 7408 and function IC 7408 AND

    AN-97

    Abstract: T310 kemet LM222 "Optical Coupler" KEMET T310 T310 tantalum AN007408 scr firing circuit ac regulator LP9A1A data sheet of lm3905
    Text: National Semiconductor Application Note 97 December 1973 INTRODUCTION Timing functions, until recently, have been somewhat neglected by integrated circuit manufacturers. The primary reason was the extremely wide range of input and output signals currently incorporated in discrete designs. In addition,


    Original     		PDF LM122 Firs959 AN-97 T310 kemet LM222 "Optical Coupler" KEMET T310 T310 tantalum AN007408 scr firing circuit ac regulator LP9A1A data sheet of lm3905

    33T4

    Abstract: CSB834 CSD880
    Text: CSD880 CSD880 NPN PLASTIC POWER TRANSISTOR Audio frequency Power Amplifier Applications Complementary CSB834 j|f j ! ! I J * DIM MIN MAX A 14.42 16.51 B 9,63 10.67 C 3,56 4.83 0.90 E 1,15 1.40 F 3.75 3,66 G 2.29 2.79 H 2.54 3.43 J 0,56 K 12.70 14.73 L 6.35


    OCR Scan     		PDF CSD880 CSD880 CSB834 000115b 33T4 CSB834

    transistor schottky model spice

    Abstract: No abstract text available
    Text: V T C INC IDE D l^ a a ^ S T O VJ800 “ 0001Ö0S 0 T-H2-21 ANALOG MASTER CHIP FAMILY USER S G U ID E Release 2.2 CONTENTS 1. INTRODUCTION 1.1 Preface. 2-5 1.2 Bipolar-CMOS Comparison. 2-5


    OCR Scan     		PDF VJ800 T-H2-21 transistor schottky model spice