Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR QP Search Results

    TRANSISTOR QP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR QP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 7qqigii3 0005171 qpq TRANSISTOR MODULE QCA50B/QCB50A40/60 UL;E76102 M QCA50B and QCB50A are dual Darlin­ gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.


    OCR Scan     		QCA50B/QCB50A40/60 E76102 QCA50B QCB50A 400/600V QCA50B/QCB50A PDF

    2n4261

    Abstract: 2N426 M1515
    Text: 2N 4261 Transistor by SEMICOA Semiconductors http://semicoa.com/transist/2n426 i .htm a semicoR SEMICONDUCTORS 2N4261 Transistor Case: TO-72 Qual Level: JAN - JANS Chip Geometry: 0014 Polarity: PNP The 2N4261 is a fast-switching, small signal silicon transistor.


    OCR Scan     		com/transist/2n426 2N4261 MIL-PRF-19500/51 com/transist/2n4261 2N426 M1515 PDF

    Untitled

    Abstract: No abstract text available
    Text: MSR2N2222AUA Screened Levels: MSR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2222AUA 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MSR2N2222AUA device in a UA package, is ideal to


    Original     		MSR2N2222AUA MIL-PRF-19500 MSR2N2222AUA EEE-INST-002 T4-LDS-0337-1, PDF

    Untitled

    Abstract: No abstract text available
    Text: MVR2N2222AUA Screened Levels: MVR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MVR2N2222AUA 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MVR2N2222AUA device in a UA package, is ideal to


    Original     		MVR2N2222AUA MIL-PRF-19500 MVR2N2222AUA EEE-INST-002 T4-LDS-0331-1, PDF

    Untitled

    Abstract: No abstract text available
    Text: MSR2N2222AUB / UBC Screened Levels: MSR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2222AUB 100 Krad 100 Krad DESCRIPTION This RHA level high speed switching NPN transistor, 2N2222A in a UB or UBC ceramic


    Original     		MSR2N2222AUB MIL-PRF-19500 MSR2N2222AUB 2N2222A EEE-INST-002 T4-LDS-0337-2, PDF

    Untitled

    Abstract: No abstract text available
    Text: MVR2N2222AUB / UBC Screened Levels: MVR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MVR2N2222AUB 100 Krad 100 Krad DESCRIPTION This RHA level high speed switching NPN transistor, 2N2222A in a UB or UBC ceramic


    Original     		MVR2N2222AUB MIL-PRF-19500 MVR2N2222AUB 2N2222A EEE-INST-002 T4-LDS-0331-2, PDF

    Untitled

    Abstract: No abstract text available
    Text: MSR2N3700 Qualified Levels: MSR Rad Hard Low Power NPN Silicon Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N3700 100 Krad 100 Krad DESCRIPTION This RHA level low power NPN switching transistor, 2N3700 device in a TO-206AA package,


    Original     		MSR2N3700 MIL-PRF-19500 2N3700 O-206AA EEE-INST-002 T4-LDS-0340, PDF

    Untitled

    Abstract: No abstract text available
    Text: MSR2N3700UB Screened Levels: MSR Rad Hard Low Power NPN Silicon Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N3700UB 100 Krad 100 Krad DESCRIPTION This RHA level low power NPN switching transistor, 2N3700 device in a UB and UBC package,


    Original     		MSR2N3700UB MIL-PRF-19500 2N3700 EEE-INST-002 com28 T4-LDS-0340-1, PDF

    MSR2N2907A

    Abstract: No abstract text available
    Text: MSR2N2907A L Screened Levels: MSR Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2907A(L) 100 Krad 100 Krad DESCRIPTION This RHA level PNP switching transistor, 2N2907A device in a TO-206AA package, is ideal to


    Original     		MSR2N2907A MIL-PRF-19500 ESCC22900 2N2907A O-206AA EEE-INST-002 FEAT00 T4-LDS-0339, PDF

    Untitled

    Abstract: No abstract text available
    Text: MSR2N2907AUA Screened Levels: MSR Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2907AUA 100 Krad 100 Krad DESCRIPTION This RHA level PNP switching transistor, 2N2907A device in a UA package, is ideal to drive


    Original     		MSR2N2907AUA MIL-PRF-19500 2N2907A EEE-INST-002 T4-LDS-0339-1, PDF

    Untitled

    Abstract: No abstract text available
    Text: MVR2N2222A L Qualified Levels: MVR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MVR2N2222A(L) 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MVR2N2222A device in a TO-206AA package, is


    Original     		MVR2N2222A MIL-PRF-19500 O-206AA EEE-INST-002 T4-LDS-0331, PDF

    2N2907AUB

    Abstract: No abstract text available
    Text: MSR2N2907AUB / UBC Screened Levels: MSR Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2907AUB 100 Krad 100 Krad DESCRIPTION This RHA level PNP switching transistor, 2N2907A device in a UB package, is ideal to drive


    Original     		MSR2N2907AUB MIL-PRF-19500 MSR2N2907AUB 2N2907A EEE-INST-002 T4-LDS-0339-2, 2N2907AUB PDF

    Untitled

    Abstract: No abstract text available
    Text: MSR2N2222A L Qualified Levels: MSR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2222A(L) 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MSR2N2222A in a TO-206AA package, is ideal to


    Original     		MSR2N2222A MIL-PRF-19500 O-206AA EEE-INST-002 microsemi00 T4-LDS-0337, PDF

    2N2369AU

    Abstract: No abstract text available
    Text: MSR2N2369AUA Screened Levels: MSR Rad Hard NPN Silicon High Speed Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2369AUA 100 Krad 100 Krad DESCRIPTION This RHA level high speed NPN switching transistor, 2N2369A in a UA package, is ideal to


    Original     		MSR2N2369AUA MIL-PRF-19500 2N2369A EEE-INST-002 T4-LDS-0338-2, 2N2369AU PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 PDF

    BLW 82

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE » bb53T31 QQ2T4MT 374 J APX DLVVO O V H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and


    OCR Scan     		bb53T31 BLW 82 PDF

    Untitled

    Abstract: No abstract text available
    Text: MSR2N2369AUB / UBC Screened Levels: MSR Rad Hard NPN Silicon High Speed Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2369AUB 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to


    Original     		MSR2N2369AUB MIL-PRF-19500 MSR2N2369AUB 2N2369A EEE-INST-002 T4-LDS-0338-3, PDF

    TRANSISTOR G13

    Abstract: c 939 transistor bf 4556 d BF939
    Text: 2SC D • a23SbOS OQOMSSb 4 W Ê S I Z 6 . PNP Silicon Planar Transistor SIEMENS AK TI EN GES EL LSC HAF BF 939 45 56 D - BF 9 3 9 is a PNP silicon RF pianar transistor in TO 92 plastic package DIN 41868 . The transistor is particularly suitable for controllable VHF input stages in TV tuners.


    OCR Scan     		Q62702-F fl235b05 0Q04557 TRANSISTOR G13 c 939 transistor bf 4556 d BF939 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMOS transistor isolated version of PHP3N50E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable


    OCR Scan     		PHP3N50E PHX2N50E OT186A PDF

    NES6294Z

    Abstract: No abstract text available
    Text: NES6294Z 4 AMPERE NPN DARLINGTON POWER TRANSISTOR SILICON POWER DARLINGTON TRANSISTOR • • • • General Purpose Amplifier and Switching Application High Current Gain hFE = 3000 Typ @ 2A Monolithic Construction Built in Base Emitter Shunt Resistors


    OCR Scan     		NES6294Z NES6294Z PDF

    BF245 A spice

    Abstract: BF245 spice electronic power generator using transistor BF245A spice BF245 BF245 B spice BF245 TRANSISTOR transistor BF245 Fet BF245 BF245 spice model
    Text: Analog Electronics I Laboratory Exercise 2 FET Amplifier Aim of the exercise The aim of this laboratory exercise is to become familiar with operation of simple single FET transistor amplifier. Exercise illustrates transistor polarization, frequency characteristics and


    Original     		100kHz BF245 A spice BF245 spice electronic power generator using transistor BF245A spice BF245 BF245 B spice BF245 TRANSISTOR transistor BF245 Fet BF245 BF245 spice model PDF

    NSG2555

    Abstract: TRANSISTOR T4
    Text: NSG2555 4 AMPERE NPN DARLINGTON POWER TRANSISTOR SILICON POWER DARLINGTON TRANSISTOR • • • • General Purpose Amplifier and Switching Application High Current Gain hFE = 3000 Typ @ 2A M onolithic Construction Built in Base Emitter Shunt Resistors


    OCR Scan     		NSG2555 NSG2555 TRANSISTOR T4 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR540 The transistor is encapsulated in a plastic SOT23 envelope. • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability.


    OCR Scan     		BFR540 BFR540 PDF