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    TRANSISTOR R 2003 Search Results

    TRANSISTOR R 2003 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR R 2003 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G8051S

    Abstract: G8551S
    Text: ISSUED DATE :2003/11/11 REVISED DATE :2004/11/29B G8051S N P N E P I TA X I A L T R A N S I S T O R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR Description The G8051S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio


    Original     		PDF 2004/11/29B G8051S G8051S 700mA G8551S G8551S

    2SC640

    Abstract: transistor 2sc640 2sc640 transistor 2sc640 equivalent transistor 2sa733 TRANSISTOR R 2003 2SA733 2SA733 Y hFE is transistor
    Text: ST 2SC640 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended.


    Original     		PDF 2SC640 2SA733 100mA, 2SC640 transistor 2sc640 2sc640 transistor 2sc640 equivalent transistor 2sa733 TRANSISTOR R 2003 2SA733 2SA733 Y hFE is transistor

    2SC640

    Abstract: transistor 2sc640 2sc640 equivalent 2sc640 transistor 2SA733 2SA733 Y
    Text: ST 2SC640 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended.


    Original     		PDF 2SC640 2SA733 100mA, 2SC640 transistor 2sc640 2sc640 equivalent 2sc640 transistor 2SA733 2SA733 Y

    2SC640

    Abstract: transistor 2sc640 2sc640 transistor 2SA733 hFE is transistor
    Text: ST 2SC640 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended.


    Original     		PDF 2SC640 2SA733 100mA, 2SC640 transistor 2sc640 2sc640 transistor 2SA733 hFE is transistor

    2SC640

    Abstract: 2sc640 equivalent transistor 2sc640 transistor 2sa733 2SA733 hFE is transistor 2sc640 transistor
    Text: ST 2SC640 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended.


    Original     		PDF 2SC640 2SA733 100mA, 2SC640 2sc640 equivalent transistor 2sc640 transistor 2sa733 2SA733 hFE is transistor 2sc640 transistor

    G8051S

    Abstract: G8551 G8551S
    Text: ISSUED DATE :2003/11/11 REVISED DATE :2004/11/29B G8551S P N P E P I TA X I A L S I L I C O N T R A N S I S T O R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR Description The G8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio


    Original     		PDF 2004/11/29B G8551S G8551 700mA G8051S -20reserved. G8051S G8551S

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    2sa 940

    Abstract: 2SC2530 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu
    Text: FUJITSU MICROELECTRONICS m 3 7 4 ^ 5 0Dlb5Sb 2 BBFMI 31E D FUJITSU January 1990 Edition 1.1 PRODUCT P R O FILE' 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with Fujttus's unique Ring Em itter Transistor R E T technology. R ET devices are


    OCR Scan     		PDF 2SC2530 35MHz 2sa 940 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu

    FF50R12KF2

    Abstract: FF50R12
    Text: FF 50 R 12 KF 2 Transistor Transistor Thermische Eigenschaften R th J C Elektrische Eigenschaften Electrical properties Hochstzulässige W erte V ces Maximum rated values R th C K Thermal properties pro Baustein /p e r module D C , pro Zweig / per arm pro Baustein / per module


    OCR Scan     		PDF FFSOR12COKF3 FF50R12 50R10KF2/B 34032T7 FF50R12KF2

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    FF 25 R 1200 kf

    Abstract: No abstract text available
    Text: FF 150 R 12 KF Therm ische Eigenschaften Therm al properties Ftthjc DC, pro B austein/p e r module 0,055 5C/W C/W DC, pro Zweig / per arm 0,11 C/W RthCK pro B au stein/p e r m odule 0,03 cm pro Zweig /p e r arm 0,06 Transistor Transistor Elektrische Eigenschaften


    OCR Scan     		PDF R12Q0KF< FF 25 R 1200 kf

    16 pin diagram of uln 2003

    Abstract: ULM2002 pin diagram of UlN2004 ic. uln 2003 uln 2003 pin diagram uln series 14 PIN IC ULN 2003 pin of ULN 2003 ULN2003 features ULN2001
    Text: S ig rietics Interface - Transistor Arrays ULN 2001/2/3/4 High Voltage/ Current Darlington Transistor Arrays C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N These high-voltage, high-current D a rlirg to n transistor arrays are com prised o f seven silicon NPN D a rlington


    OCR Scan     		PDF 600mA ULN-2001 16 pin diagram of uln 2003 ULM2002 pin diagram of UlN2004 ic. uln 2003 uln 2003 pin diagram uln series 14 PIN IC ULN 2003 pin of ULN 2003 ULN2003 features ULN2001

    Untitled

    Abstract: No abstract text available
    Text: FF 100 R 06 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values Ic Therm ische Eigenschaften DC, pro Baustein / R th J C R th C K 600 V 100 A Thermal properties 0 ,1 5 5 0 ,3 1 0 ,0 6


    OCR Scan     		PDF 34G32C17

    Untitled

    Abstract: No abstract text available
    Text: FZ 400 R 12 KF Therm ische Eigenschaften Therm al properties 0,052 °C/W RthJC DC, pro B a u ste in /p e r module Transistor Transistor Elektrische Eigenschaften Electrical properties RthCK 0,03 pro B a u s te in /p e r module °C/W Maximum rated values 1200


    OCR Scan     		PDF 34032T7 0G02G11

    7SR10

    Abstract: No abstract text available
    Text: FF 75 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte VcES Maximum rated values 1200 Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,11 DC, pro Z w e ig /p e r arm


    OCR Scan     		PDF FFT5B12KF2 34035T7 7SR10

    2N5179

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e RF Line 4.5 dB @ 200 MHz HIGH FREQUENCY TRANSISTOR NPN SILICO N NPN SILICO N RF HIGH FREQ UENCY TRANSISTOR . . . designed p r im a r ily fo r use in high -g a in , lo w -n o is e a m p lifie r , o s c il­ la to r, and m ix e r a p p lic a tio n s .


    OCR Scan     		PDF 2N5179 35flo 2N5179

    I1130

    Abstract: No abstract text available
    Text: FZ 300 R 12 KF 2 Therm ische Eigenschaften Therm al properties Rthjc DC, pro Baustein /p e r module 0,063 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcES lc 1200 V 300


    OCR Scan     		PDF I11300 I1130

    A7800

    Abstract: a 7800
    Text: FZ 1200 R 16 KF 1 Transistor Transistor Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,016 °C/W Elektrische Eigenschaften Electrical properties H öchstzulässige W erte V ces Maximum rated values RthCK pro B a u ste in /p e r module


    OCR Scan     		PDF 34032T7 00Q2D25 A7800 a 7800

    Untitled

    Abstract: No abstract text available
    Text: FZ 400 R 12 KF 2 Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein /p e r module 0,052 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 400 A pro Baustein / per module Ic 0,03 °C/W


    OCR Scan     		PDF 34032T7 0002G13

    L81A

    Abstract: 2SC2428
    Text: FUJI TS U M I C R O E L E C T R O N I C S 31E D S 374*17« 001b51b T HFfll r-33'13 FUJITSU - January 1990 Edition 1.1 P R O D U C T PR O FILEZ 2SC2428 Silicon High Speed Power Transistor DESCRIPTION The 2SC 242 8 is a silicon NPN general purpose, high power switching transistor


    OCR Scan     		PDF lb51b r-33-13 2SC2428 30Cjis T-33-13 L81A

    Untitled

    Abstract: No abstract text available
    Text: FF 200 R 12 K L Transistor Transistor Therm ische Eigenschaften R thjc Elektrische Eigenschaften Electrical properties V CES M a xim u m rated va lu e s 1200 V 20 0 A RthCK lc Thermal properties DC, pro B a u s te in / p e r m od u le D C, pro B au ste in / p e r m od u le


    OCR Scan     		PDF

    10J24

    Abstract: No abstract text available
    Text: FZ 200 R 12 KF 2 Transistor Transistor Therm ische Eigenschaften Thermal properties Rthjc DC, pro B a u ste in /p e r module 0,089 °CAN Elektrische Eigenschaften Electrical properties H öchstzulässige W erte Maximum rated values RthCK V CES lc 1200 V 200


    OCR Scan     		PDF FF20QR12KF2 F300R1300 10J24

    Untitled

    Abstract: No abstract text available
    Text: FF 150 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values V ces Ic Therm ische Eigenschaften Thermal properties DC, pro B austein/ per module 0 ,0 9 R th J C DC, pro Zweig / per arm


    OCR Scan     		PDF 34032t17

    Untitled

    Abstract: No abstract text available
    Text: FF 50 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 50 A Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro B austein/p e r module 0,155 C/W ’C/W DC, pro Zweig / per arm 0,31 C/W


    OCR Scan     		PDF 3403ES7