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    TRANSISTOR R24 Search Results

    TRANSISTOR R24 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR R24 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC4226

    Abstract: 2SC4226 APPLICATION NOTES PU10450EJ01V0DS R25 marking 2SC4226 datasheet marking r25 NPN 2SC4226-T1 transistor s2p
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4226 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold


    Original     		PDF 2SC4226 2SC4226 S21e2 2SC4226-T1 2SC4226 APPLICATION NOTES PU10450EJ01V0DS R25 marking 2SC4226 datasheet marking r25 NPN 2SC4226-T1 transistor s2p

    nec 2741

    Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.


    Original     		PDF 2SC4226 2SC4226 SC-70 2SC4226-T1 nec 2741 2SC4226 datasheet 2SC4226-T1 2SC4226-T2

    2SC3356

    Abstract: IC nec 555 transistor 1431 T marking 544 low noise amplifier
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.


    Original     		PDF 2SC3356 2SC3356 IC nec 555 transistor 1431 T marking 544 low noise amplifier

    JLN 2003

    Abstract: 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR
    Text: PreliminaryData Sheet 2SC4226 R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.


    Original     		PDF 2SC4226 R09DS0022EJ0200 2SC4226 S21e2 2SC4226-A 2SC4226-T1 JLN 2003 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR

    2SC3356 s2p

    Abstract: 2SC3356 2SC3356-A NE85633-T1B-A 2SC3356-T1B-A
    Text: A Business Partner of Renesas Electronics Corporation. Preliminary NE85633 / 2SC3356 Data Sheet R09DS0021EJ0300 Rev.3.00 NPN Silicon RF Transistor Jun 28, 2011 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES


    Original     		PDF NE85633 2SC3356 R09DS0021EJ0300 2SC3356 NE85633-T1B 2SC3356-T1B NE85633-A 2SC3356-A NE85633-T1B-A 2SC3356 s2p 2SC3356-T1B-A

    2SC4226-T1

    Abstract: 2SC4226-T1-A ne85630 NE85630-A 2SC4226T1a transistor s2p Transistor R25 NE85630A 2SC4226-A r23 transistor
    Text: A Business Partner of Renesas Electronics Corporation. Preliminary NE85630 / 2SC4226 Data Sheet R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor


    Original     		PDF NE85630 2SC4226 R09DS0022EJ0200 2SC4226 S21e2 SC-70) 2SC4226-T1 2SC4226-T1-A NE85630-A 2SC4226T1a transistor s2p Transistor R25 NE85630A 2SC4226-A r23 transistor

    transistor code R24

    Abstract: R24 marking code transistor Transistor R25 marking r25 NPN r25 transistor SOT R23 SOT R25 marking r25 NPN R25 R24 marking DATASHEET
    Text: 2SC4226 NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE SOT-323 The 2SC4226 is a Low supply voltage transistor designed for VHF, UHF low noise amplifier


    Original     		PDF 2SC4226 OT-323 2SC4226 01-June-2002 transistor code R24 R24 marking code transistor Transistor R25 marking r25 NPN r25 transistor SOT R23 SOT R25 marking r25 NPN R25 R24 marking DATASHEET

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA801T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 ELEMENTS MINI MOLD The µPA801T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS (Unit: mm)


    Original     		PDF PA801T PA801T

    marking R24

    Abstract: 2sc4226 nec 2741 MARKING 702 6pin ic
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA801T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 ELEMENTS MINI MOLD The µPA801T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS (Unit: mm)


    Original     		PDF PA801T PA801T marking R24 2sc4226 nec 2741 MARKING 702 6pin ic

    2SC3356-T1B-A

    Abstract: 2SC3356 2SC3356 s2p 2SC3356-T1B
    Text: PreliminaryData Sheet 2SC3356 R09DS0021EJ0300 Rev.3.00 NPN Silicon RF Transistor Jun 28, 2011 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz


    Original     		PDF 2SC3356 R09DS0021EJ0300 2SC3356 2SC3356-T1B 2SC3356-A 2SC3356-T1B-A 2SC3356 s2p

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: R24 marking code transistor transistor code R24 R24 marking DATASHEET R24 marking code sot23 MMBTSC4226 marking r25 marking r25 NPN NPN R25 transistor amplifier VHF/UHF
    Text: MMBTSC4226 NPN Silicon Epitaxial Planar Transistor High Frequency Low Noise Amplifier. The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. Features: Low Noise NF=1.2dB TYP. @ f=1GHz, VCE=3V, IC=7mA High Gain S21e 2 =9.0dB TYP. @ f=1GHz, VCE=3V, IC=7mA


    Original     		PDF MMBTSC4226 OT-23 MMBTSC4226 Transistor hFE CLASSIFICATION Marking CE R24 marking code transistor transistor code R24 R24 marking DATASHEET R24 marking code sot23 marking r25 marking r25 NPN NPN R25 transistor amplifier VHF/UHF

    transistor code R24

    Abstract: R24 marking code transistor R24 marking code sot23 marking r25 NPN NPN R25 R24 marking DATASHEET Transistor hFE CLASSIFICATION Marking CE transistor R24 MMBTSC4226
    Text: MMBTSC4226 NPN Silicon Epitaxial Planar Transistor High Frequency Low Noise Amplifier. The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. Features: z Low Noise NF=1.2dB TYP. @ f=1GHz, VCE=3V, IC=7mA z High Gain S21e 2 =9.0dB TYP. @ f=1GHz, VCE=3V, IC=7mA


    Original     		PDF MMBTSC4226 OT-23 MMBTSC4226 transistor code R24 R24 marking code transistor R24 marking code sot23 marking r25 NPN NPN R25 R24 marking DATASHEET Transistor hFE CLASSIFICATION Marking CE transistor R24

    2SC3356 s2p

    Abstract: 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz


    Original     		PDF 2SC3356 2SC3356-T1B 2SC3356 s2p 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356

    2SC3356

    Abstract: R25 2sc3356 marking r25 NPN 2SC3356-T1B NE85633 PU10209EJ02V0DS
    Text: NPN SILICON RF TRANSISTOR NE85633 / 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz


    Original     		PDF NE85633 2SC3356 NE85633-A 2SC3356 NE85633-T1B-A 2SC3356-T1B R23/Q R24/R R25/S PU10209EJ02V0DS R25 2sc3356 marking r25 NPN PU10209EJ02V0DS

    LT1185

    Abstract: transistor BD 424 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK diode 1334 106 6K tantalum capacitors
    Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Standard 5-Lead Packages Full Remote Sense


    Original     		PDF LT1185 LT1185 transistor BD 424 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK diode 1334 106 6K tantalum capacitors

    Untitled

    Abstract: No abstract text available
    Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Full Remote Sense Low Quiescent Current: 2.5mA


    Original     		PDF LT1185 O-220 LT1185 LT1129 200mA 400mV LT1175 500mA LT1585 LT1964

    LT1185CT

    Abstract: LT1185 LT1185C LT1185CQ LT1185I LT1185IQ LT1185M LT1185MK
    Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Full Remote Sense Low Quiescent Current: 2.5mA


    Original     		PDF LT1185 O-220 LT1185 LT1129 200mA 400mV LT1175 500mA LT1585 LT1964 LT1185CT LT1185C LT1185CQ LT1185I LT1185IQ LT1185M LT1185MK

    B81121 X2 mkt

    Abstract: B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2
    Text: Version 1.1 , March 2001 Application Note AN-TDA16888-0-010323 TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz Author: Michael Herfurth Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply N e v e r


    Original     		PDF AN-TDA16888-0-010323 100kHz V/18A; -12V/1A; V/100mA Room14J1 Room1101 B81121 X2 mkt B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2

    NEC IC D 553 C

    Abstract: nec 2741 702 mini transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.


    OCR Scan     		PDF 2SC4226 2SC4226 SC-70 2SG4226-T1 NEC IC D 553 C nec 2741 702 mini transistor

    transistor NEC D 588

    Abstract: IC nec 555 nec d 588 marking 544 low noise amplifier ZS12 nec 501 t nec marking 2sc3356 R25 2sc3356
    Text: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.


    OCR Scan     		PDF 2SC3356 2SC3356 transistor NEC D 588 IC nec 555 nec d 588 marking 544 low noise amplifier ZS12 nec 501 t nec marking 2sc3356 R25 2sc3356

    transistor NEC D 822 P

    Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters


    OCR Scan     		PDF 2SC4226 2SC4226 SC-70 2SC4226-T1 2SC4226-T2 transistor NEC D 822 P transistor number D 2498 702 mini transistor NEC D 822 P

    ir2427 driver

    Abstract: No abstract text available
    Text: 15E o | a iaa?ciâ GaGima SHARP E L E K / MELEC D IV 1 IR2427 6-Unit 150mA Transistor Array T-52-13-45 IR2427 • Description ■ Features 6-Unit 150mA Transistor Array The IR2427 is a 6-circuit driver. The internal clamping diodes enable the IC to drive the inductive


    OCR Scan     		PDF 150mA T-52-13-45 IR2427 IR2427 14-pin 130mA ir2427 driver

    GE 2646

    Abstract: 2SC3356 r25 CD/GE S 2646
    Text: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS T he 2 S C 3 3 5 6 is an NPN silico n ep ita xia l tra n sisto r d e sig n e d for low Units: mm noise a m p lifie r at VH F, U H F and C A T V band.


    OCR Scan     		PDF 2SC3356 2SC3356 S22e-FREQUENCY GE 2646 2SC3356 r25 CD/GE S 2646

    TTL integrated circuit Dual J-K Master Slave Flip flop

    Abstract: Fairchild 9002 DTL Fairchild 930 JK flipflop 9001 micrologic* master slave ami 9002 ttul Logic 9001 fairchild micrologic dtl rs flip flop ScansUX979
    Text: MARCH 1967 • FAIRCHILD TR A N SIST O R -T R A N SIST O R G E N E R A L D E S C R IP T IO N MICROLOGIC The Fairchild Transistor-Transistor M icrologic* Integrated Circuit fam ily TT/iL com b ines a high fanout, high noise immunity, low power dissipation and good capacitive load driving


    OCR Scan     		PDF