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    TRANSISTOR R44 Search Results

    TRANSISTOR R44 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR R44 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NEC 2905

    Abstract: NEC 1357 2SC4228 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC
    Text: DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.


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    2SC4228 2SC4228 NEC 2905 NEC 1357 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC PDF

    2SC4228

    Abstract: 2SC4228-T1 TRANSISTOR R44
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4228 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold


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    2SC4228 2SC4228 S21e2 2SC4228-T1 2SC4228-T1 TRANSISTOR R44 PDF

    transistor NEC D 822 P

    Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.


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    2SC4228 2SC4228 transistor NEC D 822 P NEC D 986 transistor NEC B 617 transistor NEC D 587 r44 marking transistor D 2624 PDF

    transistor NEC D 822 P

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.


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    2SC4228 2SC4228 transistor NEC D 822 P PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC3585 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.


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    2SC3585 2SC3585 S22e-FREQUENCY PDF

    2SC3585

    Abstract: No abstract text available
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3585 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. The


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    2SC3585 2SC3585 PDF

    transistor NEC D 587

    Abstract: NEC D 587 TRANSISTOR R44 z 607 ma 2SC3585 transistor 5951 nec 1041
    Text: DATA SHEET SILICON TRANSISTOR 2SC3585 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR DESCRIPTION P A C K A G E DIM ENSIO NS Units: mm The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.


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    2SC3585 2SC3585 transistor NEC D 587 NEC D 587 TRANSISTOR R44 z 607 ma transistor 5951 nec 1041 PDF

    LT1185

    Abstract: transistor BD 424 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK diode 1334 106 6K tantalum capacitors
    Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Standard 5-Lead Packages Full Remote Sense


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    LT1185 LT1185 transistor BD 424 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK diode 1334 106 6K tantalum capacitors PDF

    Untitled

    Abstract: No abstract text available
    Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Full Remote Sense Low Quiescent Current: 2.5mA


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    LT1185 O-220 LT1185 LT1129 200mA 400mV LT1175 500mA LT1585 LT1964 PDF

    LT1185CT

    Abstract: LT1185 LT1185C LT1185CQ LT1185I LT1185IQ LT1185M LT1185MK
    Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Full Remote Sense Low Quiescent Current: 2.5mA


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    LT1185 O-220 LT1185 LT1129 200mA 400mV LT1175 500mA LT1585 LT1964 LT1185CT LT1185C LT1185CQ LT1185I LT1185IQ LT1185M LT1185MK PDF

    B81121 X2 mkt

    Abstract: B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2
    Text: Version 1.1 , March 2001 Application Note AN-TDA16888-0-010323 TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz Author: Michael Herfurth Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply N e v e r


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    AN-TDA16888-0-010323 100kHz V/18A; -12V/1A; V/100mA Room14J1 Room1101 B81121 X2 mkt B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2 PDF

    LT1185

    Abstract: LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK
    Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of an FET pass element with significantly less die area. High efficiency is maintained by using special


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    LT1185 LT1185 118500mA LT1120A LT1129 200mA 400mV LT1175 500mA LT1585 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK PDF

    Untitled

    Abstract: No abstract text available
    Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of an FET pass element with significantly less die area. High efficiency is maintained by using special


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    LT1185 LT1185 LT1120A LT1129 200mA 400mV LT1175 500mA LT1585 1185fd PDF

    LT1120A

    Abstract: lt1185ct 2A 12v Low Dropout Regulator 5-Lead Plastic DD Pak ltc Q input 220 ac output 30v dc 0.5a LT1185 LT1185C LT1185CQ LT1185I LT1185IT
    Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of a FET pass element with significantly less die area. High efficiency is maintained by using special


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    LT1185 LT1185 O-220 LT1120A LT1129 200mA 400mV LT1175 500mA LT1585 LT1120A lt1185ct 2A 12v Low Dropout Regulator 5-Lead Plastic DD Pak ltc Q input 220 ac output 30v dc 0.5a LT1185C LT1185CQ LT1185I LT1185IT PDF

    uPC2581

    Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
    Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8


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    PD7500 X10679EJAV0SG00 MF-1134) 1995P uPC2581 uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157 PDF

    NE35

    Abstract: CS224
    Text: 6 Pin Transistor Output Hermetically Sealed Ceramic Optocoupler Isocom Ltd supplies high reliability devices for applications requiring an operating tempera­ ture range of - 5 5 ° C to + 1 2 5 °C e.g. military applications . BS9000, together with CECC, is a preferred


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    BS9000, BS9000 5750/IS 09000/E NE35 CS224 PDF

    MAX17119EVKIT

    Abstract: max17119E Q1/C84-8
    Text: 19-5078; Rev 1; 4/10 MAX17119 Evaluation Kit The MAX17119 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that evaluates the MAX17119 (IC) 10-channel, high-voltage, level-shifting scan driver for active-matrix, thin-film transistor (TFT),


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    MAX17119 MAX17119 10-channel, MAX17119EVKIT max17119E Q1/C84-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-4354; Rev 0; 10/08 MAX17108 Evaluation Kit The MAX17108 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that evaluates the MAX17108 10-channel, high-voltage level-shifting scan driver for active-matrix, thin-film transistor (TFT) liquidcrystal display (LCD) applications.


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    MAX17108 10-channel, 200mA MAX17108 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM50TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM in in/I' J in V V D im ensions in mm Tab#110, t=0.5 r-44*-u-4fl-u-44*-i


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    QM50TF-HB -u4fl-u44 PDF

    MARKING SMD transistor R44

    Abstract: MARKING SMD npn TRANSISTOR R44 MARKING SMD npn TRANSISTOR R45 MARKING SMD transistor R43 TRANSISTOR R44 2SC3585 S R43 smd transistor marking GA MARKING SMD npn TRANSISTOR R43 marking R45
    Text: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC3585 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NF 1.8 dB TYP. @f = 2.0 GHz 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1


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    2SC3585 OT-23 R43/Q R44/R R45/S MARKING SMD transistor R44 MARKING SMD npn TRANSISTOR R44 MARKING SMD npn TRANSISTOR R45 MARKING SMD transistor R43 TRANSISTOR R44 2SC3585 S R43 smd transistor marking GA MARKING SMD npn TRANSISTOR R43 marking R45 PDF

    LD93

    Abstract: FDR4410 SOIC-16
    Text: A p ril 1 9 9 8 FAIRCHILD M IC Q N D U C T D R tm FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost alternative to the popular Si441 ODY. • 9.3 A, 30 V. R d : 0.013 Q. @ VG : 10 V


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    FDR4410 FDR4410 Si441 OT-23 OT-223 SOIC-16 FDR441 LD93 SOIC-16 PDF

    t430 transistor

    Abstract: 5252 F ic BT129 IC 2576 5.0v LT 5252 TI42 t514 TRANSISTOR transistor 2sb605 2SB605 016K
    Text: SEC j m*Ti\rx A S ilic o n T r a n s is to r _ 2SB605 P N P ik 7 + '> 7 ^ ' > >J □ > h =7 7 .9 PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o t — r" 'i 7 > ~7 ° ¥ f c o V KMffl/ PACKAGE DIMENSIONS * y 4 U n it : mm


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    2SB605 02SD5711 PWS10ms, t430 transistor 5252 F ic BT129 IC 2576 5.0v LT 5252 TI42 t514 TRANSISTOR transistor 2sb605 2SB605 016K PDF

    NCP03XH103p05RL

    Abstract: No abstract text available
    Text: R44E8.pdf 04.1.26 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF


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    R44E8 NCP03XH103p05RL NCP03WB473p05RL PDF

    NTC 100K 3950

    Abstract: ntc 100K ohm NCP15 ntc 33K B 4050
    Text: R44E8.pdf 04.1.26 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF


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    R44E8 NTC 100K 3950 ntc 100K ohm NCP15 ntc 33K B 4050 PDF