NEC 2905
Abstract: NEC 1357 2SC4228 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC
Text: DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4228
2SC4228
NEC 2905
NEC 1357
2SC4228-T1
2SC4228-T2
transistor 936
sc 789 transistor
1357 transistor NEC
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2SC4228
Abstract: 2SC4228-T1 TRANSISTOR R44
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4228 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
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2SC4228
2SC4228
S21e2
2SC4228-T1
2SC4228-T1
TRANSISTOR R44
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transistor NEC D 822 P
Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4228
2SC4228
transistor NEC D 822 P
NEC D 986
transistor NEC B 617
transistor NEC D 587
r44 marking
transistor D 2624
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transistor NEC D 822 P
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4228
2SC4228
transistor NEC D 822 P
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC3585 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.
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2SC3585
2SC3585
S22e-FREQUENCY
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2SC3585
Abstract: No abstract text available
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3585 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. The
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2SC3585
2SC3585
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transistor NEC D 587
Abstract: NEC D 587 TRANSISTOR R44 z 607 ma 2SC3585 transistor 5951 nec 1041
Text: DATA SHEET SILICON TRANSISTOR 2SC3585 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR DESCRIPTION P A C K A G E DIM ENSIO NS Units: mm The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.
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2SC3585
2SC3585
transistor NEC D 587
NEC D 587
TRANSISTOR R44
z 607 ma
transistor 5951
nec 1041
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LT1185
Abstract: transistor BD 424 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK diode 1334 106 6K tantalum capacitors
Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Standard 5-Lead Packages Full Remote Sense
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LT1185
LT1185
transistor BD 424
LT1185C
LT1185CT
LT1185I
LT1185IT
LT1185M
LT1185MK
diode 1334
106 6K tantalum capacitors
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Untitled
Abstract: No abstract text available
Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Full Remote Sense Low Quiescent Current: 2.5mA
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LT1185
O-220
LT1185
LT1129
200mA
400mV
LT1175
500mA
LT1585
LT1964
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LT1185CT
Abstract: LT1185 LT1185C LT1185CQ LT1185I LT1185IQ LT1185M LT1185MK
Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Full Remote Sense Low Quiescent Current: 2.5mA
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LT1185
O-220
LT1185
LT1129
200mA
400mV
LT1175
500mA
LT1585
LT1964
LT1185CT
LT1185C
LT1185CQ
LT1185I
LT1185IQ
LT1185M
LT1185MK
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B81121 X2 mkt
Abstract: B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2
Text: Version 1.1 , March 2001 Application Note AN-TDA16888-0-010323 TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz Author: Michael Herfurth Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply N e v e r
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AN-TDA16888-0-010323
100kHz
V/18A;
-12V/1A;
V/100mA
Room14J1
Room1101
B81121 X2 mkt
B81121 X2 mkp
AN-TDA16888-0-010323
ELKO capacitors
MKT .22K 250V X2
EPCOS 230 00 O
ELKO CAPACITOR 63v 2,2
elko capacitor
TDA 16888
B81121 X2
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LT1185
Abstract: LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK
Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of an FET pass element with significantly less die area. High efficiency is maintained by using special
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LT1185
LT1185
118500mA
LT1120A
LT1129
200mA
400mV
LT1175
500mA
LT1585
LT1185C
LT1185CT
LT1185I
LT1185IT
LT1185M
LT1185MK
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Untitled
Abstract: No abstract text available
Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of an FET pass element with significantly less die area. High efficiency is maintained by using special
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LT1185
LT1185
LT1120A
LT1129
200mA
400mV
LT1175
500mA
LT1585
1185fd
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LT1120A
Abstract: lt1185ct 2A 12v Low Dropout Regulator 5-Lead Plastic DD Pak ltc Q input 220 ac output 30v dc 0.5a LT1185 LT1185C LT1185CQ LT1185I LT1185IT
Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of a FET pass element with significantly less die area. High efficiency is maintained by using special
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LT1185
LT1185
O-220
LT1120A
LT1129
200mA
400mV
LT1175
500mA
LT1585
LT1120A
lt1185ct
2A 12v Low Dropout Regulator
5-Lead Plastic DD Pak ltc Q
input 220 ac output 30v dc 0.5a
LT1185C
LT1185CQ
LT1185I
LT1185IT
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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PD7500
X10679EJAV0SG00
MF-1134)
1995P
uPC2581
uPC2002
2sd1557
uPA67C
uPB582
upc1237
uPC317
2P4M PIN DIAGRAM
2SC4328
uPC157
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NE35
Abstract: CS224
Text: 6 Pin Transistor Output Hermetically Sealed Ceramic Optocoupler Isocom Ltd supplies high reliability devices for applications requiring an operating tempera ture range of - 5 5 ° C to + 1 2 5 °C e.g. military applications . BS9000, together with CECC, is a preferred
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BS9000,
BS9000
5750/IS
09000/E
NE35
CS224
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MAX17119EVKIT
Abstract: max17119E Q1/C84-8
Text: 19-5078; Rev 1; 4/10 MAX17119 Evaluation Kit The MAX17119 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that evaluates the MAX17119 (IC) 10-channel, high-voltage, level-shifting scan driver for active-matrix, thin-film transistor (TFT),
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MAX17119
MAX17119
10-channel,
MAX17119EVKIT
max17119E
Q1/C84-8
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Untitled
Abstract: No abstract text available
Text: 19-4354; Rev 0; 10/08 MAX17108 Evaluation Kit The MAX17108 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that evaluates the MAX17108 10-channel, high-voltage level-shifting scan driver for active-matrix, thin-film transistor (TFT) liquidcrystal display (LCD) applications.
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MAX17108
10-channel,
200mA
MAX17108
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM50TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM in in/I' J in V V D im ensions in mm Tab#110, t=0.5 r-44*-u-4fl-u-44*-i
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QM50TF-HB
-u4fl-u44
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MARKING SMD transistor R44
Abstract: MARKING SMD npn TRANSISTOR R44 MARKING SMD npn TRANSISTOR R45 MARKING SMD transistor R43 TRANSISTOR R44 2SC3585 S R43 smd transistor marking GA MARKING SMD npn TRANSISTOR R43 marking R45
Text: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC3585 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NF 1.8 dB TYP. @f = 2.0 GHz 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1
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2SC3585
OT-23
R43/Q
R44/R
R45/S
MARKING SMD transistor R44
MARKING SMD npn TRANSISTOR R44
MARKING SMD npn TRANSISTOR R45
MARKING SMD transistor R43
TRANSISTOR R44
2SC3585
S R43
smd transistor marking GA
MARKING SMD npn TRANSISTOR R43
marking R45
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LD93
Abstract: FDR4410 SOIC-16
Text: A p ril 1 9 9 8 FAIRCHILD M IC Q N D U C T D R tm FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost alternative to the popular Si441 ODY. • 9.3 A, 30 V. R d : 0.013 Q. @ VG : 10 V
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FDR4410
FDR4410
Si441
OT-23
OT-223
SOIC-16
FDR441
LD93
SOIC-16
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t430 transistor
Abstract: 5252 F ic BT129 IC 2576 5.0v LT 5252 TI42 t514 TRANSISTOR transistor 2sb605 2SB605 016K
Text: SEC j m*Ti\rx A S ilic o n T r a n s is to r _ 2SB605 P N P ik 7 + '> 7 ^ ' > >J □ > h =7 7 .9 PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o t — r" 'i 7 > ~7 ° ¥ f c o V KMffl/ PACKAGE DIMENSIONS * y 4 U n it : mm
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2SB605
02SD5711
PWS10ms,
t430 transistor
5252 F ic
BT129
IC 2576 5.0v
LT 5252
TI42
t514 TRANSISTOR
transistor 2sb605
2SB605
016K
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NCP03XH103p05RL
Abstract: No abstract text available
Text: R44E8.pdf 04.1.26 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF
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R44E8
NCP03XH103p05RL
NCP03WB473p05RL
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NTC 100K 3950
Abstract: ntc 100K ohm NCP15 ntc 33K B 4050
Text: R44E8.pdf 04.1.26 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF
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R44E8
NTC 100K 3950
ntc 100K ohm
NCP15
ntc 33K B 4050
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