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    TRANSISTOR RF A 5.8 GHZ A 30 WATTS Search Results

    TRANSISTOR RF A 5.8 GHZ A 30 WATTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR RF A 5.8 GHZ A 30 WATTS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Johanson Piston Trimmer

    Abstract: G200 RF TRANSISTOR 2GHZ
    Text: e PTB 20125 100 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20125 is an NPN, push-pull RF power transistor intended for 26 Vdc class AB operation from 1.8 to 2.0 GHz. Rated at 100 watts PEP minimum output power, it is specifically intended for operation as a


    Original     		PDF 1-877-GOLDMOS 1301-PTB Johanson Piston Trimmer G200 RF TRANSISTOR 2GHZ

    Ericsson 20082

    Abstract: 20082 PTB 20082
    Text: e PTB 20082 15 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion


    Original     		PDF 1-877-GOLDMOS 1301-PTB Ericsson 20082 20082 PTB 20082

    Ericsson 20082

    Abstract: No abstract text available
    Text: e PTB 20082 15 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion


    Original     		PDF 1-877-GOLDMOS 1301-PTB Ericsson 20082

    8801

    Abstract: No abstract text available
    Text: e PTB 20176 5 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power


    Original     		PDF 1-877-GOLDMOS 1301-PTB 8801

    Johanson Piston Trimmer

    Abstract: Transistor 025l
    Text: e PTB 20235 70 Watts, 2.1–2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP power output, it is specifically intended for operation as a final stage


    Original     		PDF 1-877-GOLDMOS 1301-PTB Johanson Piston Trimmer Transistor 025l

    RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

    Abstract: 20174 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ
    Text: e PTB 20174 90 Watts, 1400–1600 MHz RF Power Transistor Description The 20174 is an NPN, common emitter RF power transistor intended for 26 Vdc class AB operation from 1400 to 1600 MHz. Rated at 90 watts minimum output power, it may be used for both CW and PEP


    Original     		PDF 5801-PC 1-877-GOLDMOS 1301-PTB RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 20174 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

    Johanson Piston Trimmer

    Abstract: G200
    Text: e PTB 20235 70 Watts, 2.1–2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output power, it is specifically intended for operation as a


    Original     		PDF 1-877-GOLDMOS 1301-PTB Johanson Piston Trimmer G200

    Johanson Piston Trimmer

    Abstract: G200 3 w RF POWER TRANSISTOR NPN 5.8 ghz
    Text: e PTB 20202 125 Watts, 1465–1513 MHz Cellular/DAB RF Power Transistor Description The 20202 is an NPN common emitter RF power transistor intended for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 125 watts minimum output power, it is specifically intended for cellular


    Original     		PDF 1-877-GOLDMOS 1301-PTB Johanson Piston Trimmer G200 3 w RF POWER TRANSISTOR NPN 5.8 ghz

    rf mosfet ericsson

    Abstract: k1206 cgs resistor c7
    Text: e PTF 10112 60 Watts, 1.8–2.0 GHz LDMOS Field Effect Transistor Description The 10112 is a common source n-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts minimum output power. Ion implantation,


    Original     		PDF K1206 G-200, 1-877-GOLDMOS 1301-PTF rf mosfet ericsson k1206 cgs resistor c7

    "RF Power Transistor"

    Abstract: PTB 20264
    Text: e PTB 20264 10 Watts, 1.8–1.9 GHz Cellular Radio RF Power Transistor Description The 20264 is an NPN, common emitter RF power transistor intended for 26 Vdc class AB operation from 1.8 to 1.9 GHz. Rated at 10 watts power output, it may be used for both CW and PEP applications. Ion


    Original     		PDF 1-877-GOLDMOS 1301-PTB "RF Power Transistor" PTB 20264

    G200

    Abstract: K1206 103 smt resistor
    Text: PTF 10112 60 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output.


    Original     		PDF K1206 1-877-GOLDMOS 1301-PTF G200 K1206 103 smt resistor

    9434

    Abstract: "RF Power Transistor"
    Text: e PTB 20264 10 Watts, 1.8–1.9 GHz Cellular Radio RF Power Transistor Description The 20264 is an NPN, common emitter RF power transistor intended for 26 Vdc class AB operation from 1.8 to 1.9 GHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP


    Original     		PDF 1-877-GOLDMOS 1301-PTB 9434 "RF Power Transistor"

    smt a1 transistor

    Abstract: A1234 G200 PTF 10021
    Text: PTF 10021 30 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description The PTF 10021 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. It is


    Original     		PDF 1-877-GOLDMOS 1301-PTF smt a1 transistor A1234 G200 PTF 10021

    R2C TRANSISTOR

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20125 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20125 is an NPN, push-pull RF power transistor intended tor 26 Vdc class AB operation from 1,8 to 2.0 GHz. Rated at 100 w atts PEP minimum output power, it is specifically intended for operation as a


    OCR Scan     		PDF

    transistor 20201

    Abstract: jarvis
    Text: ERICSSON ^ PTB 20176 5 Watts, 1.78-1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20176 5 Watts, 1.78-1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power


    OCR Scan     		PDF

    c38 transistor

    Abstract: 2160 transistor Johanson Piston Trimmer
    Text: ERICSSON ^ PTB 20235 70 Watts, 2.1-2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output power, it is specifically intended for operation as a


    OCR Scan     		PDF BATC100) c38 transistor 2160 transistor Johanson Piston Trimmer

    c38 transistor

    Abstract: 3 w RF POWER TRANSISTOR NPN 5.8 ghz
    Text: ERICSSON ^ PTB 20125 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20125 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation across the 1.8 to 2.0 GHz band. Rated at 100 w atts PEP minim um output power, it is specifically intended for


    OCR Scan     		PDF

    RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

    Abstract: RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 20174 RF NPN POWER TRANSISTOR 2 WATT 2 GHZ
    Text: ERICSSON ^ PTB 20174 90 Watts, 1400-1600 MHz RF Power Transistor Description T he 20174 is an NPN, com m on em itter RF power transistor intended for 26 Vdc class AB operation from 1400 to 1600 MHz. Rated at 90 watts minim um output power, it may be used for both C W and PEP


    OCR Scan     		PDF 5801-PC RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 20174 RF NPN POWER TRANSISTOR 2 WATT 2 GHZ

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20174 90 Watts, 1400-1600 MHz RF Power Transistor Description The 20174 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across the 1400 to 1600 MHz frequency band. Rated at 90 watts minimum output power, it may be used for


    OCR Scan     		PDF 5801-PC

    k1206

    Abstract: Ericsson B
    Text: ERICSSON 0 PTF 10112 60 Watts, 1.8-2.0 GHz LDMOS Field Effect Transistor Description The 10112 is a common source n-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts minimum output power. Ion implantation,


    OCR Scan     		PDF K1206 G-200, 1-877-GOLDMOS 1301-PTF10112 k1206 Ericsson B

    acrian RF POWER TRANSISTOR

    Abstract: 58W45 2023-6T microwave amplifier 2.4 ghz 10 watts 2023-15 acrian inc
    Text: T? ACRIAN INC GENERAL DE I D lflE T T fl 000142D 4 | 2023-1.5 D E S C R IP TIO N 1.5 WATTS - 22 VOLTS 2.0-2.3 GHZ The 2023-1.5 is an internally matched common base transistor providing 3 watts of RF CW output power across the 2000-2300 MHz band. This hermetically sealed


    OCR Scan     		PDF 2023-6T lc-10mA 100mA, acrian RF POWER TRANSISTOR 58W45 2023-6T microwave amplifier 2.4 ghz 10 watts 2023-15 acrian inc

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTE 20264* 10 Watts, 1.8-1.9 GHz Cellular Radio RF Power Transistor Description The 20264 is an NPN, com m on em itter RF power transistor intended for 26 Vdc class AB operation from 1.8 to 1.9 GHz. Rated at 10 watts m inim um ou tput power, it m ay be used fo r both CW and PEP


    OCR Scan     		PDF

    transistor d 1557

    Abstract: No abstract text available
    Text: ERICSSON ^ PTF 10021 30 Watts, 1.4-1.6 GHz LDMOS Field Effect Transistor Description The 10021 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for linear driver and final applica­ tions in the 1.4 to 1.6 GHz range such as DAB/DAR. it is rated at 30


    OCR Scan     		PDF G-200, transistor d 1557