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    TRANSISTOR RTY Search Results

    TRANSISTOR RTY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR RTY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    NEC IC D 553 C

    Abstract: nec 2741 702 mini transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.


    OCR Scan     		PDF 2SC4226 2SC4226 SC-70 2SG4226-T1 NEC IC D 553 C nec 2741 702 mini transistor

    transistor NEC D 822 P

    Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.


    OCR Scan     		PDF 2SC4228 2SC4228 transistor NEC D 822 P NEC D 986 transistor NEC B 617 transistor NEC D 587 r44 marking transistor D 2624

    transistor NEC D 822 P

    Abstract: NEC D 822 P transistor NEC D 587 2sc3355 transistor NEC B 617 nec a 634 transistor marking S00 TRANSISTOR b 772 p
    Text: DATA SHEET SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise PACKAGE DIMENSIONS in millimeters inches am plifier at VHF, UHF and CATV band.


    OCR Scan     		PDF 2SC3355 2SC3355 transistor NEC D 822 P NEC D 822 P transistor NEC D 587 transistor NEC B 617 nec a 634 transistor marking S00 TRANSISTOR b 772 p

    transistor D 2395

    Abstract: NEC 2501 re 443
    Text: DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise am plifier at VHF through UHF band.


    OCR Scan     		PDF 2SC4225 2SC4225 transistor D 2395 NEC 2501 re 443

    PT 6062A

    Abstract: EL1202 1B2 zener diode 2SD1702 IEI-1213 MEI-1202 MF-1134 1702 NPN transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SD1702 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 17 02 is NPN silicon epitaxial darlington transistor designed for pulse m otor, printer driver, solenoid driver. FEATURES PACKAGE DIMENSIONS in millimeters


    OCR Scan     		PDF 2SD1702 2SD1702 PT 6062A EL1202 1B2 zener diode IEI-1213 MEI-1202 MF-1134 1702 NPN transistor

    nec 817

    Abstract: MARKING TRANSISTOR T44 PT4250 2SC3545
    Text: DATA SHEET SILICON TRANSISTOR 2SC3545 UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3545 is an NPN silicon epitaxial transistor intended for use as PACKAGE DIMENSIONS Units: mm UHF oscillator and mixer in a tuner of a TV receiver.


    OCR Scan     		PDF 2SC3545 2SC3545 nec 817 MARKING TRANSISTOR T44 PT4250

    u101b

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR _ j f P A 101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS Units in mm • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)


    OCR Scan     		PDF uPA101B 14-pin tPA101G u101b

    transistor NEC D 822 P

    Abstract: NEC D 822 P transistor c 6093 Nec b 616 NEC 2533 lem 703 transistor 3866 s t 3866 power transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SC4568 NPN SILICON EPITAXIAL TRANSISTOR UHF TV TUNER OSC/MIXER DESCRIPTION PACKAGE DIMENSIONS The 2SC4568 is an NPN silicon epitaxial transistor intended for use as Units: mm UHF oscillator and UHF mixer in a tuner of TV receiver.


    OCR Scan     		PDF 2SC4568 2SC4568 SC-59 transistor NEC D 822 P NEC D 822 P transistor c 6093 Nec b 616 NEC 2533 lem 703 transistor 3866 s t 3866 power transistor

    marking tr

    Abstract: 2SD1699 IEI-1213 MEI-1202 MF-1134 L1207
    Text: DATA SHEET SILICON TRANSISTOR 2SD1699 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 16 99 is NPN silicon epitaxial darlington transistor designed for pulse m otor, printer driver, solenoid driver. Circuits. FEATURES • High DC Current gain.


    OCR Scan     		PDF 2SD1699 2SD1699 marking tr IEI-1213 MEI-1202 MF-1134 L1207

    ZO 107 MA

    Abstract: 341S
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low


    OCR Scan     		PDF 2SC5009 2SC5009 ZO 107 MA 341S

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC COMPOUND TRANSISTOR _jfPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIMENSIONS Units in mm FEATURES • TW O BUILT-IN DIFFER EN TIA L AM PLIFIER CIRCUITS: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)


    OCR Scan     		PDF uPA102 PA102B: PA102G: 14-pin PA102

    transistor NEC D 582

    Abstract: AN 7591 POWER AMPLIFIER Nec b 616 an 7591
    Text: DATA SHEET SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR D ES C R IP TIO N The 2SC3583 is an NPN epitaxial silicon transistor designed for use in PACKAGE DIMENSIONS low-noise and small signal amplifiers from VHF band to UHF band. Low-


    OCR Scan     		PDF 2SC3583 2SC3583 transistor NEC D 582 AN 7591 POWER AMPLIFIER Nec b 616 an 7591

    NEC IC D 553 C

    Abstract: nec d 588 nec 817 D 5038 transistor PE 7058 TRANSISTOR R46 p10367 transistor NEC D 586 NEC D 586 RIO R47
    Text: DATA SHEET SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal am plifiers from VHF band to UHF band.


    OCR Scan     		PDF 2SC4095 2SC4095 NEC IC D 553 C nec d 588 nec 817 D 5038 transistor PE 7058 TRANSISTOR R46 p10367 transistor NEC D 586 NEC D 586 RIO R47

    NEC 1357

    Abstract: LA 8873 TRANSISTOR C 4460
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the


    OCR Scan     		PDF 2SC5004 2SC5004 NEC 1357 LA 8873 TRANSISTOR C 4460

    SN 4931

    Abstract: 2sc 3476 2SC 1885 SN 4931 N
    Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the


    OCR Scan     		PDF 2SC5005 2SC5005 SN 4931 2sc 3476 2SC 1885 SN 4931 N

    t416

    Abstract: 817 CN
    Text: DISCRETE SEMICONDUCTORS PDTC114YE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE


    OCR Scan     		PDF PDTC114YE PDTC114YE 5002/00/03/pp8 t416 817 CN

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PMST3906 PNP switching transistor 1999 Apr 22 Product specification Supersedes data of 1997 May 27 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP switching transistor PMST3906 FEATURES PINNING


    OCR Scan     		PDF PMST3906 PMST3906 OT323 PMST3904. MAM048 115002/00/03/pp8

    marking RK sot323

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PMST4401 NPN switching transistor 1999 Apr 22 Product specification Supersedes data of 1997 May 07 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN switching transistor PMST4401 FEATURES PINNING


    OCR Scan     		PDF PMST4401 PMST4401 OT323 PMST4403. OT323) 115002/00/03/pp8 marking RK sot323

    transistor NEC B 617

    Abstract: nec. 5.5 473
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range


    OCR Scan     		PDF 2SC5007 2SC5007 transistor NEC B 617 nec. 5.5 473

    SOT223 marking SG

    Abstract: MARKING SG SOT223 marking sot223 GY
    Text: DISCRETE SEMICONDUCTORS SHEET PZT4403 PNP switching transistor Product specification Philips Semiconductors 1999 May 10 PHILIPS Philips Semiconductors Product specification PNP switching transistor FEATURES PZT4403 PINNING • High current max. 600 mA PIN


    OCR Scan     		PDF PZT4403 PZT4403 OT223 PZT4401. ZT4403 OT223) 15002/00/01/pp8 SOT223 marking SG MARKING SG SOT223 marking sot223 GY

    transistor 2sc 1586

    Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range


    OCR Scan     		PDF 2SC5006 2SC5006 transistor 2sc 1586 B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor

    BF824W

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BF824W PNP medium frequency transistor Product specification Supersedes data of 1997 Jul 07 Philips Sem iconductors 1999 Apr 15 PHILIPS PHILIPS Philips Semiconductors Product specification PNP medium frequency transistor BF824W FEATURES


    OCR Scan     		PDF BF824W BF824W F824W MAM048 115002/00/03/pp8

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PZT2907A PNP switching transistor 1999 Apr 14 Product specification Supersedes data of 1997 Jun 02 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP switching transistor PZT2907A


    OCR Scan     		PDF PZT2907A PZT2907A OT223 PZT2222A. MAM288 OT223) 115002/00/03/pp8