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    TRANSISTOR RZA B Search Results

    TRANSISTOR RZA B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR RZA B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    74243

    Abstract: TL431 An "magnetic less" GFS MAGNETICS HV9120 390VDC ceramic capacitor 220pf 63V
    Text: HV91 Series Application Note AN-H13 Designing High-Performance Flyback Converters with the HV9110 and HV9120 by Ray Ruble, Applications Engineer Introduction Although the HV91XX family of PWM ICs can be used to control single-switch converters of any topology or size, their primary


    Original     		PDF AN-H13 HV9110 HV9120 HV91XX FMMT2222 FMMT2907 74243 TL431 An "magnetic less" GFS MAGNETICS HV9120 390VDC ceramic capacitor 220pf 63V

    TL431 An

    Abstract: HV9110 HV9120 IRF530
    Text: HV91 Series Application Note AN-H13 Designing High-Performance Flyback Converters with the HV9110 and HV9120 by Ray Ruble, Applications Engineer Introduction the output inductance to discharge into it. Discontinuous-mode operation merely means that all the energy neglecting losses


    Original     		PDF AN-H13 HV9110 HV9120 HV91XX 100KHz. 500KHz TL431 An HV9120 IRF530

    ats2300

    Abstract: ZENER Diode b212 ECS MOTHERBOARD pcb CIRCUIT diagram teltone tls 3 ATS010 si3006-B Si3006-B-FT RJ11 4 PIN JACK MODULE SPEC SHEET so8e pad CR0402-16W-000T
    Text: AN94 Si2401 M ODEM D ESIGNER ’ S G UIDE 1. Introduction This application note is intended to supplement the Si2401 data sheet and is divided into two sections: The "Functional Description" on page 4 and the "Software Design Reference" on page 15. The Hardware Design


    Original     		PDF Si2401 ats2300 ZENER Diode b212 ECS MOTHERBOARD pcb CIRCUIT diagram teltone tls 3 ATS010 si3006-B Si3006-B-FT RJ11 4 PIN JACK MODULE SPEC SHEET so8e pad CR0402-16W-000T

    k3882

    Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
    Text: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d


    OCR Scan     		PDF