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    TRANSISTOR S 2606 Search Results

    TRANSISTOR S 2606 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S 2606 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2719

    Abstract: pt 2313 3l-5063 cdb 413 h044 IC 566 vco 05S2 PA33 TS33 3L50
    Text: > > i; 3 n y > i f z . 9 Silicon Transistor N P N X . k ' f + Z 'T J U m S s fJ 3 > Y ' 9 > i > 7 > 9 NPN Silicon Epitaxial Transistor High Frequency Amplifier, Medium Speed Switching Industrial Use 5 .2 P O 2 S A — 600 t 1 1 5 2 ¿ m W 3 > V CEo = y /


    OCR Scan     		PDF 02SA1152Â SC-43B PWS10 3l-5063 2SC2719 pt 2313 cdb 413 h044 IC 566 vco 05S2 PA33 TS33 3L50

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    UPA79C

    Abstract: PA79C uPA79 til 31a RA8040 JS 2204 hfe 4538 w0422 vtc 082 J2/JS 2204
    Text: NEC a m + T ix f* Com pound Transistor A V PA79C -y°\ y ? Y=7^'<^ S NPN Silicon Epitaxial Transistor Array Mini Printer Driver It/r'fX- Yfrbtihl E S & S Ä ÿ ¿¿PA79C i, N PN ÿ i ) 3 > ( - 7 > ÿ X ^ i / <J ïvïICit Ltz \'ÿ>-J*?7l"(Tto ÎÜ * fâ W ' Œ * i ® < MOS IC c o m ijffi- ^ T - itS lO O m A S f i O t f ÿ


    OCR Scan     		PDF uPA79C PA79C UPA79C PA79C uPA79 til 31a RA8040 JS 2204 hfe 4538 w0422 vtc 082 J2/JS 2204

    2SC3733

    Abstract: 2SC3733-T La HL33 2SA1460 IMWS1
    Text: SEC j m = f T iY C * S ilicon T ran sis to r i 2 '> 7 iV V & is •; n > P N P :e S A 1 4 6 ^ PNP Silicon Epitaxial Transistor High Speed Switching, High Frequency Amplifier


    OCR Scan     		PDF 2SA1460 2SC3733 12/PACKAGE PWS10 CycleS50 2SC3733-T La HL33 2SA1460 IMWS1

    2SA1462

    Abstract: JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor
    Text: NEC i m=ïTivfx A Silicon Transistor 2SA1462 P N P i b " ^ + '> 7 J U M '> ' n > b ^ > ' > * 9 PN P Silicon Epitaxial Transistor High Speed Switching ^ S / P A C K A G E D IM EN SIO N S #ë/FEA TU RES O X - í v f > / 'iÈ ÎÉ Â 'j iË ^ o Unit : mm) ton : 9.0 ns T Y P . , t stg : 16 ns T Y P . ,


    OCR Scan     		PDF 2SA1462 o2SC3735 2SA1462 JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor

    2SC3616

    Abstract: PA33 ScansUX881
    Text: NEC j '> IJ 3 > Silicon Transistor 2SC3616 N P N l b ° ^ + '> 7 ; i/i'> lJ b =7>i> 7.9 NPN Silicon Epitaxial Transistor High Gain Amplifier W */F E A T U R E S K W M / P A C K A G E D IM E N SIO N S Unit : mm O igjhpE'C’t ’ o hFE = 8 0 0 ~ 3 2 0 0 @ V ce = 2 . 0 V, Ic = 300 mA


    OCR Scan     		PDF 2SC3616 PWS10 Cycled50 SC-43B 03---in-----in 000--i PA33 ScansUX881

    AH5E

    Abstract: ic 3773 g0532 JE 33 T108 marking "l34" AH-045 fI0262
    Text: NEC - f — S 7 • Ss— K Compound Transistor FA1A4P 'J □ > S#lF*3ìScNPN:i: f t W t 'iM i ^ m m l R i = 10 kQ , R 2 = 47 kQ ) 2 .8 + 0.2 0.65—8; i s 1.5 O F N 1 A 4 P t => > 7 ° ' ) 9 y 9 ') T l È f f l T 'è i t . II s zj u 9 9 •^ - x f S i ' I E


    OCR Scan     		PDF PWS10 AH5E ic 3773 g0532 JE 33 T108 marking "l34" AH-045 fI0262

    P-Channel Depletion Mode FET

    Abstract: P-Channel Depletion-Mode FET E202 2N3631 2N3823 Junction FETs JFETs 2N2606 2N3329 E202 P-Channel Depletion Mosfets
    Text: AN73-7 s S ilic o n ix APPLICATION NOTE An Introduction to FETs INTRODUCTION In fact, FET technology today allows a greater packaging density in large-scale integrated circuits LSI than would ever be possible w ith bipolar devices. The basic principle o f the field-effect transistor (F E T ) has


    OCR Scan     		PDF

    3e tRANSISTOR

    Abstract: TT3010 TRANSISTOR XL08 4-0992 XL08 2SK446 SK-446 JE 33 T108 JE 720 transistor
    Text: NEC j m + T / v r x — Y = 7 > i > * 9 M O S Field E ffe c t P o w e r T r a n s is t o r A _ 2SK446 N f t ^ ^ < 7 y - ^ M O S F E T > jim m N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2 S K 4 4 6 ii, nmm/ p a c k a g e FETT,


    OCR Scan     		PDF 2SK446 SK446Ã Tstg64 0734i28- 075J22 26-/E 3e tRANSISTOR TT3010 TRANSISTOR XL08 4-0992 XL08 2SK446 SK-446 JE 33 T108 JE 720 transistor

    se5020

    Abstract: marking R1L mot-10 2SA1464 2SC3739 2SC373 MECM
    Text: NEC j m *= rJ Ÿ T X '> I J =3 > b S ilic o n T ra n s is to r A 2SA1464 PNP i k ^ r s ] Ja J /; + y T iP iv 'J =i > h l > ï £> <£ 7 'm PNP Silicon Epitaxial Transistor High Frequency Amplifier and Switching ^ 0 / P A C K A G E DIMENSIONS Unit : mm # * / FEATURES


    OCR Scan     		PDF 2SA1464 2SC3739 se5020 marking R1L mot-10 2SA1464 2SC3739 2SC373 MECM

    r460 FET

    Abstract: tt 6222-1 2SK786 tt 6222 TC-6222 transistor GR 346 L0623 IR 8115 N0245 3e tRANSISTOR
    Text: MOS y<T7 — N MOS Field Effect P ow er Transistor FET I i f f l > YJP ^ - M O S F E T 2SK786 Ü, N T * > & & & f g < , x 4 -y f - > ¿ X T is ' , i S i f J i f c x 4 D C - D C 3 > '< - ? l z M M T t o # i t O V d s s = 900 V , Id do = 3 O fg jtX ^ 7 ? t o


    OCR Scan     		PDF 2SK786 32-fS 27l-tt 29-JtftW 354-fi 26-Sli r460 FET tt 6222-1 2SK786 tt 6222 TC-6222 transistor GR 346 L0623 IR 8115 N0245 3e tRANSISTOR

    sw 2604 ic

    Abstract: ic sw 2604 sw 2604 SW 2596 AF 2596 ATC 2603 2sc2592 138B 2SA1112 transistor C 2615
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    MRF406

    Abstract: MRF406 MOTOROLA 20WPEP
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 20 W PEP - 3 0 M H z RF POWER TRANSISTOR NPN S IL IC O N NPN SILICO N RF POWER TRANSISTOR . . . designed p r im a r ily fo r a p p lic a tio n as a pow er lin e a r a m p lifie r fro m 2 .0 to 30 M Hz. • S p e cifie d 12.5 V o lt, 3 0 M H z C h ara cteristics O u tp u t Power = 20 W ÌPEP)


    OCR Scan     		PDF MRF406 MRF406 MRF406 MOTOROLA 20WPEP

    upa74ha

    Abstract: UPA74 PA74H gw 348 PA74HA k 2445 transistor
    Text: NEC Aj i ï T / \ W V -7 9 Com pound Transistor f x N L it ¿¿PA74HA P N X + □ ] h I M ift fé S H f& K iJ t I B fll NPN Silicon Epitaxial Compound Transistor Differential Amplifier #Ä /FEA TU RES O 1 chip ffîiè 'C Jb h flìsb , - 4 T 1 Ë J V B E = 2 mV T Y P . )


    OCR Scan     		PDF uPA74HA UPA74 PA74H gw 348 PA74HA k 2445 transistor

    mrf857

    Abstract: RF857 mrf857s
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF857 MRF857S NPN Silicon RF Power Transistor D e s ig n e d to r 2 4 V o lt U H F la rg e -s ig n a l, c o m m o n e m itte r, c la s s A lin e a r a m p lifie r a p p lica tio n s in in d u stria l a n d co m m e rcia l e q u ip m e n t o p e ra tin g in the


    OCR Scan     		PDF MRF857 RF857 MRF857S

    8115, transistor

    Abstract: TFK03 2SC3360 T108
    Text: NEC j '> U =1 > h i> J* ^ T r a n s is t o r = 7 > S ilic o n 2SC3360 N P N x t °^ + '> 7 ; P i'> ¡ Ü I Î / ± ± i ifs «fc * U =3 > h ^ -r -y ^ V X ^ NPN Epitaxial Silicon Transistor High Voltage Amplifier and Switching ^ B U / P A C K A G E DIMENSIONS


    OCR Scan     		PDF 2SA13301 CycleS50 8115, transistor TFK03 2SC3360 T108

    BT 815 transistor

    Abstract: Transistor BFR 96 pt 4115 2SA1625 PA33 T108 X108 ih 0565 r EI 33 LX108
    Text: NEC l i f A I / 1] Silicon Tran sistor i i f X 2SA1625 PNP = S il£ i PNP Silicon Triple Diffused Transistor High Speed, High Voltage Switching mm O i^ ii E t 'C 'i'o V Ce o = - 4 0 0 ^ -fi • mm V V CE(sat)^ - 0 .5 V O T A 7 f s tf — 1 . 0 (T a — m


    OCR Scan     		PDF 2SA1625 PWS300 SC-43B BT 815 transistor Transistor BFR 96 pt 4115 2SA1625 PA33 T108 X108 ih 0565 r EI 33 LX108

    uPA77HA

    Abstract: upa77 Power amplifier transisitor ST460 Power Transisitor 100V 2A 251U EBMS FST460
    Text: NEC A. l i T / \ m .'g - h Com pound Transisitor ' i 7 ¿¿PA77HA PNP h = 7 > i> 7 ,5 U f c Jl& jg S & Jif liffl PNP Silicon Epitaxial Compound Transistor Differential Amplifier ^ 0 / P A C K A G E D IM ENSIONS Unit: mm ^ / F E A T U R E S 01 chip nm.'chhtztb, ^ r i 4 ( j v b e = 2 mv t y p . ) ^ c ,


    OCR Scan     		PDF uPA77HA K0958 K0985 upa77 Power amplifier transisitor ST460 Power Transisitor 100V 2A 251U EBMS FST460

    Transistor S 2606

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Am plifier Transistor NPN Silicon M PS6717 COLLECTOR 3 1 EMITTER MAXIM UM RATINGS Rating C o lle c to r - E m itter Voltage C o lle c to r - Base Voltage E m itte r-B a s e Voltage Symbol Value Unit V C EO 80


    OCR Scan     		PDF PS6717 Transistor S 2606

    2SK163

    Abstract: 2sk163 transistor Free 9014 transistor 2sk163 PA33 SS 9014 TC-5466
    Text: NEC j m = t= r iv r x J u n c t io n Field E ffe c t T r a n s is to r A 2SJ44 V 3 h = 7 > i> * 9 P-Channel Silicon Jun ction Field Effect Transistor Audio Frequercy Low Noise Amplifier ^ • » 0 / P A C K A G E D IM EN SIO N S ^/FEATU RES Unit : mm O ¡15I f EE, H i g h


    OCR Scan     		PDF 02SK163 SC-43B 545tS4i8 2SK163 2sk163 transistor Free 9014 transistor 2sk163 PA33 SS 9014 TC-5466

    8115, transistor

    Abstract: 7011 NPN TRANSISTOR 2SC3209 NPN Transistor SE5010 2SC3209 T108 8115 TRANSISTOR 26236 2083m
    Text: NEC A l i f / v Silicon T ra n sisto r A t z 2SC3209 NPN NPN Silicon Triple Diffused Transistor Chroma Output Use of Color TV or Driver of Horizontal Deflection W-MEE]/ PACKAGE DIMENSIONS ^ /F E A T U R E S U n i t : mm o ifij¡itB E "C o Vcbo —300 V,


    OCR Scan     		PDF pk092 8115, transistor 7011 NPN TRANSISTOR 2SC3209 NPN Transistor SE5010 2SC3209 T108 8115 TRANSISTOR 26236 2083m

    Transistor BC 227

    Abstract: TRANSISTOR BC 456 TRANSISTOR BC 413 AA1A4M PA33 T108 transistor BC 247 TRANSISTOR BC 413 b 3ete ATT 1177
    Text: / 7 s— ^ - 2 / — h N EC i i r / \ f 7 J ^ Com pound Transistor AA1A4M Í A 1*1Ü # c N P N X '> ij =¡> h 7 V i > X ^ ® a ip - f i : mm o / < ^ T * íÉ # l ^ [*l/t L X ^ i i"o (R ! = 10 k ñ , R 2= 10 kQ) o AN1A4M t = J > V i ) S > ÿ i ) X î t m X è £ t o


    OCR Scan     		PDF Ta-25 CycleS50 Transistor BC 227 TRANSISTOR BC 456 TRANSISTOR BC 413 AA1A4M PA33 T108 transistor BC 247 TRANSISTOR BC 413 b 3ete ATT 1177

    Untitled

    Abstract: No abstract text available
    Text: NEC ? t Compound Transistor / \ T 7 *$ BN1F4N it o ^ M T x f f iiÆ è ^ I/ lL T v ^ l'o Ri = 22 k£2, R2= 47 kQ ¥ o BA1F4N t 3 > 7° U / > 9 >J T 'ë É ( T a = 25 °C ) II H& s 3 1/^^- • < - x F IIE n i/ 9 9 X $ '7 9 -60 V V CEO -50 V V ebo -10 V IC(DC)


    OCR Scan     		PDF PWsS10 CycleS50

    TC-6252

    Abstract: TC6252 WJ M64
    Text: - r S • — h * SEC i ï r / V C om po un d Transistor Î 7 GN1F4Z ^ 4f J i ^ I U O y< yf 7 l*3 Ü X Î É tf l £ R i = 2 2 L X ^ Î 1 ( - P - Ì Ì ! m m k Q ) B O O o G A 1F 4 Z 3 t > - 7° U / 9 > 'J T l È f f l T ' ë ì e t ( T a — 25 °C) m


    OCR Scan     		PDF Cycled50 82cMS25Ã TC-6252 TC6252 WJ M64