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    TRANSISTOR S 8550 Search Results

    TRANSISTOR S 8550 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S 8550 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    8550D transistor

    Abstract: BR 8550D BR 8050 BR 8550 D 8550D 8550c st 8550d transistor 8050 d npn 8050 br 8550 NPN Transistor
    Text: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


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    100mA 800mA 800mA, 8550D transistor BR 8550D BR 8050 BR 8550 D 8550D 8550c st 8550d transistor 8050 d npn 8050 br 8550 NPN Transistor PDF

    BR 8550D

    Abstract: 8550D transistor 8550C transistor 8550D 8550D br 8550c NPN Transistor transistor 8550D PNP br 8550 NPN Transistor NPN transistor 8550d BR 8050
    Text: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


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    100mA 800mA 800mA, BR 8550D 8550D transistor 8550C transistor 8550D 8550D br 8550c NPN Transistor transistor 8550D PNP br 8550 NPN Transistor NPN transistor 8550d BR 8050 PDF

    he 8050s

    Abstract: transistor marking B9 MARKING B9 sot-23 8550SL UTC 8550SL
    Text: UNISONIC TECHNOLOGIES CO., 8550S PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR FEATURES 2 1 *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complimentary to 8050S 3 MARKING SOT-23 B9 *Pb-free plating product number: 8550SL


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    8550S 700mA 8050S OT-23 8550SL 8550S-AE3-R 8550SL-AE3-R OT-23 QW-R206-002 he 8050s transistor marking B9 MARKING B9 sot-23 8550SL UTC 8550SL PDF

    C8550S

    Abstract: 8550S 8550SL transistor marking B9
    Text: UNISONIC TECHNOLOGIES CO.,LTD. 8550S PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 2 FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complimentary to 8050S 1 3 SOT-23 MARKING *Pb-free plating product number: 8550SL


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    8550S 700mA 8050S OT-23 8550SL 8550S-AE3-R 8550SL-AE3-R OT-23 QW-R206-002 C8550S 8550S 8550SL transistor marking B9 PDF

    BR 8550

    Abstract: br 8550 NPN Transistor st 8550d st8550d BR 8550 D ST 8550 8550 transistor PNP transistor 8550 8550 pnp transistor st8550c
    Text: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


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    20MHz BR 8550 br 8550 NPN Transistor st 8550d st8550d BR 8550 D ST 8550 8550 transistor PNP transistor 8550 8550 pnp transistor st8550c PDF

    BR 8550

    Abstract: br 8550 NPN Transistor BR 8550 D st8550d s 8550 d PNP transistor 8550 s 8550 transistors PNP 8550 8550 br 8550 c NPN Transistor
    Text: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


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    20MHz BR 8550 br 8550 NPN Transistor BR 8550 D st8550d s 8550 d PNP transistor 8550 s 8550 transistors PNP 8550 8550 br 8550 c NPN Transistor PDF

    st8550d

    Abstract: br 8550 NPN Transistor BR 8550 BR 8550 D st8550c st 8550d PNP transistor 8550 8550 NPN Transistor BR 8550 transistor 8550b
    Text: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


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    20MHz st8550d br 8550 NPN Transistor BR 8550 BR 8550 D st8550c st 8550d PNP transistor 8550 8550 NPN Transistor BR 8550 transistor 8550b PDF

    BR 8550

    Abstract: br 8550 NPN Transistor st8550d BR 8550 D st 8550d 8550 NPN Transistor PNP transistor 8550 BR 8550 transistor st 8550 br 8550 c
    Text: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


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    20MHz BR 8550 br 8550 NPN Transistor st8550d BR 8550 D st 8550d 8550 NPN Transistor PNP transistor 8550 BR 8550 transistor st 8550 br 8550 c PDF

    s 8550 d

    Abstract: Bc 8550 transistor 8550 transistor bc 8550 8550 transistor PNP 8550 8550D transistor PNP transistor 8550 PNP transistor TO-92 BC 8550c
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 8550 SR12 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO VALUE 25 UNITS


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    C-120 190505E s 8550 d Bc 8550 transistor 8550 transistor bc 8550 8550 transistor PNP 8550 8550D transistor PNP transistor 8550 PNP transistor TO-92 BC 8550c PDF

    8550 sot-23

    Abstract: smd 8550 transistor 8550 sot-23 pnp transistor smd marking BA sot-23 equivalent transistor 8550 transistor 8550 smd 8550 SOT-23 PACKAGE PNP 8550 transistor smd marking BA RE 8550 smd
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR TRANSISTOR CMBT 8550 SOT-23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3


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    OT-23 100uA, C-120 8550 sot-23 smd 8550 transistor 8550 sot-23 pnp transistor smd marking BA sot-23 equivalent transistor 8550 transistor 8550 smd 8550 SOT-23 PACKAGE PNP 8550 transistor smd marking BA RE 8550 smd PDF

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302 PDF

    diode st 4148

    Abstract: ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148 1N4001-1N4007
    Text: TRANSISTOR & DIODE Transistor -S T 8050 - 1.5A TO-92 - ST 8050 (TO-92) - ST 8550 - 1.5A (TO-92) - ST 8550 (TO-92) - ST 9011 (TO-92) - ST 9012 (TO-92) - ST 9013 (TO-92) - ST 9014 (TO-92 -S T 9015 (TO-92) - ST 9016 (TO-92) -S T 9018 (TO-92) o - MMBT8050LT1 -1.5A (SOT-23)


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    MMBT8050LT1 OT-23) -LL4001-LL4007 -LL4148 1N4001-1N4007 diode st 4148 ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148 PDF

    200 watt audio ic

    Abstract: ic 8050 8050h
    Text: CRÛ 8050 G E N E R A L D E S C R IP T IO N :- •4 H ie 8 0 5 0 is an NPN epitaxial silicon planar transistor designed for use in the audio ou tp ut stage and converter/inverter circuits. Complem entary to 8550. TO-92A R A T IN G S Note 1 Maximum Temperatures


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    100mA Box69477, 200 watt audio ic ic 8050 8050h PDF

    h 8550 pnp transistor

    Abstract: No abstract text available
    Text: 8550 G E N E R A L D E S C R IP T IO N :- Hie 8550 is a PNP epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. Complementary to 8050. A BSO LU T E M A X IM U M R A T IN G S TO-92A Note 1 Maximum Temperatures


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    O-92A h 8550 pnp transistor PDF

    transistor 8550

    Abstract: CL8550 8550 transistor h 8550 pnp transistor
    Text: CL8550 T 0 -9 2 B oENERAL DESCRIPTION:— The 8550 is a PNP epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. Complementary to 8050. ABSOLUTE M A X IM U M R A T IN G S „ T O -928 (Note 1) Maximum Temperatures


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    CL8550 100mA Boxfe477. transistor 8550 CL8550 8550 transistor h 8550 pnp transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: G EN ER A L D ESC R IP T IO N :Tlie 0050 is an N P N epitaxial silicon planar transistor designed for use in the audio output Com plem entary stage and converter/inverter circuits. T0-92B to 8550. M A X I M U M R A T IN G S Note 1 Maximum Temperatures —55°C to +135°C


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    T0-92B PDF

    c 8550 transistor

    Abstract: 8550 ecb
    Text: T0-92B G EN ER A L D ESC R IP T IO N :Tlie 0 0 5 0 is an NPN epitaxial silicon planar transistor designed for use in the au d io ou tp u t stage and converter/inverter circuits. C om plem entary to 8550. T0-92B M A X IM U M R A T IN G S (Note 1) M axim um Temperatures


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    T0-92B 33mW/Â 25mW/Â 100mA Boxfe477, c 8550 transistor 8550 ecb PDF

    br 8550 NPN Transistor

    Abstract: BR 8550 BR 8550 D 8550 NPN Transistor br 8550 c BR 8550 transistor br 8550 c NPN Transistor c 8550 transistor h 8550 pnp transistor 8550 pnp
    Text: HN 8550 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. 3.6 The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type


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    103mA br 8550 NPN Transistor BR 8550 BR 8550 D 8550 NPN Transistor br 8550 c BR 8550 transistor br 8550 c NPN Transistor c 8550 transistor h 8550 pnp transistor 8550 pnp PDF

    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTERNATIONAL ELECTRONICS LTD. SEMICONDUCTOR TECHNICAL DATA 8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION Package: TO-92 * Complement to 8050 * Collector Current: lc—1.5A * Collector Dissipation Pc=lW TtoF=25°C


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    -100uA 100mA -800mA -800mA -80mA -10mA -50mA PDF

    8050 TRANSISTOR PNP

    Abstract: 8050 8550 8050 pnp transistor transistor 8550 d transistor b 8050
    Text: 8550 GENERAL DESCRIPTION:- ITie 8550 is a PNP epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. Complementary to 8050. ABSOLUTE MAXIMUM RATINGS TO-92A Note 1 Maximum Temperatures —55°C to +135°C


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    O-92A 33mW/Â 25mW/Â 100mA Boxfe477, 8050 TRANSISTOR PNP 8050 8550 8050 pnp transistor transistor 8550 d transistor b 8050 PDF

    Untitled

    Abstract: No abstract text available
    Text: 8050A SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA M O T O R D R IV E R * Complement to 8550A * Collector C urrent: Ic=1500mA * Collector D issipation: Pc=lW Ta=25°C ABSOLUTE MAXIMUM RATINGS a t Tan*=25°C


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    1500mA 100uA 800mA 100mA 800mA PDF

    Untitled

    Abstract: No abstract text available
    Text: 8050 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to 8550 * Collector Current: Ic=1500mA * Collector Dissipation: Pc=lW Ta=25°C


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    1500mA 100mA 800mA 80QmA 800mA PDF

    BR 8050 D

    Abstract: transistor br 8050 BR 8050 8050 TRANSISTOR PNP 8050 pnp transistor NPN transistor 8050d transistor b 8050 TRANSISTOR c 8050 80500 TRANSISTOR 8050 d h
    Text: HN 8050 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type


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    103mA BR 8050 D transistor br 8050 BR 8050 8050 TRANSISTOR PNP 8050 pnp transistor NPN transistor 8050d transistor b 8050 TRANSISTOR c 8050 80500 TRANSISTOR 8050 d h PDF

    SN55450

    Abstract: SN55450B transistor D2217 SS451 transistor 1yc SN754S1B d2217
    Text: T E X A S I N S T R -CLIN/INTFC} 8961724 TEXAS IN STR S F § 0^:1.754 0D7SflSD h LIN /IN T F C 91D 75850 D SN55450B THRU SNS5454B SN75451B THRU SN75454B DUAL PERIPHERAL DRIVERS D2217, DECEMBER 1976-REVISED SEPTEMBER 1986 SN55450B . . . J PACKAGE (TOP VIEW)


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    SN55450B SNS5454B SN75451B SN75454B D2217, 1976-REVISED SN55450B SN55450 transistor D2217 SS451 transistor 1yc SN754S1B d2217 PDF