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    TRANSISTOR S PARAMETERS Search Results

    TRANSISTOR S PARAMETERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S PARAMETERS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BULT106D High voltage fast-switching NPN power transistor Features • NPN transistor ■ Low spread of dynamic parameters s t c Applications u d o ) r s ( P t c e t u e d l Description o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u


    Original     		PDF BULT106D

    GE Transistor Manual

    Abstract: transistor k 316 35820 transistor circuit design
    Text: Microwave Transistor Bias Considerations Application Note 944-1 Introduction Often the least considered factor in microwave transistor circuit design is the bias network. Considerable effort is spent in measuring s-parameters, calculating gain, and optimizing


    Original     		PDF 5988-0424EN GE Transistor Manual transistor k 316 35820 transistor circuit design

    Untitled

    Abstract: No abstract text available
    Text: BUL804 High voltage fast-switching NPN Power Transistor General features • NPN Transistor ■ High voltage capability s t c u d o ) r s ( P Description t c e t u e d l o schematicrodiagram s Internal P b e O t e l ) o s ( s t b c u O d Applications o


    Original     		PDF BUL804 2002/93/EC O-220

    S-816A26AMC-BABT2G

    Abstract: TOSHIBA 2SA1213Y RA 816 SL 100 NPN Transistor S-816 S-816A25AMC-BAAT2G S-816A27AMC-BACT2G S816A33
    Text: Rev.5.0_01 EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series The S-816 Series consists of external transistor type positive voltage regulators, which have been developed using the CMOS process. These voltage regulators incorporate an overcurrent


    Original     		PDF S-816 S-816, S-816A26AMC-BABT2G TOSHIBA 2SA1213Y RA 816 SL 100 NPN Transistor S-816A25AMC-BAAT2G S-816A27AMC-BACT2G S816A33

    S-816A26AMC-BABT2G

    Abstract: TOSHIBA 2SA1213Y S-816A27AMC-BACT2G S-816 S-816A25AMC-BAAT2G 2SA1213Y
    Text: Rev.5.1_00 EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series The S-816 Series consists of external transistor type positive voltage regulators, which have been developed using the CMOS process. These voltage regulators incorporate an overcurrent


    Original     		PDF S-816 S-816, S-816A26AMC-BABT2G TOSHIBA 2SA1213Y S-816A27AMC-BACT2G S-816A25AMC-BAAT2G 2SA1213Y

    ST13005 transistor

    Abstract: No abstract text available
    Text: s = 7 S ^7# G S - T H O M S O N Kl gKLiM(s iO(gS ST13005 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . MEDIUM VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED


    OCR Scan     		PDF ST13005 ST13005 transistor

    L128D

    Abstract: BUL128D SC-0351
    Text: n Z Z S C S -T H O M S O N ^ 7# B U L128D HIGH VOLT AG EFAST^S WÏTCHING NPN POWER TRANSISTOR . • . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION


    OCR Scan     		PDF L128D BUL128D GC69490 SC-0351 BUL128D SC-0351

    transistor BC 147

    Abstract: BUL56D transistor bul 38 bc 147 B transistor transistor bc 325
    Text: n r z S G S - T H O M S O N HO i |[Li©fi®iDei BUL58D HIGHVOLTAGEFAST-SWIT CHING NPN POWER TRANSISTOR • . . . . . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR


    OCR Scan     		PDF BUL58D BUL58D S6S-1H0M80HI transistor BC 147 BUL56D transistor bul 38 bc 147 B transistor transistor bc 325

    BUL 380

    Abstract: bul510
    Text: / = 7 *7# S C S - T H O M S O N d[] gi i[LI ra®IQ©i BUL510 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . • . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS VERY HIGH SWITCHING SPEED


    OCR Scan     		PDF BUL510 BUL510 BUL 380

    SC-0351

    Abstract: No abstract text available
    Text: rrr “ 7# sg s -th o m s o n m m s x m iim m im m b u lth s d HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . NPN TRANSISTOR . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE • HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR


    OCR Scan     		PDF BULT118D SC-0351 SC-0351

    BUL128

    Abstract: alu schematic circuit with transistor
    Text: S G S -T H O M S O N «l!3mi ¥[FM[]©S BUL128 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . • « . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION


    OCR Scan     		PDF BUL128 BUL128 BUL128; 62-19C alu schematic circuit with transistor

    Untitled

    Abstract: No abstract text available
    Text: S G S -T H O M S O N RfflD0lsi i[Liera®[i!lDS$ B U L T 1 18D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . NPN TRANSISTOR . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR


    OCR Scan     		PDF SC-0351 BULT118D OT-32 O-126)

    IGT4E10

    Abstract: 4D10 VQE 22 VQE 12 IGT4D10
    Text: IGT4D10.E10 10 AMPERES 400,500 VOLTS EQUIV. Rd S ON =0.27 il Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power M O S F E T S and


    OCR Scan     		PDF IGT4D10 IGT4E10 4D10 VQE 22 VQE 12

    SC-0351

    Abstract: ST13005 transistor 13005 CIRCUIT Transistor 13005- 2 transistor 13005
    Text: SGS-THOMSON S i IHD S T 13005 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . • . . MEDIUM VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS: . ELECTRONIC BALLASTS FOR


    OCR Scan     		PDF O-220 ST13005 SC-0351 SC-0351 ST13005 transistor 13005 CIRCUIT Transistor 13005- 2 transistor 13005

    Untitled

    Abstract: No abstract text available
    Text: s = 7 SGS-THOMSON ^ 7# K l g K L iM ( s iO ( g S B U L D 1 2 8 D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . ORDER CODES : BULD128DA-1 AND BULD128DB-1 . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS


    OCR Scan     		PDF BULD128DA-1 BULD128DB-1

    BUL128D

    Abstract: bul128db
    Text: s = 7 SGS-THOMSON ^7# Kl gKLiM(s iO(gS BUL128D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . ORDERING CODES : BUL128D-A AND BUL128D-B . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR


    OCR Scan     		PDF BUL128D BUL128D-A BUL128D-B BUL128D bul128db

    K105 transistor

    Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11
    Text: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and


    OCR Scan     		PDF IGT4D11 K105 transistor transistor k105 IGT4E11 IGT-4E11

    2SC288A

    Abstract: 2SC288A 5.B
    Text: SEC SILICON TRANSISTOR ELECTRON DEVICE 2SC288A 5-B UHF OSCILLATOR NPN SILICON EPITAXIAL TRANSISTOR "D ISK MOLD" DESCRIPTION PACKAGE DIMENSIONS The 2 S C 2 8 8 A I5 B ) is an NPN silicon epitaxial transistor intended fo r use in m illim e te r s (inch es)


    OCR Scan     		PDF 2SC288A 1300MHz 400MHz 600MHz 2SC288A 5.B

    6d20

    Abstract: 6D-20 IGT8D20 250M BE20 IGT8E20 VQE 23 E
    Text: IGT8D20,E20 1ST TIM S^M OIS 20 AMPERES 400,500 VOLTS EQUIV. Rd S ON = 0.12 O Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and


    OCR Scan     		PDF IGT8D20 6D20- PULSEWIDTHa60 6d20 6D-20 250M BE20 IGT8E20 VQE 23 E

    2SC4867

    Abstract: 16T MARKING 2SC4871 FH201 ZS21 TA-1315 1hz OUTPUT 7CJE
    Text: Ordering number:ENN6117 NPN Epitaxial Planar Silicon Composite Transistor FH201 SAÈÈYOI VCO OSC Circuit Applications Features Package Dimensions • C om p osite type w ith a buffer transistor 2 S C 4 8 7 1 and a oscillator transistor (2 S C 4 8 6 7 ) contained in


    OCR Scan     		PDF ENN6117 FH201 2SC4871) 2SC4867) FH20I 2SC4871 2SC4867, FH201] 7117D7L 0D544b7 2SC4867 16T MARKING FH201 ZS21 TA-1315 1hz OUTPUT 7CJE

    550MH

    Abstract: IGT6D10 IGT6E10
    Text: Preliminary 26.4 4/85 IGT6D10,E10 c a r ' T R M u s T O i i 10 AMPERES 400,500 VOLTS EQUIV. FId S ON = 0.27 Í1 Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device


    OCR Scan     		PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF