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    TRANSISTOR S1P Search Results

    TRANSISTOR S1P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S1P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol


    Original     		PDF FJX2222A 325mW OT-323

    transistor s1p

    Abstract: MARKING S1P S1P transistor FJX2222A ESBC Fairchild dual NPN silicon transistor
    Text: FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol


    Original     		PDF FJX2222A 325mW OT-323 transistor s1p MARKING S1P S1P transistor FJX2222A ESBC Fairchild dual NPN silicon transistor

    MARKING s1P

    Abstract: FJX2222A transistor s1p
    Text: FJX2222A FJX2222A General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF FJX2222A 325mW OT-323 MARKING s1P FJX2222A transistor s1p

    MARKING s1P

    Abstract: FJX2222A
    Text: FJX2222A FJX2222A 3 General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF FJX2222A 325mW OT-323 75ner MARKING s1P FJX2222A

    MARKING s1P

    Abstract: FJX2222A transistor s1p
    Text: FJX2222A FJX2222A 3 General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF FJX2222A 325mW OT-323 75opment. MARKING s1P FJX2222A transistor s1p

    transistor s1p

    Abstract: MARKING s1P
    Text: FJX2222A FJX2222A 3 General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF FJX2222A 325mW OT-323 FJX2222ATF transistor s1p MARKING s1P

    transistor s1p

    Abstract: S1P transistor S1p MARKING F1 SOT-323
    Text: FJX2222A FJX2222A General Purpose Transistor 2 1 NPN Epitaxial Silicon Transistor SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCES Collector-Emitter Voltage


    Original     		PDF FJX2222A OT-323 transistor s1p S1P transistor S1p MARKING F1 SOT-323

    h11E

    Abstract: No abstract text available
    Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2907A / MMBT2907A PNP • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P


    Original     		PDF SMBT2222A/MMBT2222A SMBT2907A MMBT2907A SMBT2222A/MMBT2222A h11E

    SMBT2907AW

    Abstract: MARKING s1P smbt2222a sot23 marking code S1p MARKING BCW66 77 ic marking code transistor marking code 24 24 marking code transistor transf SMBT2222A SOT23
    Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration


    Original     		PDF SMBT2222A/MMBT2222A SMBT2907AW SMBT2222A/MMBT2222A BCW66 SMBT2907AW MARKING s1P smbt2222a sot23 marking code S1p MARKING BCW66 77 ic marking code transistor marking code 24 24 marking code transistor transf SMBT2222A SOT23

    s1P SOT23

    Abstract: 619 SOT23-3 h11e
    Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration


    Original     		PDF SMBT2222A/MMBT2222A SMBT2907AW SMBT2222A/MMBT2222A s1P SOT23 619 SOT23-3 h11e

    h22e

    Abstract: No abstract text available
    Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP Type Marking SMBT2222A/MMBT2222A s1P 1 Pin Configuration 1=B 2=E Package


    Original     		PDF SMBT2222A/MMBT2222A SMBT2907AW SMBT2222A/MMBT2222A h22e

    MARKING s1P

    Abstract: No abstract text available
    Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161


    Original     		PDF SMBT2222A/ MMBT2222A SMBT2907A VPS05161 MARKING s1P

    npn 2222 transistor

    Abstract: MMBT2222A SMBT2222A SMBT2907A MARKING s1P
    Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161


    Original     		PDF SMBT2222A/ MMBT2222A SMBT2907A VPS05161 2222/A EHP00744 EHP00745 npn 2222 transistor MMBT2222A SMBT2222A SMBT2907A MARKING s1P

    Untitled

    Abstract: No abstract text available
    Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161


    Original     		PDF SMBT2222A/ MMBT2222A SMBT2907A VPS05161

    br 2222 npn

    Abstract: SMBT2222A SMBT2907A
    Text: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT2222A SMBT2907A VPS05161 2222/A EHP00744 EHP00745 May-29-2001 br 2222 npn SMBT2222A SMBT2907A

    npn 2222 transistor

    Abstract: s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056
    Text: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT2222A SMBT2907A VPS05161 2222/A EHP00744 EHP00745 Jul-11-2001 npn 2222 transistor s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056

    CHT2222AGP

    Abstract: transistor s1p
    Text: CHENMKO ENTERPRISE CO.,LTD CHT2222AGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.


    Original     		PDF CHT2222AGP OT-23 OT-23) 600mA) CHT2222AGP transistor s1p

    CHT2222APT

    Abstract: transistor s1p
    Text: CHENMKO ENTERPRISE CO.,LTD CHT2222APT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.


    Original     		PDF CHT2222APT OT-23 OT-23) 600mA) 200ns CHT2222APT transistor s1p

    transistor s1p

    Abstract: CHT4401PT SOT23 timer ic S1p MARKING
    Text: CHENMKO ENTERPRISE CO.,LTD CHT4401PT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SOT-23 * Low voltage Max.=40V . * High saturation current capability.


    Original     		PDF CHT4401PT OT-23 600mA) 200ns transistor s1p CHT4401PT SOT23 timer ic S1p MARKING

    TRANSISTOR N3

    Abstract: transistor P17 FET TRANSISTOR N2
    Text: On-Chip Peripheral Components 7 On-Chip Peripheral Components This chapter gives detailed information about all on-chip peripherals of the SAB 80 C 515 except for the integrated interrupt controller, which is described separately in chapter 8. Sections 7.1 and


    Original     		PDF

    NB SOT-23 NPN

    Abstract: ch3904 CHT44 transistor marking s1a transistor s1p marking 1P sot-23 T05 sot-23 transistor marking t05 transistor C4G sot-23 39 MARKING SOT223
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector to Emitter Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Power Gain Outline Collector to


    Original     		PDF CH3904T CHT2222T 2SC4097 CH3904W CHT05 CHT42 CHTA42L CHT44 2SC2411K 2SC2412K NB SOT-23 NPN ch3904 CHT44 transistor marking s1a transistor s1p marking 1P sot-23 T05 sot-23 transistor marking t05 transistor C4G sot-23 39 MARKING SOT223

    4AC17

    Abstract: 4AC16 3AC13 5AE12 3AA11 3AC12 4AA11 4AA12 4AC15 4AC24
    Text: noHm Power Transistor Arrays Five 12 pin, Four 10 pin and three 8 pin T 0 -2 2 0 power transistors are packed in a single package. Suitable for motor drive and printer dot drive. PSIP8Pin VcEO V Equivalent circuits -6 ☆3AA13 -8 0 -4 *3 A C 1 1 © ffi


    OCR Scan     		PDF O-22C) 3AA11 T3AA12 V3AA13 r3AC11 3AC12 3AC13 4AA11 25pcs PSIP10 4AC17 4AC16 3AC13 5AE12 3AA11 3AC12 4AA11 4AA12 4AC15 4AC24

    702 TRANSISTOR npn

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ BFR106 UBB773 transistor t 2180 IC 1496 function L7E transistor 22741 transistor s1p 8115, transistor
    Text: m b b s a T a i □ d e s 2 d d 2 3 T « a p x P hilips S e m i c o n d u c t o r s _P ro d u c ^ p e c ific a tio n - N AnER PHILIPS/DISCRETE b?E D NPN 5 GHz wideband transistor ^ BFR106 PINNING


    OCR Scan     		PDF bbS3T31 BFR106 702 TRANSISTOR npn RF NPN POWER TRANSISTOR C 10-12 GHZ BFR106 UBB773 transistor t 2180 IC 1496 function L7E transistor 22741 transistor s1p 8115, transistor

    si9955

    Abstract: No abstract text available
    Text: SÌ9976DY Vishay Siliconix N-Channel Half-Bridge Driver FEATURES APPLICATIONS • • • • • • • • • • • • • • Single Input for High-Side and Low-Side MOSFETs 20- to 40-V Supply Static dc Operation Cross-Conduction Protected Undervoltage Lockout


    OCR Scan     		PDF 9976DY Si9976DY S-60752-Rev. 05-Apr-99 si9955