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    TRANSISTOR S250 Search Results

    TRANSISTOR S250 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S250 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tiris

    Abstract: tiris rfid transistor s2000 texas instruments transistor manual S2510 tiris s2000 tiris trm manual magnetic transmitter 134.2 TIRIS s2510 tiris antenna
    Text: S2510 READER INTRODUCTION Introduction March 1998 March 1998 Introduction Contents 1. General .5 1.1 About this Manual .5


    Original     		PDF S2510 tiris tiris rfid transistor s2000 texas instruments transistor manual tiris s2000 tiris trm manual magnetic transmitter 134.2 TIRIS s2510 tiris antenna

    Untitled

    Abstract: No abstract text available
    Text: QM48T/S25050 Preliminary Data Sheet 36-75 Vdc Input, 25 A, 5.0 Vdc Output TM The QmaX Series of high current single output DC/DC converters from di/dt sets new standards for thermal performance and power density in the quarter brick package. TM The QM48T/S25050 converters of the QmaX Series provide thermal performance in high temperature environments


    Original     		PDF QM48T/S25050 QM48T/S25050 866-WOW-didt QM48x25050

    Untitled

    Abstract: No abstract text available
    Text: QM48T/S25050 DC-DC Converter Data Sheet 36-75 VDC Input; 5 VDC @ 25 A Quarter-Brick The QM Series of high current single output dc-dc converters sets new standards for thermal performance and power density in the quarter-brick package. The QM48T/S25050 converters of the QM Series provide


    Original     		PDF QM48T/S25050

    Untitled

    Abstract: No abstract text available
    Text: QM48T/S25050 Preliminary Data Sheet 36-75 Vdc Input, 25 A, 5.0 Vdc Output TM The QmaX Series of high current single output DC/DC converters from di/dt sets new standards for thermal performance and power density in the quarter brick package. TM The QM48T/S25050 converters of the QmaX Series provide thermal performance in high temperature environments


    Original     		PDF QM48T/S25050 QM48T/S25050 866-WOW-didt QM48x25050

    TR-332

    Abstract: No abstract text available
    Text: QM48T/S25050 DC-DC Converter Data Sheet 36-75 VDC Input; 5 VDC @ 25 A Quarter-Brick The QM Series of high current single output dc-dc converters sets new standards for thermal performance and power density in the quarter-brick package. The QM48T/S25050 converters of the QM Series provide


    Original     		PDF QM48T/S25050 TR-332

    Untitled

    Abstract: No abstract text available
    Text: QM48T/S25050 DC-DC Converter Data Sheet 36-75 VDC Input; 5 VDC @ 25 A Quarter-Brick The QM Series of high current single output dc-dc converters sets new standards for thermal performance and power density in the quarter-brick package. The QM48T/S25050 converters of the QM Series provide


    Original     		PDF QM48T/S25050

    BFQ28

    Abstract: Q62702-F527 CJCO D 843 Transistor
    Text: 5SE D fl23Sfc.GS aüG4hlt, 7 SIEG T- ?t^/ST BFQ28 Low Noise NPN Silicon Microwave Transistor up to 4 GHz SIEMENS AKTIENGESELLSCHAF BFQ 2 8 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods


    OCR Scan     		PDF fl23Sfc Q62702-F527 BFQ28 Q62702-F527 CJCO D 843 Transistor

    P3H7

    Abstract: Transistor BFR 98 Transistor BFR 96 Transistor BFr 99 BFR14 BFR14B F-05 Q62702-F494 microwave transistor siemens cs10ma
    Text: asc » • fl23Sb05 OOOHbS? T ■SIEfi/ T-if-tJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high


    OCR Scan     		PDF fl235b05 desi548 U4661 BFR14B /cS10mA 200MHz P3H7 Transistor BFR 98 Transistor BFR 96 Transistor BFr 99 BFR14 BFR14B F-05 Q62702-F494 microwave transistor siemens cs10ma

    ABE 422

    Abstract: Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721
    Text: asc » • S23SbOS QOOHbS? T H S I E G { NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high


    OCR Scan     		PDF pac54 23Sb05 BFR14B ABE 422 Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721

    AF4505

    Abstract: transistor BF 502 Q U 31U transistor s250
    Text: ESC D • 023SbOS ÛQQ45GS T BISIEG ; 7^-5/' 2 / NPN Silicon RF Transistor SIEMENS BF502 A K T I E N G E S E L L S C H A F >4505 0 - | BF 5 0 2 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 D I N 4 1 86 8 .


    OCR Scan     		PDF 023SbOS QQ45GS BF502 AF4505 transistor BF 502 Q U 31U transistor s250

    zo 107 NA P 611

    Abstract: TRANSISTOR 2SC 2026 642p 2sc 643
    Text: 2SC D m fl23Sb05 QQQ4b43 T « S I E G — *- — — •» «* w n u u Low Noise NPN Silicon Microwave Transistor UJ? t 0 2 G H z ~ ?<5r. n^643 _ BFQ 60 D '7 ^ '3 l ~ £ 3 _ SIEMENS A K T IE NGES EL LS CH AF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal


    OCR Scan     		PDF fl23Sb05 QQQ4b43 Q62702-F655 023SbQS BFQ60 zo 107 NA P 611 TRANSISTOR 2SC 2026 642p 2sc 643

    acrian RF POWER TRANSISTOR

    Abstract: acrian RF POWER TRANSISTOR 300 w TRANSISTOR S250 S250-50 acrian ic S250-50-2 S250-50-3 S25-50 le200 acrian inc
    Text: 0182998 ACRIAN INC 97D 01153 D -33-15 DE •dlfla'na 00 01153 7 GENERAL DESCRIPTION The S250-50 is a 50V 250 W PEP NPN silicon RF power transistor designed for 1.5 to 30 MHz linear applications. Gold metallization and difussed resistors assure optimum reliability and ruggedness.


    OCR Scan     		PDF S250-50 S250-50-3 Icq-100 acrian RF POWER TRANSISTOR acrian RF POWER TRANSISTOR 300 w TRANSISTOR S250 acrian ic S250-50-2 S250-50-3 S25-50 le200 acrian inc

    Untitled

    Abstract: No abstract text available
    Text: HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE ¡^25021!Y V MULTI OPTOCOUPLER SERIES *4 FEATURES_ DESCRIPTION_ • HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN • HIGH CURRENT TRANSFER RATIO CTR: 2000% TYP P S2502-1, -2, -4 and PS2502L-1, -2, -4 are optically coupled


    OCR Scan     		PDF S2502-1, PS2502L-1, PS2502-1, PS2502L-1 PS2502L-2 10ieH PS2502L-4

    Untitled

    Abstract: No abstract text available
    Text: HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE £s2502L1V V MULTI PHOTOCOUPLER SERIES DESCRIPTION_ FEATURES_ • P S 2 5 0 2 -1 , -2, -4 and P S 2 5 0 2 L -1 , -2, -4 are optically coupled HIGH ISOLATION VO LTAG E


    OCR Scan     		PDF s2502L1V PS2502L-1 PS2502L-2 PS2502L-4 b427525

    S2506

    Abstract: PS2506
    Text: HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES PS2506-1, -2, -4 PS2506L-1, -2, -4 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN PS2506-1, -2 and -4 and PS2506L-1, -2 and -4 are optically coupled isolators containing a GaAs light emitting diode and


    OCR Scan     		PDF PS2506-1, PS2506L-1, PS25061, PS2506L-2 PS2506L-4 S2506 PS2506

    S2508

    Abstract: No abstract text available
    Text: 5/UjyNPNJ:e5'*5;? l/7ls-*Bh5y5sZ5> SILICON NPN o EPITAXIAL PLANAR TRANSISTOR U H P-L ^ 9 o U H P - ^ L Ban d Low N o i e e A m p l i f i e r t» X in m INDUSTRIAL APPLICATIONS Applications, Unit i n o High Speed Switching Applications. i r N F=2.0dB S tl f = 5 0 0 MHz)


    OCR Scan     		PDF

    Q62702-F494

    Abstract: Al203-Keramik Transistor BFR 14 F494 BFR14B S250
    Text: N P N -S iliz iu m -P la n a r-M ik ro w e lle n -T ra n s is to r BFR 14 B Vorläufige Daten B F R 14 B ist ein epitaktischer N P N -Silizium -Planar-M ikrow ellentransistor. Der Transistor eignet sich durch seine kleine Rauschzahl, hohe Verstärkung und geringe Verzerrung für


    OCR Scan     		PDF BFR14B Q62702-F494 Q62702-F494 Al203-Keramik Transistor BFR 14 F494 S250

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET PHOTO COUPLERS PS2503 -1, - 2 , -3, -4 P S2503L-1, -2, >3, -4 NEC ELECTRON DEVICE HIGH ISOLATION VOLTAGE MULTI PHOTO COUPLER SERIES D E S C R IP T IO N PS2503-1, -2, -3, -4 and PS2503L-1, -2, -3,-4 series are optically coupled isolator containing a G a A s light emitting diode and


    OCR Scan     		PDF PS2503 S2503L-1, PS2503-1, PS2503L-1,

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


    OCR Scan     		PDF

    LF847

    Abstract: Seven Transistor Array PNP l5 transistor PNP N5 npn transistor CS2500 CS3200 lf-621 LF853 CS4000 transistor PNP L5
    Text: -RRY SEMI CONDUCT OR CORP 57E J -Db7S5b 3 D QE2 1 A - " r - m 037 -s i Chapter 1 - Getting Started With your circuit simulations and worst case analysis done, you are ready to begin the layout phase of your


    OCR Scan     		PDF 3Q0E21A 20b7SSb LF625 LF626 50b755b GD0221b LF627 LF847 Seven Transistor Array PNP l5 transistor PNP N5 npn transistor CS2500 CS3200 lf-621 LF853 CS4000 transistor PNP L5

    transistor s250

    Abstract: photo diode motion sensor Photo Gap Detector
    Text: SILICON SENSOR S INC 75 DE 1 0253^52 8253922 SILICON ¿ENSQRS INC TTJ□ □ 11 si SILICON SENSORS, INC. Highway 18 East Dodgeville, Wisconsin 53533 Telephone: 608 935-2707 0000374 7ëc 00374 5 D optical switch SSOS-800 SSOS-700 SSQS-700 SS0S-800 TECHNICAL BULLETIN


    OCR Scan     		PDF SSOS-700 SSOS-800 SSQS-700 SS0S-800 SSQS-700 transistor s250 photo diode motion sensor Photo Gap Detector

    nec ps2505

    Abstract: NEC photocoupler
    Text: DATA SHEET NEC PHOTOCOUPLER PS2505-1 ,-2,-4, PS2505L-1 ,-2,-4 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE MULTI PHOTOCOUPLER SERIES -NEPOC Series DESCRIPTION The PS2505-1, -2, -4 and PS2505L-1, -2, -4 are optically coupled isolators containing GaAs light emitting diodes


    OCR Scan     		PDF PS2505-1 PS2505L-1 PS2505-1, PS2505L-1, S2505L-1, PS2505L-1-E3, PS2505L-2-E3, nec ps2505 NEC photocoupler

    SGS250DA013D

    Abstract: SGS250DA sgs250D
    Text: 3DE D Mi T^Sa? QQ30 b ci5 3 • £ ÿ j SCS-THOMSON 0œ iIUI^IïMD ^ ''T * 3 '5 » 3 5 " SGS250D A013D S G S-THOMSON NPN DARLINGTON POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION (2500V RMS ■ LOW Rih JUNCTION TO CASE ■ FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING


    OCR Scan     		PDF SGS250D A013D O-240) PC-029« SGS250DA013D SGS250DA