Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9013M TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B 1.2x1.2×0.5 unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to S9012M
|
Original
|
WBFBP-03B
S9013M
WBFBP-03B
500mA)
S9012M
150mW
500mA
500mA
30MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9012M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to S9013M Excellent hFE linearity 1. BASE
|
Original
|
WBFBP-03B
S9012M
WBFBP-03B
S9013M
150mW
-50mA
-500mA,
|
PDF
|
2t1 transistor
Abstract: S9012M S9013M
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9012M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to S9013M Excellent hFE linearity 1. BASE
|
Original
|
WBFBP-03B
S9012M
WBFBP-03B
S9013M
150mW
2t1 transistor
S9012M
S9013M
|
PDF
|
S9012M
Abstract: S9013M
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9013M TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B 1.2x1.2×0.5 unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to S9012M
|
Original
|
WBFBP-03B
S9013M
WBFBP-03B
500mA)
S9012M
150mW
S9012M
S9013M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9012M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to S9013M Excellent hFE linearity 1. BASE
|
Original
|
WBFBP-03B
S9012M
WBFBP-03B
S9013M
150mW
|
PDF
|
transistor s9012
Abstract: S9012 H14-4 S9012 to-92 S9012 TO92 S9012 data sheet S9013 S9013 to-92 s9013 transistor transistor TO-92 S9013
Text: S9012 PNP EPITAXIAL SILICON TRANSISTOR General Purpose Application TO-92 Collector Current Ic=-500mA Collector Power Dissipation Pc=625mW Complementary to S9013 Ta=25oC ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Value Unit Collector-Base Voltage VCBO
|
Original
|
S9012
-500mA
625mW
S9013
-50mA
-500mA
-50mA
transistor s9012
S9012
H14-4
S9012 to-92
S9012 TO92
S9012 data sheet
S9013
S9013 to-92
s9013 transistor
transistor TO-92 S9013
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9013W TRANSISTOR NPN SOT–323 FEATURES High Collector Current Excellent HFE Linearity MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
|
Original
|
OT-323
S9013W
500mA,
30MHz
|
PDF
|
s9013
Abstract: S9013LT1
Text: S9013LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 Complement to S9012LT1 Collector Current: Ic= 500mA High Total Power Dissipation: Pc=225Mw ABSOLUTE MAXIMUM RATINGS at Ta=25℃
|
Original
|
S9013LT1
OT-23
S9012LT1
500mA
225Mw
500mA
062in
300uS
s9013
S9013LT1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: S9012LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Complement to S9013LT1 Package:SOT-23 Collector Current :Ic= -500mA High Total Power Dissipation :Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃
|
Original
|
S9012LT1
S9013LT1
OT-23
-500mA
225mW
-50mA
-500mA
|
PDF
|
s9013 transistor
Abstract: transistor S9013 S9013 transistor TO-92 S9013 S9013 TO92 data sheet transistor s9013 S9012
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR
|
Original
|
S9013
S9012
500mA
500mA,
30MHz
S9013
s9013 transistor
transistor S9013
transistor TO-92 S9013
S9013 TO92
data sheet transistor s9013
S9012
|
PDF
|
transistor s9012
Abstract: S9012 S9012 equivalent Transistor S9013 S9013 S9012 to-92
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors S9012 TO-92 TRANSISTOR PNP FEATURES Complementary to S9013 z Excellent hFE linearity 1. EMITTER z 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
S9012
S9013
-500mA
-500mA,
-50mA
-20mA
30MHz
transistor s9012
S9012
S9012 equivalent
Transistor S9013
S9013
S9012 to-92
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS Ta=25℃ unless otherwise noted 3. COLLECTOR
|
Original
|
S9013
S9012
500mA
500mA,
30MHz
|
PDF
|
S9013
Abstract: S9013 TO92
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR
|
Original
|
S9013
S9012
500mA
500mA,
30MHz
S9013
S9013 TO92
|
PDF
|
transistor s9012
Abstract: S9012 2T1 SOT-23 s9012 2T1 SOT-23 S9012 equivalent 2t1 transistor S9012 SOT-23 S9012 data sheet transistor SOT23 2t1 Transistor S9013
Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= -500mA) z Complementary To S9013. z Excellent HFE Linearity. S9012 Pb Lead-free APPLICATIONS z High Collector Current. SOT-23 ORDERING INFORMATION
|
Original
|
-500mA
S9012
S9013.
OT-23
BL/SSSTC081
transistor s9012
S9012 2T1 SOT-23
s9012
2T1 SOT-23
S9012 equivalent
2t1 transistor
S9012 SOT-23
S9012 data sheet
transistor SOT23 2t1
Transistor S9013
|
PDF
|
|
transistor s9012
Abstract: S9012 s9012 transistor S9012 equivalent S9012 SOT-23 S9013 SOT-23 S9013 S9012 2T1 S9012 2T1 SOT-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9012 TRANSISTOR PNP FEATURES z Complementary to S9013 z Excellent hFE linearity 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
OT-23
OT-23
S9012
S9013
-50mA
-500mA,
-20mA
transistor s9012
S9012
s9012 transistor
S9012 equivalent
S9012 SOT-23
S9013 SOT-23
S9013
S9012 2T1
S9012 2T1 SOT-23
|
PDF
|
S9013 J3
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
OT-23
OT-23
S9013
S9012
500mA
500mA,
30MHz
S9013 J3
|
PDF
|
transistor s9012
Abstract: S9012
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD T TO-92 Plastic-Encapsulate Transistors S9012 TO-92 TRANSISTOR PNP FEATURES Complementary to S9013 z Excellent hFE linearity 1. EMITTER z 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
|
Original
|
S9012
S9013
transistor s9012
S9012
|
PDF
|
s9013 transistor
Abstract: J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
OT-23
OT-23
S9013
S9012
500mA
500mA,
30MHz
s9013 transistor
J3 s9013
S9013 SOT-23
transistor S9013
S9013
data sheet transistor s9013
MARKING J3 SOT-23
S9012
J3 SOT23
marking J3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9012 TRANSISTOR PNP FEATURES z Complementary to S9013 z Excellent hFE linearity 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
OT-23
OT-23
S9012
S9013
-50mA
-500mA,
-20mA
|
PDF
|
S9013 SOT-23
Abstract: J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23
Text: S9013 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units
|
Original
|
S9013
OT-23
OT-23
S9012
500mA
500mA,
30MHz
S9013 SOT-23
J3 s9013
transistor SOT23 J3
S9013 J3
s9013 transistor
transistor S9013
s9013
s9013 transistor SOT23 J3
marking J3
MARKING J3 SOT-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (Ta=25 ℃unless otherwise noted)
|
Original
|
OT-23
OT-23
S9013
S9012
500mA
500mA,
30MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: S9013S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. _ TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AM PLIFIER * Complement to S9012S * Collector C urrent: Ic=500mA * High Total Power Dissipation : pD=225mW ABSOLUTE MAXIMUM RATINGS a t Tamb=25*C
|
OCR Scan
|
S9013S
S9012S
500mA
225mW
100uA
500mA
062in
|
PDF
|
S9012S
Abstract: No abstract text available
Text: FORWARD INTERNATIONAL ELECTRONICS LID. S9012S SEMICONDUCTOR _ TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Packaj^: SOT-23 * Complement to S9013S * Collector Current: Ic=-500mA * High Total Power D issipation: pD=225mW ABSOLUTE MAXIMUM RATINGS at Tan*=25*C
|
OCR Scan
|
S9012S
OT-23
S9013S
-500mA
225mW
-100uA
-50mA
-500mA
S9012S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: | FORWARD INTERNATIONAL ELECTRONICS LID. S9013 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. Package: TO-92 * Complement to S9012 * Collector Current: Ic=500mA * High Total Power Dissipation: ptH>25mW
|
OCR Scan
|
S9013
S9012
500mA
100uA
500mA
|
PDF
|