IRF CANAL P
Abstract: melcher LM 1000 mk II melcher LM 3000 MANUEL Melcher Melcher bm 3000 melcher bM 1000 mk II fonda 4 calcul de circuit snubber melcher bM 1000 cours electrotechnique
Text: Classes de produits Melcher définies suivant l'environnement Classe de produits pour environnement sévère Rugged Environment Performance Parfaitement adaptée lorsque l’équipement est soumis à des contraintes sévères en effets électromagnetiques,
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I-20159
IRF CANAL P
melcher LM 1000 mk II
melcher LM 3000 MANUEL
Melcher
Melcher bm 3000
melcher bM 1000 mk II
fonda 4
calcul de circuit snubber
melcher bM 1000
cours electrotechnique
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melcher LM 3000 MANUEL
Abstract: melcher LM 1000 mk II Tableau caracteristique des transistors hacheur melcher LM 2000 MANUEL smr 40000 c melcher S-1000 melcher psr 57 melcher bM 1000 mk II diode de protection contre les surtension
Text: Classes de produits Melcher définies suivant l'environnement Classe de produits pour environnement sévère Rugged Environment Performance Parfaitement adaptée lorsque l’équipement est soumis à des contraintes sévères en effets électromagnetiques,
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I-20159
melcher LM 3000 MANUEL
melcher LM 1000 mk II
Tableau caracteristique des transistors
hacheur
melcher LM 2000 MANUEL
smr 40000 c
melcher S-1000
melcher psr 57
melcher bM 1000 mk II
diode de protection contre les surtension
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TRANSISTOR 2n65s
Abstract: 2N65S 2N498 2N657 transistor 2N656 ad 303 transistor 2N856 2N497 2N656 transistor afr 22
Text: ➤ ✌ ✍✚ —. ‘“”-”” — MIL-s-19500/74E 17 Wtober l’dLi7 SUPSRSED2NT MIL-S-19500/74D 20 March 1964 See 6.3 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, MEDIUM- POWER, TYPES 2N497, 2N498, 2N656, AND 2N657 This specification
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MIL-s-19500/74E
MIL-S-19500/74D
2N497,
2N498,
2N656,
2N657
2N656
TRANSISTOR 2n65s
2N65S
2N498
2N657
transistor 2N656
ad 303 transistor
2N856
2N497
2N656
transistor afr 22
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Features • Capable of 0.625Watts of Power Dissipation. Collector-current 1.0A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1
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M28S-B
M28S-C
M28S-D
625Watts
-55OC
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O7703
Abstract: ic sj 2036 2N1489 2N1490 oc142 2N148B b961 2N1487 2N1488 Transistor 1967
Text: M IL -S -19500/208B Ü4 A ugust 1967 SUPERSEDING M IL -S - 19500/208A EL 23 O cto b e r 1964 (See 6. 2) M ILITARY SPECIFICA TION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, H IGH-POW ER TY PES 2N1487, 2N1488, 2N1489, AND 2N1490 T h is s p e c ific a tio n is m an d ato ry fo r u se by a ll D e p a rt
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MIL-S-19500/208B
19500/208A
2N1487,
2N1488,
2N1489,
2N1490
2N1487
2N1489
2N1488
O7703
ic sj 2036
2N1490
oc142
2N148B
b961
Transistor 1967
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Untitled
Abstract: No abstract text available
Text: NPN Photo Transistor TPS615 A pplications • Disk Drive • VCR • Position Detector and Home Electronic Equipment • Optical Switch Features • 03.1mm Epoxy Resin Package • Light Current: lL= 20pA Min. at E = 0.1 mW I cm2 • Half Value Angle: GVi = ± 30° (Typ.)
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TPS615
98-4LEDS
lLi57
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M3002M
Abstract: M3006M transistor 3005 2 L 3005 TRANSISTOR transistor 3005 transistor 3006 3003 BR TRANSISTOR transistor m 3003 g 3006M in 3003 TRANSISTOR
Text: MOTOROLA SC Í X S T R S / R 6367254 FJ "Tb MOTOROLA SC j>F|t,3L,7ES4 00üE35ti S 96D CXSTRS/R F 82356 _ 7" - ¿ - D 33 MM3001 thru MM3003 CASE 79-02, STYLE 1 TO-39 TO-205AD) M A X IM U M RATINGS Sym bol R a tin g C o lle c to r-E m itte r V o lta g e
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E35ti
MM3001
MM3003
O-205AD)
M3002M
M3006M
transistor 3005 2
L 3005 TRANSISTOR
transistor 3005
transistor 3006
3003 BR TRANSISTOR
transistor m 3003 g
3006M
in 3003 TRANSISTOR
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609 transistor
Abstract: KSP62 KSP63 KSP64 S-05
Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP62/63/64 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: V CEs = KSP62: 20V KSP63/64: 30V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Rating Unit K SP62
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KSP62/63/64
KSP62:
KSP63/64:
625mW
KSP62
KSP63/64
100/iA,
00251fc3
609 transistor
KSP62
KSP63
KSP64
S-05
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KST5401
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR KST5401 HIGH VOLTAGE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation S torage Tem perature
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KST5401
OT-23
-100nA,
-10nA,
-100V,
KST5401
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pnp high emitter base voltage 15 volt
Abstract: KSA1220 KSA1142 KSA1220A KSC2682 KSC2690 KSC2690A
Text: SAMSUNG S E M I C O N D U C T O R . INC KSA1142 14E D | ?Tfc,m 42 00074^4 T PNP EPITAXIAL SILICON TRANSISTOR T ~ AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQUENCY POWER AMPLIFIER 1 3 - / 7 • Complement to KSC2682 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic
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KSA1142
KSC2682
-180v,
KSA1220/1220A
pnp high emitter base voltage 15 volt
KSA1220
KSA1220A
KSC2682
KSC2690
KSC2690A
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GT15J101
Abstract: 2-16C1C T15J101
Text: TOSHIBA GT15J101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 1 5 J 1 01 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS 3.210.2 15.9MAX MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.35/¿s Max. Low Saturation Voltage :
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GT15J101
T15J101
2-16C1C
GT15J101
2-16C1C
T15J101
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR KST4403 SWITCHING TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation Storage Tem perature
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KST4403
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catalogue des transistors bipolaires de puissance
Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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electromatic s system sv 115 230
Abstract: mgdm 6 A ELECTROMATIC mgdm 6 A ELECTROMATIC MGDM 6a electromatic s system st 125 115 electromatic s system sv 110 electromatic RELAY SM 115 220 electromatic denmark electromatic s system electromatic s system sm 105 220
Text: SENSORS INDUCTIVE - CAPACITIVE - LEVEL - PHOTO - TEMPERATURE ETC. Inductive iösclncrmolk Proximity sensors Capacitive This new catalogue on accessories together with a new Ssystem catalogue replace our eight previous S-system catalo gues. This innovation should facilitate your survey of our entire
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3866S
Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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MG50Q2YS40
Abstract: VQE 12 61jl
Text: TOSHIBA MG50Q2YS40 MG50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • 4 -FAST-ON-TAB # 1 1 0 2 - 0 5 .6 1 0 . 3 High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5/^s (Max.)
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MG50Q2YS40
2-94D1A
MG50Q2YS40
VQE 12
61jl
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2085A
Abstract: 25C312
Text: TPS615 TOSHIBA TOSHIBA PHOTO TRANSISTOR FLOPPY DISK DRIVE SILICON NPN EPITAXIAL PLANAR TPS61 5 VCR POSITION DETECTOR OF HOME ELECTRIC EQUIPMENT STROBOSCOPE OPTO-ELECTRONIC SWITCH • • • . mm epoxy resin package Light current : I l = 20/*A MIN. at E = 0.1mW / cm2
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TPS615
TPS61
TLN119
2085A
25C312
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Untitled
Abstract: No abstract text available
Text: TPS615 TOSHIBA TOSHIBA PHOTO TRANSISTOR FLOPPY DISK DRIVE SILICON NPN EPITAXIAL PLANAR TPS615 VCR POSITION DETECTOR OF HOME ELECTRIC EQUIPMENT STROBOSCOPE OPTO-ELECTRONIC SWITCH • • • 953.1mm epoxy resin package Light current : Il = 20^A MIN. at E = 0.1mW/cm2
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TPS615
TLN119
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MN3005
Abstract: No abstract text available
Text: GT15J102 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR f 'W i • T ■ iM r vm ■m SILICON N-CHANNEL IGBT w ? Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 10 + 0.3 Collector Current Collector Power Dissipation Tc = 25°C
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GT15J102
2-10R1C
MN3005
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG300Q1US51 TO SH IBA GTR M O D U L E M G 3 SILICON N C H A N N EL IGBT Q 1 U S 5 1 HIGH POW ER SW ITCHING APPLICATIONS M O T O R CONTRO L APPLICATIONS • • H igh Input Impedance H ig h sp eed : tf= 0 .3 /Æ Max. Inductive Load Low Saturation Voltage
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MG300Q1US51
1256C
VCE25i
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG100Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 00Q2YS50 HIGH POWER SWITCHING APPLICATIONS U nit in mm M O TOR CONTROL APPLICATIONS High Input Impedance High Speed : tf= O .Z /u s Max. ( Inductive Load Low Saturation Voltage : VCE (sat) =3.6V (Max.)
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MG100Q2YS50
00Q2YS50
TjS125Â
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Mß>;nn?Y^in Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/^s Max. (Max.) Low Saturation Voltage • S SI Cl 2 3 ± 0.5 2 3 ± 0.5
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MG50Q2YS40
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transistor IR 652 P
Abstract: No abstract text available
Text: TO SH IBA M G200Q2YS50 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT MG200Q2YS50 HIGH POW ER SW ITCHING APPLICATIONS M O T O R CONTRO L APPLICATIONS • • H igh Input Impedance H igh Speed : tf= 0.3/is M ax. @Inductive Load Low Saturation Voltage
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G200Q2YS50
MG200Q2YS50
961001EAA2
transistor IR 652 P
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG100Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 00Q2YS51 HIGH POWER SWITCHING APPLICATIONS M O TOR CONTROL APPLICATIONS High Input Impedance High Speed : tf= O .Z /u s Max. ( Inductive Load Low Saturation Voltage : VCE (sat) =3.6V (Max.)
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MG100Q2YS51
00Q2YS51
TjS125Â
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