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    TRANSISTOR SJE1497 Search Results

    TRANSISTOR SJE1497 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    SJE1497

    Abstract: Transistor SJE1497
    Text: ¿2&M0SPEC PNP PNP SILICON POWER TRANSISTORS SJE1497 SJE1497 transistor is designed for use in general purpose Power amplifier,verticai output application FEATURES: * Collector-Emitter Voltage v c e o = 150V Min * DC Current Gain hFE= 30(Min)@lc= 300mA 1.5 AMPERE


    OCR Scan     		PDF SJE1497 300mA 150oC 15CfC Transistor SJE1497