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    TRANSISTOR SL 100 Search Results

    TRANSISTOR SL 100 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SL 100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLV91

    Abstract: ferroxcube 1988 mda406 MDA401
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in


    Original     		PDF BLV91/SL OT-172D) BLV91 ferroxcube 1988 mda406 MDA401

    122d transistor

    Abstract: SL 100 NPN Transistor MDA309 122d SL 100 NPN Transistor base emitter collector
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU11/SL UHF power transistor Product specification July 1986 Philips Semiconductors Product specification UHF power transistor BLU11/SL DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in


    Original     		PDF BLU11/SL OT-122D) 122d transistor SL 100 NPN Transistor MDA309 122d SL 100 NPN Transistor base emitter collector

    MDA380

    Abstract: 4312 020 36642 MDA385 BLU99 TRANSISTOR SL 100 "2222 352"
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product specification March 1993 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in


    Original     		PDF BLU99 BLU99/SL BLU99 OT122A) BLU99/SL MDA380 4312 020 36642 MDA385 TRANSISTOR SL 100 "2222 352"

    SL 100 NPN Transistor

    Abstract: SL 100 NPN Transistor base emitter collector blv99 transistor sl 100
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV99/SL UHF power transistor Product specification September 1991 Philips Semiconductors Product specification UHF power transistor FEATURES BLV99/SL PIN CONFIGURATION • Emitter-ballasting resistors for an optimum temperature profile


    Original     		PDF BLV99/SL OT172D MSB007 MBB01 SL 100 NPN Transistor SL 100 NPN Transistor base emitter collector blv99 transistor sl 100

    SL-60101

    Abstract: No abstract text available
    Text: Preliminary Product Description SL-6010 The SL-6010 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-6010 SL-6010 SL-60101 SL-60102 SL-60102 SL60101 SL60102 EDS-100938

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SL-8010 The SL-8010 is Stanford Microdevices’ high-linearity 80W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 80W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-8010 SL-8010 SL-80101 SL-80102 SLD-80101 SLD-80102 SL80101 SL80102 EDS-100939

    3010 MOS

    Abstract: j177 equivalent transistor
    Text: Advance Data Sheet Product Description SL-3010 The SL-3010 is Stanford Microdevices’ high-linearity 30W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-3010 SL-3010 SL-30101 SL-30102 SL-30102 3010 MOS j177 equivalent transistor

    SL1010

    Abstract: SL-1010 J181 SL-10101 SL-10102
    Text: Advance Data Sheet Product Description SL-1010 The SL-1010 is Stanford Microdevices’ high-linearity 10W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-1010 SL-1010 SL-10102 SL-10101 SL1010 J181 SL-10101 SL-10102

    Untitled

    Abstract: No abstract text available
    Text: Advance Data Sheet Product Description SL-6010 The SL-6010 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-6010 SL-6010 SL-60101 SL-60102 SL-60102

    SL-8010

    Abstract: SLD-80101 SLD-80102
    Text: Advance Data Sheet Product Description SL-8010 The SL-8010 is Stanford Microdevices’ high-linearity 80W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 80W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-8010 SL-8010 SL-80102 SL-80101 SLD-80102 SLD-80101 SLD-80101 SLD-80102

    n-channel dual 3010

    Abstract: CISS 3010 SL-30101 SL-3010 SL-30102 SL3010 j177 equivalent transistor
    Text: Advance Data Sheet Product Description SL-3010 The SL-3010 is Stanford Microdevices’ high-linearity 30W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-3010 SL-3010 SL-30102 SL-30101 n-channel dual 3010 CISS 3010 SL-30101 SL-30102 SL3010 j177 equivalent transistor

    J027

    Abstract: No abstract text available
    Text: Advance Data Sheet Product Description SL-8010 The SL-8010 is Stanford Microdevices’ high-linearity 80W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 80W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-8010 SL-8010 SL-80101 SL-80102 SLD-80102 SLD-80101 J027

    SL-60101

    Abstract: SL-60102
    Text: Advance Data Sheet Product Description SL-6010 The SL-6010 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-6010 SL-6010 SL-60102 SL-60101 SL-60101 SL-60102

    SPP70N05L

    Abstract: Q67040-S4000-A2 sl diode
    Text: BUZ 100 SL Preliminary data SPP70N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 100 SL


    Original     		PDF SPP70N05L O-220 Q67040-S4000-A2 04/Nov/1997 SPP70N05L Q67040-S4000-A2 sl diode

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SL-6020 The SL-6020 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications up to 2000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-6020 SL-6020 SL-60201 SL-60202 SL-60201 SL-60202 SL60201 SL60202 EDS-100943

    s 452-2

    Abstract: No abstract text available
    Text: Preliminary Product Description SL-4522 The SL-4522 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-4522 SL-4522 SL-45221 SL-45222 SL45221 SL45222 EDS-100946 s 452-2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SL-4524 The SL-4524 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-4524 SL-4524 SL-45241 SL-45242 SL-45242 SL45241 SL45242 EDS-100948

    J464

    Abstract: SL-5020 j196 Transistor J182
    Text: Advance Data Sheet Product Description SL-5020 The SL-5020 is Stanford Microdevices’ high-linearity 50W PEP LDMOS transistor designed for base station applications up to 2000 MHz. Rated for minimum peak envelope power of 50W, it is ideal for CDMA Single or Multi-Carrier Power Amplifiers in


    Original     		PDF SL-5020 SL-5020 SL-50201 40otal SL-50202 J464 j196 Transistor J182

    j142

    Abstract: No abstract text available
    Text: Advance Data Sheet Product Description SL-4524 The SL-4524 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-4524 SL-4524 SL-45241 SL-45242 j142

    s 452-2

    Abstract: J406 dual 4522 TRANSISTOR J406 SL-45221 SL-45222
    Text: Advance Data Sheet Product Description SL-4522 The SL-4522 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-4522 SL-4522 SL-45222 SL-45221 s 452-2 J406 dual 4522 TRANSISTOR J406 SL-45221 SL-45222

    J205

    Abstract: SL 2360 SL-25242 J380 transistor j380 J377 SL-25241 2524
    Text: Advance Data Sheet Product Description SL-2524 The SL-2524 is Stanford Microdevices’ high-linearity 25W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-2524 SL-2524 SL-25242 SL-25241 J205 SL 2360 SL-25242 J380 transistor j380 J377 SL-25241 2524

    Untitled

    Abstract: No abstract text available
    Text: Advance Data Sheet Product Description SL-2522 The SL-2522 is Stanford Microdevices’ high-linearity 25W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-2522 SL-2522 SL-25221 SL-25222 SL-25222

    j497

    Abstract: No abstract text available
    Text: Advance Data Sheet Product Description SL-1020 The SL-1020 is Stanford Microdevices’ high-linearity 10W LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-1020 SL-1020 SLD-10201 SLD-10202 SiDVB56l j497

    POWER 28V 3A 60W

    Abstract: SL-6020 SL-60201 SL-60202 J351
    Text: Advance Data Sheet Product Description SL-6020 The SL-6020 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications up to 2000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-6020 SL-6020 SL-60202 SL-60201 POWER 28V 3A 60W SL-60201 SL-60202 J351