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    TRANSISTOR SMD 338 Search Results

    TRANSISTOR SMD 338 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD 338 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PBSS4130PANP 30 V, 1 A NPN/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


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    PDF PBSS4130PANP DFN2020-6 OT1118) PBSS4130PAN. PBSS5130PAP. AEC-Q101

    TRANSISTOR SMD MARKING CODE 2P

    Abstract: DFN2020 transistor marking codes 2P transistor footprint
    Text: PBSS5260PAP 60 V, 2 A PNP/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


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    PDF PBSS5260PAP DFN2020-6 OT1118) PBSS4260PANP. PBSS4260PAN. AEC-Q101 TRANSISTOR SMD MARKING CODE 2P DFN2020 transistor marking codes 2P transistor footprint

    smd transistor marking 2J

    Abstract: No abstract text available
    Text: PBSS4230PANP 30 V, 2 A NPN/PNP low VCEsat BISS transistor 14 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


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    PDF PBSS4230PANP DFN2020-6 OT1118) PBSS4230PAN. PBSS5230PAP. AEC-Q101 smd transistor marking 2J

    NPN TRANSISTOR SMD MARKING CODE B2

    Abstract: DFN2020-6
    Text: PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat BISS transistor 14 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


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    PDF PBSS4230PAN DFN2020-6 OT1118) PBSS4230PANP. PBSS5230PAP. AEC-Q101 NPN TRANSISTOR SMD MARKING CODE B2 DFN2020-6

    marking code 2Q

    Abstract: No abstract text available
    Text: PBSS4260PANP 60 V, 2 A NPN/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


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    PDF PBSS4260PANP DFN2020-6 OT1118) PBSS4260PAN. PBSS5260PAP. AEC-Q101 marking code 2Q

    SMD TRANSISTOR MARKING 2e

    Abstract: 2e SMD PNP TRANSISTOR
    Text: PBSS5130PAP 30 V, 1 A PNP/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


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    PDF PBSS5130PAP DFN2020-6 OT1118) PBSS4130PANP. PBSS4130PAN. AEC-Q101 SMD TRANSISTOR MARKING 2e 2e SMD PNP TRANSISTOR

    npn transistor footprint

    Abstract: No abstract text available
    Text: PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


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    PDF PBSS4260PAN DFN2020-6 OT1118) PBSS4260PANP. PBSS5260PAP. AEC-Q101 npn transistor footprint

    TRANSISTOR SMD MARKING CODE 2s

    Abstract: TRANSISTOR SMD MARKING CODE QR PBSS5112PAP transistor 103
    Text: PBSS5112PAP 120 V, 1 A PNP/PNP low VCEsat BISS transistor 30 November 2012 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


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    PDF PBSS5112PAP DFN2020-6 OT1118) PBSS4112PANP. PBSS4112PAN. AEC-Q101 TRANSISTOR SMD MARKING CODE 2s TRANSISTOR SMD MARKING CODE QR PBSS5112PAP transistor 103

    marking code 2R

    Abstract: No abstract text available
    Text: PBSS4112PAN 120 V, 1 A NPN/NPN low VCEsat BISS transistor 29 November 2012 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


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    PDF PBSS4112PAN DFN2020-6 OT1118) PBSS4112PANP. PBSS5112PAP. AEC-Q101 marking code 2R

    MARKING SMD PNP TRANSISTOR 2t

    Abstract: No abstract text available
    Text: PBSS4112PANP 120 V, 1 A NPN/PNP low VCEsat BISS transistor 29 November 2012 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


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    PDF PBSS4112PANP DFN2020-6 OT1118) PBSS4112PAN. PBSS5112PAP. AEC-Q101 MARKING SMD PNP TRANSISTOR 2t

    smd transistor marking A5

    Abstract: SC74 marking 345 transistor smd code marking 431 PBSS4160DS PBSS5160DS
    Text: PBSS5160DS 60 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 28 June 2005 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.


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    PDF PBSS5160DS OT457 SC-74) PBSS4160DS. smd transistor marking A5 SC74 marking 345 transistor smd code marking 431 PBSS4160DS PBSS5160DS

    431.K

    Abstract: transistor smd code marking 431 transistor smd marking 431 transistor smd code marking 420 transistor smd marking 431.k 431 SMD CODE MARKING TRANSISTOR SMD MARKING CODE SP PBSS4160DS PBSS5160DS SC74 marking 345
    Text: PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat BISS transistor Rev. 02 — 27 June 2005 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.


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    PDF PBSS4160DS OT457 SC-74) PBSS5160DS. PBSS4160DS 431.K transistor smd code marking 431 transistor smd marking 431 transistor smd code marking 420 transistor smd marking 431.k 431 SMD CODE MARKING TRANSISTOR SMD MARKING CODE SP PBSS5160DS SC74 marking 345

    Untitled

    Abstract: No abstract text available
    Text: DF N2 020 -6 PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat BISS transistor 23 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


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    PDF PBSS5160PAP DFN2020-6 OT1118) PBSS4160PANP. PBSS4160PAN. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N2 020 -6 PBSS5230PAP 30 V, 2 A PNP/PNP low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


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    PDF PBSS5230PAP DFN2020-6 OT1118) PBSS4230PANP. PBSS4230PAN. AEC-Q101

    smd transistor marking A5

    Abstract: PBSS4160DS PBSS5160DS
    Text: PBSS5160DS 60 V, 1 A PNP/PNP low VCEsat BISS transistor Rev. 03 — 9 October 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.


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    PDF PBSS5160DS OT457 SC-74) PBSS4160DS. PBSS5160DS smd transistor marking A5 PBSS4160DS

    Untitled

    Abstract: No abstract text available
    Text: DF N2 020 -6 PBSS4160PANP 60 V, 1 A NPN/PNP low VCEsat BISS transistor 14 January 2013 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


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    PDF PBSS4160PANP DFN2020-6 OT1118) PBSS4160PAN. PBSS5160PAP. AEC-Q101

    pbss4160dpn

    Abstract: transistor smd marking 431.k
    Text: PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat BISS transistor Rev. 02 — 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.


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    PDF PBSS4160DPN OT457 SC-74) PBSS4160DPN transistor smd marking 431.k

    Untitled

    Abstract: No abstract text available
    Text: PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.


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    PDF PBSS4160DPN OT457 SC-74) PBSS4160DPN

    PBSS4160DPN

    Abstract: transistor smd marking 431.k MOSFET TRANSISTOR SMD MARKING CODE B4
    Text: PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.


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    PDF PBSS4160DPN OT457 SC-74) PBSS4160DPN transistor smd marking 431.k MOSFET TRANSISTOR SMD MARKING CODE B4

    Untitled

    Abstract: No abstract text available
    Text: DF N2 020 -6 PBSS4130PAN 30 V, 1 A NPN/NPN low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


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    PDF PBSS4130PAN DFN2020-6 OT1118) PBSS4130PANP. PBSS5130PAP. AEC-Q101

    transistor smd marking 431.k

    Abstract: transistor smd code marking 420 transistor smd code marking 431 MARKING SMD PNP TRANSISTOR B8 transistor smd marking 431 SMD TRANSISTOR MARKING B8 TRANSISTOR SMD MARKING CODE 278 PBSS4160DS PBSS5160DS SC74 marking 345
    Text: PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat BISS transistor Rev. 03 — 9 February 2006 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.


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    PDF PBSS4160DS OT457 SC-74) PBSS5160DS. PBSS4160DS transistor smd marking 431.k transistor smd code marking 420 transistor smd code marking 431 MARKING SMD PNP TRANSISTOR B8 transistor smd marking 431 SMD TRANSISTOR MARKING B8 TRANSISTOR SMD MARKING CODE 278 PBSS5160DS SC74 marking 345

    Untitled

    Abstract: No abstract text available
    Text: DF N2 020 -6 PBSS4160PAN 60 V, 1 A NPN/NPN low VCEsat BISS transistor 14 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


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    PDF PBSS4160PAN DFN2020-6 OT1118) PBSS4160PANP. PBSS5160PAP. AEC-Q101

    smd TRANSISTOR code marking 7k sot23

    Abstract: PBRP113ET PBRN113ET
    Text: PBRP113ET PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 1 kΩ Rev. 01 — 17 December 2007 Product data sheet 1. Product profile 1.1 General description 800 mA PNP low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic


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    PDF PBRP113ET O-236AB) PBRN113ET. PBRP113ET smd TRANSISTOR code marking 7k sot23 PBRN113ET

    PBRP113ZT

    Abstract: PBRN113ZT
    Text: PBRP113ZT PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 16 January 2008 Product data sheet 1. Product profile 1.1 General description 800 mA PNP low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic


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    PDF PBRP113ZT O-236AB) PBRN113ZT. PBRP113ZT PBRN113ZT