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    TRANSISTOR SMD EE Search Results

    TRANSISTOR SMD EE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD EE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    OST-9N15

    Abstract: color sensitive PHOTO TRANSISTOR OST9N15 transistor d 1303
    Text: OST-9N15 PHOTO TRANSISTOR • General Description The OST-9N15 is high sensitivity NPN silicon photo-transistor mounted in a SMD plastic package. ■ Features ˙Compact ˙Wide angular response ˙Low cost ˙Meet RoHS ■ Applications ˙Optical counters ˙Optical detectors


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    PDF OST-9N15 OST-9N15 100uA 72hrs. 24hrs) 45min 30min) color sensitive PHOTO TRANSISTOR OST9N15 transistor d 1303

    marking s20 SMD Transistor

    Abstract: sot883c SMD IC MARKING GP BFU730LX AN11224 Germanium power
    Text: 62 7  & BFU730LX NPN wideband silicon germanium RF transistor Rev. 1 — 8 May 2013 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.


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    PDF BFU730LX OT883C JESD625-A marking s20 SMD Transistor sot883c SMD IC MARKING GP BFU730LX AN11224 Germanium power

    SMD TRANSISTOR MARKING 2.x

    Abstract: 2STM2360 210EH
    Text: 2STM2360 Low voltage fast-switching PNP power transistor Target specification Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Leadless, small and thin SMD plastic package with excellent thermal behaviour


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    PDF 2STM2360 M2360 SMD TRANSISTOR MARKING 2.x 2STM2360 210EH

    smd optocoupler

    Abstract: TCMT1020 TCMT1021 TCMT1024 TCMT1022 TCMT1023 tcmt1020 temic tcmt1024 temic
    Text: TCMT1020 Series TELEFUNKEN Semiconductors SMD Optocoupler with Phototransistor Output Description The TCMT1020 Series consist of a gallium arsenid infrared emitting diode, optically coupled to a silicon NPN epitaxial planar transistor in a 8 lead SOIC package.


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    PDF TCMT1020 D-74025 smd optocoupler TCMT1021 TCMT1024 TCMT1022 TCMT1023 tcmt1020 temic tcmt1024 temic

    datasheet ic 4060

    Abstract: ic 4060 transistor SMD ee ic 4060 datasheets EE 102 kst03
    Text: Photo Transistor KST-0315A Features Unit : mm Dimensions Compact and thin package SMD type Reflow soldering Lead-free & High reliability package 2-way mount : top view / side view Applications Collector Emitter Touch screen for ATM Touch screen for Car navigation system


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    PDF KST-0315A datasheet ic 4060 ic 4060 transistor SMD ee ic 4060 datasheets EE 102 kst03

    BFS17

    Abstract: BFS17R BFS17W BFS17 E1
    Text: BFS17/BFS17R/BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280


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    PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99 BFS17 E1

    BFS17

    Abstract: bfs17 Vishay BFS17R BFS17W 702 TRANSISTOR sot-23 85038
    Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2


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    PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W 20-Jan-99 D-74025 bfs17 Vishay 702 TRANSISTOR sot-23 85038

    Untitled

    Abstract: No abstract text available
    Text: TCNT2000 www.vishay.com Vishay Semiconductors Reflective Optical Sensor with Transistor Output A E FEATURES • Package type: SMD • Detector type: phototransistor • Dimensions L x W x H in mm : 3.4 x 2.7 x 1.5 • Operating range within > 20 % relative collector


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    PDF TCNT2000 TCNT2000 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    "marking E1"

    Abstract: BFS17 BFS17R BFS17W
    Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2


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    PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99 "marking E1"

    Untitled

    Abstract: No abstract text available
    Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2


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    PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99

    TCNT2000

    Abstract: Reflective Optical Sensor
    Text: TCNT2000 www.vishay.com Vishay Semiconductors Reflective Optical Sensor with Transistor Output A E FEATURES • Package type: SMD • Detector type: phototransistor • Dimensions L x W x H in mm : 3.4 x 2.7 x 1.5 • Operating range within > 20 % relative collector


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    PDF TCNT2000 TCNT2000 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Reflective Optical Sensor

    702 TRANSISTOR smd SOT23

    Abstract: 70.2 marking smd npn Transistor 704 TRANSISTOR smd SOT23 smd transistor marking j5 transistor smd 661 752 SMD IC marking 632 smd marking 271 Sot transistor SOT23 J5 smd transistor 718
    Text: BFS17 / BFS17R / BFS17W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • SMD package 2 3 1 Applications SOT-23 For broadband amplifiers up to 1 GHz. Mechanical Data Typ: BFS17 Case: SOT-23 Plastic case


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    PDF BFS17 BFS17R BFS17W OT-23 OT-23 BFS17W 702 TRANSISTOR smd SOT23 70.2 marking smd npn Transistor 704 TRANSISTOR smd SOT23 smd transistor marking j5 transistor smd 661 752 SMD IC marking 632 smd marking 271 Sot transistor SOT23 J5 smd transistor 718

    70.2 marking smd npn Transistor

    Abstract: SMD IC marking 632 702 TRANSISTOR smd SOT23 smd transistor marking j5 70.2 TRANSISTOR smd smd transistor 718 transistor marking 702 application sot-23 MARKING 636 transistor smd 661 752 704 TRANSISTOR smd SOT23
    Text: BFS17 / BFS17R / BFS17W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • SMD package 2 3 1 Applications SOT-23 For broadband amplifiers up to 1 GHz. Mechanical Data Typ: BFS17 Case: SOT-23 Plastic case


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    PDF BFS17 BFS17R BFS17W OT-23 OT-23 BFS17W 70.2 marking smd npn Transistor SMD IC marking 632 702 TRANSISTOR smd SOT23 smd transistor marking j5 70.2 TRANSISTOR smd smd transistor 718 transistor marking 702 application sot-23 MARKING 636 transistor smd 661 752 704 TRANSISTOR smd SOT23

    70.2 marking smd npn Transistor

    Abstract: transistor smd 661 752 702 TRANSISTOR smd SOT23 smd transistor marking j5 smd marking 271 Sot 704 TRANSISTOR smd SOT23 SMD IC marking 632 SOT23 marking 828 SOT MARKING 213 transistor smd marking NA sot-23
    Text: BFS17 / BFS17R / BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • High power gain SMD package e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 3 1 SOT-23 Applications


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    PDF BFS17 BFS17R BFS17W 2002/95/EC 2002/96/EC OT-23 OT-323 OT-23 70.2 marking smd npn Transistor transistor smd 661 752 702 TRANSISTOR smd SOT23 smd transistor marking j5 smd marking 271 Sot 704 TRANSISTOR smd SOT23 SMD IC marking 632 SOT23 marking 828 SOT MARKING 213 transistor smd marking NA sot-23

    70.2 marking smd npn Transistor

    Abstract: smd marking 271 Sot SMD IC marking 632 transistor smd 661 752 704 TRANSISTOR smd SOT23 702 TRANSISTOR smd SOT23 BFS17 BFS17R BFS17W transistor smd marking NA sot-23
    Text: BFS17 / BFS17R / BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • High power gain SMD package e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 3 1 SOT-23 Applications


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    PDF BFS17 BFS17R BFS17W OT-23 2002/95/EC 2002/96/EC OT-323 BFS17 OT-23 70.2 marking smd npn Transistor smd marking 271 Sot SMD IC marking 632 transistor smd 661 752 704 TRANSISTOR smd SOT23 702 TRANSISTOR smd SOT23 BFS17W transistor smd marking NA sot-23

    BFS17

    Abstract: transistor BFs 18 BFS17R marking E1
    Text: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter


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    PDF BFS17 BFS17R D-74025 transistor BFs 18 marking E1

    "marking E1"

    Abstract: BFS17 BFS17R sot 23 transistor 70.2
    Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4


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    PDF BFS17/BFS17R BFS17 BFS17R D-74025 17-Apr-96 "marking E1" sot 23 transistor 70.2

    IS9-2100ARH-8

    Abstract: 26clv32 5962F9954701VYC 5962F9568902VXC 5962R9666501VEC ld smd transistor 5962F9954701VXC 5962R9575101VRC 5962F9674202V9A 5962F9666302VXC
    Text: Military/Space 17 2008 P RODUCT S ELECTION GUIDE Military ICs pg. 17-2 Defense IC Test Flows (pg. 17-6) Defense ICs (pg. 17-2) MIL-PRF-38535 Class Q (pg. 17-6) Auxiliary Output (pg. 17-2) Comparators (pg. 17-4) EEPROM (pg. 17-2) Micro + Peripherals (pg. 17-4)


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    PDF MIL-PRF-38535 RS-232) IS9-1845ASRH-8 5962F0150901QXC IS9-1845ASRH-Q 5962F0150901VXC IS9-2100ARH-8 5962F9953602QXC IS9-2100ARH-Q 5962F9953602VXC IS9-2100ARH-8 26clv32 5962F9954701VYC 5962F9568902VXC 5962R9666501VEC ld smd transistor 5962F9954701VXC 5962R9575101VRC 5962F9674202V9A 5962F9666302VXC

    5962F9568902VXC

    Abstract: HS0-4080ARH-Q is9 1825asrh-q 5962F0052301VYC CD40106BKMSR 0546r 5962F9954701VXC 5962F0150901VXC HS 3282 CD4063
    Text: Space/Defense 17 2009 P RODUCT S ELECTION GUIDE Defense ICs pg. 17-2 Defense IC Test Flows (pg. 17-6) Defense ICs (pg. 17-2) MIL-PRF-38535 Class Q (pg. 17-6) Auxiliary Output (pg. 17-2) Comparators (pg. 17-4) EEPROM (pg. 17-2) Micro + Peripherals (pg. 17-4)


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    PDF MIL-PRF-38535 RS-232) IS9-1845ASRH-8 5962F0150901QXC IS9-1845ASRH-Q 5962F0150901VXC IS9-2100ARH-8 5962F9953602QXC IS9-2100ARH-Q 5962F9953602VXC 5962F9568902VXC HS0-4080ARH-Q is9 1825asrh-q 5962F0052301VYC CD40106BKMSR 0546r 5962F9954701VXC 5962F0150901VXC HS 3282 CD4063

    Untitled

    Abstract: No abstract text available
    Text: • t.tS3^31 DDEbOOb fifl3 N AUER PHILIPS/DISCRETE APX PZT3906 b?E ]> J V. SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a microminiature SMD envelope SOT-223 . Designed primarily fo r high-speed, saturated switching applications in industrial service.


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    PDF PZT3906 OT-223)

    ML 1557 b transistor

    Abstract: No abstract text available
    Text: T e m ic BFS17/BFS17R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package l R E1— 1


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    PDF BFS17/BFS17R BFS17 BFS17R Vattk25 D-74025 16-Oct-97 ML 1557 b transistor

    transistor T 523

    Abstract: TRANSISTOR 3000W 400V SMD transistor 26 sot 23 npn 400V switching transistor sot-23 high gain PNP POWER TRANSISTOR "SOT23" Lighting Controllers SMD TRANSISTOR HP TRANSISTOR SMD HP 89 smc diodes motorola Transistors SOT89 smd
    Text: SMD DATA BOOK 2001-2002 Ultra Low Leakage Diodes in SOT-23. Central is introducing a family of Energy Efficient Devices, EED's, for the segment of the electronics market that demands both small size and very low leakage currents, typically 100pA. Applications include laptops, cell


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    PDF OT-23. 100pA. CMPD6001 CMPD6001A CMPD6001C CMPD6001S OT-23 3SMC170CA OT-26 transistor T 523 TRANSISTOR 3000W 400V SMD transistor 26 sot 23 npn 400V switching transistor sot-23 high gain PNP POWER TRANSISTOR "SOT23" Lighting Controllers SMD TRANSISTOR HP TRANSISTOR SMD HP 89 smc diodes motorola Transistors SOT89 smd

    transistor smd ba rn

    Abstract: smd ya transistor ferroxcube 4322 Variable capacitor
    Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BLV2048 UHF push-pull power transistor 1998 Apr 07 Preliminary specification Supersedes data of 1997 Oct 14 File under Discrete Semiconductors, SC19a Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors


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    PDF BLV2048 SC19a OT494A 125108/00/02/pp16 transistor smd ba rn smd ya transistor ferroxcube 4322 Variable capacitor