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    TRANSISTOR SMD MARKING CODE NV Search Results

    TRANSISTOR SMD MARKING CODE NV Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD MARKING CODE NV Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    st smd IC marking code

    Abstract: 2N5154ESYHRT
    Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 3 1 • Hi-Rel NPN bipolar transistor • Linear gain characteristics


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    2N5154HR O-257 2N5154HR O-257 DocID15387 st smd IC marking code 2N5154ESYHRT PDF

    520301006R

    Abstract: 2N5154RESYHRG
    Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor • Linear gain characteristics


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    2N5154HR O-257 2N5154HR O-257 DocID15387 520301006R 2N5154RESYHRG PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics


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    2N5153HR O-257 2N5153HR O-257 DocID15386 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics


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    2N5153HR O-257 2N5153HR O-257 DocID15386 PDF

    STMicroelectronics smd marking code

    Abstract: smd transistor marking A2 TRANSISTOR SMD MARKING CODE A1 smd transistor marking B3 transistor smd marking 94 TRANSISTOR SMD MARKING CODES marking code 51 SMD Transistor st smd IC marking code NPN TRANSISTOR SMD MARKING CODE B2 TRANSISTOR SMD MARKING CODE d2
    Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 2 TO-39 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified


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    2N5154HR O-257 2N5154HR O-257 STMicroelectronics smd marking code smd transistor marking A2 TRANSISTOR SMD MARKING CODE A1 smd transistor marking B3 transistor smd marking 94 TRANSISTOR SMD MARKING CODES marking code 51 SMD Transistor st smd IC marking code NPN TRANSISTOR SMD MARKING CODE B2 TRANSISTOR SMD MARKING CODE d2 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet − production data Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 2 TO-39 3 1 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics


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    2N5154HR O-257 2N5154HR O-257 PDF

    marking code 51 SMD Transistor

    Abstract: STMicroelectronics smd marking code st smd IC marking code smd transistor marking A2 smd transistor marking B3 SMD TRANSISTOR MARKING code TC NPN TRANSISTOR SMD MARKING CODE B2 TRANSISTOR SMD MARKING CODE A1 smd marking code stmicroelectronics ic smd 851
    Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet − production data Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 2 TO-39 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics


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    2N5154HR O-257 2N5154HR O-257 marking code 51 SMD Transistor STMicroelectronics smd marking code st smd IC marking code smd transistor marking A2 smd transistor marking B3 SMD TRANSISTOR MARKING code TC NPN TRANSISTOR SMD MARKING CODE B2 TRANSISTOR SMD MARKING CODE A1 smd marking code stmicroelectronics ic smd 851 PDF

    MARKING CODE SMD IC sot23-5

    Abstract: TRANSISTOR SMD MARKING CODE 703 marking SA sot23-5 transistor marking SA sot23-5 SA MARKING CODE SOT23-5 smd transistor marking sot25 MARKING CODE S.A IC sot23-5 transistor smd marking CS 703 TRANSISTOR smd SMD sot25 marking by
    Text: INTEGRATED CIRCUITS SA57001-XX Microminiature, low power consumption, low dropout regulator Product data Supersedes data of 2001 Aug 01 Philips Semiconductors 2003 Mar 20 Philips Semiconductors Product data Microminiature, low power consumption, low dropout regulator


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    SA57001-XX SA57001-XX SA5700 11-Nov-02) MARKING CODE SMD IC sot23-5 TRANSISTOR SMD MARKING CODE 703 marking SA sot23-5 transistor marking SA sot23-5 SA MARKING CODE SOT23-5 smd transistor marking sot25 MARKING CODE S.A IC sot23-5 transistor smd marking CS 703 TRANSISTOR smd SMD sot25 marking by PDF

    JANSR2N5401UB

    Abstract: 2N5401UB06 J2N5401UB1
    Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate


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    2N5401HR 2N5401HR MIL-PRF19500 DocID16934 JANSR2N5401UB 2N5401UB06 J2N5401UB1 PDF

    ESCC 5207 005

    Abstract: 2N3810HR 2N3810HRG
    Text: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet - production data Features 21 3 4 56 BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor


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    2N3810HR 2N3810HR DocID15385 ESCC 5207 005 2N3810HRG PDF

    TRANSISTOR SMD MARKING CODE 1 KW

    Abstract: No abstract text available
    Text: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V, 0.03 A Datasheet - production data Features 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor LCC-6 TO-77


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    2N2920AHR 2N2920AHR DocID15383 TRANSISTOR SMD MARKING CODE 1 KW PDF

    MARKING CODE SMD IC 531

    Abstract: TRANSISTOR SMD MARKING CODE 1 KW
    Text: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V, 0.03 A Datasheet - production data Features 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor LCC-6 TO-77


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    2N2920AHR 2N2920AHR DocID15383 MARKING CODE SMD IC 531 TRANSISTOR SMD MARKING CODE 1 KW PDF

    ujt 2646

    Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
    Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!


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    D-81541 14-077S Q62702-D1353 Q62702-G172 Q62702-G173 ujt 2646 TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2484HR Hi-Rel NPN bipolar transistor 60 V, 50 mA Datasheet - production data Features 1 Parameter Value BVCEO 60 V IC max 50 mA hFE at 10 V - 150 mA > 250 Operating temperature range - 65 °C to + 200 °C 2 3 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics


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    2N2484HR 2N2484HR DocID17734 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 LCC-3UB Pin 4 in LCC-3UB is connected to the metallic lid Figure 1. Internal schematic diagram • Hermetic packages


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    2N3700HR 2N3700HR DocID15354 PDF

    AD8212AL

    Abstract: No abstract text available
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED 12-02-08 C. SAFFLE Add device type 02 tested at low dose rate. Make changes to paragraphs 1.2.2, 1.5, 4.4.1c, 4.4.4.1, Table I and figure 1. - ro A REV SHEET REV A A A A SHEET 15 16 17 18 REV STATUS REV A


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    PDF

    marking code RAD SMD Transistor npn

    Abstract: JS55
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate


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    2N5551HR 2N5551HR MIL-PRF19500 DocID16935 marking code RAD SMD Transistor npn JS55 PDF

    RAD SMD MARKING CODE

    Abstract: 2N5551RUB
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 • Hermetic packages • ESCC and JANS qualified • Up to 100 krad(Si) low dose rate UB Description


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    2N5551HR 2N5551HR MIL-PRF19500 DocID16935 RAD SMD MARKING CODE 2N5551RUB PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate


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    2N5401HR 2N5401HR MIL-PRF19500 DocID16934 PDF

    st 54003

    Abstract: TRANSISTOR AO SMD MARKING J-STD-020B PD54003L-E
    Text: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection


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    PD54003L-E 2002/95/EC PD54003L-E st 54003 TRANSISTOR AO SMD MARKING J-STD-020B PDF

    Untitled

    Abstract: No abstract text available
    Text: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection


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    PD54003L-E 2002/95/EC PD54003L-E PDF

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan
    LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60 PDF

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


    OCR Scan
    Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28 PDF

    transistor AY PNP smd

    Abstract: marking code RAD SMD Transistor npn ph TRANSISTOR SMD MARKING CODE A65 smd transistor smd transistor JE MARKING SMD pnp TRANSISTOR ec smd transistor NG TRANSISTOR SMD MARKING CODE ad smd transistor GY smd transistor code SG
    Text: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1998 Nov 11 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES PINNING • Power dissipation comparable to SOT23


    OCR Scan
    PDTA114EEF MAM413 115002/00/02/pp8 transistor AY PNP smd marking code RAD SMD Transistor npn ph TRANSISTOR SMD MARKING CODE A65 smd transistor smd transistor JE MARKING SMD pnp TRANSISTOR ec smd transistor NG TRANSISTOR SMD MARKING CODE ad smd transistor GY smd transistor code SG PDF