TRANSISTOR SMD MARKING CODE WMM Search Results

TRANSISTOR SMD MARKING CODE WMM Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR SMD MARKING CODE WMM Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
led 7 segment anode TIL 702 Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150 Text: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9	OCR Scan	10x10 led 7 segment anode TIL 702 trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150	PDF
CBSE 10 CLASS Abstract: CBSE 12 CLASS cbse class 12 TRANSISTOR SMD MARKING CODE 1l 4SM4 Text: REVISIONS DATE Y R -M O -M DESCRIPTION LTR APPROVED 9 2 - 01-1 3 Change footnotes in conditions for standby current drain tests. Footnote 1, table I, change input voltage limits. Add case outline U. REV SHEET REV SHEET REV STATUS OF SHEETS REV 10 SHEET	OCR Scan	5962-E1724 MIL-BUL-103. MIL-BUL-103 CBSE 10 CLASS CBSE 12 CLASS cbse class 12 TRANSISTOR SMD MARKING CODE 1l 4SM4	PDF
TELEVISION EHT TRANSFORMERS Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31 Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes	OCR Scan	LCD01 TELEVISION EHT TRANSFORMERS BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31	PDF
HD46505 Abstract: VOGT 406 69 hd46821 vogt transformer 406 69 vogt transformer 406 77 HD46850 hd46505s vogt transformer 406 06 020 HD63484 HD468B21 Text: • ■ ■ fmSÊM i b b h h h i 8/16-BIT PERIPHERAL LSI DATA BOOK H IT A C H I MEDICAL APPLICATIONS H itachi’s products are not authorized for use in M E D IC A L A P P L IC A T IO N S , including, but not lim ited to, use in life support devices without the	OCR Scan	8/16-BIT HD146818 HD46505 VOGT 406 69 hd46821 vogt transformer 406 69 vogt transformer 406 77 HD46850 hd46505s vogt transformer 406 06 020 HD63484 HD468B21	PDF
TRANSISTOR 5101 FG Abstract: j 13007-2 WM7 SMD transistor marking code MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR TRANSISTOR SMD MARKING CODE s01 smd transistor bq SAA 1025 AHL touch 1015G ELAP cm 76 Text: NEC USER’S MANUAL J0.PD75518 4 BIT SINGLE-CHIP MICROCOMPUTER HPD75517 X P D 7 5 5 1 8 \|iPD75P518 Document No. IEU-1305E (O. D. No. IEU-743E Date Published January 1995 P Printed in Japan F£C Corporation 1990 •I b427SSS 0D^S3EH 174 ■ Cautions on CM OS D evices	OCR Scan	uPD75518 HPD75517 iPD75P518 IEU-1305E IEU-743E) b427SSS on-154 PD75518 b427525 00R57Q7 TRANSISTOR 5101 FG j 13007-2 WM7 SMD transistor marking code MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR TRANSISTOR SMD MARKING CODE s01 smd transistor bq SAA 1025 AHL touch 1015G ELAP cm 76	PDF