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    TRANSISTOR SOT 23 FS 35 Search Results

    TRANSISTOR SOT 23 FS 35 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SOT 23 FS 35 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1037 SOT-23 TRANSISTOR PNP 3 FEATURES ∙ Excellent hFE linearity. ∙ Complments the 2SC2412 1 1. BASE 2 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    OT-23 2SA1037 OT-23 2SC2412 PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort JFET Transistor MMBF5484LT1 N−Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc IG(f) 10 mAdc 200 2.8 mW mW/°C °C 1 Drain−Gate Voltage Reverse Gate−Source Voltage Forward Gate Current


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    MMBF5484LT1 236AB) PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N−Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage VGS 30 Vdc IG 10


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    MMBF4416LT1 236AB) PDF

    npn tr array

    Abstract: Seven Transistor Array PNP CA3046 pnp array ICL8038 function generator pnp 8 transistor array ultra low noise NPN transistor "PNP Transistor array" video genlock pll soic 8 transistor array high frequency PAL 007 a MOSFET
    Text: Other Analog 6 HIGH PERFORMANCE ANALOG PRODUCT TREES ANALOG Selection Guides Video Video Genlock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-2 Video Sync Separator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    CA3161 1-888-INTERSIL npn tr array Seven Transistor Array PNP CA3046 pnp array ICL8038 function generator pnp 8 transistor array ultra low noise NPN transistor "PNP Transistor array" video genlock pll soic 8 transistor array high frequency PAL 007 a MOSFET PDF

    JFET TRANSISTOR REPLACEMENT GUIDE j201

    Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
    Text: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone


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    U3750BM U3760MB-FN U3760MB-SD SSO-44 SD-40 U3800BM U3810BM U4030B U4030B JFET TRANSISTOR REPLACEMENT GUIDE j201 UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band PDF

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
    Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station


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    SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor PDF

    MMBF5484LT1

    Abstract: TO-236A
    Text: ON Semiconductort JFET Transistor MMBF5484LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc IG(f) 10 mAdc 200 2.8 mW mW/°C °C 1 Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current


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    MMBF5484LT1 236AB) r14525 MMBF5484LT1/D MMBF5484LT1 TO-236A PDF

    MMBF4416LT1

    Abstract: No abstract text available
    Text: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10


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    MMBF4416LT1 236AB) r14525 MMBF4416LT1/D MMBF4416LT1 PDF

    MGSF1N03LT1

    Abstract: MGSF1N03LT3 DIODE CMS MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR . TECHNICAL o .c.RE.EN. Order this document by MGSFlN03LT1/D DATA . LINETM Low rDS on Small-Signal MOSFETS TMOS Single N-Channel Field Effect Transistors I I I ( Pati of the GreenLineTM Portfolio of devices with energy–


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    MGSFlN03LT1/D OkV41 2W29296 MGSF1N03LT1 MGSF1N03LT3 DIODE CMS MOTOROLA PDF

    motorola JFET 2N3819

    Abstract: BF245 application note BC237 transistor TO-92 bc108 N CHANNEL JFET 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N–Channel — Depletion J112 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 35 Vdc Gate – Source Voltage VGS – 35 Vdc Gate Current IG 50 mAdc


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    226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 motorola JFET 2N3819 BF245 application note BC237 transistor TO-92 bc108 N CHANNEL JFET 2N3819 PDF

    transistor J111

    Abstract: transistor J112 MARKING RK J113 SOT-23 marking M6 140 j112 m6 marking j-fet BSR58LT1
    Text: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C


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    BSR58LT1 OT-23 transistor J111 transistor J112 MARKING RK J113 SOT-23 marking M6 140 j112 m6 marking j-fet PDF

    BSR58LT1

    Abstract: No abstract text available
    Text: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS 2 SOURCE Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current IG 50


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    BSR58LT1 BSR58LT1/D BSR58LT1 PDF

    application note jfet J111 transistor

    Abstract: BSR58LT1G M6 BSR58LT1G BSR58LT1 J111 J112 J113 m6 marking transistor sot-23 transistor J111 marking j112
    Text: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating 2 SOURCE Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current


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    BSR58LT1 BSR58LT1/D application note jfet J111 transistor BSR58LT1G M6 BSR58LT1G BSR58LT1 J111 J112 J113 m6 marking transistor sot-23 transistor J111 marking j112 PDF

    Diode Gfg 6f

    Abstract: MMBF5484LT1
    Text: MOTOROLA Order this document by MMBF5484LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current


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    MMBF5484LT1/D MMBF5484LT1 MMBF5484LT1/D* Diode Gfg 6f MMBF5484LT1 PDF

    MMBF5484LT1

    Abstract: No abstract text available
    Text: ON Semiconductort JFET Transistor MMBF5484LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Drain–Gate Voltage Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below


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    MMBF5484LT1 236AB) r14525 MMBF5484LT1/D MMBF5484LT1 PDF

    application note jfet J111 transistor

    Abstract: jfet J111 transistor transistor J111 BSR58LT1 transistor j113 j113 equivalent J111 J112 J113 CODE m6
    Text: BSR58LT1 JFET Chopper Transistor N–Channel – Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Gate Voltage VDG –40 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C


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    BSR58LT1 r14525 BSR58LT1/D application note jfet J111 transistor jfet J111 transistor transistor J111 BSR58LT1 transistor j113 j113 equivalent J111 J112 J113 CODE m6 PDF

    MMBF4416LT1

    Abstract: ON932 ON732 marking gfg 6f
    Text: MOTOROLA Order this document by MMBF4416LT1/D SEMICONDUCTOR TECHNICAL DATA JFET MMBF4416LT1 VHF/UHF Amplifier Transistor N–Channel Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDS


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    MMBF4416LT1/D MMBF4416LT1 236AB) MMBF4416LT1/D* MMBF4416LT1 ON932 ON732 marking gfg 6f PDF

    MMBF5484

    Abstract: MMBF5484LT1 MMBF5484LT1G NOR 000 001 170 007
    Text: MMBF5484LT1 Preferred Device JFET Transistor N−Channel Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating 2 SOURCE Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below


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    MMBF5484LT1 MMBF5484LT1/D MMBF5484 MMBF5484LT1 MMBF5484LT1G NOR 000 001 170 007 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBF4416LT1 Preferred Device JFET VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage


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    MMBF4416LT1 MMBF4416LT1/D PDF

    MMBF4416LT1

    Abstract: MMBF4416LT1G FR 220
    Text: MMBF4416LT1 Preferred Device JFET VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage


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    MMBF4416LT1 OT-23 O-236) MMBF4416LT1/D MMBF4416LT1 MMBF4416LT1G FR 220 PDF

    WE VQE 23 F

    Abstract: BFS17AA WE VQE 11 E WE VQE 24 E BFS17 BFS17A TRANSISTOR BSP 149 TRANSISTOR A22 transistor marking A21
    Text: N AMER P H I L I P S / D I S C R E T E ESE D • 1^ 5 3 = 1 3 1 0013145 b B FS 17A T -3 M 7 N-P-N 1 GHz WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope. It is intended fo r a wide range o f v.h.f. and u.h.f. applications in thick and thin-film circuits.


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    BFS17A OT-23 BFS17A BFS17 bb53t31 500MHz; WE VQE 23 F BFS17AA WE VQE 11 E WE VQE 24 E TRANSISTOR BSP 149 TRANSISTOR A22 transistor marking A21 PDF

    TRANSISTOR BC 707

    Abstract: CFK40 transistor bf 274 BF 273 transistor
    Text: TELEFUNKEN ELECTRONIC SIC II • 8'IBOO‘ib 0Q05M13 = v -s z -a s - TitLKFtUlMKiMl electronic CFK40 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications; Gain controlled amplifiers up to 2 GHz in common Gate 1 configuration; in wireless telephone, broadcast sets, cabel TV and equipments with


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    0Q05M13 CFK40 569-GS TRANSISTOR BC 707 CFK40 transistor bf 274 BF 273 transistor PDF

    BF509S

    Abstract: transistor BF 509 BF509 marking code 3h transistor creative 6.1 6 T 3H sot-23 TRANSISTOR MARKING 76 marking U12
    Text: TELEFUNKEN ELECTRONIC filC D WÊ fi^EOO^b 000521^ T • ALG6 7~' 3 t - n BF 509 S ITimiPtMl&GItM electronic Creative Technologies Silicon PNP RF Transistor Applications! Gain controlled VHF Input stages Features: • High power gain • Low noise figure High reverse attenuation


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    7-31-tl ft-11 569-GS 000s154 hal66 if-11 BF509S transistor BF 509 BF509 marking code 3h transistor creative 6.1 6 T 3H sot-23 TRANSISTOR MARKING 76 marking U12 PDF

    Untitled

    Abstract: No abstract text available
    Text: T -3 1 -17 NPN Silicon RF Transistor 35E D • ' BF554 flS3b350 00Ib737 fl 1 S I P _ SIEMENS/ SPCLi SEMICONDS • General RF small-signal applications up to 300 MHz, amplifier, mixer and oscillator in circuits Type Marking Ordering code for versions In bulk


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    BF554 flS3b350 00Ib737 Q62702-F551 Q62702-F1042 fl23b es-10 PDF