Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4617 NPN SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR 3 3 FEATURES 2 1 SOT-23 * Low Cob Cob=2.0pF typ * Complements the UTC 2SA1774 3 3 1 SOT-523 2 1 SOT-723 ORDERING INFORMATION Ordering Number Lead Free Halogen Free
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2SC4617
OT-23
2SA1774
OT-323
O-236)
OT-523
OT-723
2SC4617L-x-AE3-R
2SC4617G-x-AE3-R
2SC4617L-x-AL3-R
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Untitled
Abstract: No abstract text available
Text: NST3946DP6T5G Dual Complementary General Purpose Transistor The NST3946DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963
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NST3946DP6T5G
NST3946DP6T5G
23/SOTâ
323/SOTâ
NST3946DP6/D
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Untitled
Abstract: No abstract text available
Text: NST847BPDP6T5G Dual Complementary General Purpose Transistor The NST847BPDP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963
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NST847BPDP6T5G
NST847BPDP6T5G
23/SOTâ
323/SOTâ
NST847BPDP6T5G*
NST847BPDP6/D
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BSP16T1
Abstract: SMD310 marking Bt2
Text: MOTOROLA Order this document by BSP16T1/D SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3
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BSP16T1/D
BSP16T1
OT-223
BSP16T1/D*
BSP16T1
SMD310
marking Bt2
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SRC1204
Abstract: SUR524H
Text: SUR524H Epitaxial planar NPN silicon transistor Description • Dual chip digital transistor Features • Two SRC1204 chips in SOT-353 package • Simplify circuit design • Reduce a quantity of parts and manufacturing process Package : SOT-353 Ordering Information
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SUR524H
SRC1204
OT-353
OT-353
KSD-R5R009-001
SUR524H
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Untitled
Abstract: No abstract text available
Text: MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT−23/SOT−323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6
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MBT3946DW1T1G,
SMBT3946DW1T1G
MBT3946DW1T1G
23/SOTâ
MBT3946DW1T1/D
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ma marking sot-363
Abstract: No abstract text available
Text: MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT−23/SOT−323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6
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MBT3946DW1T1G,
SMBT3946DW1T1G
MBT3946DW1T1G
OT-23/SOT-323
OT-363-6
AEC-Q101
MBT3946DW1T1/D
ma marking sot-363
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistor LMBT3904DW1T1G The LMBT3904DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363
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LMBT3904DW1T1G
LMBT3904DW1T1
23/SOTâ
OT-363
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistor LMBT3906DW1T1G 6 The LMBT3906DW1T1 device isa spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363
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LMBT3906DW1T1G
LMBT3906DW1T1
23/SOTâ
OT-363
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318M
Abstract: LL1608-FH MBC13900 MBC13900T1 marking r4 SOT343 SOT343 lna
Text: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ
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MBC13900/D
MBC13900
OT-343)
MBC13900T1
OT-343
MBC13900
SC-70
318M
LL1608-FH
MBC13900T1
marking r4 SOT343
SOT343 lna
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS 1 1 SOT-89 SOT-223 1 1 TO-92 * Low frequency power amplifier complementary pair with UTC 2SB649/A TO-92NL 1 1 TO-126 TO-126C 1 1 TO-251
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2SD669/A
OT-89
OT-223
2SB649/A
O-92NL
O-126
O-126C
O-251
O-252
2SD669L/2SD669AL
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2SD669A
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-223 SOT-89 APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-92 1 TO-92NL 1 TO-126C 1 TO-126 1 TO-251 1 TO-252
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2SD669/A
OT-223
OT-89
2SB649/A
O-92NL
O-126C
O-126
O-251
O-252
2SD669L/2SD669AL
2SD669A
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-89 SOT-223 APPLICATIONS * Low frequency power amplifier complementary pair with UTC 1 1 2SB649/A TO-251 TO-252 1 1 TO-92NL TO-92 1 TO-126
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2SD669/A
OT-89
OT-223
2SB649/A
O-251
O-252
O-92NL
O-126
O-126C
2SD669x-x-AA3-R
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16-2-472
Abstract: 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501
Text: THN5601SF SOT-23F NPN SiGe RF POWER TRANSISTOR □ DESCRIPTION The THN5601SF is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-23F SMD package. The THN5601SF can be used as a driver device or an output device, depending on the specific application.
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THN5601SF
OT-23F
THN5601SF
OT-23F
26dBm
900MHz
IS21I
16-2-472
161-717
45650
Transistor S 40442
SMD IC MARKING GP
marking am1 smd
25804
403 inductor coil smd
RF NPN POWER TRANSISTOR C 10-12 GHZ
hn6501
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CHT2907VGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT2907VGP SURFACE MOUNT PNP Switching Transistor VOLTAGE 60 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SOT-563 * Small surface mounting type. SOT-563
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CHT2907VGP
OT-563
OT-563)
600mA)
50ohmS
200ohmS
CHT2907VGP
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Untitled
Abstract: No abstract text available
Text: MBT3946DW1T1 Dual General Purpose Transistor The MBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in
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MBT3946DW1T1
23/SOT
MBT3946DW1T1
363/SC
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sot 363-6
Abstract: marking 46d SOT363-6
Text: MBT3946DW1T1 Dual General Purpose Transistor The MBT3946DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6 surface mount package. By putting two discrete devices in one
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MBT3946DW1T1
OT-23/SOT-323
OT-363-6
MBT3946DW1T1
MBT3946DW1TC
sot 363-6
marking 46d
SOT363-6
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC3437 TRANSISTOR NPN SOT–23 FEATURES High Transition Frequency Low Saturation Voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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OT-23
2SC3437
100mA
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Untitled
Abstract: No abstract text available
Text: NST3946DXV6T1G, NST3946DXV6T5G Complementary General Purpose Transistor The NST3946DXV6T1 device is a spin-off of our popular SOT−23/SOT−323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−563 six-leaded surface mount package. By putting two discrete devices in
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NST3946DXV6T1G,
NST3946DXV6T5G
NST3946DXV6T1
23/SOTâ
NST3946DXV6T1/D
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Untitled
Abstract: No abstract text available
Text: NST3946DXV6 Complementary General Purpose Transistor The NST3946DXV6T1 device is a spin-off of our popular SOT−23/SOT−323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−563 six-leaded surface mount package. By putting two discrete devices in
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NST3946DXV6
NST3946DXV6T1
23/SOTâ
NST3946DXV6T1/D
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SC4098 TRANSISTOR NPN FEATURES SOT–323 Low Collector Capacitance High Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit
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OT-323
2SC4098
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC2859 TRANSISTOR NPN SOT–23 FEATURES Excellent hFE Linearity Switching Applications 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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OT-23
2SC2859
100mA
400mA
100mA,
25Min
40Min
70Min
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BFQ234/I
Abstract: BFQ234 BFQ254
Text: Philips Semiconductors Product specification - T Z33-05 NPN 1 GHz video transistor PHILIPS INTERNATIONAL DESCRIPTION BFQ234; BFQ234/I D ShE ' PINNING NPN silicon epitaxial transistor in SOT 172A1 and SOT 172A3 envelopes, with emitter-ballasting resistors and
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OT172
OT172A3
BFQ234
OT172A1
BFQ234/I
---t-33-05
BFQ234;
BFQ234/I
7110fleb
BFQ254
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors ^ 5 3 ^ 3 1 0031714 b?fl • APX NPN 1 GHz video transistor Product specification BFQ234; BFQ234/I N Af1ER PHILIPS/DISCRETE DESCRIPTION b'lE T> PINNING NPN silicon epitaxial transistor in SOT 172A1 and SOT 172A3 envelopes, with emitter-ballasting resistors and
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BFQ234;
BFQ234/I
172A1
172A3
003171b
M38680
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